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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFZ44ZSTRRPBF

Name: IRFZ44ZSTRRPBF
Brand: Infineon Technologies
SKU: IRFZ44ZSTRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFZ44ZSTRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFZ44ZSTRRPBF.pdf

Description:: MOSFET N-CH 55V 51A D2PAK

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Product details

Overview

IRFZ44ZSTRRPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET® Power MOSFET in D2PAK (TO-263) package, designed for high-efficiency switching in DC-DC converters, motor drives, and power supplies. It delivers 51 A continuous drain current at T_C = 25°C, 13.9 mΩ R_DS(on) at V_GS = 10 V, and 55 V V_DSS, with 175°C maximum junction temperature and rated repetitive avalanche capability.

For engineers reviewing the IRFZ44ZSTRRPBF datasheet, IRFZ44ZSTRRPBF pinout, IRFZ44ZSTRRPBF application, or IRFZ44ZSTRRPBF equivalent, key selection criteria include its low conduction loss, fast switching (t_r = 68 ns, t_f = 41 ns), robust body diode (Q_rr = 17–26 nC, t_rr = 23–35 ns), and thermal performance (R_θJC = 1.87°C/W) in high-current, thermally constrained designs.

Technical Context

This MOSFET employs advanced planar silicon processing to minimize specific on-resistance while maintaining ruggedness against dynamic stress. Its gate charge profile (Q_g = 29–43 nC, Q_gd = 12–18 nC) supports efficient hard-switching up to ~100 kHz in synchronous buck topologies, with C_oss(eff) = 300 pF enabling predictable turn-off energy calculation.

The device integrates a co-packaged, optimized body diode with low V_SD (≤1.2 V) and controlled reverse recovery, allowing reliable operation in freewheeling and bidirectional current paths without external Schottky supplementation. Repetitive avalanche is validated per Fig. 15–16 under defined I_AS, t_av, and duty cycle constraints.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage before avalanche onset; sets upper limit for bus voltage in 48 V systems.
R_DS(on)	13.9 mΩ @ V_GS = 10 V - Conduction loss of 36.5 W at 51 A (I²R), dictating heatsink sizing in continuous conduction mode.
I_D (cont)	51 A @ T_C = 25°C - Sustained current capability when case is actively cooled; derates to 36 A at 100°C case temperature.
Q_g	43 nC max - Total gate charge determining driver strength requirement; 1.5 A peak drive needed for 30 ns rise time.
E_AS	86 mJ - Single-pulse avalanche energy rating; enables unclamped inductive switching survival in relay/snubberless designs.
t_r/t_f	68 ns / 41 ns - Rise/fall times measured at V_DD = 25 V, I_D = 31 A; defines minimum practical switching period and EMI envelope.
T_J max	175°C - Maximum junction temperature; allows operation in sealed enclosures or high ambient industrial environments.

Pinout & Package

IRFZ44ZSTRRPBF uses the surface-mount D2PAK (TO-263) package with three terminals: Drain (tab), Source (pins 1 & 2), and Gate (pin 3). The exposed drain pad provides low-inductance, high-current path and primary thermal conduction to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side current path and thermal interface	Electrically connected to PCB copper pour; requires solder mask opening and ≥1 in² 2-oz Cu for R_θJA ≈ 40°C/W.
Source (Pins 1 & 2)	Reference node for gate drive and current return	Low-inductance dual-pin layout minimizes source inductance (L_S = 7.5 nH), critical for dV/dt immunity and shoot-through prevention.
Gate (Pin 3)	Control terminal for channel modulation	High-impedance input requiring <100 nC total charge; sensitive to ESD-must be protected during handling and layout.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	13.9 mΩ enables <1 W conduction loss at 20 A, reducing thermal load in compact 12–48 V power stages.
Repetitive avalanche rated	Validated up to I_AS = 31 A and t_av ≤ 1 ms (Fig. 15), permitting robust operation in inductive load switching without snubbers.
175°C junction rating	Supports full current derating across -55°C to +125°C ambient, eliminating need for thermal throttling in automotive under-hood modules.
Fast body diode	t_rr = 23–35 ns and Q_rr = 17–26 nC reduce switching loss and voltage overshoot during synchronous rectification transitions.
Dynamic dv/dt rating	Rated for >4.5 V/ns (per design context), ensuring noise immunity in high-speed gate drivers and noisy industrial bus environments.

Applications

DC-DC Buck Converter

Brushed DC Motor Drive

Use Scenario: 48 V input, 12 V/20 A output synchronous buck regulator in telecom power shelf.

IC Role / Device Role / Timing Role: High-side main switch with active gate control; operates at 200 kHz with 50% duty cycle.

Use Value: 13.9 mΩ R_DS(on) limits conduction loss to 5.6 W, enabling natural convection cooling on 4-layer PCB.

Use Scenario: H-bridge driver for 24 V, 30 A brushed motor in automated gate controller.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration; commutates bidirectional current with body diode freewheeling.

Use Value: 1.2 V V_SD and 23 ns t_rr minimize freewheeling loss and voltage spike during direction reversal.

UPS Inverter Stage

Industrial Solenoid Driver

Use Scenario: 36 V battery-fed full-bridge inverter supplying 230 VAC to critical loads via transformer.

IC Role / Device Role / Timing Role: Switching element in leg topology; handles 51 A peak current during overload conditions.

Use Value: 86 mJ E_AS and 175°C T_J max allow safe operation during short-circuit events without immediate failure.

Use Scenario: 24 V solenoid actuator control in factory automation PLC output module.

IC Role / Device Role / Timing Role: High-current switch driving 40 A inductive load with 100 ms pulse duration.

Use Value: 1.87°C/W R_θJC enables direct mounting to metal chassis, achieving <60°C junction rise under continuous pulsing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF06L	R_DS(on) = 14 mΩ @ 10 V, V_DSS = 60 V, TO-220 package, no avalanche rating specified	Lacks documented repetitive avalanche capability; higher R_θJA (62°C/W) limits power density in SMT layouts	Preferable only where through-hole mounting and marginally higher V_DSS outweigh SMT assembly and avalanche robustness needs.
IXTP50N055T	R_DS(on) = 5.5 mΩ @ 10 V, V_DSS = 55 V, TO-220 package, 175°C rating, but Q_g = 92 nC	Lower conduction loss but doubles gate drive requirement; no D2PAK footprint compatibility	Select when ultra-low R_DS(on) justifies larger gate driver and board space; not drop-in for IRFZ44ZSTRRPBF layout.

Compared with STP55NF06L and IXTP50N055T, IRFZ44ZSTRRPBF uniquely balances low R_DS(on), surface-mount D2PAK packaging, verified repetitive avalanche, and moderate gate charge-making it optimal for space-constrained, high-reliability 48 V industrial switching where thermal and transient robustness are non-negotiable.

Availability

IRFZ44ZSTRRPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and UPS inverters requiring stable component supply with long-term industrial lifecycle support.

Supply support for IRFZ44ZSTRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices and system-level solutions.

This part belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-current, high-efficiency switching in industrial power conversion, motor control, and uninterruptible power systems.

FAQ

Is IRFZ44ZSTRRPBF RoHS-compliant and lead-free?

Yes, IRFZ44ZSTRRPBF is fully RoHS-compliant and lead-free, as indicated by the "PbF" suffix and confirmed in Infineon's official documentation. It meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) and is qualified for standard reflow profiles including peak temperatures up to 260°C.

What is the maximum recommended gate drive voltage?

The absolute maximum gate-to-source voltage is ±20 V, but the device is characterized and optimized for operation at V_GS = 10 V. Driving above 15 V yields diminishing R_DS(on) improvement while increasing gate oxide stress risk; 10 V is the standard design point for reliability and loss trade-off.

Can IRFZ44ZSTRRPBF replace IRFZ44N in existing designs?

No-IRFZ44ZSTRRPBF is not a direct replacement for IRFZ44N. While both are 55 V N-channel MOSFETs, IRFZ44ZSTRRPBF has lower R_DS(on) (13.9 mΩ vs. 28 mΩ), higher Q_g (43 nC vs. 67 nC), and different SOA curves. Layout and gate drive must be re-validated, especially for avalanche and switching loss behavior.

Does this MOSFET require a gate resistor, and what value is typical?

Yes-a gate resistor is required to control dV/dt, suppress ringing, and limit peak gate current. For IRFZ44ZSTRRPBF, a 10–22 Ω resistor is typical with 12 V gate drivers; values below 5 Ω risk excessive gate current (>2 A), while >47 Ω degrades switching speed and increases switching loss unnecessarily.

IRFZ44ZSTRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 51A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 13.9mOhm @ 31A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 43 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1420 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 80W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFZ44ZSTRRPBF FAQ

1.How can I place an order for IRFZ44ZSTRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFZ44ZSTRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFZ44ZSTRRPBF reliable?

The price and inventory of IRFZ44ZSTRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ44ZSTRRPBF is usually 5 days.

3.What payment methods are accepted for IRFZ44ZSTRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ44ZSTRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFZ44ZSTRRPBF?

IRFZ44ZSTRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFZ44ZSTRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFZ44ZSTRRPBF?

For technical support, including IRFZ44ZSTRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ44ZSTRRPBF requirements.

6.How does Aetrix verify that IRFZ44ZSTRRPBF is sourced from the original manufacturer or authorized distributors?

All IRFZ44ZSTRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ44ZSTRRPBF meets industry standards.

7.What is the process for return or replacement of IRFZ44ZSTRRPBF?

All IRFZ44ZSTRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ44ZSTRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFZ44ZSTRRPBF part is unused and in its original packaging.

Return procedure for IRFZ44ZSTRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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