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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFZ44Z

Name: IRFZ44Z
Brand: Infineon Technologies
SKU: IRFZ44Z
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFZ44Z

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFZ44Z.pdf

Description:: MOSFET N-CH 55V 51A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFZ44Z from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET® Power MOSFET designed for high-efficiency switching in DC-DC converters, motor drives, and power supplies. It delivers 51A continuous drain current at 25°C, 13.9mΩ R_DS(on) at V_GS = 10V, 55V V_DSS, and supports repetitive avalanche up to T_Jmax = 175°C - enabling robust operation in hard-switched industrial inverters.

For engineers reviewing the IRFZ44Z datasheet, IRFZ44Z pinout, IRFZ44Z application, or IRFZ44Z equivalent, key selection criteria include its low conduction loss, fast 68ns rise time, 105mJ single-pulse avalanche energy rating, TO-220AB package thermal performance (R_θJC = 1.87°C/W), and body diode recovery time of 23ns - all critical for synchronous rectification and unclamped inductive load handling.

Technical Context

This MOSFET employs advanced silicon processing to minimize on-resistance per die area while maintaining ruggedness against voltage transients. Its gate charge profile (Q_g = 29–43nC, Q_gd = 12–18nC) enables efficient drive with standard gate drivers, and the 130pF Crss ensures manageable Miller effect during high-dv/dt switching.

The integrated body diode exhibits V_SD = 1.2V at 31A and t_rr = 23–35ns, supporting moderate-frequency freewheeling in half-bridge topologies. Thermal design is anchored by a validated junction-to-case resistance of 1.87°C/W and linear derating above 25°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55V - Maximum blocking voltage before avalanche onset; sets upper limit for bus voltage in 48V systems.
R_DS(on)	13.9mΩ @ V_GS = 10V - Determines I²R conduction loss; yields ≤2.8W loss at 30A DC.
I_D (25°C)	51A - Continuous drain current capability with heatsink; defines maximum steady-state load handling.
Q_g	43nC max - Total gate charge required for full turn-on; determines driver current demand and switching loss.
t_r/t_f	68ns/41ns - Rise/fall times at V_DD = 25V, I_D = 31A; constrains minimum practical switching frequency.
E_AS	86mJ - Single-pulse avalanche energy rating; quantifies safe inductive energy absorption without failure.
t_rr	23ns typical - Body diode reverse recovery time; limits usable frequency in non-synchronous rectification.

Pinout & Package

IRFZ44Z is housed in a TO-220AB package with isolated tab (drain-connected), offering mechanical stability and direct heatsink mounting. The three-terminal configuration supports high-current PCB layouts with minimal parasitic inductance.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal, electrically connected to metal tab	Must be electrically isolated from heatsink unless system ground reference permits; primary path for load current and heat dissipation.
Source	Reference node for gate drive and current return path	Serves as common return for gate driver supply and sense point for current monitoring; low-inductance layout essential.
Gate	Control input for channel modulation	High-impedance MOS control node; requires <10Ω series resistance to damp ringing and prevent oscillation during fast edges.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	13.9mΩ enables ≥95% efficiency in 12–48V buck converters at 20–30A output.
Repetitive avalanche rated	Rated for repeated unclamped inductive switching up to T_J = 175°C - eliminates need for external snubbers in relay/motor drive circuits.
175°C operating junction temperature	Allows full-rated current operation in sealed enclosures or high-ambient environments without derating.
Fast switching with low Q_gd/Q_g ratio	Q_gd = 12–18nC / Q_g = 43nC ≈ 0.42 - reduces Miller plateau duration and improves controllability at high dv/dt.

Applications

DC-DC Buck Converter

Brushed DC Motor Drive

Use Scenario: High-current step-down conversion in telecom power shelves and server VRMs.

IC Role / Device Role / Timing Role: Primary high-side switch in synchronous buck topology, switching at 200–500kHz.

Use Value: 13.9mΩ R_DS(on) minimizes conduction loss at 40A load; 68ns t_r supports stable 300kHz operation with <5% duty-cycle distortion.

Use Scenario: H-bridge control of 24V/30A brushed motors in industrial actuators.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge leg, commutated at ≤20kHz with PWM.

Use Value: 175°C T_Jmax and 86mJ E_AS tolerate back-EMF spikes during abrupt direction reversal without clamping diodes.

Uninterruptible Power Supply (UPS)

LED Constant-Current Driver

Use Scenario: Battery-to-AC inverter stage in line-interactive UPS systems.

IC Role / Device Role / Timing Role: Output switching device in full-bridge inverter, operating in 50/60Hz square-wave or modified sine-wave mode.

Use Value: Robust 55V V_DSS and 51A I_D support 48V battery input with margin; TO-220AB package enables direct heatsink mounting in compact chassis.

Use Scenario: Dimmable constant-current LED driver for architectural lighting (10–50W).

IC Role / Device Role / Timing Role: PWM-controlled pass element in linear+switching hybrid topology.

Use Value: Fast 23ns t_rr and low Q_rr = 17–26nC reduce switching losses during 1–10kHz dimming, improving thermal stability vs. slower MOSFETs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF06L	R_DS(on) = 14mΩ @ 10V, V_DSS = 60V, Q_g = 55nC - higher gate charge increases driver loss.	Higher V_DSS suits 60V bus designs but slower switching (t_r = 100ns) limits high-frequency use.	Prefer when 60V margin is mandatory and switching frequency ≤100kHz.
IXTH50N10L2	R_DS(on) = 12.5mΩ @ 10V, V_DSS = 100V, TO-247 package - lower R_DS(on) but larger footprint and higher cost.	Superior voltage rating and thermal R_θJC = 0.6°C/W enable higher-power density, but over-spec for 48V systems.	Choose only if upgrading to 100V systems or requiring >70A peak current capability.

Compared with STP55NF06L and IXTH50N10L2, IRFZ44Z offers optimal balance of low gate charge (43nC), proven 55V ruggedness, and TO-220AB manufacturability - making it preferred for cost-sensitive, medium-power 48V applications where switching speed and thermal simplicity are prioritized over ultra-low R_DS(on) or extended voltage headroom.

Availability

IRFZ44Z is available at Aetrix Electronics and suitable for DC-DC converters, brushed motor drives, uninterruptible power supplies, and LED constant-current drivers requiring stable component supply across industrial production cycles.

Supply support for IRFZ44Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control solutions, with core expertise in silicon-based power devices.

The IRFZ44Z belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered specifically for high-current, medium-voltage switching applications demanding reliability, thermal resilience, and ease of drive in industrial and consumer power systems.

FAQ

Is IRFZ44Z suitable for synchronous rectification?

No - IRFZ44Z lacks a specified reverse recovery time for synchronous FET operation and its body diode t_rr (23–35ns) is not optimized for zero-voltage switching. It is intended for unidirectional high-side or low-side switching, not bidirectional current conduction. For synchronous rectification, dedicated logic-level or trench-MOSFETs with documented Q_rr and t_rr specs are required.

What is the maximum recommended gate drive voltage for IRFZ44Z?

The absolute maximum V_GS is ±20V, but the device is fully enhanced at V_GS = 10V and characterized for reliable operation between 5V and 15V. Driving above 15V provides negligible R_DS(on) improvement while increasing gate oxide stress risk; 10V is the industry-standard drive level for optimal trade-off between on-resistance and long-term reliability.

Can IRFZ44Z replace IRFZ44N in existing designs?

Yes - IRFZ44Z is a direct replacement for IRFZ44N with identical pinout, package, and electrical specifications (V_DSS, R_DS(on), I_D, Q_g). The "Z" suffix denotes enhanced repetitive avalanche rating and tighter parameter distribution per production lot, offering improved robustness in inductive switching without layout or drive changes.

Does IRFZ44Z require a heatsink in 30A continuous operation?

Yes - at 30A and 13.9mΩ, conduction loss is ~12.5W. With R_θJC = 1.87°C/W and ambient at 50°C, junction temperature exceeds 175°C without heatsinking. A 1.5°C/W heatsink (with thermal interface) keeps T_J ≤135°C, well within rating. TO-220AB mounting torque must be 10 lbf·in (1.1N·m) for optimal thermal contact.

IRFZ44Z Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 51A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 13.9mOhm @ 31A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 43 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1420 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 80W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFZ44Z FAQ

1.How can I place an order for IRFZ44Z through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFZ44Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFZ44Z reliable?

The price and inventory of IRFZ44Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ44Z is usually 5 days.

3.What payment methods are accepted for IRFZ44Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ44Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFZ44Z?

IRFZ44Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFZ44Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFZ44Z?

For technical support, including IRFZ44Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ44Z requirements.

6.How does Aetrix verify that IRFZ44Z is sourced from the original manufacturer or authorized distributors?

All IRFZ44Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ44Z meets industry standards.

7.What is the process for return or replacement of IRFZ44Z?

All IRFZ44Z units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ44Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFZ44Z part is unused and in its original packaging.

Return procedure for IRFZ44Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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