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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFZ44ESTRL

Name: IRFZ44ESTRL
Brand: Infineon Technologies
SKU: IRFZ44ESTRL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFZ44ESTRL

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFZ44ESTRL.pdf

Description:: MOSFET N-CH 60V 48A D2PAK

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Product details

Overview

IRFZ44ESTRL from Infineon Technologies (formerly International Rectifier) is a 60V, 48A N-channel enhancement-mode HEXFET® Power MOSFET in D²PAK surface-mount package, featuring R_DS(on) = 0.023Ω at V_GS = 10V and fully rated for single-pulse avalanche energy (E_AS = 220 mJ). It serves as a high-efficiency main switch in DC-DC converters, motor drives, and power inverters operating up to 175°C junction temperature.

For engineers reviewing the IRFZ44ESTRL datasheet, IRFZ44ESTRL pinout, IRFZ44ESTRL application, or IRFZ44ESTRL equivalent, key selection criteria include its 60V V_BR(DSS), 0.023Ω on-resistance, 60nC total gate charge, fast 60ns rise time, and D²PAK thermal performance with R_θJC = 1.4°C/W - critical for high-current, thermally constrained board designs.

Technical Context

This MOSFET uses fifth-generation HEXFET process technology to achieve low conduction loss and robust avalanche capability without derating. Its body diode exhibits t_rr = 69–104 ns and Q_rr = 177–266 nC under 29A IF and 100A/µs di/dt, enabling efficient synchronous rectification and hard-switched topologies.

The device operates with V_GS(th) = 2.0–4.0V and g_fs = 15 S, supporting TTL- and CMOS-level gate drive. Its gate charge profile (Q_gd/Q_gs = 23/13 nC) indicates moderate Miller effect, suitable for 100–500 kHz switching with optimized gate resistor selection.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BR(DSS)	60 V - Maximum blocking voltage before avalanche onset; defines upper limit for bus voltage in buck, flyback, and half-bridge stages.
R_DS(on)	0.023 Ω @ V_GS = 10V, I_D = 29A - Directly determines I²R conduction loss; enables <1.5W loss at 40A continuous drain current.
I_D (T_C = 25°C)	48 A - Continuous safe operating current with heatsink; sets minimum PCB copper area and thermal pad design requirements.
E_AS	220 mJ - Single-pulse avalanche energy rating; allows reliable operation during inductive turn-off transients without snubber circuits.
Q_g	60 nC - Total gate charge; determines gate driver power requirement and switching loss at given frequency and V_GS.
t_r/t_f	60/70 ns - Rise/fall times at V_DD = 30V, I_D = 29A, R_G = 15Ω; constrains maximum practical switching frequency and EMI filter sizing.
R_θJC	1.4 °C/W - Junction-to-case thermal resistance; enables direct thermal interface to heatsink with predictable ΔT under 110W P_D.

Pinout & Package

D²PAK (TO-263) surface-mount package: 3-pin, single-die layout with exposed drain pad for thermal and electrical connection. Requires solder stencil aperture matching IPC-7351B footprint for optimal thermal transfer and mechanical reliability.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; accepts 0–10V logic-level drive; 100nA leakage at ±20V ensures low standby power.
Pin 2 (D)	Drain	Main power output node; electrically and thermally connected to large exposed copper pad; carries full load current and dissipates heat directly to heatsink.
Pin 3 (S)	Source	Power return/reference node; internal connection to source metallization; used for current sensing and gate drive reference in high-side configurations.

Key Features

Feature	Design Value
Fully avalanche-rated	220 mJ single-pulse energy tolerance eliminates need for external clamping in inductive load switching.
Low R_DS(on)	0.023Ω minimizes conduction loss in high-current paths, improving efficiency in 12–48V systems by ≥2% vs. legacy 0.035Ω devices.
Fast switching	60ns rise time supports >300 kHz PWM operation while maintaining <10% duty-cycle dead-time overhead.
Lead-free construction	RoHS-compliant Pb-free plating and die attach meet IPC-J-STD-020 moisture sensitivity level 3 (MSL3) requirements.
High-temperature operation	Rated for T_J = –55°C to +175°C; enables deployment in engine control units, industrial motor drives, and solar microinverters.

Applications

Motor Drive Inverter Stage

DC-DC Synchronous Buck Converter

Use Scenario: 24V/48V brushed DC motor H-bridge with peak current up to 45A.

IC Role / Device Role / Timing Role: Main low-side switching element handling continuous 35A load current and 192A pulsed surge.

Use Value: 0.023Ω R_DS(on) limits conduction loss to ≤2.8W at 35A, reducing heatsink size by 40% versus 0.035Ω alternatives.

Use Scenario: 48V input to 12V/20A isolated or non-isolated buck regulator for telecom power supply.

IC Role / Device Role / Timing Role: High-current synchronous rectifier replacing Schottky diode to reduce forward drop and improve light-load efficiency.

Use Value: Body diode V_SD = 1.3V at 29A enables <0.5V effective forward drop when actively driven, cutting diode conduction loss by >70%.

Solar Microinverter Half-Bridge

UPS Inverter Output Stage

Use Scenario: 600W single-phase microinverter using two-phase interleaved topology with 60V DC link.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge leg, switching at 20–50 kHz with 100% duty-cycle capability during grid synchronization.

Use Value: 220 mJ E_AS withstands transformer leakage inductance spikes during zero-crossing commutation without failure.

Use Scenario: Online UPS output stage delivering 1kVA sinusoidal AC from 48V battery bank.

IC Role / Device Role / Timing Role: Final-stage power switch in full-bridge configuration driving transformer-coupled output filter.

Use Value: R_θJC = 1.4°C/W allows 110W dissipation with <160°C junction rise over 25°C case, ensuring 10-year reliability at 40°C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60NF06	R_DS(on) = 0.018Ω, V_BR(DSS) = 60V, Q_g = 85nC, TO-220 package	Higher gate charge increases driver loss; through-hole mounting limits board density and thermal interface options.	Prefer when cost-sensitive, lower-frequency (<100 kHz), or manual assembly required.
IRF1404ZPBF	R_DS(on) = 0.020Ω, V_BR(DSS) = 40V, E_AS = 170 mJ, TO-220 package	Lower breakdown voltage restricts use to ≤32V systems; reduced avalanche margin impacts reliability in motor fault conditions.	Choose only for 24V systems where sub-40V bus operation is guaranteed and avalanche stress is minimal.

Compared with STP60NF06 and IRF1404ZPBF, IRFZ44ESTRL offers superior thermal performance via D²PAK package and balanced trade-off between R_DS(on), Q_g, and avalanche ruggedness - making it optimal for compact, high-reliability 48V industrial power stages.

Availability

IRFZ44ESTRL is available at Aetrix Electronics and suitable for motor drives, solar microinverters, and UPS systems requiring stable component supply across extended production lifecycles.

Supply support for IRFZ44ESTRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices.

The HEXFET® Power MOSFET product line delivers high-current, high-voltage switching solutions optimized for efficiency, ruggedness, and thermal performance in industrial motor control, renewable energy, and server power applications.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFZ44ESTRL supports 34A continuous drain current at T_C = 100°C with V_GS = 10V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D²PAK package and requires adequate heatsinking to maintain junction temperature below 175°C under sustained load.

Does this MOSFET require a gate driver IC for 200 kHz switching?

Yes - due to its 60nC total gate charge, driving the IRFZ44ESTRL at 200 kHz demands ≥12 mA average gate current to achieve clean 60ns rise/fall times. A dedicated gate driver (e.g., IR2110 or TC4427) is recommended to avoid shoot-through and ensure stable V_GS control under high di/dt conditions.

Can the body diode be used for synchronous rectification in a buck converter?

Yes - the body diode has V_SD = 1.3V at 29A and t_rr = 69–104 ns, enabling effective synchronous rectification when actively driven. However, external gate control must precisely time the low-side MOSFET turn-on to overlap with body diode conduction and minimize reverse recovery loss.

Is the IRFZ44ESTRL RoHS-compliant and halogen-free?

Yes - the "PbF" suffix confirms lead-free termination and RoHS compliance per EU Directive 2011/65/EU. The device meets JEDEC J-STD-020 MSL3 moisture sensitivity requirements and contains no brominated flame retardants or chlorine-based compounds in packaging materials.

IRFZ44ESTRL Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 48A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 23mOhm @ 29A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1360 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFZ44ESTRL FAQ

1.How can I place an order for IRFZ44ESTRL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFZ44ESTRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFZ44ESTRL reliable?

The price and inventory of IRFZ44ESTRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ44ESTRL is usually 5 days.

3.What payment methods are accepted for IRFZ44ESTRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ44ESTRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFZ44ESTRL?

IRFZ44ESTRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFZ44ESTRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFZ44ESTRL?

For technical support, including IRFZ44ESTRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ44ESTRL requirements.

6.How does Aetrix verify that IRFZ44ESTRL is sourced from the original manufacturer or authorized distributors?

All IRFZ44ESTRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ44ESTRL meets industry standards.

7.What is the process for return or replacement of IRFZ44ESTRL?

All IRFZ44ESTRL units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ44ESTRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFZ44ESTRL part is unused and in its original packaging.

Return procedure for IRFZ44ESTRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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