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Infineon Technologies IRFZ46NLPBF
- Part No.:
- IRFZ46NLPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
IRFZ46NLPBF.pdf
- Description:
- MOSFET N-CH 55V 53A TO262
- Quantity:
- Payment:
- Shipping:
Inventory:8,985
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Product details
Overview
IRFZ46NLPBF from Infineon Technologies (formerly International Rectifier) is a 55V, 53A N-channel enhancement-mode power MOSFET in TO-262 (I²PAK) through-hole package, featuring RDS(on) = 16.5 mΩ at VGS = 10 V, 175°C maximum junction temperature, and full avalanche rating. It serves as a high-current switching element in DC-DC converters, motor drivers, and UPS inverters where low conduction loss and rugged transient handling are required.
For engineers reviewing the IRFZ46NLPBF datasheet, IRFZ46NLPBF pinout, IRFZ46NLPBF application, or IRFZ46NLPBF equivalent, key selection criteria include its 55V VDS, 16.5 mΩ on-resistance at 28A/10V, 180A pulsed drain current capability, fast 76 ns rise time, and 1.4°C/W junction-to-case thermal resistance - all critical for high-efficiency, thermally constrained power stage designs.
Technical Context
This device employs HEXFET® advanced process technology to achieve ultra-low specific on-resistance while maintaining robust safe operating area (SOA) up to 10 ms at 25°C. Its fully rated unclamped inductive switching capability supports 583 mJ single-pulse avalanche energy at IAS = 28A, enabling reliable operation under inductive load turn-off transients without external snubbers.
The gate charge profile shows Qg = 72 nC total, with Qgd = 26 nC (Miller charge), supporting efficient 12 Ω gate drive design. Diode characteristics include trr = 67–101 ns and Qrr = 208–312 nC at di/dt = 100 A/µs, making it suitable for synchronous rectification and freewheeling in hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V - Maximum blocking voltage before avalanche onset; sets upper limit for bus voltage in buck, half-bridge, and flyback primary switches. |
| RDS(on) | 16.5 mΩ @ VGS = 10 V, ID = 28 A - Directly determines I²R conduction loss; enables ≤1.3 W loss at 53 A continuous (TC = 25°C). |
| ID (continuous) | 53 A @ TC = 25°C - Sustained current capability with heatsink; derates to 37 A at TC = 100°C per linear 0.71 W/°C factor. |
| EAS | 583 mJ - Single-pulse avalanche energy rating; allows safe operation during unclamped inductive turn-off events up to 28 A. |
| tr/tf | 76 ns / 57 ns - Fast switching transitions reduce switching losses; compatible with PWM frequencies up to ~200 kHz in hard-switched applications. |
| Qg | 72 nC - Total gate charge defines gate driver current demand; requires ≥6 mA average drive current at 100 kHz, 10 V swing. |
Pinout & Package
IRFZ46NLPBF uses the TO-262 (I²PAK) through-hole package - a low-profile variant of the D2Pak optimized for vertical mounting and improved thermal interface to PCB copper planes. Its three-terminal configuration provides mechanical stability and lower thermal resistance than SO-8 or DPAK alternatives.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D) | Main current-carrying terminal connected to die backside | Electrically tied to metal tab; must be isolated from heatsink unless referenced to system ground; primary path for high-current load return. |
| Source (S) | Reference node for gate control and current sensing | Serves as common return for gate drive loop and current measurement; low-inductance layout critical for stable switching. |
| Gate (G) | Control electrode modulating channel conductivity | High-impedance input requiring <100 nA leakage; sensitive to ESD; needs series resistor (12 Ω typical) to damp oscillation and control dv/dt. |
Key Features
| Feature | Design Value |
|---|---|
| Fully avalanche-rated operation | 583 mJ single-pulse energy withstand enables elimination of external clamping circuits in inductive switching applications. |
| Low RDS(on) × Qg figure-of-merit | 16.5 mΩ × 72 nC = 1.19 Ω·nC - balances conduction and switching loss for high-frequency, high-current SMPS stages. |
| 175°C maximum junction temperature | Supports operation in sealed enclosures or high-ambient environments without derating beyond datasheet thermal limits. |
| Fast body diode recovery | trr = 67 ns typ., Qrr = 208 nC - reduces reverse recovery loss and EMI in non-synchronous rectified topologies. |
Applications
| Motor Drive Half-Bridge | UPS Inverter Output Stage |
|---|---|
Use Scenario: Driving brushed DC or BLDC motor phases in industrial automation controllers with 24–48 V bus. IC Role / Device Role / Timing Role: High-side and low-side switching element in H-bridge topology; handles bidirectional current up to 53 A peak. Use Value: 16.5 mΩ RDS(on) minimizes I²R heating during stall conditions; 180 A pulsed rating accommodates startup surges. | Use Scenario: Final-stage power switching in line-interactive UPS systems converting 48 V DC battery to 120/230 V AC output. IC Role / Device Role / Timing Role: Low-side switch in full-bridge inverter; commutates 50/60 Hz fundamental with high-frequency PWM carrier. Use Value: 175°C TJ rating ensures reliability during extended backup runtime; avalanche rating protects against transformer leakage inductance spikes. |
| DC-DC Converter Primary Switch | Industrial Power Supply SR Control |
Use Scenario: Primary-side switch in 300–500 W isolated forward or half-bridge DC-DC converters for telecom and server PSUs. IC Role / Device Role / Timing Role: Main power switch conducting high dI/dt during PWM on-time; subjected to VDS ringing and voltage overshoot. Use Value: 55 V VDS supports 48 V input with 20% margin; 1.4°C/W RθJC enables direct heatsink mounting for <1°C/W total thermal path. | Use Scenario: Synchronous rectifier in secondary-side of LLC resonant converter for high-efficiency 12 V/200 A server VRMs. IC Role / Device Role / Timing Role: Low-VDS replacement for Schottky diodes; body diode conducts freewheeling current before gate turn-on. Use Value: 67 ns trr and low Qrr suppress shoot-through risk and reduce gate drive complexity versus discrete diode + MOSFET solutions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP55NF06L | 60 V VDS, 50 A ID, RDS(on) = 14 mΩ, TO-220 package | Higher voltage rating but lower current; lacks full avalanche rating and 175°C TJ | Preferred where 60 V margin is needed and TO-220 mounting is acceptable; not drop-in due to different footprint and thermal interface. |
| IXTH50N10L2 | 100 V VDS, 50 A ID, RDS(on) = 22 mΩ, TO-247 package | Higher voltage, higher RDS(on), larger package; includes logic-level gate (2.5 V VGS(th)) | Used when 100 V bus tolerance is mandatory; requires redesign for TO-247 mounting and gate drive voltage scaling. |
Compared with STP55NF06L and IXTH50N10L2, IRFZ46NLPBF offers optimal balance of 55 V rating, 16.5 mΩ conduction loss, TO-262 thermal performance, and proven avalanche ruggedness - making it preferred for cost-sensitive, high-reliability 48 V industrial power stages where exact voltage headroom and package height are constrained.
Availability
IRFZ46NLPBF is available at Aetrix Electronics and suitable for motor drives, UPS inverters, and DC-DC converters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for IRFZ46NLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with core expertise in silicon-based power semiconductors.
The IRFZ46NLPBF belongs to Infineon's legacy HEXFET® power MOSFET product line, engineered for high-current, high-ruggedness switching in industrial power conversion, motor control, and uninterruptible power systems.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The IRFZ46NLPBF supports 37 A continuous drain current at TC = 100°C with VGS = 10 V, based on its 0.71 W/°C linear derating factor from 107 W at 25°C. This value assumes adequate heatsinking and is validated by the SOA curve in Figure 8 of the datasheet, which confirms safe operation up to 10 ms at 37 A and 44 V.
Is IRFZ46NLPBF pin-compatible with IRFZ46NS?
Yes - IRFZ46NLPBF (TO-262) and IRFZ46NS (D2Pak) share identical pinout: Drain (tab), Source (pin 2), Gate (pin 1). However, their packages differ mechanically: TO-262 is through-hole low-profile, while D2Pak is surface-mount. PCB layout and thermal interface must be redesigned accordingly despite electrical equivalence.
Does this MOSFET require a gate resistor, and what value is recommended?
A series gate resistor is required to control switching speed and suppress oscillation. The datasheet recommends RG = 12 Ω for standard switching tests (Figure 10). For EMI-sensitive applications, 25 Ω may be used to reduce dv/dt; for high-frequency operation (>100 kHz), values down to 5 Ω can be applied if gate drive strength permits and ringing is verified.
Can IRFZ46NLPBF be used in synchronous rectification without external diode control?
No - IRFZ46NLPBF is not a logic-level MOSFET (VGS(th) = 2.0–4.0 V); its gate threshold is too high for reliable self-driven synchronous rectification from output winding voltage. Dedicated gate driver ICs or controller-integrated SR logic are required to ensure proper turn-on timing and avoid cross-conduction.
IRFZ46NLPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 53A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 16.5mOhm @ 28A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 72 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1696 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.8W (Ta), 107W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-262
IRFZ46NLPBF FAQ
1.How can I place an order for IRFZ46NLPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFZ46NLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFZ46NLPBF reliable?
The price and inventory of IRFZ46NLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ46NLPBF is usually 5 days.
3.What payment methods are accepted for IRFZ46NLPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ46NLPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFZ46NLPBF?
IRFZ46NLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFZ46NLPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFZ46NLPBF?
For technical support, including IRFZ46NLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ46NLPBF requirements.
6.How does Aetrix verify that IRFZ46NLPBF is sourced from the original manufacturer or authorized distributors?
All IRFZ46NLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ46NLPBF meets industry standards.
7.What is the process for return or replacement of IRFZ46NLPBF?
All IRFZ46NLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ46NLPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFZ46NLPBF part is unused and in its original packaging.
Return procedure for IRFZ46NLPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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