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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFZ44NLPBF

Name: IRFZ44NLPBF
Brand: Infineon Technologies
SKU: IRFZ44NLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFZ44NLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRFZ44NLPBF.pdf

Description:: MOSFET N-CH 55V 49A TO262

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFZ44NLPBF from Infineon Technologies is a 55 V, 49 A N-channel enhancement-mode MOSFET in TO-262 (D-Pak) package, featuring 17.5 mΩ R_DS(on) at V_GS = 10 V, 160 A pulsed drain current, and integrated body diode with 63 ns reverse recovery time. It serves as a high-current switching element in DC-DC converters, motor drives, and power inverters operating up to 175 °C junction temperature.

For engineers reviewing the IRFZ44NLPBF datasheet, IRFZ44NLPBF pinout, IRFZ44NLPBF application, or IRFZ44NLPBF equivalent, key selection criteria include R_DS(on), avalanche energy rating (530 mJ), gate charge (63 nC), thermal resistance (1.5 °C/W junction-to-case), and body diode performance under hard-switching conditions.

Technical Context

This MOSFET employs planar vertical DMOS technology optimized for low conduction loss and robust unclamped inductive switching (UIS) capability. Its gate threshold voltage (2.0–4.0 V) enables compatibility with 5 V and 10 V logic-level drive, while the 19 S transconductance ensures stable gain across load and temperature ranges.

The device integrates a fast-recovery body diode with 1.3 V forward voltage at 25 A and 95 ns max reverse recovery time, supporting synchronous rectification and freewheeling in half-bridge topologies. Thermal design is enabled by its 1.5 °C/W R_θJC, allowing direct heatsink mounting without isolation pads in many industrial applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	55 V - Withstands 55 V drain-source blocking voltage before breakdown; defines maximum bus voltage in buck/boost stages.
R_DS(on)	17.5 mΩ @ V_GS = 10 V, I_D = 25 A - Determines conduction loss (I²R) in continuous high-current paths like motor phase legs.
Q_g	63 nC - Total gate charge required to fully switch; directly impacts driver power and switching loss at high frequency.
E_AS	530 mJ - Single-pulse avalanche energy rating; enables reliable operation during inductive turn-off transients without snubbers.
t_rr	63–95 ns - Body diode reverse recovery time; critical for minimizing cross-conduction loss in bridge configurations.
R_θJC	1.5 °C/W - Junction-to-case thermal resistance; allows accurate heatsink sizing when mounted with thermal interface material.
I_D @ T_C = 100°C	35 A - Continuous safe operating current at 100 °C case temperature; sets derated current limit for enclosed enclosures.

Pinout & Package

IRFZ44NLPBF uses the TO-262 (D-Pak) surface-mount package with three terminals: Drain (tab), Source (pin 2), and Gate (pin 1). The exposed drain tab provides low-inductance, low-thermal-resistance path to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal, electrically connected to package backside	Must be electrically isolated from heatsink unless circuit topology requires common-drain configuration; primary thermal path.
Source (Pin 2)	Reference node for gate drive and current sensing	Serves as return path for load current and ground reference for gate driver IC; low-inductance layout essential for EMI control.
Gate (Pin 1)	Control electrode for channel formation	High-impedance input requiring <100 nA leakage; sensitive to ESD; must be driven with low-impedance source to minimize ringing.

Key Features

Feature	Design Value
Low R_DS(on) with 10 V gate drive	Enables efficient high-current switching without requiring gate boost circuits or level shifters in 5–12 V systems.
High UIS ruggedness (530 mJ)	Eliminates need for external clamping diodes in relay drivers, solenoid controls, and flyback transformer primary switches.
Fast body diode (t_rr ≤ 95 ns)	Reduces switching losses in synchronous rectifier and half-bridge freewheeling modes without external Schottky replacement.
Lead-free and RoHS-compliant (L suffix)	Meets global environmental compliance requirements for industrial and consumer end equipment without process requalification.
Wide operating temperature range	Junction temperature support from –55 °C to +175 °C enables deployment in automotive engine compartments and industrial motor controllers.

Applications

DC-DC Power Supply

Brushed DC Motor Drive

Use Scenario: High-efficiency 12 V to 5 V/3.3 V synchronous buck converter in telecom power modules.

IC Role / Device Role: High-side main switch handling up to 49 A continuous output current.

Use Value: Low 17.5 mΩ R_DS(on) minimizes conduction loss at full load; 63 nC Q_g supports 200–500 kHz switching with standard gate drivers.

Use Scenario: H-bridge driver for 24 V, 30 A brushed motors in automated warehouse conveyors.

IC Role / Device Role: Low-side switching element with integrated body diode for freewheeling current path.

Use Value: 95 ns t_rr limits shoot-through risk during direction reversal; 530 mJ E_AS withstands inductive kickback during emergency stop.

Uninterruptible Power Supply (UPS)

AC Induction Motor Inverter

Use Scenario: Battery-to-AC inverter stage in line-interactive UPS with 48 V DC input.

IC Role / Device Role: Output stage MOSFET in full-bridge topology switching at 16 kHz.

Use Value: 1.5 °C/W R_θJC enables direct heatsink mounting; 175 °C max T_J supports sustained overload conditions during brownouts.

Use Scenario: 3-phase inverter driving 1.5 kW AC induction motor in HVAC blower systems.

IC Role / Device Role: Phase-leg switch with body diode conducting commutation current during PWM dead-time.

Use Value: 1.3 V V_SD at 25 A reduces freewheeling conduction loss; 35 A I_D @ 100 °C supports thermal derating in sealed enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP40NF10	100 V V_(BR)DSS, 40 A I_D, 28 mΩ R_DS(on), TO-220 package	Higher voltage rating but higher on-resistance and larger thermal resistance (R_θJC = 2.5 °C/W)	Preferred where bus voltage exceeds 55 V; less suitable for space-constrained or high-efficiency 12–48 V designs.
IRFZ44NPBF	Same die, leaded TO-220 package, identical electrical specs, non-lead-free	No RoHS compliance; requires different soldering profile and inventory segregation	Only acceptable for legacy repair or non-regulated markets; not recommended for new designs targeting EU/China RoHS.

Compared with STP40NF10 and IRFZ44NPBF, the IRFZ44NLPBF delivers superior efficiency in 48 V systems due to lower R_DS(on) and better thermal coupling, while maintaining RoHS compliance and surface-mount assembly compatibility.

Availability

IRFZ44NLPBF is available at Aetrix Electronics and suitable for DC-DC power supplies, brushed DC motor drives, uninterruptible power supplies, and AC induction motor inverters requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFZ44NLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The IRFZ44NLPBF belongs to Infineon's legacy HEXFET® power MOSFET product line, engineered for high-current, medium-voltage switching in industrial motor control, power conversion, and battery-powered equipment.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IRFZ44NLPBF supports 35 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 49 A rating at 25 °C and must be used for thermal design in enclosed or high-ambient environments.

Does the IRFZ44NLPBF require a gate resistor for stability?

Yes - a series gate resistor (typically 10–22 Ω) is recommended to dampen gate ringing caused by the 7.5 nH internal source inductance and PCB trace inductance. Without it, overshoot and oscillation can exceed ±20 V V_GS rating and cause premature failure.

Can the body diode be used for synchronous rectification?

No - the body diode has relatively high V_SD (1.3 V) and slow t_rr (63–95 ns), making it unsuitable for high-frequency synchronous rectification. External Schottky or MOSFET-based synchronous rectifiers are required for >100 kHz operation to maintain efficiency.

Is the TO-262 package compatible with standard D-Pak footprints?

Yes - IRFZ44NLPBF uses the industry-standard TO-262 (D-Pak) outline with 2.54 mm pin pitch and defined land pattern per JEDEC MS-013. It is mechanically and thermally compatible with all standard D-Pak reflow and wave soldering processes.

IRFZ44NLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 49A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 17.5mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 63 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1470 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 94W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRFZ44NLPBF FAQ

1.How can I place an order for IRFZ44NLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFZ44NLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFZ44NLPBF reliable?

The price and inventory of IRFZ44NLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ44NLPBF is usually 5 days.

3.What payment methods are accepted for IRFZ44NLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ44NLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFZ44NLPBF?

IRFZ44NLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFZ44NLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFZ44NLPBF?

For technical support, including IRFZ44NLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ44NLPBF requirements.

6.How does Aetrix verify that IRFZ44NLPBF is sourced from the original manufacturer or authorized distributors?

All IRFZ44NLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ44NLPBF meets industry standards.

7.What is the process for return or replacement of IRFZ44NLPBF?

All IRFZ44NLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ44NLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFZ44NLPBF part is unused and in its original packaging.

Return procedure for IRFZ44NLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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