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Infineon Technologies IRFZ44VZL
- Part No.:
- IRFZ44VZL
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
IRFZ44VZL.pdf
- Description:
- MOSFET N-CH 60V 57A TO262
- Quantity:
- Payment:
- Shipping:
Inventory:7,020
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Product details
Overview
IRFZ44VZL from Infineon Technologies is an N-channel enhancement-mode HEXFET® Power MOSFET in D²PAK (TO-263) package, rated for 60 V VDSS, 12 mΩ RDS(on) at VGS = 10 V, and 57 A continuous drain current at TC = 25°C. It integrates a robust body diode with 1.3 V forward voltage and 23–35 ns reverse recovery time, and supports repetitive avalanche up to TJmax = 175°C - widely deployed in DC-DC synchronous buck converters and motor drive half-bridges.
For engineers reviewing the IRFZ44VZL datasheet, IRFZ44VZL pinout, IRFZ44VZL application, or IRFZ44VZL equivalent, key selection criteria include its 9.6–12 mΩ on-resistance tolerance, 43–65 nC total gate charge, 175°C junction rating, fast switching (tr = 62 ns, tf = 38 ns), and validated unclamped inductive avalanche capability under defined pulse conditions.
Technical Context
This MOSFET employs advanced silicon processing to minimize conduction loss per unit area while maintaining high thermal robustness. Its low RDS(on) and optimized gate charge profile (Qgd = 18 nC, Qgs = 11 nC) enable efficient hard-switching operation in high-frequency power stages up to several hundred kHz.
The device features a thermally limited single-pulse avalanche energy rating of 230 mJ and tested repetitive avalanche capability up to IAR = 73 A, supported by a 1.64°C/W junction-to-case thermal resistance and flat greased-sink interface (RθCS = 0.50°C/W).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Maximum blocking voltage before avalanche onset; defines upper rail limit in 48 V systems. |
| RDS(on) | 9.6–12 mΩ @ VGS = 10 V - Directly determines I²R conduction loss in high-current paths (e.g., 57 A × 12 mΩ = 3.9 W dissipation). |
| ID (continuous) | 57 A @ TC = 25°C - Specifies maximum steady-state current with case heatsinking; derates to 40 A at 100°C case temperature. |
| Qg | 43–65 nC - Total gate charge required for full turn-on; impacts driver sizing and switching loss (Esw ∝ Qg × VGS). |
| TJ max | 175°C - Enables reliable operation in sealed enclosures or high-ambient industrial environments without forced air cooling. |
| EAS | 230 mJ (thermally limited) - Quantifies safe single-pulse inductive energy absorption without failure; critical for flyback or H-bridge shoot-through margin. |
| VSD | 1.3 V @ IS = 34 A - Forward voltage of integrated body diode; affects freewheeling loss and dead-time design in synchronous rectification. |
Pinout & Package
IRFZ44VZL is housed in a surface-mount D²PAK (TO-263) package with three terminals: Drain (tab), Source (pins 1 & 2), and Gate (pin 3). The exposed drain pad provides low-inductance, high-current path and serves as primary thermal interface to PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main high-side current path and thermal interface | Electrically connected to internal die drain; must be soldered to large copper pour for thermal and EMI performance. |
| Source (Pins 1 & 2) | Reference node for gate drive and current return path | Dual-pin layout reduces source inductance (LS = 7.5 nH); critical for minimizing voltage overshoot during fast switching. |
| Gate (Pin 3) | Control terminal for channel modulation | High-impedance input requiring <100 nA leakage; sensitive to ESD and requires proper gate resistor (RG = 12 Ω typical) for controlled dV/dt. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 9.6 mΩ typ. enables <4 W conduction loss at 57 A, reducing heatsink size in 48 V battery-powered inverters. |
| 175°C junction rating | Allows sustained operation in automotive engine compartments or industrial motor drives without thermal throttling. |
| Fast switching speed | tr = 62 ns / tf = 38 ns at VDD = 30 V, ID = 34 A - supports >200 kHz PWM in isolated DC-DC converters. |
| Repetitive avalanche capability | Validated up to IAR = 73 A with ∆TJ ≤ 25°C per pulse - improves system reliability in unclamped inductive load transients. |
| Low gate charge asymmetry | Qgd/Qgs ≈ 1.6 - balances Miller effect and turn-on speed, easing gate driver selection for zero-voltage switching topologies. |
Applications
| Motor Drive Half-Bridge | DC-DC Synchronous Buck Converter |
|---|---|
Use Scenario: High-current BLDC motor phase leg in 24–48 V e-bike controllers. IC Role / Device Role / Timing Role: Low-side switch in half-bridge topology; conducts freewheeling current via body diode during high-side off-time. Use Value: 1.3 V VSD and 23 ns trr minimize body-diode conduction loss and reduce dead-time requirements versus discrete diode solutions. |
Use Scenario: 48 V input → 12 V output step-down converter for telecom power shelves. IC Role / Device Role / Timing Role: Synchronous rectifier (low-side FET) operating at 300 kHz with 50% duty cycle. Use Value: 12 mΩ RDS(on) cuts conduction loss by >40% vs. comparable 20 mΩ devices, improving full-load efficiency from 92% to 94.3%. |
| Uninterruptible Power Supply (UPS) Inverter | Industrial Solenoid Driver |
Use Scenario: 60 V bus H-bridge in-line inverter stage delivering 1 kVA AC output. IC Role / Device Role / Timing Role: High-current switching element subjected to repetitive unclamped inductive stress during grid sync transitions. Use Value: 230 mJ EAS and 73 A IAR allow safe operation without snubbers under worst-case line surges or short-circuit events. |
Use Scenario: 24 V solenoid actuation circuit with 5 A peak hold current and 15 A inrush in factory automation valves. IC Role / Device Role / Timing Role: Single-ended switch controlling solenoid coil with fast turn-off to prevent mechanical chatter. Use Value: 38 ns fall time and 175°C rating ensure reliable 100,000-cycle lifetime even with ambient temperatures up to 85°C. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP55NF06L | 60 V, 14 mΩ RDS(on), TO-220 package, no avalanche rating specified | Lacks documented repetitive avalanche capability; higher RDS(on) increases conduction loss by ~17% at 57 A | Preferred only where cost is primary constraint and avalanche stress is absent or externally clamped. |
| IXTP50N065 | 65 V, 11 mΩ RDS(on), TO-220 package, 150°C TJmax, 100 mJ EAS | Lower thermal rating and reduced avalanche margin; requires larger heatsink for same current density | Acceptable for lower-temperature environments but not recommended for sealed or high-reliability motor control. |
Compared with STP55NF06L and IXTP50N065, IRFZ44VZL delivers superior thermal resilience (175°C vs. ≤150°C), verified repetitive avalanche (73 A vs. unspecified or 40 A), and lower gate charge (43–65 nC vs. ≥75 nC), making it optimal for compact, high-reliability 48 V power stages.
Availability
IRFZ44VZL is available at Aetrix Electronics and suitable for motor drive half-bridges, DC-DC synchronous buck converters, and uninterruptible power supply (UPS) inverters requiring stable component supply and long-term industrial lifecycle support.
Supply support for IRFZ44VZL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
The IRFZ44VZL belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in 24–60 V industrial and transportation power systems where thermal robustness and avalanche tolerance are mission-critical.
FAQ
What is the maximum continuous drain current for IRFZ44VZL at 100°C case temperature?
The IRFZ44VZL supports 40 A continuous drain current at TC = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D²PAK package and silicon, and assumes adequate PCB copper area (≥20 cm² 2 oz Cu) for heat spreading. Operation above this current requires active cooling or pulse-width limitation.
Does IRFZ44VZL have a built-in body diode, and what are its key parameters?
Yes, IRFZ44VZL integrates a monolithic N-channel MOSFET body diode with VSD = 1.3 V at IS = 34 A and reverse recovery time trr = 23–35 ns. Its Qrr is 17–26 nC, enabling efficient freewheeling in synchronous rectifiers and half-bridge topologies without external diodes.
Can IRFZ44VZL be used in avalanche mode, and under what conditions is it rated?
IRFZ44VZL is rated for both single-pulse (230 mJ) and repetitive avalanche operation up to IAR = 73 A, provided junction temperature remains ≤175°C. Repetitive use requires adherence to the transient thermal impedance curve (Fig. 11) and pulse width/duty cycle limits shown in Figures 15 and 16 of the datasheet.
What is the gate threshold voltage range, and how does it affect drive circuit design?
VGS(th) is specified from 2.0 V to 4.0 V at ID = 250 µA. This wide range means gate drive must exceed 10 V to ensure full enhancement across process and temperature variation. A 12 V gate drive is recommended to maintain RDS(on) ≤12 mΩ over -55°C to +175°C operation.
IRFZ44VZL Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 57A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 12mOhm @ 34A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 65 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1690 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 92W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-262
IRFZ44VZL FAQ
1.How can I place an order for IRFZ44VZL through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFZ44VZL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFZ44VZL reliable?
The price and inventory of IRFZ44VZL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ44VZL is usually 5 days.
3.What payment methods are accepted for IRFZ44VZL?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ44VZL transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFZ44VZL?
IRFZ44VZL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFZ44VZL order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFZ44VZL?
For technical support, including IRFZ44VZL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ44VZL requirements.
6.How does Aetrix verify that IRFZ44VZL is sourced from the original manufacturer or authorized distributors?
All IRFZ44VZL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ44VZL meets industry standards.
7.What is the process for return or replacement of IRFZ44VZL?
All IRFZ44VZL units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ44VZL, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFZ44VZL part is unused and in its original packaging.
Return procedure for IRFZ44VZL:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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