Infineon Technologies IRFZ44ES

Overview

IRFZ44ES from Infineon (formerly International Rectifier) is a 60V, 48A N-channel enhancement-mode surface-mount power MOSFET in D²PAK package, featuring R_DS(on) = 0.023Ω at V_GS = 10V, fully avalanche-rated (E_AS = 220 mJ), and optimized for high-current DC-DC converters, motor drives, and UPS systems.

For engineers reviewing the IRFZ44ES datasheet, IRFZ44ES pinout, IRFZ44ES application, or IRFZ44ES equivalent, key selection criteria include its 60V V_BR(DSS), 0.023Ω on-resistance, 192A pulsed drain current, thermal resistance R_θJC = 1.4°C/W, and fast switching performance with t_r = 60 ns and Q_g = 60 nC.

Technical Context

This HEXFET device uses advanced silicon processing to achieve low conduction loss and high ruggedness. Its gate threshold voltage (2.0–4.0V) enables direct drive from 3.3V/5V logic, while the integrated body diode supports synchronous rectification and freewheeling in buck and half-bridge topologies.

The D²PAK package provides low junction-to-case thermal resistance (1.4°C/W) and high power density, supporting continuous operation up to T_J = 175°C. Avalanche energy rating (220 mJ single-pulse) ensures robustness against inductive switching transients without external snubbers.

Key Specifications

Pinout & Package

D²PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection. Standard 3-pin configuration: Pin 1 = Gate (G), Pin 2 = Drain (D), Pin 3 = Source (S). The large copper drain tab must be soldered to a thermal pad for optimal heat transfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60V power MOSFET applications.

Compared with STP60NF06 and IXTP50N065, IRFZ44ES offers superior thermal performance (R_θJC = 1.4°C/W vs. >2.5°C/W), surface-mount compatibility, and highest single-pulse avalanche energy-making it optimal for space-constrained, high-reliability power stages.

Availability

IRFZ44ES is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, uninterruptible power supplies, and LED lighting drivers requiring stable component supply and long-term industrial availability.

Supply support for IRFZ44ES includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices and system-level solutions.

The HEXFET® product line was developed for high-efficiency, high-reliability power conversion-targeting industrial motor controls, renewable energy inverters, and enterprise power infrastructure where ruggedness and thermal performance are critical.

FAQ

What is the maximum continuous drain current for IRFZ44ES at 100°C case temperature?

The maximum continuous drain current is 34 A at T_C = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D²PAK package and requires adequate heatsinking to maintain junction temperature below 175°C.

Does IRFZ44ES require a gate resistor for safe operation?

Yes-a gate resistor (typically 10–47 Ω) is required to dampen ringing, limit peak gate current, and control switching speed. Without it, parasitic inductance can cause oscillation, shoot-through risk in bridge configurations, and excessive EMI due to the 60 nC gate charge and fast 60 ns rise time.

Can IRFZ44ES replace IRFZ44N in existing designs?

Yes, IRFZ44ES is a drop-in replacement for IRFZ44N in surface-mount layouts, sharing identical pinout, voltage/current ratings, and thermal characteristics. However, the ES variant uses newer process technology with slightly lower R_DS(on) (0.023Ω vs. 0.028Ω) and improved avalanche ruggedness.

What is the recommended PCB layout for thermal management of IRFZ44ES?

A minimum 25 mm² copper thermal pad (2 oz Cu) connected to internal ground planes via ≥6 thermal vias (0.3 mm diameter) is recommended. The drain tab must be fully soldered to this pad; solder mask should be removed from the entire pad area to maximize thermal transfer and mechanical adhesion.