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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFZ44VZSTRRPBF

Name: IRFZ44VZSTRRPBF
Brand: Infineon Technologies
SKU: IRFZ44VZSTRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFZ44VZSTRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFZ44VZSTRRPBF.pdf

Description:: MOSFET N-CH 60V 57A D2PAK

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Product details

Overview

IRFZ44VZSTRRPBF from Infineon Technologies is an N-channel enhancement-mode HEXFET® Power MOSFET in D2PAK (TO-263) package, rated for 60 V V_DSS, 12 mΩ R_DS(on) at V_GS = 10 V, and 57 A continuous drain current at T_C = 25°C. It integrates a robust body diode with 1.3 V forward voltage and supports unclamped inductive switching up to 230 mJ single-pulse avalanche energy. Used in DC-DC converters, motor drives, and power supplies where high-current switching and thermal reliability are critical.

For engineers reviewing the IRFZ44VZSTRRPBF datasheet, IRFZ44VZSTRRPBF pinout, IRFZ44VZSTRRPBF application, or IRFZ44VZSTRRPBF equivalent, key selection criteria include its 175°C maximum junction temperature, fast switching (t_d(on) = 14 ns, t_f = 38 ns), low gate charge (Q_g = 43–65 nC), and validated repetitive avalanche capability under controlled thermal conditions.

Technical Context

This MOSFET employs advanced silicon processing to minimize on-resistance per die area while maintaining ruggedness against transient overloads. Its design includes optimized gate oxide integrity for stable threshold voltage (V_GS(th) = 2.0–4.0 V) and low Miller charge (Q_gd = 18 nC), enabling efficient high-frequency hard-switching operation up to several hundred kHz.

The integrated body diode exhibits 23–35 ns reverse recovery time (t_rr) and 17–26 nC reverse recovery charge (Q_rr) at I_F = 34 A, supporting synchronous rectification and freewheeling in buck and half-bridge topologies without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage before avalanche onset; defines safe operating range in 48 V bus systems.
R_DS(on)	12 mΩ max @ V_GS = 10 V, T_J = 25°C - Enables <1.5 W conduction loss at 35 A, critical for thermal management in compact PCB layouts.
I_D (continuous)	57 A @ T_C = 25°C - Supports high-current output stages in industrial SMPS and motor gate drivers without parallel devices.
Q_g	43–65 nC - Determines gate drive power requirement; enables use with standard 1–2 A peak gate drivers at ≤500 kHz switching.
E_AS	230 mJ (tested) - Quantifies single-pulse avalanche robustness; allows reliable operation during load dump or short-circuit transients.
T_J(max)	175°C - Permits sustained operation in high-ambient environments (e.g., enclosed industrial enclosures) with conservative derating.
t_r/t_f	62 ns / 38 ns - Fast edge rates reduce switching losses and EMI generation in high-efficiency converter designs.

Pinout & Package

IRFZ44VZSTRRPBF uses the surface-mount D2PAK (TO-263) package with exposed drain pad for enhanced thermal dissipation. The package measures 10.67 mm × 9.65 mm × 4.83 mm and features gull-wing leads compatible with standard reflow profiles.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects directly to PCB ground plane for minimal loop inductance in high-di/dt applications.
Pin 2 (Gate)	Control input (G)	High-impedance MOS gate requiring <200 nA leakage current; sensitive to ESD and layout-induced ringing.
Pin 3 (Drain)	Power output (D)	Exposed metal tab tied internally to drain; must be soldered to large copper pour for R_θJC = 1.64°C/W thermal path.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	12 mΩ max enables >95% efficiency in 48 V/30 A DC-DC stages with minimal heatsinking.
175°C junction rating	Allows full-rated current delivery in ambient temperatures up to 85°C with proper board-level thermal design.
Repetitive avalanche capability	Validated for repeated unclamped inductive switching up to T_Jmax, eliminating need for external snubbers in relay/motor drive circuits.
Fast body diode	23–35 ns t_rr and low Q_rr support synchronous rectification in buck converters without shoot-through risk.
Low gate charge	43–65 nC Q_g reduces driver IC stress and gate drive losses, extending lifetime of discrete gate drivers.

Applications

DC-DC Converters

Motor Drive Half-Bridge

Use Scenario: High-current step-down conversion in telecom power shelves and server VRMs.

IC Role / Device Role / Timing Role: Primary low-side switch in synchronous buck topology operating at 200–500 kHz.

Use Value: 12 mΩ R_DS(on) limits conduction loss to <1.3 W at 35 A, reducing thermal footprint by 40% vs. legacy 20 mΩ parts.

Use Scenario: Driving brushed DC motors in industrial automation actuators.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge configuration with PWM frequency ≤20 kHz.

Use Value: 230 mJ E_AS withstands back-EMF spikes during abrupt motor stop, eliminating external clamping diodes.

UPS Inverter Stages

LED Constant-Current Drivers

Use Scenario: Battery-fed 120/230 VAC inverters for backup power systems.

IC Role / Device Role / Timing Role: Output stage switch in full-bridge topology with 50/60 Hz fundamental + high-frequency PWM.

Use Value: 175°C T_J(max) ensures reliability during extended overload conditions without thermal shutdown.

Use Scenario: High-power LED string control in architectural lighting fixtures.

IC Role / Device Role / Timing Role: Constant-current regulator switch in buck-derived current-source topology.

Use Value: Fast t_f = 38 ns minimizes switching transition time, reducing audible noise and EMI in dimmable LED systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60NF06	60 V V_DSS, 14 mΩ R_DS(on), TO-220 package, no avalanche rating specified	Lacks documented repetitive avalanche capability; requires external protection in inductive loads	Prefer when cost sensitivity outweighs ruggedness requirements and through-hole assembly is mandated
IXTP50N065	65 V V_DSS, 10.5 mΩ R_DS(on), TO-220 package, 150°C T_J(max)	Lower max junction temperature limits sustained high-current operation in thermally constrained enclosures	Choose when lower on-resistance is prioritized and thermal margin can be managed via heatsink augmentation

Compared with STP60NF06 and IXTP50N065, IRFZ44VZSTRRPBF uniquely combines D2PAK thermal performance, 175°C operation, and verified repetitive avalanche-making it optimal for space-constrained, high-reliability industrial power stages where failure modes must be tightly bounded.

Availability

IRFZ44VZSTRRPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drive half-bridges, and UPS inverter stages requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFZ44VZSTRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial power conversion, motor control, and renewable energy systems.

FAQ

What is the maximum allowable gate-to-source voltage for IRFZ44VZSTRRPBF?

The absolute maximum V_GS rating is ±20 V. Operation beyond this risks irreversible gate oxide breakdown. Recommended gate drive is 10–15 V for full enhancement with margin; gate resistors should limit dV/dt to avoid parasitic turn-on during high-speed switching.

Can IRFZ44VZSTRRPBF be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (normalized resistance increases with junction temperature) enables inherent current sharing. Layout symmetry, matched gate drive paths, and individual source resistors are required to ensure balanced dynamic current distribution across paralleled units.

Is the body diode suitable for continuous freewheeling operation?

Yes-the integrated body diode is rated for 57 A continuous source current and 230 A pulsed current. Its 1.3 V forward drop and 23–35 ns t_rr support reliable freewheeling in hard-switched topologies, though synchronous rectification with external Schottky diodes may improve efficiency above 100 kHz.

What thermal interface material is recommended for the D2PAK drain pad?

A 0.1 mm thick thermal interface pad (e.g., Laird T-flex 400 series) or solder paste (Sn96.5/Ag3.0/Cu0.5) is recommended to achieve the specified R_θJC = 1.64°C/W. Mechanical mounting torque must not exceed 1.1 N·m to avoid die cracking or solder joint fracture.

IRFZ44VZSTRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 57A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 12mOhm @ 34A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 65 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1690 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 92W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFZ44VZSTRRPBF FAQ

1.How can I place an order for IRFZ44VZSTRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFZ44VZSTRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFZ44VZSTRRPBF reliable?

The price and inventory of IRFZ44VZSTRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ44VZSTRRPBF is usually 5 days.

3.What payment methods are accepted for IRFZ44VZSTRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ44VZSTRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFZ44VZSTRRPBF?

IRFZ44VZSTRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFZ44VZSTRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFZ44VZSTRRPBF?

For technical support, including IRFZ44VZSTRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ44VZSTRRPBF requirements.

6.How does Aetrix verify that IRFZ44VZSTRRPBF is sourced from the original manufacturer or authorized distributors?

All IRFZ44VZSTRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ44VZSTRRPBF meets industry standards.

7.What is the process for return or replacement of IRFZ44VZSTRRPBF?

All IRFZ44VZSTRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ44VZSTRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFZ44VZSTRRPBF part is unused and in its original packaging.

Return procedure for IRFZ44VZSTRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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