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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFZ44ESTRR

Name: IRFZ44ESTRR
Brand: Infineon Technologies
SKU: IRFZ44ESTRR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFZ44ESTRR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFZ44ESTRR.pdf

Description:: MOSFET N-CH 60V 48A D2PAK

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Product details

Overview

IRFZ44ESTRR from Infineon Technologies (formerly International Rectifier) is a 60V, 48A N-channel enhancement-mode power MOSFET in D²PAK (TO-263) surface-mount package, featuring 23mΩ R_DS(on) at V_GS = 10V, fully avalanche-rated, and optimized for high-current DC-DC conversion and motor drive switching. It delivers 110W power dissipation at T_C = 25°C with 1.4°C/W junction-to-case thermal resistance.

For engineers reviewing the IRFZ44ESTRR datasheet, IRFZ44ESTRR pinout, IRFZ44ESTRR application, or IRFZ44ESTRR equivalent, key selection criteria include its 60V V_BR(DSS), 23mΩ on-resistance, 60nC total gate charge, fast 60ns rise time, and rugged 220mJ single-pulse avalanche energy - all critical for hard-switched industrial power stages.

Technical Context

This HEXFET device uses advanced silicon processing to minimize conduction loss while maintaining robust switching behavior. Its low 23mΩ R_DS(on) enables high-efficiency operation at 48A continuous drain current (T_C = 25°C), and its 192A pulsed drain rating supports short-duration overload conditions without failure.

The MOSFET integrates a fast-recovery body diode with 69ns typical reverse recovery time and 177nC reverse recovery charge, enabling reliable synchronous rectification and freewheeling in buck converters and H-bridge motor drivers. Its 0.063V/°C breakdown voltage temperature coefficient ensures stable overvoltage margin across –55°C to +175°C junction range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BR(DSS)	60V - Maximum blocking voltage before avalanche onset; sets upper limit for DC bus or flyback voltage in switch-mode topologies.
R_DS(on)	0.023Ω @ V_GS = 10V - Directly determines I²R conduction loss at full load; enables <1.5W loss at 48A.
I_D (continuous)	48A @ T_C = 25°C - Sustained current capability when mounted on heatsink; derates to 34A at 100°C case temperature.
E_AS	220mJ - Energy the device safely absorbs during single inductive turn-off events; critical for snubberless flyback or relay driving.
Q_g	60nC - Total gate charge required to fully switch; defines driver strength requirement and switching loss trade-off.
t_r/t_f	60ns/70ns - Rise/fall times under standard test conditions; enables >100kHz PWM operation with controlled EMI.
C_iss	1360pF - Input capacitance at V_DS = 0V; impacts gate drive loop stability and Miller effect during high-dV/dt transitions.

Pinout & Package

D²PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection. Three terminals: Drain (tab and pins 2–3), Source (pin 1), Gate (pin 4).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab + Pins 2 & 3)	Main current path output terminal	Electrically and thermally connected to PCB copper pour; carries full load current and dissipates heat directly to heatsink.
Source (Pin 1)	Reference node for gate drive and current sensing	Serves as return path for load current and reference for gate-source voltage; must be low-inductance layout to avoid shoot-through.
Gate (Pin 4)	Control input for channel conduction	High-impedance MOS control node requiring clean, low-impedance drive; sensitive to ringing due to Q_gd = 23nC Miller charge.

Key Features

Feature	Design Value
Fully avalanche-rated	220mJ single-pulse and 11mJ repetitive avalanche energy - eliminates need for external clamping in inductive load switching.
Low R_DS(on)	23mΩ at 10V gate drive - reduces conduction loss by >35% vs. legacy 60V MOSFETs, improving thermal headroom in compact designs.
Fast body diode	69ns t_rr, 177nC Q_rr - minimizes reverse recovery loss and voltage overshoot during commutation in half-bridge configurations.
Lead-free construction	RoHS-compliant Pb-free plating and packaging - meets global environmental compliance requirements without derating.
Thermal performance	1.4°C/W R_θJC - enables direct mounting to heatsink with minimal thermal interface resistance for high-power density layouts.

Applications

DC-DC Converter Primary Switch

Brushed DC Motor High-Side Driver

Use Scenario: 48V input, 12V/20A output synchronous buck converter in telecom power supply.

IC Role / Device Role / Timing Role: Main high-side switching element handling full input current with 100kHz PWM.

Use Value: 23mΩ R_DS(on) limits conduction loss to ~2.2W at 20A, enabling natural convection cooling without forced airflow.

Use Scenario: 24V, 15A brushed motor control in automated gate actuator with H-bridge topology.

IC Role / Device Role / Timing Role: High-side switch controlling motor direction and braking via PWM duty cycle.

Use Value: 220mJ E_AS withstands inductive kickback during rapid stop commands, eliminating external TVS diodes.

AC-DC PFC Switch

Industrial Solenoid Driver

Use Scenario: Boost-type active PFC stage in 500W server PSU operating at 65kHz.

IC Role / Device Role / Timing Role: Fast-switching boost switch managing line-frequency current shaping.

Use Value: 60nC Q_g and 60ns t_r support efficient zero-voltage transition design with minimal gate drive loss.

Use Scenario: 48V solenoid actuation in factory automation valve controller with 100ms on-time pulses.

IC Role / Device Role / Timing Role: Low-loss, high-reliability switching element replacing mechanical relay.

Use Value: 192A I_DM handles 10× rated solenoid inrush current without degradation or thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60NF06	R_DS(on) = 0.018Ω (lower), Q_g = 72nC (higher), TO-220 package	Requires through-hole mounting and larger board area; better conduction but slower switching	Prefer when board space allows and conduction loss dominates over switching loss.
IRLZ44N	R_DS(on) = 0.028Ω (higher), logic-level gate (V_GS(th) = 1–2V), same D²PAK	Compatible with 3.3V/5V microcontroller drive; lower avalanche rating (E_AS = 120mJ)	Choose when gate drive voltage is limited and avalanche stress is low.

Compared with STP60NF06 and IRLZ44N, IRFZ44ESTRR offers optimal balance of low R_DS(on), moderate Q_g, surface-mount compatibility, and industry-leading avalanche ruggedness - making it preferred for space-constrained, high-reliability industrial switching where both efficiency and fault tolerance matter.

Availability

IRFZ44ESTRR is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, PFC circuits, and solenoid controllers requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFZ44ESTRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The HEXFET® Power MOSFET product line was developed for high-efficiency, high-reliability power conversion in industrial motor drives, UPS systems, and renewable energy inverters - emphasizing ruggedness, thermal performance, and consistent parametric stability.

FAQ

What is the maximum safe operating junction temperature for IRFZ44ESTRR?

The absolute maximum junction temperature is +175°C, and the device is characterized for continuous operation across –55°C to +175°C. Derating begins above 25°C case temperature at 0.71W/°C, and thermal design must maintain T_J ≤ 175°C under worst-case load and ambient conditions using R_θJC = 1.4°C/W.

Does IRFZ44ESTRR require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to control dV/dt and suppress oscillation. For 10–15V gate drive and typical 1–2A peak driver capability, a 10–22Ω series resistor is recommended. Lower values improve switching speed but increase EMI risk; higher values reduce ringing but raise switching losses due to extended transition times.

Can IRFZ44ESTRR be used in parallel with identical units?

Yes - the positive temperature coefficient of R_DS(on) (0.063V/°C) provides inherent current sharing stability. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and shared source inductance minimization. Thermal coupling between devices should also be balanced to prevent thermal runaway.

Is IRFZ44ESTRR suitable for linear (analog) operation, such as in adjustable current sources?

No - it is optimized for switching operation only. Linear mode subjects the device to high simultaneous V_DS and I_D, causing localized hot-spot formation and potential thermal runaway. Its Safe Operating Area (SOA) is not characterized for DC linear use, and SOA curves in the datasheet apply only to pulsed conditions up to 10ms.

IRFZ44ESTRR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 48A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 23mOhm @ 29A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1360 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFZ44ESTRR FAQ

1.How can I place an order for IRFZ44ESTRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFZ44ESTRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFZ44ESTRR reliable?

The price and inventory of IRFZ44ESTRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ44ESTRR is usually 5 days.

3.What payment methods are accepted for IRFZ44ESTRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ44ESTRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFZ44ESTRR?

IRFZ44ESTRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFZ44ESTRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFZ44ESTRR?

For technical support, including IRFZ44ESTRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ44ESTRR requirements.

6.How does Aetrix verify that IRFZ44ESTRR is sourced from the original manufacturer or authorized distributors?

All IRFZ44ESTRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ44ESTRR meets industry standards.

7.What is the process for return or replacement of IRFZ44ESTRR?

All IRFZ44ESTRR units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ44ESTRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFZ44ESTRR part is unused and in its original packaging.

Return procedure for IRFZ44ESTRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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