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Infineon Technologies IRFZ46NSTRLPBF

Part No.:
IRFZ46NSTRLPBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIRFZ46NSTRLPBF.pdf
Description:
MOSFET N-CH 55V 53A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,836

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Product details

Overview

IRFZ46NSTRLPBF from Infineon Technologies (formerly International Rectifier) is a 55V, 53A N-channel D2PAK surface-mount power MOSFET with RDS(on) = 16.5 mΩ at VGS = 10 V, fully avalanche-rated, and rated for 175°C junction operation. It serves as a high-efficiency main switch in DC-DC converters, motor drives, and UPS inverters where fast switching, rugged unclamped inductive switching, and low conduction loss are critical.

For engineers reviewing the IRFZ46NSTRLPBF datasheet, IRFZ46NSTRLPBF pinout, IRFZ46NSTRLPBF application, or IRFZ46NSTRLPBF equivalent, key selection criteria include its 16.5 mΩ on-resistance, 72 nC total gate charge, 583 mJ single-pulse avalanche energy, 1.4°C/W junction-to-case thermal resistance, and D2PAK package compatibility with high-current PCB layouts.

Technical Context

This HEXFET® device uses advanced planar silicon processing to achieve low RDS(on) per die area while maintaining robust avalanche capability and fast switching (tr = 76 ns, tf = 57 ns). Its body diode exhibits 67–101 ns reverse recovery time and 208–312 nC Qrr, enabling moderate-frequency hard-switched topologies.

The MOSFET features a gate threshold voltage of 2.0–4.0 V, transconductance of 19 S, and Miller charge (Qgd) of 26 nC - parameters that directly influence drive strength requirements and switching loss trade-offs in gate-driven half-bridge configurations.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS55 V - Maximum blocking voltage before avalanche onset; defines usable bus voltage headroom in 48V systems.
RDS(on)16.5 mΩ @ VGS = 10 V - Conduction loss of 4.6 W at 53 A continuous drain current (TC = 25°C).
ID (continuous)53 A @ TC = 25°C - Requires heatsinking or forced airflow when operating above ~20 A in ambient air.
Qg72 nC - Determines minimum gate driver peak current (e.g., ≥2.4 A for 30 ns rise time with 30 Ω gate resistor).
EAS583 mJ - Enables reliable operation under unclamped inductive switching up to 28 A without external snubbing.
RθJC1.4 °C/W - Junction-to-case thermal resistance enables direct mounting to heatsink; limits ΔTJ-C to 150°C at 107 W dissipation.

Pinout & Package

D2PAK (TO-262) surface-mount package: thermally enhanced, isolated drain tab, 3-pin layout optimized for high-current PCB copper pours and low-inductance source connections.

Pin/TerminalCircuit RoleDesign Meaning
Drain (Tab)Main current path output / heat sink interfaceElectrically connected to exposed metal tab; must be electrically isolated from PCB ground unless system design requires common-drain topology.
SourceReturn path for load current / reference node for gate driveLow-inductance connection critical for minimizing shoot-through risk and gate oscillation in bridge configurations.
GateControl terminal for channel modulationHigh-impedance input requiring controlled slew rate; sensitive to ringing due to Qgd-dominated Miller effect during switching transitions.

Key Features

FeatureDesign Value
Fully avalanche-ratedWithstands 583 mJ single-pulse avalanche energy without failure - eliminates need for external clamping in relay drivers and solenoid controls.
Low RDS(on) × Qg figure-of-merit16.5 mΩ × 72 nC = 1.19 Ω·nC - balances conduction and switching losses for 20–100 kHz SMPS designs.
175°C maximum junction temperatureEnables operation in sealed enclosures or high-ambient environments (e.g., automotive under-hood, industrial motor control cabinets).
Lead-free and RoHS-compliantMeets IPC-J-STD-020D reflow profile requirements up to 260°C peak, compatible with standard SMT assembly lines.

Applications

DC-DC Buck ConverterBrushed DC Motor Drive

Use Scenario: 48V-to-12V step-down converter delivering up to 40 A continuous output in telecom power shelves.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 100 kHz with 50% duty cycle.

Use Value: 16.5 mΩ RDS(on) reduces conduction loss to <1.5 W at full load, improving efficiency by >1.2% versus 25 mΩ alternatives.

Use Scenario: H-bridge driver for 24V/30A brushed motors in automated guided vehicles (AGVs).

IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current with PWM frequencies up to 20 kHz.

Use Value: 583 mJ EAS rating prevents failure during motor stall or rapid direction reversal without snubber networks.

Uninterruptible Power Supply (UPS)Inductive Load Switching

Use Scenario: Output inverter stage in 1 kVA line-interactive UPS converting 360 VDC bus to 230 VAC.

IC Role / Device Role / Timing Role: Half-bridge leg switch in modified sine-wave or SPWM topology.

Use Value: 1.4°C/W RθJC allows direct heatsink mounting, sustaining 107 W dissipation during overload conditions without derating.

Use Scenario: Solid-state relay replacement for 24V solenoid valves in factory automation I/O modules.

IC Role / Device Role / Timing Role: Single-ended switch controlling 28 A inductive loads with 100 µs turn-off requirement.

Use Value: 28 A IAR and 11 mJ EAR enable safe turn-off without external freewheeling diode stress or voltage overshoot.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP55NF06LRDS(on) = 14 mΩ (lower), Qg = 85 nC (higher), VDSS = 60 VBetter conduction loss but higher gate drive demand; less suitable for high-frequency switching above 80 kHz.Prefer when thermal margin is constrained and switching frequency ≤50 kHz.
IXTH50N50L2RDS(on) = 40 mΩ (higher), EAS = 1200 mJ (higher), VDSS = 500 VHigher voltage rating and avalanche robustness, but significantly higher conduction loss at 48V bus.Prefer only in 400V+ systems where voltage margin outweighs efficiency penalty.

Compared with STP55NF06L and IXTH50N50L2, IRFZ46NSTRLPBF offers optimal balance of low RDS(on), moderate Qg, and proven 55V avalanche performance - making it preferred for 24–48V industrial switching where both efficiency and ruggedness are required.

Availability

IRFZ46NSTRLPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, uninterruptible power supplies, and industrial solenoid controllers requiring stable component supply and long-term manufacturing continuity.

Supply support for IRFZ46NSTRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices and wide-bandgap solutions.

The HEXFET® product line was originally developed by International Rectifier and continues under Infineon to deliver rugged, high-current silicon MOSFETs optimized for industrial motor control, power conversion, and harsh-environment switching.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFZ46NSTRLPBF supports 37 A continuous drain current at TC = 100°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and silicon die; actual usable current depends on PCB copper area, heatsink interface, and ambient airflow.

Does this MOSFET require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to control dV/dt and prevent oscillation. For typical 12 V gate drive and 100 kHz switching, a 12 Ω resistor is recommended (per datasheet Fig. 10), yielding ~52 ns turn-off delay and damping Miller-induced ringing without excessive switching loss.

Can IRFZ46NSTRLPBF replace IRFZ46N in existing designs?

Yes - IRFZ46NSTRLPBF is the lead-free, tape-and-reel packaged version of the legacy IRFZ46N. It shares identical electrical specifications, pinout, and thermal characteristics; only packaging (D2PAK vs. TO-220) and RoHS compliance differ. No layout or drive circuit changes are needed.

Is the body diode suitable for synchronous rectification?

No - the body diode has relatively high forward voltage (~1.3 V at 28 A) and slow reverse recovery (67–101 ns), making it unsuitable for high-efficiency synchronous rectification. External Schottky or MOSFET-based synchronous rectifiers are required for >90% efficiency in buck converters.

IRFZ46NSTRLPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
53A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
16.5mOhm @ 28A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
72 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1696 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
3.8W (Ta), 107W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

IRFZ46NSTRLPBF FAQ

1.How can I place an order for IRFZ46NSTRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFZ46NSTRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFZ46NSTRLPBF reliable?

The price and inventory of IRFZ46NSTRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ46NSTRLPBF is usually 5 days.

3.What payment methods are accepted for IRFZ46NSTRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ46NSTRLPBF transactions.

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4.How is shipping managed for IRFZ46NSTRLPBF?

IRFZ46NSTRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFZ46NSTRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFZ46NSTRLPBF?

For technical support, including IRFZ46NSTRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ46NSTRLPBF requirements.

6.How does Aetrix verify that IRFZ46NSTRLPBF is sourced from the original manufacturer or authorized distributors?

All IRFZ46NSTRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ46NSTRLPBF meets industry standards.

7.What is the process for return or replacement of IRFZ46NSTRLPBF?

All IRFZ46NSTRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ46NSTRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFZ46NSTRLPBF part is unused and in its original packaging.

Return procedure for IRFZ46NSTRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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