Infineon Technologies IRFZ44NSTRR
- Part No.:
- IRFZ44NSTRR
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRFZ44NSTRR.pdf
- Description:
- MOSFET N-CH 55V 49A D2PAK
- Quantity:
- Payment:

- Shipping:

Inventory:8,406
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Product details
Overview
IRFZ44NSTRR from Infineon Technologies is a 55 V, 49 A N-channel enhancement-mode power MOSFET in TO-262 (D-Pak) package, optimized for high-current switching in DC-DC converters, motor drives, and power inverters with RDS(on) = 17.5 mΩ at VGS = 10 V and TJ = 25°C.
For engineers reviewing the IRFZ44NSTRR datasheet, IRFZ44NSTRR pinout, IRFZ44NSTRR application, or IRFZ44NSTRR equivalent, key selection criteria include continuous drain current at elevated temperature (35 A @ 100°C), avalanche energy rating (EAS = 530 mJ), gate charge (Qg = 63 nC), and thermal resistance (RθJC = 1.5 °C/W).
Technical Context
This MOSFET employs a planar silicon process with integrated body diode, supporting unidirectional high-current conduction and fast recovery (trr = 63–95 ns, Qrr = 170–260 nC). Its gate threshold voltage (VGS(th) = 2.0–4.0 V) enables direct drive from 5 V logic-level controllers.
The device features low output capacitance (Coss = 360 pF @ VDS = 25 V) and moderate reverse transfer capacitance (Crss = 88 pF), supporting efficient hard-switching up to ~100 kHz in buck and half-bridge topologies with minimal Miller-induced shoot-through risk.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 55 V - Maximum blocking voltage before avalanche onset; sets upper limit for bus voltage in 48 V systems. |
| RDS(on) | 17.5 mΩ @ VGS = 10 V, ID = 25 A - Determines conduction loss (Pcond ≈ I² × R) in high-current paths. |
| ID @ TC = 100°C | 35 A - Realistic continuous current capability under heatsink-limited thermal conditions. |
| Qg | 63 nC - Gate drive energy requirement; defines minimum driver peak current (e.g., 2.1 A for 30 ns rise time). |
| EAS | 530 mJ - Single-pulse avalanche robustness; supports inductive load switching without snubbers. |
| RθJC | 1.5 °C/W - Junction-to-case thermal resistance; enables accurate heatsink sizing when mounted with thermal interface material. |
| trr | 63 ns (typ.) - Body diode reverse recovery time; impacts switching loss and EMI in freewheeling operation. |
Pinout & Package
IRFZ44NSTRR uses a 3-pin TO-262 (D-Pak) surface-mount package with exposed drain pad for thermal and electrical connection. The package is RoHS-compliant and lead-free (as indicated by "P" in assembly code).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D) | Main current-carrying terminal (connected to exposed copper pad) | Primary heat path to PCB; must be soldered to large copper area for thermal performance. |
| Gate (G) | Control input for channel modulation | High-impedance node requiring low-inductance gate drive trace and local decoupling. |
| Source (S) | Reference node for gate drive and current return path | Forms common reference for driver IC; source inductance (LS = 7.5 nH) affects switching speed and ringing. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) with 10 V gate drive | Enables use with standard logic-level microcontrollers and gate drivers without level-shifting. |
| High pulsed drain current (IDM = 160 A) | Supports short-term overload conditions such as motor startup or inrush limiting. |
| Robust avalanche rating (EAS = 530 mJ) | Eliminates need for external clamping circuits in inductive switching applications. |
| Fast body diode recovery (trr ≤ 95 ns) | Reduces switching losses and voltage overshoot during synchronous rectification or freewheeling. |
| Thermally enhanced D-Pak package | Provides 1.5 °C/W junction-to-case resistance-superior to TO-220 for SMT thermal management. |
Applications
| Motor Drive Inverter Stage | DC-DC Synchronous Buck Converter |
|---|---|
Use Scenario: Half-bridge leg in 24–48 V BLDC motor controller driving 500 W fan or pump load. IC Role / Device Role / Timing Role: High-side and low-side switching element handling bidirectional PWM at 20 kHz with body-diode commutation. Use Value: Low RDS(on) minimizes I²R loss at 30 A RMS; avalanche rating absorbs back-EMF spikes during abrupt current interruption. | Use Scenario: Main switch in 12 V input → 3.3 V/20 A output point-of-load converter for FPGA power rail. IC Role / Device Role / Timing Role: Primary high-side switch operating at 500 kHz with synchronous rectification via second MOSFET. Use Value: 63 nC Qg balances drive loss and switching speed; Coss = 360 pF limits capacitive turn-off loss at high frequency. |
| Uninterruptible Power Supply (UPS) Output Stage | Industrial Solenoid Driver |
Use Scenario: H-bridge output stage delivering 230 V AC sine-wave output from 350 V DC bus using SPWM modulation. IC Role / Device Role / Timing Role: Bridge arm switch sustaining repetitive 55 V blocking and conducting 25 A peak load current. Use Value: V(BR)DSS = 55 V provides 10% margin over 48 V nominal bus; RθJC = 1.5 °C/W ensures stable operation at 75°C case temperature. | Use Scenario: High-side switch controlling 24 V, 10 A solenoid valve in factory automation PLC output module. IC Role / Device Role / Timing Role: On/off actuator driver with controlled turn-on/turn-off to suppress coil flyback voltage. Use Value: EAS = 530 mJ safely clamps 100 mJ flyback energy without external TVS; td(off) = 44 ns enables precise timing control. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP55NF06L | RDS(on) = 14 mΩ @ 10 V but V(BR)DSS = 60 V; higher Qg = 85 nC | Better voltage margin, but increased gate drive demand and slightly slower switching | Preferred where 60 V bus margin is critical and gate drive strength allows higher Qg. |
| FQP30N06L | RDS(on) = 18 mΩ @ 10 V; lower ID rating (30 A @ 25°C); no specified EAS | Lower cost, but reduced avalanche ruggedness and thermal headroom | Suitable for non-critical, low-duty-cycle loads where ESD/avalanche stress is absent. |
Compared with STP55NF06L and FQP30N06L, IRFZ44NSTRR offers balanced trade-offs: superior avalanche robustness versus FQP30N06L and lower gate charge versus STP55NF06L-making it optimal for thermally constrained, inductive-switching designs requiring reliability without over-engineering.
Availability
IRFZ44NSTRR is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, and industrial solenoid control requiring stable component supply across production lifecycles.
Supply support for IRFZ44NSTRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
The IRFZ series targets cost-sensitive, high-reliability power switching applications-designed for robustness in harsh environments and compatibility with legacy 5 V/10 V gate drive architectures.
FAQ
Is IRFZ44NSTRR suitable for 5 V logic-level gate drive?
No. IRFZ44NSTRR has a gate threshold voltage range of 2.0–4.0 V and requires ≥10 V VGS to achieve its rated RDS(on) of 17.5 mΩ. Driving it with only 5 V results in significantly higher on-resistance (>50 mΩ), excessive conduction loss, and potential thermal runaway under load.
What is the maximum safe operating temperature for continuous operation?
The absolute maximum junction temperature is +175°C, but continuous operation should be limited to TJ ≤ 150°C to ensure long-term reliability. At TC = 100°C, the device supports 35 A continuous drain current-this defines the practical thermal ceiling when mounted on a properly sized PCB copper area.
Does IRFZ44NSTRR have a built-in body diode, and is it suitable for synchronous rectification?
Yes, it integrates a parasitic p-n junction body diode with VSD = 1.3 V at 25 A and trr = 63–95 ns. While usable for asynchronous rectification, its relatively high forward voltage and recovery charge make it less efficient than dedicated Schottky or trench-MOSFET synchronous rectifiers in high-frequency, high-efficiency designs.
Can IRFZ44NSTRR replace IRFZ44N in existing PCB layouts?
Yes. IRFZ44NSTRR is the tape-and-reel version of IRFZ44N in identical TO-262 (D-Pak) packaging with same pinout, thermal, and electrical specifications. No layout or schematic changes are required-only handling and assembly process adjustments for surface-mount reflow.
IRFZ44NSTRR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 49A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 17.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 63 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1470 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.8W (Ta), 94W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRFZ44NSTRR FAQ
1.How can I place an order for IRFZ44NSTRR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFZ44NSTRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFZ44NSTRR reliable?
The price and inventory of IRFZ44NSTRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ44NSTRR is usually 5 days.
3.What payment methods are accepted for IRFZ44NSTRR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ44NSTRR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFZ44NSTRR?
IRFZ44NSTRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFZ44NSTRR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFZ44NSTRR?
For technical support, including IRFZ44NSTRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ44NSTRR requirements.
6.How does Aetrix verify that IRFZ44NSTRR is sourced from the original manufacturer or authorized distributors?
All IRFZ44NSTRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ44NSTRR meets industry standards.
7.What is the process for return or replacement of IRFZ44NSTRR?
All IRFZ44NSTRR units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ44NSTRR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFZ44NSTRR part is unused and in its original packaging.
Return procedure for IRFZ44NSTRR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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