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Infineon Technologies IRFZ44EPBF
- Part No.:
- IRFZ44EPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IRFZ44EPBF.pdf
- Description:
- MOSFET N-CH 60V 48A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:3,393
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Product details
Overview
IRFZ44EPBF from Infineon Technologies (formerly International Rectifier) is a 60V, 48A N-channel enhancement-mode power MOSFET in TO-220AB package, featuring 23 mΩ RDS(on) at VGS = 10 V, 192 A pulsed drain current, and full avalanche rating. It serves as a main switching device in DC-DC converters, motor drives, and power inverters operating up to 175°C junction temperature.
For engineers reviewing the IRFZ44EPBF datasheet, IRFZ44EPBF pinout, IRFZ44EPBF application, or IRFZ44EPBF equivalent, key selection criteria include its 60 V V(BR)DSS, low 0.023 Ω on-resistance, fast 12 ns turn-on delay, 60 nC total gate charge, and TO-220AB thermal performance with 1.4 °C/W junction-to-case resistance.
Technical Context
This HEXFET® device uses fifth-generation silicon processing to achieve optimized conduction loss and switching trade-offs. Its fully avalanche-rated structure supports unclamped inductive switching with 220 mJ single-pulse energy and 29 A avalanche current under controlled di/dt conditions.
The integrated body diode exhibits 69–104 ns reverse recovery time and 177–266 nC Qrr at 29 A, enabling reliable synchronous rectification and freewheeling in hard-switched topologies. Gate drive requirements are defined by 13 nC Qgs, 23 nC Qgd, and 60 nC Qg at VDS = 48 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 60 V - Maximum blocking voltage before avalanche onset; sets upper limit for bus voltage in buck, flyback, and half-bridge designs. |
| RDS(on) | 0.023 Ω - On-state resistance at VGS = 10 V and ID = 29 A; determines conduction loss (Pcond ≈ I² × 0.023) in continuous operation. |
| ID (TC = 25°C) | 48 A - Continuous drain current rating at case temperature 25°C; defines maximum steady-state load capability with adequate heatsinking. |
| EAS | 220 mJ - Single-pulse avalanche energy; enables robustness against inductive kickback without external snubbers in relay drivers or solenoid controls. |
| Qg | 60 nC - Total gate charge at VDS = 48 V; directly impacts required gate driver peak current (Idrive = Qg × fsw) and switching loss. |
| RθJC | 1.4 °C/W - Junction-to-case thermal resistance; used with heatsink RθCS + RθSA to calculate max allowable power dissipation at target TJ. |
| tr/tf | 60/70 ns - Rise/fall times at ID = 29 A, VDD = 30 V, RG = 15 Ω; constrains minimum practical switching frequency and EMI generation. |
Pinout & Package
IRFZ44EPBF is housed in a TO-220AB package with isolated tab (drain-connected), standard lead spacing, and lead-free plating per JEDEC outline. The package provides mechanical mounting via M3 screw and supports direct heatsink attachment with thermal interface material.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 – Gate | Control electrode | Receives 10 V logic-level drive; requires <20 V absolute max rating and ≤100 nA leakage at ±20 V bias. |
| 2 – Drain | Main high-side current path | Internally connected to metal tab; electrically tied to heatsink; must be insulated if heatsink is grounded. |
| 3 – Source | Reference node / return path | Serves as common reference for gate drive and load return; carries full load current and body diode conduction. |
| 4 – Drain | Secondary drain connection | Redundant drain terminal for improved current sharing and reduced package inductance in high-di/dt applications. |
Key Features
| Feature | Design Value |
|---|---|
| Fully avalanche rated | Withstands 220 mJ single-pulse and 11 mJ repetitive avalanche energy without failure-eliminates need for external clamping in inductive load switching. |
| Low RDS(on) × Qg figure of merit | 0.023 Ω × 60 nC = 1.38 Ω·nC-balances conduction and switching losses for high-efficiency 20–100 kHz SMPS designs. |
| Fast body diode recovery | 69 ns typical trr and 177 nC Qrr at 29 A-reduces reverse recovery loss and cross-conduction risk in synchronous rectifiers. |
| High-temperature operation | Rated for continuous operation up to TJ = 175°C with normalized RDS(on) increase <2.5× from 25°C-supports compact thermal design in sealed enclosures. |
Applications
| DC-DC Converter Primary Switch | Brushed DC Motor H-Bridge Leg |
|---|---|
|
Use Scenario: High-current buck converter supplying 12 V @ 30 A from 48 V battery in telecom power shelf. IC Role / Device Role / Timing Role: Main high-side switching element operating at 100 kHz with synchronous rectification. Use Value: 0.023 Ω RDS(on) limits conduction loss to <2.1 W at full load, while 60 nC Qg enables efficient gate driving with low-power ICs like IR2110. |
Use Scenario: Bidirectional 24 V, 20 A motor control in automated gate actuator with regenerative braking. IC Role / Device Role / Timing Role: Low-side switch in H-bridge configuration handling forward and reverse current plus freewheeling via body diode. Use Value: 29 A avalanche current rating and 220 mJ EAS absorb inductive energy during rapid direction reversal without snubber circuits. |
| Uninterruptible Power Supply Inverter | Industrial Solenoid Driver |
|
Use Scenario: 600 W offline UPS using full-bridge topology converting 360 V DC bus to 230 V AC output. IC Role / Device Role / Timing Role: One of four primary switching devices in hard-switched full-bridge inverter stage. Use Value: TO-220AB package delivers 110 W power dissipation at 25°C case temperature, supporting >95% efficiency with forced-air cooling. |
Use Scenario: 24 V, 15 A solenoid valve controller in hydraulic system requiring fast turn-off and surge immunity. IC Role / Device Role / Timing Role: High-side switch controlling solenoid coil with active clamp during de-energization. Use Value: 5.0 V/ns peak diode recovery dv/dt rating ensures stable commutation across wide temperature range without oscillation or shoot-through. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP60NF06 | RDS(on) = 0.018 Ω (lower), Qg = 72 nC (higher), V(BR)DSS = 60 V, TO-220 package | Better conduction loss but higher gate drive demand; less suitable for high-frequency (>150 kHz) operation due to increased switching loss. | Select when minimizing I²R loss dominates over gate drive complexity and thermal management is prioritized. |
| IRFZ44N | Same die, non-lead-free variant; identical RDS(on), Qg, and avalanche ratings; RoHS-compliant marking differs. | No functional difference; not acceptable for lead-free assembly processes requiring Pb-free solder compatibility. | Choose IRFZ44EPBF exclusively for lead-free manufacturing; IRFZ44N remains viable only in legacy non-RoHS production. |
Compared with STP60NF06 and IRFZ44N, IRFZ44EPBF offers optimal balance of gate drive simplicity (60 nC), rugged avalanche capability (220 mJ), and RoHS compliance-making it preferred for industrial motor drives and power supplies where reliability and process compatibility are jointly critical.
Availability
IRFZ44EPBF is available at Aetrix Electronics and suitable for DC-DC converters, brushed motor controllers, and uninterruptible power supplies requiring stable component supply and long-term industrial lifecycle support.
Supply support for IRFZ44EPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control solutions with vertical integration from silicon fabrication to system-level validation.
IRFZ44EPBF belongs to the HEXFET® Power MOSFET product line, engineered for high-current, medium-voltage switching in industrial power conversion, motor control, and energy infrastructure applications demanding ruggedness and thermal resilience.
FAQ
What is the maximum safe operating frequency for IRFZ44EPBF in hard-switched applications?
IRFZ44EPBF supports hard-switched operation up to 150 kHz with proper gate drive (≥2 A peak) and layout optimization. At 100 kHz, measured tr/tf of 60/70 ns yields <1.5% switching loss contribution at 30 A load, assuming 15 V gate drive and 0.5 Ω series resistance. Higher frequencies increase switching loss disproportionately due to fixed Qg and parasitic capacitance effects.
Can IRFZ44EPBF be used in synchronous rectification configurations?
Yes-its body diode has 69 ns typical reverse recovery time and 177 nC Qrr at 29 A, enabling effective synchronous rectification in buck and LLC converters up to 200 kHz. However, external Schottky diodes remain preferable below 5 V output due to VSD = 1.3 V forward drop, which exceeds typical Schottky forward voltage.
Is heatsinking mandatory for continuous 48 A operation?
Yes-continuous 48 A operation requires case temperature ≤25°C, demanding RθJA ≤ 1.3 °C/W total thermal resistance. This necessitates a substantial heatsink (e.g., 150 cm² aluminum finned) with thermal interface material and forced airflow. At 34 A (TC = 100°C), passive heatsinking becomes feasible with RθJA ≤ 2.1 °C/W.
Does IRFZ44EPBF support logic-level gate drive?
No-IRFZ44EPBF is not a logic-level MOSFET. Its VGS(th) ranges from 2.0 V to 4.0 V, but RDS(on) is specified only at VGS = 10 V. At 5 V gate drive, RDS(on) increases >3×, causing excessive conduction loss. A dedicated gate driver (e.g., TC4427) delivering 10–15 V is required for full performance.
IRFZ44EPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 23mOhm @ 29A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 60 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1360 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 110W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRFZ44EPBF FAQ
1.How can I place an order for IRFZ44EPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFZ44EPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFZ44EPBF reliable?
The price and inventory of IRFZ44EPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ44EPBF is usually 5 days.
3.What payment methods are accepted for IRFZ44EPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ44EPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFZ44EPBF?
IRFZ44EPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFZ44EPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFZ44EPBF?
For technical support, including IRFZ44EPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ44EPBF requirements.
6.How does Aetrix verify that IRFZ44EPBF is sourced from the original manufacturer or authorized distributors?
All IRFZ44EPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ44EPBF meets industry standards.
7.What is the process for return or replacement of IRFZ44EPBF?
All IRFZ44EPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ44EPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFZ44EPBF part is unused and in its original packaging.
Return procedure for IRFZ44EPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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