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Infineon Technologies IRFZ44ZSPBF
- Part No.:
- IRFZ44ZSPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRFZ44ZSPBF.pdf
- Description:
- MOSFET N-CH 55V 51A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:4,081
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Product details
Overview
IRFZ44ZSPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET® Power MOSFET in D2PAK (TO-263) package, rated for 55 V VDSS, 13.9 mΩ RDS(on) at VGS = 10 V, and 51 A continuous drain current at TC = 25°C. It features 175°C maximum junction temperature, fast switching (tr = 68 ns, tf = 41 ns), and fully rated repetitive avalanche capability up to Tjmax. It is widely deployed in DC-DC converters, motor drives, and power supply synchronous rectification stages.
For engineers reviewing the IRFZ44ZSPBF datasheet, IRFZ44ZSPBF pinout, IRFZ44ZSPBF application, or IRFZ44ZSPBF equivalent, key selection criteria include its low RDS(on) at 10 V gate drive, robust body diode (VSD ≤ 1.2 V, Qrr = 17–26 nC), thermal performance (RθJC = 1.87°C/W), and D2PAK footprint compatibility with high-current PCB layouts.
Technical Context
This MOSFET employs advanced planar silicon processing to minimize conduction loss while maintaining rugged unclamped inductive switching behavior. Its gate charge profile (Qg = 29–43 nC, Qgd = 12–18 nC) supports efficient 10 V gate drive in hard-switched topologies, and its Coss(eff) = 300 pF enables predictable turn-off energy calculation in flyback and LLC resonant designs.
The device integrates a monolithic body diode with low reverse recovery charge (Qrr = 17–26 nC) and fast trr = 23–35 ns, enabling reliable operation in freewheeling and synchronous rectification roles without external Schottky supplementation in medium-frequency (<500 kHz) applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 55 V - Maximum blocking voltage before avalanche onset; sets upper limit for bus voltage in buck, half-bridge, and motor phase-leg designs. |
| RDS(on) | 13.9 mΩ @ VGS = 10 V - Conduction loss of ~0.36 W at 51 A; determines I²R heating and efficiency in continuous conduction mode. |
| ID (continuous) | 51 A @ TC = 25°C - Sustained current capability with adequate heatsinking; derates to 36 A at TC = 100°C per Fig. 9. |
| Qg | 43 nC max - Total gate charge required for full turn-on; defines driver current demand and switching loss scaling with frequency. |
| EAS | 86 mJ - Single-pulse avalanche energy rating; enables safe operation during inductive turn-off transients without snubbers in relay drivers or solenoid controls. |
| RθJC | 1.87°C/W - Junction-to-case thermal resistance; allows direct thermal interface to heatsink; enables ~50 W dissipation before reaching 175°C junction limit at 25°C case temp. |
| VGS(th) | 2.0–4.0 V - Gate threshold range; ensures reliable turn-on with standard 5 V or 3.3 V logic-level gate drivers when used with appropriate margin. |
Pinout & Package
The IRFZ44ZSPBF is housed in a surface-mount D2PAK (TO-263) package with three terminals: Drain (tab), Source (pins 2 & 3), and Gate (pin 1). The exposed drain pad provides low-inductance, high-current path and serves as primary thermal conduction surface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main high-side current path and thermal interface | Electrically connected to internal die drain; must be soldered to large copper pour for thermal and current handling; electrically common with PCB ground plane if used in low-side configuration. |
| Source (Pins 2 & 3) | Reference node for gate drive and current return | Parallel pins reduce source inductance (LS = 7.5 nH); critical for minimizing gate oscillation and improving di/dt immunity in high-speed switching. |
| Gate (Pin 1) | Control terminal for channel modulation | High-impedance input requiring <43 nC charge; sensitive to ESD; layout must minimize loop area with gate resistor and driver to suppress ringing. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 13.9 mΩ @ 10 V - Reduces conduction loss by >30% vs. legacy TO-220 equivalents, enabling higher efficiency in 12–48 V industrial power supplies. |
| Repetitive avalanche rated | Up to Tjmax = 175°C - Eliminates need for external clamping in inductive load switching (e.g., solenoids, relays) without derating or reliability penalty. |
| Fast body diode | Qrr = 17–26 nC, trr = 23–35 ns - Enables clean commutation in synchronous rectifiers and reduces EMI in flyback converters operating up to 300 kHz. |
| 175°C junction rating | Extended thermal margin - Supports operation in sealed enclosures or high-ambient environments (e.g., automotive under-hood, industrial motor controllers) without forced air cooling. |
| D2PAK thermal performance | RθJC = 1.87°C/W - Delivers 2.5× better thermal resistance than comparable TO-220 devices, allowing higher power density on compact PCBs. |
Applications
| DC-DC Buck Converter | Brushed DC Motor Drive |
|---|---|
Use Scenario: High-efficiency 12 V to 5 V/3.3 V point-of-load conversion in industrial PLC modules. IC Role / Device Role: Low-side synchronous rectifier switch replacing Schottky diode. Use Value: Achieves >94% efficiency at 20 A output due to 13.9 mΩ RDS(on) and low Qrr-driven switching loss. |
Use Scenario: H-bridge control of 24 V, 15 A brushed motors in automated gate actuators. IC Role / Device Role: High-current quadrant switch with integrated body diode for freewheeling. Use Value: Withstands 200 A pulsed current (ISM) and dissipates <1.2 W at 15 A continuous, eliminating external flyback diodes. |
| AC-DC PFC Front-End | LED Driver Switching Stage |
Use Scenario: Boost switch in active PFC stage for 100–240 V AC input, 300 W output LED drivers. IC Role / Device Role: Main switching element handling 1.5 A RMS current at 65 kHz. Use Value: Low Coss(eff) = 300 pF minimizes turn-off loss; 175°C rating sustains reliability under sustained thermal stress. |
Use Scenario: Constant-current buck switch in outdoor-rated 48 V, 3 A LED streetlight drivers. IC Role / Device Role: Primary power switch modulating LED string current at 1–10 kHz PWM. Use Value: Repetitive avalanche rating absorbs inductive kickback from long LED cable runs without failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP55NF06L | RDS(on) = 14 mΩ @ 10 V, VDSS = 60 V, TO-220 package, RθJC = 2.5°C/W | Higher thermal resistance limits power density; requires larger heatsink for same current. | Preferred where through-hole assembly or lower gate charge (Qg = 35 nC) is prioritized over thermal performance. |
| IXTP50N055T | RDS(on) = 5.5 mΩ @ 10 V, VDSS = 55 V, TO-220 package, RθJC = 2.0°C/W | Lower RDS(on) improves conduction loss but increases cost and gate drive demand (Qg = 62 nC). | Selected when <10 mΩ conduction loss is mandatory and board space allows larger heatsink for higher Qg-related losses. |
Compared with STP55NF06L and IXTP50N055T, the IRFZ44ZSPBF delivers optimal balance of low RDS(on), superior thermal resistance (1.87°C/W), and D2PAK surface-mount compatibility-making it ideal for space-constrained, high-reliability industrial power stages where thermal management and assembly automation are critical.
Availability
IRFZ44ZSPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, LED drivers, and industrial power supplies requiring stable component supply, long-term lifecycle support, and RoHS-compliant lead-free packaging.
Supply support for IRFZ44ZSPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices and wide-bandgap technologies.
The IRFZ44ZSPBF belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered specifically for high-current, medium-voltage switching applications demanding low conduction loss, rugged avalanche behavior, and industrial-grade thermal reliability.
FAQ
Is IRFZ44ZSPBF suitable for 5 V logic-level gate drive?
No. The IRFZ44ZSPBF has a gate threshold voltage range of 2.0–4.0 V and is specified for RDS(on) at VGS = 10 V. At 5 V gate drive, RDS(on) rises significantly (>30 mΩ), increasing conduction loss and thermal stress. A dedicated gate driver or level shifter is required for reliable operation with 5 V microcontrollers.
What is the maximum recommended PCB copper area for the D2PAK drain pad?
Infineon recommends a minimum 1.0" × 1.0" (25.4 mm × 25.4 mm) FR-4 copper pour with ≥2 oz (70 µm) thickness and thermal vias (≥8 × 0.3 mm diameter) to the inner ground plane. This achieves the rated RθJC = 1.87°C/W and supports continuous 51 A operation at TC = 25°C per AN-994 guidelines.
Does IRFZ44ZSPBF have avalanche energy rating for repetitive operation?
Yes. The device is explicitly rated for repetitive avalanche up to Tjmax = 175°C, with EAR = 100 mJ at 25°C starting junction temperature (Fig. 16). Operation must remain within the SOA boundary defined in Fig. 8 and respect pulse width/duty cycle limits per AN-1005 to avoid cumulative thermal damage.
How does the body diode performance compare to discrete Schottky diodes?
The integrated body diode has VSD ≤ 1.2 V and Qrr = 17–26 nC at IS = 31 A, making it suitable for medium-frequency freewheeling. While Schottky diodes offer lower forward drop (~0.5 V), they lack avalanche ruggedness and require separate layout. The IRFZ44ZSPBF body diode eliminates component count and provides inherent fault tolerance in inductive switching.
IRFZ44ZSPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 51A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 13.9mOhm @ 31A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 43 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1420 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 80W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRFZ44ZSPBF FAQ
1.How can I place an order for IRFZ44ZSPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFZ44ZSPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFZ44ZSPBF reliable?
The price and inventory of IRFZ44ZSPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ44ZSPBF is usually 5 days.
3.What payment methods are accepted for IRFZ44ZSPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ44ZSPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFZ44ZSPBF?
IRFZ44ZSPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFZ44ZSPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFZ44ZSPBF?
For technical support, including IRFZ44ZSPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ44ZSPBF requirements.
6.How does Aetrix verify that IRFZ44ZSPBF is sourced from the original manufacturer or authorized distributors?
All IRFZ44ZSPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ44ZSPBF meets industry standards.
7.What is the process for return or replacement of IRFZ44ZSPBF?
All IRFZ44ZSPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ44ZSPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFZ44ZSPBF part is unused and in its original packaging.
Return procedure for IRFZ44ZSPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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