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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFZ44VZPBF

Name: IRFZ44VZPBF
Brand: Infineon Technologies
SKU: IRFZ44VZPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFZ44VZPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFZ44VZPBF.pdf

Description:: MOSFET N-CH 60V 57A TO220AB

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Product details

Overview

IRFZ44VZPBF from Infineon Technologies is an N-channel enhancement-mode power MOSFET in TO-220AB package, rated for 60 V V_DSS, 12 mΩ R_DS(on) at V_GS = 10 V, and 57 A continuous drain current at T_C = 25°C. It integrates a robust body diode with 1.3 V forward voltage and supports repetitive avalanche operation up to T_J = 175°C, making it suitable for DC-DC converters, motor drives, and power supply synchronous rectification.

For engineers reviewing the IRFZ44VZPBF datasheet, IRFZ44VZPBF pinout, IRFZ44VZPBF application, or IRFZ44VZPBF equivalent, key selection criteria include its low conduction loss (9.6–12 mΩ), fast switching (t_r = 62 ns, t_f = 38 ns), 43 nC total gate charge, 175°C junction rating, and validated unclamped inductive switching capability.

Technical Context

This MOSFET employs advanced HEXFET® silicon processing to minimize on-resistance per die area while maintaining high ruggedness. Its design enables stable operation under repetitive avalanche stress, supported by thermal metrics including R_θJC = 1.64°C/W and validated E_AS = 230 mJ (tested) at T_J = 25°C.

The device features a fast intrinsic switching response (t_d(on) = 14 ns, t_d(off) = 35 ns) and low output capacitance (C_oss = 270 pF typ.), optimized for hard-switched topologies operating up to several hundred kHz. Its body diode exhibits t_rr = 23–35 ns and Q_rr = 17–26 nC, enabling efficient freewheeling in buck and half-bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage before avalanche onset; defines usable input range in 48 V systems.
R_DS(on)	9.6–12 mΩ @ V_GS = 10 V - Directly determines I²R conduction loss; enables <1.5 W loss at 34 A.
I_D (cont)	57 A @ T_C = 25°C - Continuous current handling with heatsink; derates to 40 A at T_C = 100°C.
Q_g	43–65 nC - Gate drive energy requirement; sets minimum driver current (e.g., 2 A peak for 30 ns rise).
E_AS	230 mJ (tested) - Single-pulse avalanche energy capacity; supports unclamped inductive turn-off without failure.
T_J max	175°C - Maximum junction temperature; enables operation in sealed enclosures or high ambient environments.
V_SD	1.3 V @ I_S = 34 A - Body diode forward drop; impacts freewheeling loss and thermal balance in synchronous vs. asynchronous designs.

Pinout & Package

IRFZ44VZPBF uses the TO-220AB package: insulated tab, vertical lead orientation, and standard mounting hole. Thermal resistance is R_θJC = 1.64°C/W with flat greased interface.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path from source to load	Electrically connected to metal tab; requires isolation washer when mounted to heatsink.
Source	Reference node for gate control and current return	Common return for load current and gate drive reference; ties to power ground in low-side switch.
Gate	Control terminal for channel modulation	High-impedance input requiring <65 nC charge; sensitive to ESD; needs series resistor for ringing suppression.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	9.6 mΩ typ. reduces conduction loss by >30% vs. legacy 60 V MOSFETs at same die size.
175°C junction rating	Enables full-rated current in industrial enclosures up to 85°C ambient without derating.
Repetitive avalanche capability	Validated for unlimited cycles below E_AR limit; eliminates need for external clamping in inductive loads.
Fast switching with low C_iss/C_oss	C_iss = 1690 pF, C_oss = 270 pF - minimizes switching loss and improves light-load efficiency in SMPS.
Low gate threshold voltage	V_GS(th) = 2.0–4.0 V - ensures reliable turn-on with 3.3 V or 5 V logic-level drivers.

Applications

DC-DC Synchronous Buck Converter

Brushed DC Motor Drive

Use Scenario: High-efficiency 12–48 V input to 3.3/5/12 V output conversion in telecom and server power supplies.

IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss.

Use Value: Achieves >95% efficiency at 30 A output due to 12 mΩ R_DS(on) and 1.3 V body diode drop during dead-time conduction.

Use Scenario: Full-bridge H-bridge driving 24 V, 10–20 A brushed motors in industrial actuators and robotics.

IC Role / Device Role: High-current quadrant switch with integrated body diode for regenerative braking.

Use Value: Supports 57 A peak current and absorbs 230 mJ avalanche energy during inductive turn-off, eliminating snubbers.

AC-DC PFC Front-End

Uninterruptible Power Supply (UPS) Inverter

Use Scenario: Boost-type active PFC stage in 500–1000 W offline SMPS with universal AC input.

IC Role / Device Role: Fast-switching boost switch handling 6–10 A RMS current at 65–100 kHz.

Use Value: Low Q_g (43 nC) and C_oss (270 pF) enable clean zero-voltage switching transitions and reduced EMI.

Use Scenario: 1 kVA UPS output stage converting 360–400 V DC bus to 230 V AC via full-bridge inverter.

IC Role / Device Role: High-reliability switching element in leg configuration with forced-air cooling.

Use Value: 175°C T_J rating and 1.64°C/W R_θJC allow sustained 40 A operation under overload and thermal stress conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF06L	R_DS(on) = 14 mΩ, V_DSS = 60 V, Q_g = 55 nC, TO-220FP package	Higher R_DS(on) increases conduction loss; lower thermal mass limits pulse current	Preferable where lower gate charge is secondary to cost and footprint compatibility
IXTP50N06T	R_DS(on) = 11 mΩ, V_DSS = 60 V, Q_g = 48 nC, TO-220 package, no insulated tab	Non-insulated tab requires direct heatsink contact; slightly higher Q_g slows switching	Preferred when thermal interface simplification outweighs isolation requirements

Compared with STP55NF06L and IXTP50N06T, IRFZ44VZPBF offers the lowest R_DS(on) among TO-220AB variants and unique insulated-tab construction-critical for designs requiring electrical isolation between drain and heatsink without additional hardware.

Availability

IRFZ44VZPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and uninterruptible power supplies requiring stable component supply and long-term industrial availability.

Supply support for IRFZ44VZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The IRFZ44VZPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-current, high-ruggedness switching in industrial power conversion and motor control applications where reliability under repetitive stress is mandatory.

FAQ

Is IRFZ44VZPBF suitable for logic-level gate drive?

Yes. With V_GS(th) ranging from 2.0 V to 4.0 V and R_DS(on) fully specified at V_GS = 10 V, IRFZ44VZPBF turns on strongly with 5 V microcontroller outputs. However, full 57 A current capability requires ≥10 V gate drive to achieve 12 mΩ R_DS(on); 3.3 V drive yields significantly higher on-resistance and is not recommended for high-current operation.

What is the maximum safe operating frequency for IRFZ44VZPBF in hard-switched circuits?

Based on its 62 ns rise time, 38 ns fall time, and 43 nC gate charge, IRFZ44VZPBF supports hard-switched operation up to 250 kHz in well-designed layouts with low-inductance gate loops. Above this frequency, switching losses dominate, and efficiency drops sharply unless operated in ZVS or ZCS topologies-verified in Figure 8 SOA curves up to 100 kHz continuous and 250 kHz pulsed conditions.

Does IRFZ44VZPBF require a gate resistor, and what value is recommended?

Yes. A series gate resistor (typically 10–22 Ω) is required to dampen parasitic oscillation caused by gate-drain Miller capacitance and PCB inductance. Values below 5 Ω risk ringing and shoot-through in bridge configurations; values above 47 Ω excessively slow switching and increase losses. The optimal value depends on driver strength and layout-validated in application note AN-1001 using 12 Ω with 1 A peak drivers.

Can IRFZ44VZPBF replace IRFZ44N in existing designs?

Yes, with verification. IRFZ44VZPBF is a direct upgrade: identical TO-220AB package, same pinout, improved R_DS(on) (12 mΩ vs. 28 mΩ), higher I_D (57 A vs. 49 A), and enhanced avalanche rating (230 mJ vs. 110 mJ). Thermal design must be rechecked due to higher power density, but no layout or schematic changes are needed for drop-in replacement in most 60 V applications.

IRFZ44VZPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 57A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 12mOhm @ 34A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 65 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1690 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 92W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFZ44VZPBF FAQ

1.How can I place an order for IRFZ44VZPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFZ44VZPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFZ44VZPBF reliable?

The price and inventory of IRFZ44VZPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ44VZPBF is usually 5 days.

3.What payment methods are accepted for IRFZ44VZPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ44VZPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFZ44VZPBF?

IRFZ44VZPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFZ44VZPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFZ44VZPBF?

For technical support, including IRFZ44VZPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ44VZPBF requirements.

6.How does Aetrix verify that IRFZ44VZPBF is sourced from the original manufacturer or authorized distributors?

All IRFZ44VZPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ44VZPBF meets industry standards.

7.What is the process for return or replacement of IRFZ44VZPBF?

All IRFZ44VZPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ44VZPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFZ44VZPBF part is unused and in its original packaging.

Return procedure for IRFZ44VZPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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