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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFZ44VZ

Name: IRFZ44VZ
Brand: Infineon Technologies
SKU: IRFZ44VZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFZ44VZ

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFZ44VZ.pdf

Description:: MOSFET N-CH 60V 57A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFZ44VZ from Infineon Technologies is an N-channel enhancement-mode HEXFET® Power MOSFET with 60 V V_DSS, 12 mΩ R_DS(on) at V_GS = 10 V, and 57 A continuous drain current at T_C = 25°C. It features 175°C maximum junction temperature, fast switching (t_d(on) = 14 ns, t_f = 38 ns), and rated repetitive avalanche energy up to 73 mJ. It is used in DC-DC converters, motor drives, and power supply synchronous rectification.

For engineers reviewing the IRFZ44VZ datasheet, IRFZ44VZ pinout, IRFZ44VZ application, or IRFZ44VZ equivalent, key selection criteria include on-resistance vs. thermal derating, gate charge (Q_g = 43–65 nC), body diode recovery (Q_rr = 17–26 nC, t_rr = 23–35 ns), and TO-220AB package thermal resistance (R_θJC = 1.64°C/W).

Technical Context

This MOSFET employs advanced silicon processing to minimize conduction loss per unit area while maintaining robust avalanche capability. Its low R_DS(on) (9.6–12 mΩ) and high transconductance (g_fs = 25 S typical) support high-efficiency switching in hard-switched topologies.

The integrated body diode exhibits V_SD = 1.3 V max at 34 A and fast reverse recovery (t_rr ≤ 35 ns), enabling use in freewheeling and synchronous rectifier roles without external diode supplementation in many mid-power applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage before avalanche; sets upper limit for bus voltage in buck, flyback, and half-bridge designs.
R_DS(on)	9.6–12 mΩ @ V_GS = 10 V - Determines conduction loss (P_cond ≈ I_D² × R_DS(on)) at rated current; critical for thermal design at 57 A.
I_D (continuous)	57 A @ T_C = 25°C - Continuous current rating under ideal heatsinking; derates to 40 A at T_C = 100°C.
Q_g	43–65 nC - Total gate charge required to fully switch; directly impacts driver sizing and switching loss (E_sw ∝ Q_g × V_GS).
E_AS	73 mJ (tested) - Single-pulse unclamped inductive avalanche energy; enables robustness against inductive load turn-off transients.
t_rr / Q_rr	23–35 ns / 17–26 nC - Body diode reverse recovery metrics; governs shoot-through risk and EMI in synchronous rectification.
R_θJC	1.64°C/W - Junction-to-case thermal resistance; defines minimum heatsink requirement when mounted to flat greased surface.

Pinout & Package

IRFZ44VZ is housed in a TO-220AB package with standard three-terminal layout: Drain (D) connected to tab and pins 1 & 2, Source (S) at pin 3, Gate (G) at pin 1 (isolated from tab). The metal tab is electrically connected to Drain and serves as primary heat path.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab + Pins 1 & 2)	Main current-carrying terminal (high-side or low-side switch node)	Electrically tied to heatsink; requires isolation washer if heatsink is grounded; dominates thermal path and PCB copper pour design.
Source (Pin 3)	Reference node for gate drive and current sensing	Low-inductance connection essential for stable switching; internal source inductance L_S = 7.5 nH affects gate loop stability and dV/dt immunity.
Gate (Pin 1)	Control input for channel modulation	High-impedance MOS gate requiring <1 µA bias; sensitive to ringing due to Miller capacitance C_rss = 130 pF and Q_gd = 18 nC.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	9.6 mΩ typ. at 10 V gate drive - reduces conduction loss by >30% vs. legacy 60 V MOSFETs at same die size, enabling smaller heatsinks.
175°C junction rating	Maximum operating temperature - extends usable thermal margin in sealed enclosures or high ambient environments without derating.
Repetitive avalanche rated	73 mJ single-pulse, full T_j range - allows reliable operation in inductive switching without external snubbers in motor control and solenoid drivers.
Fast body diode	t_rr ≤ 35 ns, Q_rr ≤ 26 nC - supports synchronous rectification in 100–500 kHz SMPS with minimal cross-conduction loss.
Low gate charge	Q_g = 43 nC typ. - enables use with low-power gate drivers (e.g., TC4427) and reduces switching loss at 200–500 kHz frequencies.

Applications

DC-DC Buck Converter

Brushed DC Motor Drive

Use Scenario: 12–48 V input, 3–24 V output, 20–40 A load in telecom and industrial power supplies.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch; operates with 200–300 kHz PWM and 50–95% duty cycle.

Use Value: R_DS(on) = 9.6 mΩ minimizes conduction loss (<1.5 W at 40 A), while fast t_f = 38 ns limits switching loss in high-frequency operation.

Use Scenario: 24–48 V H-bridge driving 10–30 A brushed motors in robotics and actuation systems.

IC Role / Device Role / Timing Role: High-side and low-side quadrant switch; handles bidirectional current and regenerative braking via body diode conduction.

Use Value: Rated repetitive avalanche (73 mJ) absorbs inductive kickback during PWM off-time; V_SD = 1.3 V ensures low forward drop during freewheeling.

AC-DC PFC Stage

LED Driver (Boost Topology)

Use Scenario: Active front-end in 300–500 W offline power supplies with universal AC input.

IC Role / Device Role / Timing Role: Boost switch operating at 65–100 kHz with high peak currents (>30 A) and 0.3–0.6 duty cycle.

Use Value: Low Q_gd = 18 nC and C_rss = 130 pF reduce Miller-induced turn-on risk during high dV/dt transitions across drain.

Use Scenario: Constant-current boost LED driver for street lighting (48–72 V string, 1.5–3 A).

IC Role / Device Role / Timing Role: Main switching element in boost converter; switches at 250 kHz with 0.4–0.75 duty cycle.

Use Value: 175°C T_j rating allows sustained operation in thermally constrained outdoor enclosures; R_DS(on) stability over temperature ensures consistent efficiency across -40°C to +85°C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF06L	R_DS(on) = 14 mΩ @ 10 V; Q_g = 65 nC; T_jmax = 175°C; TO-220	Higher conduction loss at high current; slower switching due to higher Q_g	Preferred where cost sensitivity outweighs efficiency; suitable for <200 kHz operation with relaxed thermal constraints.
IXTP50N06T	R_DS(on) = 10.5 mΩ @ 10 V; Q_g = 48 nC; T_jmax = 175°C; TO-220	Lower R_DS(on) and similar Q_g; no specified avalanche rating	Better conduction efficiency but lacks documented avalanche robustness; requires snubber or clamping in inductive loads.

Compared with STP55NF06L and IXTP50N06T, IRFZ44VZ offers the best balance of low R_DS(on), moderate Q_g, and verified repetitive avalanche capability-making it preferred for motor drives and unclamped inductive switching where reliability under transient stress is critical.

Availability

IRFZ44VZ is available at Aetrix Electronics and suitable for DC-DC converters, brushed motor drives, AC-DC PFC stages, and LED boost drivers requiring stable component supply and long-term industrial availability.

Supply support for IRFZ44VZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRFZ44VZ belongs to Infineon's HEXFET® Power MOSFET product line, designed for high-efficiency, high-reliability switching in medium-power industrial and consumer power conversion systems.

FAQ

Is IRFZ44VZ lead-free and RoHS compliant?

Yes. IRFZ44VZPbF, IRFZ44VZSPbF, and IRFZ44VZLPbF variants are explicitly marked as lead-free and RoHS-compliant per Infineon's documentation. All versions meet JEDEC J-STD-020 moisture sensitivity level 1 and are qualified for reflow soldering at 260°C peak.

What is the maximum safe operating frequency for IRFZ44VZ in hard-switched applications?

IRFZ44VZ supports reliable hard-switched operation up to 500 kHz, provided gate drive strength (≥2 A peak), layout inductance (<10 nH), and thermal management (R_θJA ≤ 40°C/W on 2 oz copper) are optimized. At 300 kHz and 34 A, total switching loss is typically 1.8 W, confirmed by Fig. 18 waveforms and gate charge data.

Can IRFZ44VZ be used in parallel configurations?

Yes-its positive R_DS(on) temperature coefficient (Fig. 10 shows ~1.8× increase from 25°C to 175°C) enables stable current sharing. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and shared heatsinking. Derate total current by 15% for two devices and 25% for three or more.

Does IRFZ44VZ require a gate resistor, and what value is recommended?

Yes-a gate resistor is required to dampen ringing and control dI/dt. For 12 V gate drive and typical PCB layout, 10–22 Ω is recommended (per Fig. 13 test circuit). Lower values (≤10 Ω) improve switching speed but increase EMI; higher values (≥47 Ω) reduce EMI but raise switching loss and risk incomplete turn-on at high temperatures.

IRFZ44VZ Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 57A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 12mOhm @ 34A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 65 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1690 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 92W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFZ44VZ FAQ

1.How can I place an order for IRFZ44VZ through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFZ44VZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFZ44VZ reliable?

The price and inventory of IRFZ44VZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ44VZ is usually 5 days.

3.What payment methods are accepted for IRFZ44VZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ44VZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFZ44VZ?

IRFZ44VZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFZ44VZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFZ44VZ?

For technical support, including IRFZ44VZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ44VZ requirements.

6.How does Aetrix verify that IRFZ44VZ is sourced from the original manufacturer or authorized distributors?

All IRFZ44VZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ44VZ meets industry standards.

7.What is the process for return or replacement of IRFZ44VZ?

All IRFZ44VZ units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ44VZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFZ44VZ part is unused and in its original packaging.

Return procedure for IRFZ44VZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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