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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFZ44VZSPBF

Name: IRFZ44VZSPBF
Brand: Infineon Technologies
SKU: IRFZ44VZSPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFZ44VZSPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFZ44VZSPBF.pdf

Description:: MOSFET N-CH 60V 57A D2PAK

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Product details

Overview

IRFZ44VZSPBF from Infineon Technologies is an N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, rated for 60 V V_DSS, 12 mΩ R_DS(on) at V_GS = 10 V, and 57 A continuous drain current at T_C = 25°C. It features 175°C maximum junction temperature, fast switching (t_r = 62 ns, t_f = 38 ns), and rated repetitive avalanche energy up to 73 mJ - deployed in DC-DC converters, motor drives, and power supply synchronous rectification.

For engineers reviewing the IRFZ44VZSPBF datasheet, IRFZ44VZSPBF pinout, IRFZ44VZSPBF application, or IRFZ44VZSPBF equivalent, key selection criteria include its low conduction loss at high current, body diode recovery performance (t_rr = 23–35 ns, Q_rr = 17–26 nC), thermal robustness under pulsed load, and compatibility with standard gate drivers operating at 10 V.

Technical Context

This MOSFET employs advanced silicon processing to minimize R_DS(on) per die area while maintaining rugged unclamped inductive switching capability. Its gate charge profile (Q_g = 43–65 nC, Q_gd = 18 nC) supports efficient hard-switching in buck and half-bridge topologies up to ~100 kHz.

The integrated body diode exhibits V_SD = 1.3 V at 34 A and controlled reverse recovery (dI_F/dt = 100 A/µs), enabling reliable operation in freewheeling and synchronous rectifier roles without external Schottky supplementation in medium-power applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage before avalanche; suitable for 48 V bus systems with margin.
R_DS(on)	12 mΩ max @ V_GS = 10 V, T_J = 25°C - Enables <1.5 W conduction loss at 34 A DC.
I_D (cont)	57 A @ T_C = 25°C - Requires heatsink for sustained >20 A operation due to R_θJC = 1.64 °C/W.
Q_g	43–65 nC - Determines gate drive power and switching loss; compatible with 1–2 A peak gate drivers.
t_r/t_f	62 ns / 38 ns - Supports clean edge control in PWM frequencies up to 100 kHz with minimal overlap loss.
E_AS	73 mJ (tested) - Allows safe single-pulse inductive turn-off without snubber in ≤100 µs events.
V_GS(th)	2.0–4.0 V - Ensures full enhancement with standard 5 V logic-level gate drivers when used with appropriate margin.

Pinout & Package

IRFZ44VZSPBF is housed in a through-hole TO-220AB package with isolated tab (non-conductive mounting surface). The case serves as the Drain terminal, enabling direct heatsinking without electrical isolation hardware.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output	Electrically connected to metal tab; must be insulated from chassis unless system ground reference permits.
Source	Current return path & reference node	Common node for gate drive return and load current return; defines local ground for driver circuitry.
Gate	Control input	High-impedance MOS gate requiring low-inductance routing and RC snubbing to suppress ringing during fast transitions.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	12 mΩ enables <1.5 W conduction loss at 34 A, reducing thermal burden in compact power stages.
175°C T_J(max)	Supports operation in high-ambient environments (e.g., enclosed industrial enclosures) without derating below 100°C ambient.
Repetitive avalanche rating	Rated for repeated unclamped inductive switching up to T_Jmax, eliminating need for external clamping in many motor-drive flyback scenarios.
Fast body diode	t_rr = 23–35 ns and Q_rr = 17–26 nC reduce switching loss and EMI in synchronous rectifier and H-bridge freewheeling modes.
Lead-free construction	Complies with RoHS Directive 2011/65/EU; Pb-free plating on leads and solderable tab surface.

Applications

DC-DC Buck Converter

Brushed DC Motor Driver

Use Scenario: 48 V input to 12 V/20 A output step-down converter in telecom power shelf.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch with 100 kHz PWM, driven by dedicated gate driver IC.

Use Value: Low R_DS(on) reduces conduction loss by 35% vs. legacy 20 mΩ MOSFETs, improving full-load efficiency from 92% to 94.2%.

Use Scenario: Full-bridge H-bridge controlling 24 V, 15 A brushed motor in automated gate actuator.

IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current with body diode freewheeling during PWM off-time.

Use Value: Fast t_rr and low Q_rr limit voltage overshoot to <75 V during commutation, avoiding overvoltage stress on bus capacitors.

UPS Inverter Stage

Industrial LED Driver

Use Scenario: Half-bridge inverter converting 350 V DC bus to 230 V AC output in line-interactive UPS.

IC Role / Device Role / Timing Role: Low-side switch in 50 kHz SPWM stage, paired with IGBT high-side; body diode conducts reactive current.

Use Value: Rated E_AS of 73 mJ absorbs inductive kickback during zero-crossing transitions without snubber, simplifying board layout.

Use Scenario: Constant-current buck controller driving 12 V, 3 A LED string in streetlight fixture with ambient up to 85°C.

IC Role / Device Role / Timing Role: Primary switching FET modulating LED current via 1 kHz PWM dimming signal.

Use Value: 175°C T_J(max) allows operation at 115°C case temperature with 1.64 °C/W heatsink, eliminating need for forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF06L	R_DS(on) = 14 mΩ, V_DSS = 60 V, Q_g = 65 nC, TO-220FP package (isolated tab)	Higher gate charge increases switching loss at >50 kHz; lower thermal resistance (R_θJC = 1.25 °C/W) improves heat transfer.	Preferred where thermal interface is constrained but gate drive strength is sufficient for higher Q_g.
IXTH50N60L2	V_DSS = 600 V, R_DS(on) = 0.12 Ω, TO-247 package, higher voltage class	Not interchangeable - designed for 400 V+ DC link applications; unsuitable for 48 V systems due to excessive R_DS(on) and cost.	Only applicable if system requires 600 V blocking; not a functional substitute for IRFZ44VZSPBF in low-voltage power stages.

Compared with STP55NF06L, IRFZ44VZSPBF offers lower Q_g and faster switching for high-frequency designs, while IXTH50N60L2 belongs to a different voltage class entirely and introduces unnecessary conduction loss and cost in 48 V applications.

Availability

IRFZ44VZSPBF is available at Aetrix Electronics and suitable for DC-DC converters, brushed motor drivers, UPS inverters, and industrial LED drivers requiring stable component supply and long-term manufacturing continuity.

Supply support for IRFZ44VZSPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

The IRFZ44VZSPBF belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-efficiency, thermally robust switching in medium-power industrial and consumer power conversion systems.

FAQ

Is IRFZ44VZSPBF suitable for logic-level gate drive?

No - its V_GS(th) range is 2.0–4.0 V, but full enhancement to R_DS(on) = 12 mΩ requires V_GS ≥ 10 V. Logic-level drivers (3.3 V or 5 V) will result in significantly higher on-resistance (>50 mΩ), excessive heating, and potential thermal runaway. A dedicated 10–12 V gate driver is mandatory.

What is the maximum continuous current at 100°C case temperature?

Per datasheet Figure 9, the continuous drain current drops to 40 A at T_C = 100°C. This derating reflects thermal limits imposed by R_θJC = 1.64 °C/W and junction-to-case power dissipation; operation above this current requires active cooling or reduced duty cycle.

Does IRFZ44VZSPBF have avalanche energy rating for repetitive operation?

Yes - the datasheet specifies "Repetitive Avalanche Allowed up to T_jmax" and provides curves (Figures 15–16) for allowable avalanche current and energy versus pulse width and starting junction temperature. Safe repetitive operation requires ensuring ∆T_j from avalanche pulses does not exceed 175°C.

Can the TO-220AB package be mounted directly to a grounded heatsink?

No - the metal tab is electrically connected to the Drain terminal. Mounting to a grounded heatsink creates a short between Drain and system ground unless an insulating pad (e.g., mica or silicone film) and shoulder washer are used. Isolated mounting hardware is required for non-floating Drain configurations.

IRFZ44VZSPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 57A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 12mOhm @ 34A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 65 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1690 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 92W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFZ44VZSPBF FAQ

1.How can I place an order for IRFZ44VZSPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFZ44VZSPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFZ44VZSPBF reliable?

The price and inventory of IRFZ44VZSPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ44VZSPBF is usually 5 days.

3.What payment methods are accepted for IRFZ44VZSPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ44VZSPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFZ44VZSPBF?

IRFZ44VZSPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFZ44VZSPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFZ44VZSPBF?

For technical support, including IRFZ44VZSPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ44VZSPBF requirements.

6.How does Aetrix verify that IRFZ44VZSPBF is sourced from the original manufacturer or authorized distributors?

All IRFZ44VZSPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ44VZSPBF meets industry standards.

7.What is the process for return or replacement of IRFZ44VZSPBF?

All IRFZ44VZSPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ44VZSPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFZ44VZSPBF part is unused and in its original packaging.

Return procedure for IRFZ44VZSPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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