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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFZ46NSPBF

Name: IRFZ46NSPBF
Brand: Infineon Technologies
SKU: IRFZ46NSPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFZ46NSPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFZ46NSPBF.pdf

Description:: MOSFET N-CH 55V 53A D2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:9,147

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Product details

Overview

IRFZ46NSPBF from Infineon Technologies (formerly International Rectifier) is a 55V, 53A N-channel enhancement-mode surface-mount power MOSFET in D2PAK package, featuring R_DS(on) = 16.5 mΩ at V_GS = 10 V, 175°C maximum junction temperature, and full avalanche rating. It serves as a high-efficiency main switch in DC-DC converters, motor drives, and UPS inverters.

For engineers reviewing the IRFZ46NSPBF datasheet, IRFZ46NSPBF pinout, IRFZ46NSPBF application, or IRFZ46NSPBF equivalent, key selection criteria include its 16.5 mΩ on-resistance, 180 A pulsed drain current capability, fast 76 ns rise time, 57 ns fall time, and D2PAK thermal performance with R_θJC = 1.4 °C/W.

Technical Context

This HEXFET® device uses advanced silicon processing to minimize conduction loss while maintaining robust switching behavior. Its gate charge profile (Q_g = 72 nC, Q_gd = 26 nC) supports efficient hard-switching up to several hundred kHz in synchronous buck topologies.

The integrated body diode exhibits t_rr = 67–101 ns and Q_rr = 208–312 nC at I_F = 28 A, enabling moderate-frequency freewheeling in non-isolated converters without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage for 12/24/48 V bus applications
R_DS(on)	16.5 mΩ @ V_GS = 10 V - Enables ≤1.5 W conduction loss at 30 A continuous
I_D @ T_C = 25°C	53 A - Sustains high-current loads with PCB-mounted heatsinking
E_AS	583 mJ - Withstands unclamped inductive switching events without failure
t_r/t_f	76 ns / 57 ns - Supports >200 kHz PWM operation with low switching loss
Q_g	72 nC - Requires ~0.72 µC gate drive per 10 V transition at 10 kHz
T_J max	+175°C - Allows operation in sealed enclosures or high-ambient industrial environments

Pinout & Package

IRFZ46NSPBF is housed in a surface-mount D2PAK (TO-262) package with exposed drain pad for thermal and electrical connection. The package provides low R_θJC = 1.4 °C/W and supports >100 W power dissipation when mounted on a 1"² FR-4 PCB with copper pour.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	High-current output node	Electrically and thermally connected to exposed copper pad; must be soldered to large PCB copper area
Source	Power return / reference node	Low-inductance path to ground plane; critical for gate drive loop integrity
Gate	Control input	High-impedance MOS control terminal; requires <12 Ω series resistance to damp ringing

Key Features

Feature	Design Value
Advanced HEXFET® process	Delivers lowest R_DS(on) per die area among D2PAK 55 V MOSFETs of its era
Full avalanche rating	Guarantees single-pulse E_AS = 583 mJ without derating - eliminates need for snubbers in many inductive loads
Fast body diode	t_rr = 67 ns typical enables clean freewheeling in synchronous rectification and H-bridge motor control
Lead-free construction	Complies with RoHS Directive 2011/65/EU; compatible with standard Pb-free reflow profiles (peak 300°C)

Applications

DC-DC Buck Converter

Brushed DC Motor Drive

Use Scenario: 48 V input to 12 V/20 A output step-down converter in telecom power shelf.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 250 kHz with 30% duty cycle.

Use Value: 16.5 mΩ R_DS(on) limits conduction loss to 9.9 W at 20 A, enabling >94% efficiency without forced air cooling.

Use Scenario: Bidirectional 24 V, 30 A brushed motor controller in automated gate actuator.

IC Role / Device Role / Timing Role: Low-side switching element in H-bridge with PWM frequency of 15 kHz.

Use Value: 180 A pulsed current rating accommodates 6× stall current surges; 175°C T_J rating ensures reliability under intermittent overload.

Uninterruptible Power Supply (UPS)

Industrial LED Driver

Use Scenario: Inverter stage converting 350 V DC bus to 230 V AC output in line-interactive UPS.

IC Role / Device Role / Timing Role: Half-bridge leg switch in modified sine-wave topology with 50 Hz fundamental and 2 kHz carrier.

Use Value: Full avalanche rating absorbs transformer leakage energy during zero-cross transitions, eliminating external clamping diodes.

Use Scenario: Constant-current 3 A, 40 V string driver for high-bay LED luminaires in warehouse lighting.

IC Role / Device Role / Timing Role: Primary switch in flyback converter operating at 65 kHz with primary-side regulation.

Use Value: 72 nC total gate charge allows direct drive from UC384x controllers without external buffer, reducing BOM count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF06L	R_DS(on) = 14 mΩ @ 10 V; lower V_GS(th) (1–2.5 V); TO-220 package	Lacks D2PAK thermal performance; unsuitable for high-power surface-mount designs	Prefer for through-hole prototyping or lower-cost manual assembly where PCB space permits TO-220 footprint
IXTP50N055	R_DS(on) = 11.5 mΩ @ 10 V; TO-220AB package; higher Q_g (95 nC)	Higher gate drive demand increases controller loading; no D2PAK mounting compatibility	Select only when sub-12 mΩ on-resistance justifies added gate drive complexity and thermal redesign

Compared with STP55NF06L and IXTP50N055, IRFZ46NSPBF offers optimal balance of D2PAK thermal capability, 16.5 mΩ conduction loss, and 72 nC gate charge - making it uniquely suited for production-grade surface-mount power stages requiring field-proven ruggedness and manufacturability.

Availability

IRFZ46NSPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, uninterruptible power supplies, and industrial LED drivers requiring stable component supply across multi-year production cycles.

Supply support for IRFZ46NSPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The HEXFET® product line was originally developed by International Rectifier and continues under Infineon to deliver rugged, high-current power MOSFETs optimized for switching power supplies, motor control, and industrial power conversion.

FAQ

Is IRFZ46NSPBF suitable for logic-level gate drive?

No. IRFZ46NSPBF has a gate threshold voltage range of 2.0–4.0 V and requires ≥10 V gate drive for full enhancement. It is not a logic-level MOSFET; driving it from 3.3 V or 5 V microcontrollers will result in excessive R_DS(on) and thermal runaway. A dedicated gate driver or level-shifting circuit is mandatory.

What is the maximum recommended PCB copper area for thermal performance?

For optimal thermal performance, the D2PAK drain pad should be connected to ≥1"² (6.5 cm²) of 2-oz copper on the primary layer, with ≥4 thermal vias (0.3 mm diameter) connecting to an internal or backside ground plane. This configuration achieves the published R_θJA = 40 °C/W and supports 107 W power dissipation at T_C = 25°C.

Does IRFZ46NSPBF have built-in ESD protection?

No. IRFZ46NSPBF lacks integrated gate protection diodes. Its gate oxide is susceptible to electrostatic discharge damage. Handling requires strict adherence to J-STD-020 guidelines: use grounded wrist straps, conductive foam storage, and ionized air workstations. Gate terminals must never be left floating during PCB handling or reflow.

Can IRFZ46NSPBF replace IRFZ44N in existing designs?

Yes, with verification. IRFZ46NSPBF offers lower R_DS(on) (16.5 mΩ vs. 28 mΩ), higher I_D (53 A vs. 49 A), and improved avalanche energy (583 mJ vs. 360 mJ). However, its higher Q_g (72 nC vs. 67 nC) may increase switching loss at very high frequencies (>500 kHz). Thermal and layout validation is required before drop-in replacement.

IRFZ46NSPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 53A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 16.5mOhm @ 28A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 72 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1696 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 107W (Tc)

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFZ46NSPBF FAQ

1.How can I place an order for IRFZ46NSPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFZ46NSPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFZ46NSPBF reliable?

The price and inventory of IRFZ46NSPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ46NSPBF is usually 5 days.

3.What payment methods are accepted for IRFZ46NSPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ46NSPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFZ46NSPBF?

IRFZ46NSPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFZ46NSPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFZ46NSPBF?

For technical support, including IRFZ46NSPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ46NSPBF requirements.

6.How does Aetrix verify that IRFZ46NSPBF is sourced from the original manufacturer or authorized distributors?

All IRFZ46NSPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ46NSPBF meets industry standards.

7.What is the process for return or replacement of IRFZ46NSPBF?

All IRFZ46NSPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ46NSPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFZ46NSPBF part is unused and in its original packaging.

Return procedure for IRFZ46NSPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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