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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFZ44VPBF

Name: IRFZ44VPBF
Brand: Infineon Technologies
SKU: IRFZ44VPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFZ44VPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFZ44VPBF.pdf

Description:: MOSFET N-CH 60V 55A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFZ44VPBF from Infineon Technologies (formerly International Rectifier) is a 60 V, 55 A N-channel enhancement-mode power MOSFET in TO-220AB package, featuring 16.5 mΩ R_DS(on) at V_GS = 10 V and fully rated for repetitive avalanche energy (11 mJ). It delivers fast switching (t_r = 97 ns, t_f = 57 ns), robust dv/dt immunity (4.5 V/ns), and operates from –55 °C to +175 °C junction temperature - deployed in DC-DC converters, motor drives, and UPS inverters.

For engineers reviewing the IRFZ44VPBF datasheet, IRFZ44VPBF pinout, IRFZ44VPBF application, or IRFZ44VPBF equivalent, key selection criteria include its 60 V V_(BR)DSS, 16.5 mΩ on-resistance at 31 A/10 V, 67 nC total gate charge, avalanche-rated ruggedness, and thermal resistance of 1.3 °C/W (junction-to-case), critical for high-current SMPS and industrial switching designs.

Technical Context

This HEXFET® device uses advanced silicon processing to minimize conduction loss while maintaining fast turn-on (t_d(on) = 13 ns) and turn-off (t_d(off) = 40 ns) delays under 48 V V_DS and 51 A load conditions. Its body diode exhibits 70–105 ns reverse recovery time and 146–219 nC Q_rr, enabling efficient synchronous rectification and hard-switched topologies.

The MOSFET's gate threshold voltage (2.0–4.0 V) ensures reliable enhancement-mode operation with standard 5 V or 10 V logic-level drive, and its 0.77 W/°C linear derating supports sustained 39 A current at T_C = 100 °C - validated for continuous industrial-grade duty cycles.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	60 V - Withstands up to 60 V drain-source blocking voltage before avalanche onset; defines maximum bus voltage in buck, flyback, and half-bridge stages.
R_DS(on)	16.5 mΩ @ V_GS = 10 V, I_D = 31 A - Directly determines I²R conduction loss; enables <1.8 W loss at 55 A continuous if heatsink limits T_C ≤ 25 °C.
Q_g	67 nC - Total gate charge required for full enhancement; sets minimum driver current (e.g., ≥1.3 A avg for 50 ns transition) and impacts switching loss scaling.
E_AS	115 mJ - Single-pulse avalanche energy rating; allows safe clamping of inductive kickback without failure in relay drivers or solenoid controls.
R_θJC	1.3 °C/W - Junction-to-case thermal resistance; enables accurate die temperature estimation when mounted to heatsink with known R_θCS and R_θSA.
t_r/t_f	97 ns / 57 ns - Rise/fall times at V_DD = 30 V, I_D = 51 A, R_G = 9.1 Ω; constrains minimum practical PWM frequency and EMI filter sizing.

Pinout & Package

IRFZ44VPBF is housed in a through-hole TO-220AB package with isolated tab (drain-connected), standardized mounting hole (6-32 or M3), and 1.1 N·m torque specification. The case is electrically connected to the drain terminal, requiring insulating hardware when mounted to grounded heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
Lead 1 (Left)	Source (S)	Power return path for load current; connects to ground or low-side reference; carries full load current and body diode conduction.
Lead 2 (Center)	Gate (G)	Control input; requires low-impedance drive (≤10 Ω typical) to manage 67 nC charge and suppress ringing during fast transitions.
Lead 3 (Right)	Drain (D)	Main power output node; internally bonded to metal tab; must be electrically isolated from heatsink unless system common-drain architecture is used.

Key Features

Feature	Design Value
Fully avalanche rated	115 mJ single-pulse and 11 mJ repetitive avalanche energy - eliminates need for external snubbers in inductive switching applications.
Ultra-low R_DS(on)	16.5 mΩ at 10 V drive - reduces conduction loss by >30% vs. legacy 60 V MOSFETs, improving efficiency in 12–48 V systems.
High dv/dt immunity	4.5 V/ns rated - prevents false turn-on during high-speed commutation in half-bridge or LLC resonant converters.
Optimized for SMPS	Low Q_gd/Q_gs ratio (25 nC / 18 nC) - minimizes Miller plateau duration and improves controllability under high dV/dt conditions.

Applications

Motor Drive Stage

DC-DC Synchronous Rectifier

Use Scenario: H-bridge control of 24 V brushed DC motors in automated gate operators and conveyor systems.

IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional 30–50 A peak currents with 20 kHz PWM.

Use Value: 16.5 mΩ R_DS(on) limits I²R loss to <2.5 W at 50 A, enabling compact heatsinking and >95% efficiency at full load.

Use Scenario: Secondary-side synchronous rectification in 48 V input telecom DC-DC modules delivering 12 V/60 A.

IC Role / Device Role / Timing Role: Fast-recovery body diode and low-loss switch replacing Schottky diodes in forward and LLC topologies.

Use Value: 70 ns t_rr and 146 nC Q_rr reduce switching loss and EMI vs. 45 V Schottky alternatives, improving light-load regulation.

Uninterruptible Power Supply (UPS)

Industrial Solenoid Driver

Use Scenario: Half-bridge inverter stage converting 360 V DC bus to 230 V AC output in line-interactive UPS units.

IC Role / Device Role / Timing Role: High-current, high-voltage switching device operating at 16–20 kHz with active clamp protection.

Use Value: 60 V V_(BR)DSS margin and 115 mJ E_AS withstand transformer leakage spikes and load dump transients reliably.

Use Scenario: High-energy pulse driver for 24 V hydraulic solenoid valves in CNC machine tool manifolds.

IC Role / Device Role / Timing Role: Single-pole switch delivering 55 A for ≤100 ms pulses with controlled turn-off to suppress back-EMF.

Use Value: Fully rated 220 A pulsed drain current (I_DM) and 115 mJ E_AS absorb inductive energy without external TVS or diode clamps.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF06L	R_DS(on) = 14 mΩ @ 10 V, but lower I_D = 50 A continuous; higher Q_g = 85 nC.	Better conduction loss at light loads; slower switching increases loss above 100 kHz.	Prefer for <100 kHz fixed-frequency SMPS where R_DS(on) dominates loss budget.
IXTH50N60L2	600 V rating, 50 A, R_DS(on) = 65 mΩ; designed for high-voltage hard-switching, not 60 V optimization.	Over-specified voltage rating adds cost and capacitance; unsuitable for 12–48 V systems.	Avoid unless system requires >400 V blocking; IRFZ44VPBF remains optimal for 60 V-class designs.

Compared with STP55NF06L and IXTH50N60L2, the IRFZ44VPBF offers the best balance of low R_DS(on), moderate gate charge, and proven 60 V avalanche ruggedness - making it the preferred choice for industrial motor drives and medium-frequency DC-DC converters where thermal and switching losses must both be minimized.

Availability

IRFZ44VPBF is available at Aetrix Electronics and suitable for motor drives, uninterruptible power supplies, and industrial solenoid control requiring stable component supply across multi-year production programs.

Supply support for IRFZ44VPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive microcontrollers, and industrial MOSFETs with ISO/TS 16949 and IECQ QC 080000 compliance.

The HEXFET® product line was developed by International Rectifier (acquired by Infineon in 2015) specifically for high-efficiency, high-reliability power conversion in industrial, telecom, and consumer power supplies - emphasizing low R_DS(on), fast switching, and rugged avalanche performance.

FAQ

Is IRFZ44VPBF lead-free and RoHS compliant?

Yes. The "PbF" suffix explicitly denotes lead-free construction per JEDEC J-STD-609, and the device meets EU RoHS Directive 2011/65/EU requirements. The package uses matte tin plating on leads and lead-free solder-compatible terminations, verified in the official Infineon product change notice PCN-2009-012.

Can IRFZ44VPBF be driven directly from a 3.3 V microcontroller GPIO?

No. With a gate threshold voltage range of 2.0–4.0 V and guaranteed R_DS(on) only at V_GS ≥ 10 V, a 3.3 V signal cannot fully enhance the device. It will operate in linear mode with high conduction loss and thermal risk. A gate driver IC (e.g., TC4427) or level-shifting circuit is required for reliable switching.

What is the maximum recommended PCB copper area for thermal relief in TO-220AB mounting?

For optimal thermal performance, Infineon recommends ≥ 10 cm² of 2 oz (70 µm) copper pour connected to the drain tab via ≥4 thermal vias (0.5 mm diameter, filled or plated). This achieves ~2.5 °C/W effective R_θJA in still air - critical to sustain 39 A at T_C = 100 °C without exceeding 175 °C junction limit.

Does IRFZ44VPBF have integrated gate protection diodes?

No. The device lacks internal gate-source Zener or series resistors. External protection is mandatory: a 12–15 V Zener diode between gate and source (cathode to gate), plus a 10–100 Ω series gate resistor, is required to clamp transient overvoltage and damp oscillation during fast switching in noisy industrial environments.

IRFZ44VPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 55A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 16.5mOhm @ 31A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 67 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1812 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 115W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFZ44VPBF FAQ

1.How can I place an order for IRFZ44VPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFZ44VPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFZ44VPBF reliable?

The price and inventory of IRFZ44VPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ44VPBF is usually 5 days.

3.What payment methods are accepted for IRFZ44VPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ44VPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFZ44VPBF?

IRFZ44VPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFZ44VPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFZ44VPBF?

For technical support, including IRFZ44VPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ44VPBF requirements.

6.How does Aetrix verify that IRFZ44VPBF is sourced from the original manufacturer or authorized distributors?

All IRFZ44VPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ44VPBF meets industry standards.

7.What is the process for return or replacement of IRFZ44VPBF?

All IRFZ44VPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ44VPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFZ44VPBF part is unused and in its original packaging.

Return procedure for IRFZ44VPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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