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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFZ44VZS

Name: IRFZ44VZS
Brand: Infineon Technologies
SKU: IRFZ44VZS
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFZ44VZS

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFZ44VZS.pdf

Description:: MOSFET N-CH 60V 57A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFZ44VZS from Infineon Technologies is an N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, rated for 60V V_DSS, 12 mΩ R_DS(on) at V_GS = 10 V, and 57 A continuous drain current at T_C = 25°C. It features 175°C maximum junction temperature, fast switching (t_r = 62 ns, t_f = 38 ns), and rated repetitive avalanche energy up to 73 mJ - deployed in DC-DC converters, motor drives, and power supply synchronous rectification.

For engineers reviewing the IRFZ44VZS datasheet, IRFZ44VZS pinout, IRFZ44VZS application, or IRFZ44VZS equivalent, key selection criteria include its low conduction loss (R_DS(on) ≤ 12 mΩ), robust avalanche capability (E_AS = 73 mJ), thermal performance (R_θJC = 1.64 °C/W), and body diode recovery (Q_rr = 17–26 nC, t_rr = 23–35 ns).

Technical Context

This MOSFET employs advanced silicon processing to minimize on-resistance per die area while maintaining high ruggedness. Its gate charge profile (Q_g = 43–65 nC, Q_gd = 18 nC) supports efficient hard-switching in 20–100 kHz power stages, and its low C_iss (1690 pF) and C_oss (270 pF) reduce capacitive losses during transitions.

The integrated body diode exhibits V_SD = 1.3 V at I_S = 34 A and fast reverse recovery (t_rr = 23–35 ns, Q_rr = 17–26 nC), enabling reliable operation in freewheeling and synchronous rectifier roles without external diode supplementation in many mid-power designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage before avalanche; suitable for 48 V bus systems with margin.
R_DS(on)	12 mΩ max @ V_GS = 10 V - Enables <1.5 W conduction loss at 35 A, reducing heatsink requirements.
I_D (continuous)	57 A @ T_C = 25°C - Supports high-current switching in industrial motor drivers and UPS inverters.
E_AS	73 mJ - Rated single-pulse avalanche energy; allows unclamped inductive turn-off without failure under defined conditions.
t_r/t_f	62 ns / 38 ns - Fast edge rates support high-frequency PWM with reduced switching loss in SMPS.
Q_g	43–65 nC - Gate drive energy requirement determines driver sizing and influences switching speed control.
T_J max	175°C - Enables operation in thermally constrained environments such as sealed enclosures or high-ambient industrial settings.

Pinout & Package

IRFZ44VZS is housed in a TO-220AB package with isolated tab (drain-connected), standard lead spacing, and screw-mount compatible outline. Thermal resistance from junction to case is 1.64 °C/W, requiring mechanical mounting with thermal interface material for optimal heat transfer.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Electrically connected to metal tab; must be electrically isolated from heatsink unless system ground reference permits.
Source	Reference node for gate drive and current return	Low-inductance connection critical for stable gate control; internal source inductance LS = 7.5 nH affects switching behavior.
Gate	Control input for channel conduction	High-impedance MOS gate; requires low-impedance driver (RG ≤ 12 Ω typical) to achieve specified t_r/t_f.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	12 mΩ max enables >95% efficiency in 30–50 A DC-DC stages at 12–48 V input.
175°C junction rating	Extends usable lifetime in high-ambient applications (e.g., automotive under-hood, industrial PLCs) without derating.
Repetitive avalanche rated	Validated for repeated unclamped inductive switching up to T_Jmax, eliminating need for external snubbers in many flyback/LLC designs.
Fast body diode recovery	t_rr = 23–35 ns and Q_rr = 17–26 nC reduce shoot-through risk and EMI in synchronous rectification.

Applications

Motor Drive Half-Bridge

DC-DC Synchronous Rectifier

Use Scenario: 24–48 V brushed DC motor control in automated gate operators and conveyor systems.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge topology; handles bidirectional current during PWM commutation and regenerative braking.

Use Value: 12 mΩ R_DS(on) limits I²R loss to <0.5 W at 20 A, enabling compact heatsinking; 175°C rating ensures reliability during stall events.

Use Scenario: Secondary-side synchronous rectification in 48 V input telecom PSUs delivering 50–100 A at 12 V output.

IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diode; driven complementary to primary-side switch with precise dead-time control.

Use Value: Body diode V_SD = 1.3 V and Q_rr = 26 nC enable low forward drop and minimal reverse recovery loss, improving efficiency by ~1.2% over 40 V Schottky.

UPS Inverter Stage

Industrial LED Driver

Use Scenario: 600–1000 VA line-interactive UPS with pure-sine-wave inverter using H-bridge topology.

IC Role / Device Role / Timing Role: High-current switching device in full-bridge output stage; conducts 50+ A peak load current with 50 kHz PWM.

Use Value: 73 mJ E_AS withstands inductive kickback during fault clearing; R_θJC = 1.64 °C/W supports forced-air cooling at 57 A continuous.

Use Scenario: Constant-current LED driver for high-bay lighting (100–200 W), operating from 36–60 V DC bus.

IC Role / Device Role / Timing Role: Primary-side switch in buck-boost or SEPIC regulator controlling LED string current via current-sense feedback loop.

Use Value: Fast t_r/t_f (62/38 ns) minimizes switching loss at 200 kHz operation; low Q_g reduces gate driver power consumption.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF06L	V_DSS = 60 V, R_DS(on) = 14 mΩ, Q_g = 65 nC, TO-220	Higher R_DS(on) increases conduction loss by ~17% at 35 A; identical avalanche rating (75 mJ).	Preferred where gate drive strength is limited and slightly higher on-loss is acceptable.
IXTH50N60L2	V_DSS = 600 V, R_DS(on) = 32 mΩ, TO-247, 175°C	Higher voltage rating sacrifices on-resistance and gate charge efficiency for HV isolation; not drop-in.	Only suitable when system requires >100 V blocking; otherwise over-specified and cost-inefficient.

Compared with STP55NF06L and IXTH50N60L2, IRFZ44VZS delivers the lowest R_DS(on) and best thermal resistance in TO-220 form factor for 48 V systems, making it optimal for space-constrained, high-efficiency mid-power switching where voltage stress remains below 60 V.

Availability

IRFZ44VZS is available at Aetrix Electronics and suitable for motor drives, uninterruptible power supplies, and industrial LED drivers requiring stable component supply across multi-year production cycles.

Supply support for IRFZ44VZS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The IRFZ44VZS belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-current, medium-voltage switching in industrial power conversion and motor control applications.

FAQ

Is IRFZ44VZS RoHS-compliant and lead-free?

Yes, IRFZ44VZS is RoHS-compliant and lead-free, as confirmed by Infineon's official documentation (part number suffix "PbF" denotes lead-free packaging). The device meets JEDEC J-STD-020 moisture sensitivity level MSL-1 and is qualified for reflow soldering up to 260°C peak temperature.

What is the maximum safe operating frequency for IRFZ44VZS in hard-switched topologies?

IRFZ44VZS supports hard-switched operation up to 200 kHz in well-designed layouts with optimized gate drive (RG ≤ 12 Ω) and low-inductance PCB routing. Above 100 kHz, switching losses dominate; thermal design must account for combined conduction + switching loss, especially with 57 A continuous current.

Can IRFZ44VZS replace IRFZ44N in existing designs?

Yes - IRFZ44VZS is a direct upgrade to IRFZ44N, offering identical pinout, improved R_DS(on) (12 mΩ vs. 17.5 mΩ), lower Q_g, and enhanced avalanche ruggedness (73 mJ vs. 65 mJ). No layout or drive circuit changes are required, and efficiency improves by ~0.8% at 30 A in typical 48 V applications.

Does IRFZ44VZS require a gate resistor, and what value is recommended?

Yes, a series gate resistor is required to dampen ringing and control dV/dt. For most 48 V applications, RG = 10–15 Ω provides optimal tradeoff between switching speed (t_r/t_f) and gate oscillation suppression. Lower values (<5 Ω) increase EMI risk; higher values (>22 Ω) degrade t_on/t_off and raise switching loss.

IRFZ44VZS Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 57A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 12mOhm @ 34A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 65 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1690 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 92W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFZ44VZS FAQ

1.How can I place an order for IRFZ44VZS through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFZ44VZS on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFZ44VZS reliable?

The price and inventory of IRFZ44VZS are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ44VZS is usually 5 days.

3.What payment methods are accepted for IRFZ44VZS?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ44VZS transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFZ44VZS?

IRFZ44VZS orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFZ44VZS order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFZ44VZS?

For technical support, including IRFZ44VZS datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ44VZS requirements.

6.How does Aetrix verify that IRFZ44VZS is sourced from the original manufacturer or authorized distributors?

All IRFZ44VZS products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ44VZS meets industry standards.

7.What is the process for return or replacement of IRFZ44VZS?

All IRFZ44VZS units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ44VZS, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFZ44VZS part is unused and in its original packaging.

Return procedure for IRFZ44VZS:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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