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Infineon Technologies IRFZ44NSPBF
- Part No.:
- IRFZ44NSPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRFZ44NSPBF.pdf
- Description:
- MOSFET N-CH 55V 49A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:4,117
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Product details
Overview
IRFZ44NSPBF from Infineon Technologies is a 55 V, 49 A N-channel enhancement-mode MOSFET in TO-262 (D-Pak) package, optimized for high-efficiency DC-DC conversion and motor drive switching. It features 17.5 mΩ RDS(on) at VGS = 10 V, 63 nC total gate charge, and 530 mJ single-pulse avalanche energy-enabling robust operation in 24 V industrial power supplies and brushed DC motor H-bridge drivers.
For engineers reviewing the IRFZ44NSPBF datasheet, IRFZ44NSPBF pinout, IRFZ44NSPBF application, or IRFZ44NSPBF equivalent, key selection criteria include its 1.5 °C/W junction-to-case thermal resistance, 44 V VDS rating under pulsed conditions, body diode reverse recovery time (63–95 ns), and gate threshold voltage range (2.0–4.0 V) for reliable TTL/CMOS-level drive compatibility.
Technical Context
This MOSFET employs planar silicon process technology with integrated body diode, supporting unidirectional current flow in synchronous rectification and freewheeling paths. Its low RDS(on) and moderate Qg/Qgd ratio (63 nC / 23 nC) enable fast switching with reduced Miller-induced shoot-through risk in half-bridge topologies.
The device is characterized for operation from –55 °C to +175 °C junction temperature, with linear derating above 25 °C ambient (0.63 W/°C). Avalanche capability (EAS = 530 mJ) and repetitive diode recovery (Qrr = 170–260 nC) support inductive load handling without external snubbers in constrained-space designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 55 V - Maximum drain-source blocking voltage before avalanche onset; sets upper limit for 24 V bus systems with 100 % margin. |
| RDS(on) | 17.5 mΩ @ VGS = 10 V, ID = 25 A - Directly determines conduction loss (Pcond ≈ I² × R) in continuous-current applications. |
| Qg | 63 nC - Total gate charge required to fully switch; defines driver strength requirement and switching loss trade-off. |
| tr/tf | 60 ns / 45 ns @ ID = 25 A - Rise/fall times constrain maximum PWM frequency and EMI generation in hard-switched converters. |
| RθJC | 1.5 °C/W - Junction-to-case thermal resistance enables direct heatsink mounting; critical for thermal design of high-power PCBs. |
| EAS | 530 mJ - Single-pulse avalanche energy rating confirms safe operation during inductive turn-off transients without clamping. |
Pinout & Package
IRFZ44NSPBF uses the TO-262 (D-Pak) surface-mount package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in standard S-D-G order (Source–Drain–Gate) when viewed from the top with marking side up and leads pointing downward.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Source (S) | Reference node for gate drive and current return path | Connected to ground or low-side switch node; carries full load current and must be routed with low-inductance copper pour. |
| Drain (D) | Main power output terminal and heat-sinking surface | Exposed metal pad on bottom of package; electrically tied to drain and serves as primary thermal interface to heatsink or PCB copper. |
| Gate (G) | Control input for channel modulation | High-impedance MOS gate requiring <2.0 V minimum to turn on; sensitive to ESD and requires series resistor (10–22 Ω) for ringing suppression. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) with 10 V gate drive | Enables use with standard logic-level microcontrollers and gate drivers without level-shifting circuitry. |
| High avalanche energy rating | Supports reliable operation in inductive switching circuits (e.g., solenoid drivers) without external protection components. |
| Fast body diode recovery | 63 ns typical trr reduces reverse recovery losses in synchronous rectifier and freewheeling applications. |
| Lead-free and RoHS-compliant | Meets global environmental compliance requirements for industrial and consumer electronics manufacturing. |
Applications
| Brushed DC Motor Control | 24 V Industrial Power Supply |
|---|---|
Use Scenario: H-bridge driver for 24 V, 30 A brushed DC motors in automated gate actuators. IC Role / Device Role / Timing Role: Low-side and high-side switching element enabling bidirectional rotation and dynamic braking via PWM-controlled conduction. Use Value: 17.5 mΩ RDS(on) limits I²R heating to <0.5 W at 30 A, allowing compact heatsinkless PCB layout. | Use Scenario: Primary-side synchronous rectifier in isolated 24 V/10 A flyback converter for factory automation PLCs. IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode to reduce forward voltage drop and improve efficiency. Use Value: Body diode VSD ≤ 1.3 V at 25 A enables >2 % efficiency gain over 40 V Schottky alternatives at full load. |
| LED Constant-Current Driver | UPS Inverter Stage |
Use Scenario: High-current LED string dimming in commercial lighting using buck topology with 48 V input. IC Role / Device Role / Timing Role: Main switching transistor controlling average current through inductor-based current regulation loop. Use Value: 63 nC Qg allows clean 100 kHz switching with standard 1 A gate driver ICs, minimizing dead-time distortion. | Use Scenario: Half-bridge leg in 1 kVA offline UPS inverter delivering 230 V AC from 350 V DC bus. IC Role / Device Role / Timing Role: High-frequency switching element in push-pull configuration driving transformer primary winding. Use Value: 530 mJ EAS withstands bus voltage overshoot during load dump events without failure or parameter shift. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP55NF06L | RDS(on) = 14 mΩ @ 10 V, but higher Qg = 85 nC; TO-220 package with higher RθJA. | Better conduction loss but slower switching; less suitable for >50 kHz PWM due to increased gate drive demand. | Prefer when thermal budget allows larger heatsink and switching frequency is ≤30 kHz. |
| IRFZ44N | Identical die and specs; non-lead-free version with SnPb terminations and different date code format. | No functional difference; not compliant with RoHS or modern environmental standards. | Select only for legacy repair or non-RoHS environments where Pb exemption applies. |
Compared with STP55NF06L and IRFZ44N, IRFZ44NSPBF offers optimal balance of low RDS(on), moderate gate charge, lead-free compliance, and D-Pak thermal performance-making it preferred for new 24–48 V industrial designs requiring surface-mount assembly and mid-frequency switching.
Availability
IRFZ44NSPBF is available at Aetrix Electronics and suitable for brushed DC motor control, 24 V industrial power supplies, LED constant-current drivers, and UPS inverter stages requiring stable component supply across production lifecycles.
Supply support for IRFZ44NSPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
The StrongIRFET™ product line-including IRFZ44NSPBF-is engineered for high-current, medium-voltage switching in industrial motor drives, power supplies, and battery-powered equipment where reliability and thermal performance are critical.
FAQ
What is the maximum continuous drain current for IRFZ44NSPBF at 100°C case temperature?
The maximum continuous drain current is 35 A at TC = 100°C and VGS = 10 V. This rating reflects thermal derating from the 49 A value at 25°C case temperature, based on the device's 0.63 W/°C linear derating factor and 94 W power dissipation limit at TC = 25°C.
Can IRFZ44NSPBF be driven directly by a 3.3 V microcontroller GPIO?
No-its gate threshold voltage ranges from 2.0 V to 4.0 V, and full enhancement requires ≥10 V VGS to achieve rated RDS(on). A 3.3 V signal may partially turn on the device, causing excessive conduction loss and thermal runaway. A dedicated gate driver or level shifter is required for reliable operation.
Does IRFZ44NSPBF include an integrated body diode, and what are its key parameters?
Yes-it features a monolithic p-n junction body diode with VSD ≤ 1.3 V at IS = 25 A and TJ = 25°C. Reverse recovery time is 63–95 ns, and reverse recovery charge is 170–260 nC under specified test conditions (dI/dt = 100 A/µs), enabling use in freewheeling and synchronous rectification roles.
What is the recommended PCB layout practice for thermal management of IRFZ44NSPBF?
Maximize copper area connected to the exposed drain pad using multiple thermal vias (≥8 × 0.3 mm) to inner-layer ground or dedicated thermal planes. Maintain ≥1.5 mm clearance between gate trace and high-dV/dt nodes, and place gate resistor (12–22 Ω) as close as possible to the gate pin to suppress oscillation during switching transitions.
IRFZ44NSPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 49A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 17.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 63 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1470 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.8W (Ta), 94W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRFZ44NSPBF FAQ
1.How can I place an order for IRFZ44NSPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFZ44NSPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFZ44NSPBF reliable?
The price and inventory of IRFZ44NSPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ44NSPBF is usually 5 days.
3.What payment methods are accepted for IRFZ44NSPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ44NSPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFZ44NSPBF?
IRFZ44NSPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFZ44NSPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFZ44NSPBF?
For technical support, including IRFZ44NSPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ44NSPBF requirements.
6.How does Aetrix verify that IRFZ44NSPBF is sourced from the original manufacturer or authorized distributors?
All IRFZ44NSPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ44NSPBF meets industry standards.
7.What is the process for return or replacement of IRFZ44NSPBF?
All IRFZ44NSPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ44NSPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFZ44NSPBF part is unused and in its original packaging.
Return procedure for IRFZ44NSPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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