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Infineon Technologies IRFZ44ESPBF
- Part No.:
- IRFZ44ESPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRFZ44ESPBF.pdf
- Description:
- MOSFET N-CH 60V 48A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:5,606
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Product details
Overview
IRFZ44ESPBF from Infineon Technologies (formerly International Rectifier) is a 60V, 48A N-channel enhancement-mode surface-mount power MOSFET in D²PAK package, featuring 23 mΩ RDS(on) at VGS = 10 V, 192 A pulsed drain current, and full avalanche rating. It serves as a main switching element in DC-DC converters, motor drives, and UPS inverters where high-current, fast-switching, and ruggedness are required.
For engineers reviewing the IRFZ44ESPBF datasheet, IRFZ44ESPBF pinout, IRFZ44ESPBF application, or IRFZ44ESPBF equivalent, key selection criteria include its 60 V VBR(DSS), 23 mΩ on-resistance at 29 A/10 V, 60 nC total gate charge, 175 °C max junction temperature, and D²PAK thermal performance with 1.4 °C/W RθJC.
Technical Context
This HEXFET device uses fifth-generation silicon process to achieve low conduction loss and fast switching (tr = 60 ns, tf = 70 ns) while maintaining robust unclamped inductive switching capability. Its body diode exhibits 1.3 V forward drop at 29 A and 69–104 ns reverse recovery time under defined test conditions.
The MOSFET operates with gate threshold voltage between 2.0 V and 4.0 V, delivers 15 S forward transconductance at 30 V VDS, and supports ±20 V gate drive. Its 1360 pF input capacitance and 160 pF reverse transfer capacitance enable predictable gate drive design for hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR(DSS) | 60 V - Maximum blocking voltage before avalanche onset; defines upper limit of DC bus or flyback voltage stress |
| RDS(on) | 0.023 Ω - On-state resistance at VGS = 10 V and ID = 29 A; determines conduction loss in continuous operation |
| ID (TC = 25°C) | 48 A - Continuous drain current rating with case temperature maintained at 25°C using heatsink |
| Qg | 60 nC - Total gate charge required to fully switch device; sets minimum gate driver current and energy demand |
| EAS | 220 mJ - Single-pulse avalanche energy rating; enables reliable operation under inductive turn-off fault conditions |
| RθJC | 1.4 °C/W - Junction-to-case thermal resistance; used to calculate die temperature rise above heatsink temperature |
| tr/tf | 60/70 ns - Rise/fall times at VDD = 30 V, ID = 29 A, RG = 15 Ω; defines switching transition duration and associated losses |
Pinout & Package
IRFZ44ESPBF is housed in a surface-mount D²PAK (TO-263) package with exposed drain pad for enhanced thermal conduction. The package measures 10.67 × 9.65 × 4.83 mm and is lead-free (PbF) compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Tab / Pin 2 (Drain) | Main current path output terminal | Electrically connected to internal die drain; soldered to PCB copper pour for thermal and current handling |
| Pin 1 (Source) | Reference node for gate drive and load return | Provides low-inductance source connection; forms common reference for gate control and current sensing |
| Pin 3 (Gate) | Control electrode for channel modulation | High-impedance input requiring <60 nC charge; sensitive to ESD and ringing; requires proper gate resistor sizing |
Key Features
| Feature | Design Value |
|---|---|
| Fully avalanche rated | 220 mJ single-pulse and 11 mJ repetitive avalanche energy ensure survivability during inductive switching faults |
| Low RDS(on) | 23 mΩ at 10 V gate drive reduces conduction loss in high-current 12–48 V systems like BLDC motor controllers |
| Fast switching | 60 ns rise and 70 ns fall times minimize transition losses in PWM frequencies up to 100 kHz |
| D²PAK thermal performance | 1.4 °C/W RθJC enables >100 W dissipation with moderate heatsinking-critical for compact power stages |
| Lead-free construction | RoHS-compliant PbF finish meets IPC/JEDEC J-STD-020 reflow profile requirements for surface-mount assembly |
Applications
| DC-DC Buck Converter | Brushless DC Motor Drive |
|---|---|
Use Scenario: High-efficiency 24 V input to 5–12 V output conversion in industrial PLC power supplies. IC Role / Device Role / Timing Role: Primary synchronous rectifier switch operating at 100–200 kHz PWM frequency. Use Value: 23 mΩ RDS(on) minimizes I²R loss at 30–40 A load current, improving efficiency by ≥1.2% over 40 mΩ alternatives. | Use Scenario: Low-voltage (<60 V) three-phase inverter stage for 500 W–2 kW fan or pump motors. IC Role / Device Role / Timing Role: High-side and low-side switching element in six-step commutation with 10–50 kHz PWM. Use Value: 192 A pulsed rating supports peak torque currents; 175 °C TJ(max) allows operation in sealed enclosures without forced cooling. |
| Uninterruptible Power Supply (UPS) | LED Constant-Current Driver |
Use Scenario: Bidirectional 48 V battery interface in line-interactive UPS with boost/buck topology. IC Role / Device Role / Timing Role: Main power switch in high-current DC link stage handling surge loads up to 150 A. Use Value: Fully rated avalanche capability absorbs inductive kickback during grid switchover, eliminating need for external snubbers. | Use Scenario: High-power LED string driver for architectural lighting with 3–5 A constant current output. IC Role / Device Role / Timing Role: Linear or PWM-controlled pass element regulating current through series-connected LEDs. Use Value: Low VSD (1.3 V) body diode enables efficient synchronous rectification in buck-derived topologies. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP60NF06 | 60 V VBR(DSS), 0.018 Ω RDS(on), TO-220 package, higher Qg (85 nC) | Through-hole mounting only; less suitable for automated SMT lines or space-constrained boards | Prefer when board-level thermal mass replaces heatsink or when legacy TO-220 footprint is fixed |
| IXTP50N065 | 65 V VBR(DSS), 0.015 Ω RDS(on), TO-220 package, lower RθJA but no D²PAK thermal advantage | Lacks D²PAK's 1.4 °C/W RθJC; requires larger heatsink for same power dissipation | Select when higher voltage margin or lower on-resistance justifies trade-off in thermal path and assembly method |
Compared with STP60NF06 and IXTP50N065, IRFZ44ESPBF offers superior surface-mount thermal performance and optimized gate charge for medium-frequency switching, while maintaining compatibility with standard D²PAK footprints and reflow profiles-making it preferred for high-volume, thermally constrained SMT designs.
Availability
IRFZ44ESPBF is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor drives, uninterruptible power supplies, and LED drivers requiring stable component supply across industrial production cycles.
Supply support for IRFZ44ESPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired International Rectifier in 2015 and continues its legacy of high-performance power semiconductors with advanced silicon process and packaging innovation.
The HEXFET® product line was developed specifically for high-efficiency, high-reliability power switching in industrial, automotive, and computing applications-emphasizing low RDS(on), fast switching, and rugged fault tolerance.
FAQ
What is the maximum safe gate-source voltage for IRFZ44ESPBF?
The absolute maximum VGS rating is ±20 V. Operation beyond this risks permanent gate oxide damage. Recommended gate drive is 10–15 V for full enhancement with margin; gate resistors must suppress ringing to avoid transient overshoot exceeding ±20 V during switching transitions.
Can IRFZ44ESPBF be used in linear (analog) mode for current regulation?
Yes-it supports linear operation with continuous power dissipation up to 110 W at TC = 25°C, provided thermal design maintains TJ ≤ 175°C. Derating is required above 25°C case temperature at 0.71 W/°C; SOA curves in the datasheet must be strictly observed for voltage/current combinations.
Does IRFZ44ESPBF have a built-in body diode, and what are its characteristics?
Yes-it integrates a monolithic p-n junction body diode with 1.3 V forward voltage at 29 A and 25°C, 69–104 ns reverse recovery time, and 177–266 nC reverse recovery charge. This diode enables freewheeling in inductive loads but is not optimized for high-frequency synchronous rectification.
Is IRFZ44ESPBF pin-compatible with IRFZ44N or IRFZ44VL?
No-IRFZ44ESPBF uses D²PAK (TO-263), while IRFZ44N is TO-220 and IRFZ44VL is TO-252 (DPAK). Though electrically similar, their footprints, thermal paths, and mounting methods differ. Direct replacement requires PCB layout revision and thermal validation for each package type.
IRFZ44ESPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 23mOhm @ 29A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 60 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1360 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 110W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRFZ44ESPBF FAQ
1.How can I place an order for IRFZ44ESPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFZ44ESPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFZ44ESPBF reliable?
The price and inventory of IRFZ44ESPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ44ESPBF is usually 5 days.
3.What payment methods are accepted for IRFZ44ESPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ44ESPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFZ44ESPBF?
IRFZ44ESPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFZ44ESPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFZ44ESPBF?
For technical support, including IRFZ44ESPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ44ESPBF requirements.
6.How does Aetrix verify that IRFZ44ESPBF is sourced from the original manufacturer or authorized distributors?
All IRFZ44ESPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ44ESPBF meets industry standards.
7.What is the process for return or replacement of IRFZ44ESPBF?
All IRFZ44ESPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ44ESPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFZ44ESPBF part is unused and in its original packaging.
Return procedure for IRFZ44ESPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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