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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFZ34NSTRRPBF

Name: IRFZ34NSTRRPBF
Brand: Infineon Technologies
SKU: IRFZ34NSTRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFZ34NSTRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFZ34NSTRRPBF.pdf

Description:: MOSFET N-CH 55V 29A D2PAK

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Product details

Overview

IRFZ34NSTRRPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in TO-262 (D-Pak) package, rated for 55 V V_DS, 28 A continuous drain current at T_C = 25 °C, and 0.028 Ω R_DS(on) at V_GS = 10 V. It serves as a high-efficiency low-side switching device in DC-DC converters, motor drives, and power supplies.

For engineers reviewing the IRFZ34NSTRRPBF datasheet, IRFZ34NSTRRPBF pinout, IRFZ34NSTRRPBF application, or IRFZ34NSTRRPBF equivalent, key selection criteria include its 55 V breakdown voltage, 28 A thermal-limited current, 0.028 Ω on-resistance, unclamped inductive switching capability, and TO-262 surface-mount compatibility with standard PCB layout practices.

Technical Context

This MOSFET employs a planar silicon process optimized for low conduction loss and fast switching in hard-switched topologies. Its gate threshold voltage (V_GS(th)) is 2.0–4.0 V, and total gate charge (Q_G) is 35 nC at V_GS = 10 V, supporting efficient drive with standard logic-level gate drivers.

The device features an integrated body diode with reverse recovery time (t_rr) of 120 ns and Q_rr of 35 nC at I_F = 28 A, V_DD = 25 V, and T_J = 25 °C - enabling reliable operation in freewheeling and synchronous rectification roles without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - maximum blocking voltage before avalanche onset; defines safe operating range in 24–48 V bus applications
I_D (continuous, T_C = 25 °C)	28 A - steady-state current capacity with heatsink; supports >150 W load switching at low duty cycle
R_DS(on) @ V_GS = 10 V	0.028 Ω - conduction loss of ≤22 W at 28 A; enables <1% efficiency penalty in 12 V/20 A buck stages
Q_G	35 nC - gate drive energy requirement; compatible with TC4427 or UCC27531 drivers at ≤500 kHz switching
E_AS	53 mJ - single-pulse avalanche energy rating; allows robust operation under inductive turn-off transients up to 20 A × 55 V
t_r/t_f	35 ns / 55 ns - rise/fall times at I_D = 28 A, V_DD = 44 V; supports <200 kHz hard-switched PWM with minimal switching loss

Pinout & Package

IRFZ34NSTRRPBF uses the TO-262 (D-Pak) surface-mount package with exposed drain pad for thermal performance. The package measures 10.67 mm × 4.83 mm × 9.65 mm (0.420″ × 0.190″ × 0.380″) and is lead-free (RoHS-compliant).

Pin/Terminal	Circuit Role	Design Meaning
Tab / Pin 1 (Drain)	Main power output terminal	Electrically connected to copper tab; must be soldered to large PCB copper pour or heatsink for thermal management
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring <35 nC charge; sensitive to ESD; routed away from noisy power traces
Pin 3 (Source)	Reference node for gate drive and current sensing	Common return path for load current and gate driver ground; critical for stable switching and accurate current monitoring

Key Features

Feature	Design Value
Low R_DS(on) with 10 V gate drive	0.028 Ω enables <0.8 W conduction loss at 15 A, reducing heatsink requirements in compact power modules
Fast switching with low Q_G	35 nC total gate charge minimizes driver power consumption and propagation delay in high-frequency SMPS
Robust avalanche-rated structure	53 mJ E_AS supports reliable operation during inductive load interruption without snubber circuits
Optimized body diode	120 ns t_rr and soft recovery reduce EMI and voltage overshoot in flyback and half-bridge freewheeling paths

Applications

DC-DC Buck Converter

Brushed DC Motor Drive

Use Scenario: Step-down regulation from 48 V battery to 12 V for vehicle infotainment systems.

IC Role / Device Role / Timing Role: Low-side synchronous switch in fixed-frequency 200 kHz buck stage.

Use Value: 0.028 Ω R_DS(on) limits conduction loss to 6.3 W at 15 A, enabling natural convection cooling on 4-layer PCB.

Use Scenario: H-bridge control of 24 V, 10 A brushed motor in industrial actuator.

IC Role / Device Role / Timing Role: High-current quadrant switch with integrated body diode conducting reverse current during PWM off-time.

Use Value: 120 ns body diode t_rr prevents shoot-through risk and reduces voltage spikes during commutation.

AC-DC Secondary-Side Rectifier

UPS Inverter Half-Bridge

Use Scenario: Synchronous rectification in 36 V/10 A LLC resonant converter secondary.

IC Role / Device Role / Timing Role: Self-driven rectifier controlled by transformer secondary voltage polarity.

Use Value: Low V_GS(th) (2.0–4.0 V) ensures reliable turn-on with <6 V secondary swing; eliminates Schottky losses.

Use Scenario: 55 V half-bridge leg in 48 V input online UPS inverter feeding 230 V AC via transformer.

IC Role / Device Role / Timing Role: Low-side switch handling bidirectional current during sinusoidal PWM modulation.

Use Value: 53 mJ E_AS rating withstands inductive kickback during zero-crossing transitions without clamping.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP30NF20	200 V V_DS, 30 A I_D, 0.045 Ω R_DS(on) - higher voltage rating but higher on-resistance	Better suited for 100–150 V bus designs; less efficient at 48 V due to 60% higher conduction loss	Select when system requires >100 V transient tolerance and can accept higher thermal load
IRFZ44N	55 V V_DS, 49 A I_D, 0.028 Ω R_DS(on), 65 nC Q_G - same voltage, higher current, double gate charge	Enables higher peak current but demands stronger gate driver and increases switching loss at >100 kHz	Prefer for 50 A peak loads with adequate gate drive strength; avoid in space-constrained 500 kHz designs

Compared with STP30NF20 and IRFZ44N, IRFZ34NSTRRPBF offers optimal balance of 55 V rating, 28 A capability, and 35 nC gate charge - making it ideal for thermally constrained 200–300 kHz buck converters where driver simplicity and board area are prioritized over extreme current headroom.

Availability

IRFZ34NSTRRPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and uninterruptible power supplies requiring stable component supply and long-term industrial availability.

Supply support for IRFZ34NSTRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial MOSFETs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The StrongIRFET™ product line - to which IRFZ34NSTRRPBF belongs - is engineered for high-reliability power switching in industrial motor controls, solar inverters, and telecom power systems, emphasizing ruggedness, low R_DS(on), and repeatable avalanche performance.

FAQ

Is IRFZ34NSTRRPBF suitable for logic-level gate drive?

No - IRFZ34NSTRRPBF has a gate threshold voltage (V_GS(th)) of 2.0–4.0 V and is specified for R_DS(on) at V_GS = 10 V. While it may weakly conduct at 5 V, full enhancement requires ≥8 V. For true logic-level operation (3.3 V or 5 V), consider alternatives like IRLZ44N or SI2302.

What is the maximum junction temperature and thermal resistance?

The absolute maximum junction temperature is 175 °C. With the TO-262 package, the typical junction-to-case thermal resistance (R_θJC) is 1.2 °C/W. Achieving this requires full-surface soldering of the drain tab to ≥10 cm² of 2 oz copper with thermal vias to inner layers.

Does IRFZ34NSTRRPBF have avalanche capability, and is it tested?

Yes - IRFZ34NSTRRPBF is fully rated for unclamped inductive switching with E_AS = 53 mJ at T_J = 25 °C. This is a production-tested parameter per JEDEC JESD24-11, not a theoretical limit, and applies to single-pulse conditions only.

Can IRFZ34NSTRRPBF replace IRFZ44N in existing designs?

Only with derating: IRFZ34NSTRRPBF has lower continuous current (28 A vs. 49 A) and identical R_DS(on), but its SOA curve limits pulse current to 110 A (vs. 160 A for IRFZ44N). Verify thermal margin and peak current demand before substitution - especially in motor start-up or surge conditions.

IRFZ34NSTRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 29A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 40mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 34 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 68W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFZ34NSTRRPBF FAQ

1.How can I place an order for IRFZ34NSTRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFZ34NSTRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFZ34NSTRRPBF reliable?

The price and inventory of IRFZ34NSTRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ34NSTRRPBF is usually 5 days.

3.What payment methods are accepted for IRFZ34NSTRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ34NSTRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFZ34NSTRRPBF?

IRFZ34NSTRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFZ34NSTRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFZ34NSTRRPBF?

For technical support, including IRFZ34NSTRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ34NSTRRPBF requirements.

6.How does Aetrix verify that IRFZ34NSTRRPBF is sourced from the original manufacturer or authorized distributors?

All IRFZ34NSTRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ34NSTRRPBF meets industry standards.

7.What is the process for return or replacement of IRFZ34NSTRRPBF?

All IRFZ34NSTRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ34NSTRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFZ34NSTRRPBF part is unused and in its original packaging.

Return procedure for IRFZ34NSTRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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