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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFZ44EL

Name: IRFZ44EL
Brand: Infineon Technologies
SKU: IRFZ44EL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFZ44EL

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRFZ44EL.pdf

Description:: MOSFET N-CH 60V 48A TO262

Quantity:: RFQ Add To RFQ list

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Inventory:3,713

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Product details

Overview

IRFZ44EL from Infineon Technologies (formerly International Rectifier) is a 60 V, 48 A, low-profile through-hole N-channel HEXFET Power MOSFET with R_DS(on) = 0.023 Ω at V_GS = 10 V and fully rated for single-pulse avalanche energy (E_AS = 220 mJ). It features fast switching (t_r = 60 ns, t_f = 70 ns), rugged body diode (trr = 69–104 ns), and operates from –55 °C to +175 °C junction temperature - deployed in DC-DC converters, motor drive half-bridges, and UPS output stages.

For engineers reviewing the IRFZ44EL datasheet, IRFZ44EL pinout, IRFZ44EL application, or IRFZ44EL equivalent, key selection criteria include its 0.023 Ω on-resistance at 10 V gate drive, 192 A pulsed drain current capability, 1.4 °C/W junction-to-case thermal resistance, avalanche-rated robustness, and TO-262 (I²PAK) through-hole package compatibility with high-current PCB layouts.

Technical Context

This device uses fifth-generation HEXFET process technology to minimize conduction loss while maintaining fast turn-on/turn-off dynamics. Its gate charge profile (Q_g = 60 nC, Q_gd = 23 nC) supports efficient PWM control in hard-switched topologies up to several hundred kHz.

The integrated body diode exhibits controlled reverse recovery (Q_rr = 177–266 nC, trr = 69–104 ns) and is rated for repetitive avalanche (E_AR = 11 mJ), enabling reliable operation in inductive load switching without external snubbers in many designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage before avalanche; sets upper limit for bus voltage in buck, flyback, and half-bridge applications.
R_DS(on)	0.023 Ω @ V_GS = 10 V - Enables <1.1 W conduction loss at 48 A DC, critical for thermal management in high-current power stages.
I_D (T_C = 25°C)	48 A - Continuous drain current rating under ideal heatsink conditions; defines maximum steady-state load handling capacity.
E_AS	220 mJ - Single-pulse avalanche energy rating; allows safe clamping of inductive kickback without failure in motor or solenoid drivers.
Q_g	60 nC - Total gate charge determines required driver current and switching loss in PWM circuits operating above 50 kHz.
t_r/t_f	60/70 ns - Rise/fall times constrain minimum dead time and EMI generation in synchronous rectifiers and inverters.
R_θJC	1.4 °C/W - Junction-to-case thermal resistance enables accurate heatsink sizing when mounted with proper torque (1.1 N·m) on flat greased surface.

Pinout & Package

IRFZ44EL is housed in a TO-262 (I²PAK) through-hole package - low-profile variant of D²Pak optimized for vertical mounting and high-current PCB traces. The case serves as the Drain terminal, enabling direct thermal and electrical connection to heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal (high-side switch node)	Electrically and thermally connected to metal tab; must be isolated from chassis unless referenced to system ground.
Source	Return path for load current; reference for gate drive	Low-inductance connection essential for stable gate control; ties to power ground plane in half-bridge layouts.
Gate	Control input for channel conduction	High-impedance MOS gate requiring <60 nC charge; sensitive to ESD and ringing - needs local RC snubber if long trace.

Key Features

Feature	Design Value
Fully avalanche rated	220 mJ single-pulse and 11 mJ repetitive avalanche energy - eliminates need for external clamping in inductive switching.
Low R_DS(on)	0.023 Ω at 10 V gate drive - reduces I²R losses by >30% vs. prior-gen 60 V MOSFETs at 30 A, improving efficiency in 12–48 V systems.
Fast body diode	trr = 69 ns (typ), Q_rr = 177 nC - minimizes commutation loss and voltage overshoot during freewheeling in synchronous rectification.
TO-262 package	Low-profile through-hole footprint with exposed drain tab - supports manual assembly, high-current routing, and mechanical stability in industrial controls.
Lead-free construction	PbF-compliant per JEDEC J-STD-020 - meets RoHS requirements without compromising thermal or electrical performance.

Applications

Motor Drive Half-Bridge

DC-DC Synchronous Buck Converter

Use Scenario: Driving brushed DC motors in industrial actuators with bidirectional PWM control at 20–50 kHz.

IC Role / Device Role / Timing Role: High-side and low-side switching element in H-bridge; handles 48 A peak current with <100 ns switching transitions.

Use Value: Low R_DS(on) and fast body diode reduce conduction and recovery losses, enabling >95% efficiency at 24 V/30 A output.

Use Scenario: Primary switch in 48 V input → 12 V/60 A output automotive-grade buck converter.

IC Role / Device Role / Timing Role: Main power switch synchronized with external controller; operates at 300 kHz with 10 V gate drive.

Use Value: 60 nC Q_g and 1.4 °C/W R_θJC allow compact heatsinking and minimal gate driver power consumption.

Uninterruptible Power Supply (UPS) Output Stage

Inductive Load Switching (Solenoids/Valves)

Use Scenario: Inverter stage delivering clean 230 VAC sine-wave output from 350 VDC bus using full-bridge topology.

IC Role / Device Role / Timing Role: Low-side switch in full-bridge; conducts 48 A RMS with 175 °C max junction temperature rating.

Use Value: 220 mJ E_AS withstands transformer leakage inductance spikes during zero-crossing transitions without failure.

Use Scenario: High-reliability on/off control of 24 V solenoid valves in factory automation PLC outputs.

IC Role / Device Role / Timing Role: Unclamped inductive switch; absorbs L·di/dt energy via intrinsic avalanche capability.

Use Value: Eliminates need for external flyback diodes or TVS, reducing BOM count and board area in DIN-rail mounted I/O modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP48NF60	R_DS(on) = 0.022 Ω, V_DSS = 60 V, Q_g = 105 nC - higher gate charge increases driver demand.	Higher thermal resistance (R_θJC = 1.6 °C/W) limits power density in compact heatsink designs.	Preferable where lower on-resistance outweighs gate drive complexity and thermal margin constraints.
IXTH48N60L2	R_DS(on) = 0.024 Ω, V_DSS = 60 V, E_AS = 320 mJ - enhanced avalanche rating but TO-247 package increases height.	TO-247 footprint requires taller clearance; not drop-in compatible with TO-262 PCB layouts.	Selected when higher avalanche margin is mandatory and board height permits larger package.

Compared with STP48NF60 and IXTH48N60L2, IRFZ44EL offers optimal balance of low gate charge (60 nC), industry-standard TO-262 footprint, and proven avalanche ruggedness - making it preferred for space-constrained, high-reliability 48 A switching where driver simplicity and thermal interface efficiency are critical.

Availability

IRFZ44EL is available at Aetrix Electronics and suitable for motor drives, uninterruptible power supplies, and industrial DC-DC converters requiring stable component supply across multi-year production cycles.

Supply support for IRFZ44EL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices and wide-bandgap solutions.

The HEXFET® Power MOSFET product line was engineered for high-efficiency, high-reliability switching in industrial, automotive, and computing power systems - emphasizing low R_DS(on), fast switching, and rugged avalanche performance.

FAQ

What is the maximum continuous drain current for IRFZ44EL at 100°C case temperature?

The maximum continuous drain current is 34 A at T_C = 100°C and V_GS = 10 V, derated linearly from 48 A at 25°C using the 0.71 W/°C derating factor. This reflects real-world thermal limits when mounted on a heatsink with 0.50 °C/W case-to-sink resistance and ambient airflow constraints.

Can IRFZ44EL be used in avalanche mode repeatedly without degradation?

Yes - IRFZ44EL is fully specified for repetitive avalanche operation with E_AR = 11 mJ per pulse, provided pulse width ≤ 300 µs and duty cycle ≤ 2%. Designers must ensure junction temperature remains ≤ 175°C and di/dt ≤ 320 A/µs to maintain reliability over lifetime.

What is the recommended gate resistor value for driving IRFZ44EL in a 100 kHz half-bridge?

A 15 Ω gate resistor is validated in the datasheet for t_d(off) = 70 ns and t_f = 70 ns at V_DD = 30 V and I_D = 29 A. For 100 kHz operation, this value balances switching loss reduction against gate drive strength and EMI control - lower values increase peak gate current and ringing risk.

Does IRFZ44EL require a heatsink in a 48 A DC application?

Yes - with P_D = I² × R_DS(on) ≈ 53 W at 48 A, and R_θJC = 1.4 °C/W, even with ideal heatsinking (R_θCA < 1.0 °C/W), junction temperature exceeds 175°C without active cooling. A forced-air heatsink with ≤0.5 °C/W total thermal resistance is required for continuous 48 A operation.

IRFZ44EL Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 48A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 23mOhm @ 29A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1360 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRFZ44EL FAQ

1.How can I place an order for IRFZ44EL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFZ44EL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFZ44EL reliable?

The price and inventory of IRFZ44EL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ44EL is usually 5 days.

3.What payment methods are accepted for IRFZ44EL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ44EL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFZ44EL?

IRFZ44EL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFZ44EL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFZ44EL?

For technical support, including IRFZ44EL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ44EL requirements.

6.How does Aetrix verify that IRFZ44EL is sourced from the original manufacturer or authorized distributors?

All IRFZ44EL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ44EL meets industry standards.

7.What is the process for return or replacement of IRFZ44EL?

All IRFZ44EL units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ44EL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFZ44EL part is unused and in its original packaging.

Return procedure for IRFZ44EL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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