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Infineon Technologies IRFZ44ZL

Part No.:
IRFZ44ZL
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-262-3 Long Leads, I2PAK, TO-262AA
Datasheet:
AetrixIRFZ44ZL.pdf
Description:
MOSFET N-CH 55V 51A TO262
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,993

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Product details

Overview

IRFZ44ZL from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET® Power MOSFET in TO-262 (I²PAK) package, designed for high-current DC-DC conversion, motor control, and power switching. It delivers 51A continuous drain current at 25°C, 13.9mΩ RDS(on) at VGS = 10V, 55V VDSS, and supports repetitive avalanche up to Tjmax = 175°C - enabling robust operation in automotive body electronics and industrial SMPS.

For engineers reviewing the IRFZ44ZL datasheet, IRFZ44ZL pinout, IRFZ44ZL application, or IRFZ44ZL equivalent, key selection criteria include its low conduction loss (11.1–13.9mΩ), fast switching (tr = 68ns, tf = 41ns), integrated body diode with 23–35ns reverse recovery time, and thermal performance (RθJC = 1.87°C/W).

Technical Context

This device uses advanced silicon process technology to minimize on-resistance per die area while maintaining high avalanche ruggedness. Its gate threshold voltage (2.0–4.0V) enables direct drive from 3.3V/5V logic with margin, and the 29–43nC total gate charge balances switching speed and driver capability requirements.

The MOSFET integrates a monolithic body diode rated for 51A continuous source current and 200A pulsed current, with VSD ≤ 1.2V at 31A. Its dynamic parameters - including Ciss = 1420pF, Coss = 240pF, and Crss = 130pF - support stable hard-switching operation up to several hundred kHz in buck and half-bridge topologies.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 55V - maximum blocking voltage before avalanche; suitable for 48V bus systems with margin.
RDS(on) 13.9mΩ max @ VGS = 10V, Tj = 25°C - ensures <1.4W conduction loss at 51A, reducing heatsink size.
ID (continuous) 51A @ TC = 25°C - supports high-power loads without parallel devices in PCB-mount applications.
Qg 43nC max - defines gate drive energy; compatible with standard MOSFET drivers (e.g., IR2110, UCC27531).
tr/tf 68ns / 41ns - enables efficient 200–500kHz switching in synchronous rectifiers and motor gate drives.
EAS 86mJ single-pulse - allows unclamped inductive turn-off without external snubbers in relay or solenoid drivers.
RθJC 1.87°C/W - enables >40W dissipation with modest heatsinking; critical for thermally constrained enclosures.

Pinout & Package

IRFZ44ZL is housed in a TO-262 (I²PAK) surface-mount-compatible package with isolated tab (drain-connected). The three-terminal configuration supports high-current PCB mounting with low-inductance source return paths.

Pin/Terminal Circuit Role Design Meaning
Drain (Tab) Main current sink terminal Electrically connected to metal tab; requires insulated mounting or heatsink isolation for floating applications.
Source Current return path & reference node Low-inductance connection point for gate driver return and current sensing; internal bond-wire inductance LS = 7.5nH.
Gate Control input High-impedance MOS gate requiring <43nC charge; sensitive to ESD; must be driven with controlled slew rate to limit dv/dt-induced shoot-through.

Key Features

Feature Design Value
Ultra-low RDS(on) 13.9mΩ max enables >97% efficiency in 48V/30A DC-DC stages at 100kHz.
Repetitive avalanche rating Rated for unlimited repetitive avalanche events as long as Tj ≤ 175°C - eliminates need for external clamping in inductive load switching.
175°C operating junction temperature Supports under-hood automotive use and sealed industrial enclosures without derating at ambient up to 105°C.
Fast body diode trr = 23–35ns, Qrr = 17–26nC - reduces switching losses and EMI in synchronous rectification and freewheeling paths.
Lead-free construction RoHS-compliant Pb-free plating and solderable terminations meet IPC-J-STD-020 reflow profiles.

Applications

Automotive Body Control Module (BCM) Industrial DC Motor Driver

Use Scenario: Switching 12V/24V loads such as headlights, fans, and window lifters in centralized BCMs.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling load current up to 40A with PWM dimming/frequency modulation.

Use Value: Low RDS(on) minimizes heat generation in space-constrained modules; 175°C rating ensures reliability across vehicle life cycles.

Use Scenario: H-bridge leg in 24–48V brushed DC motor controllers for conveyor systems and pumps.

IC Role / Device Role / Timing Role: Synchronous rectifier and freewheeling switch handling bidirectional current up to 51A peak.

Use Value: Fast body diode (trr ≤ 35ns) and low Qrr reduce cross-conduction losses and improve thermal stability during PWM commutation.

Server PSU Secondary-Side Sync Rectifier UPS Inverter Half-Bridge

Use Scenario: Replacing Schottky diodes in 12V output rails of telecom/server PSUs operating at 300–500kHz.

IC Role / Device Role / Timing Role: Synchronous rectifier driven by controller IC with precise timing to avoid shoot-through.

Use Value: 13.9mΩ RDS(on) cuts conduction loss by >60% vs. 40V Schottky, improving full-load efficiency by 0.8–1.2%.

Use Scenario: Low-side switch in 48V–100V UPS inverter half-bridges delivering 1–3kVA output.

IC Role / Device Role / Timing Role: Hard-switched power stage element handling repetitive inductive turn-off stress.

Use Value: 86mJ EAS and validated repetitive avalanche performance eliminate need for active clamps, simplifying gate drive design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP55NF06L RDS(on) = 14mΩ @ 10V, VDSS = 60V, Qg = 55nC - higher gate charge increases driver loss. Better 60V margin but slower switching (tr = 100ns); less optimal for >300kHz designs. Prefer when 60V blocking headroom is mandatory and switching frequency <150kHz.
IXTH50N10L2 RDS(on) = 12.5mΩ @ 10V, VDSS = 100V, TO-247 package - larger footprint, higher cost. Higher voltage rating suits 72V battery systems; TO-247 offers better thermal spread but requires more board area. Choose only if system requires >60V rating or needs >60W continuous dissipation capability.

Compared with STP55NF06L and IXTH50N10L2, IRFZ44ZL provides the best balance of low gate charge, compact TO-262 packaging, and proven 55V/51A performance for cost-sensitive 48V industrial and automotive power stages.

Availability

IRFZ44ZL is available at Aetrix Electronics and suitable for automotive body control modules, industrial DC motor drivers, server secondary-side synchronous rectifiers, and UPS inverter half-bridges requiring stable component supply and long-term lifecycle support.

Supply support for IRFZ44ZL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon and wide-bandgap power devices.

IRFZ44ZL belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in automotive, industrial, and computing power systems where ruggedness and thermal stability are critical.

FAQ

Is IRFZ44ZL pin-compatible with IRFZ44N?

No - IRFZ44ZL uses TO-262 (I²PAK) packaging with drain-connected tab, while IRFZ44N uses TO-220AB with isolated tab. Pin numbering differs: IRFZ44ZL has Drain-Source-Gate (tab-S-G), whereas IRFZ44N is Drain-Gate-Source (tab-G-S). Mechanical and thermal mounting requirements are not interchangeable.

What is the maximum recommended gate drive voltage for IRFZ44ZL?

The absolute maximum VGS is ±20V, but reliable operation is ensured at 10V - the voltage used for RDS(on) and Qg specifications. Driving above 15V yields diminishing RDS(on) improvement while increasing gate oxide stress and risk of overvoltage failure during transients.

Can IRFZ44ZL be used in parallel configurations?

Yes - its positive temperature coefficient of RDS(on) (see Fig. 10) enables inherent current sharing. Successful parallel operation requires matched layout: identical trace lengths, symmetric gate drive routing, and shared source inductance minimization. Derate total current by 15% for thermal margin in multi-device arrays.

Does IRFZ44ZL require a gate resistor for safe operation?

Yes - a series gate resistor (typically 5–22Ω) is required to dampen ringing, limit peak gate current, and control dv/dt during switching. Without it, parasitic oscillation can cause false turn-on, increased EMI, and localized gate oxide overstress - especially with high-speed drivers or long gate traces.

IRFZ44ZL Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
51A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
13.9mOhm @ 31A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
43 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1420 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
80W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-262

IRFZ44ZL FAQ

1.How can I place an order for IRFZ44ZL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFZ44ZL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFZ44ZL reliable?

The price and inventory of IRFZ44ZL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ44ZL is usually 5 days.

3.What payment methods are accepted for IRFZ44ZL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ44ZL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFZ44ZL?

IRFZ44ZL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFZ44ZL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFZ44ZL?

For technical support, including IRFZ44ZL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ44ZL requirements.

6.How does Aetrix verify that IRFZ44ZL is sourced from the original manufacturer or authorized distributors?

All IRFZ44ZL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ44ZL meets industry standards.

7.What is the process for return or replacement of IRFZ44ZL?

All IRFZ44ZL units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ44ZL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFZ44ZL part is unused and in its original packaging.

Return procedure for IRFZ44ZL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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