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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFZ46NSTRRPBF

Name: IRFZ46NSTRRPBF
Brand: Infineon Technologies
SKU: IRFZ46NSTRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFZ46NSTRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFZ46NSTRRPBF.pdf

Description:: MOSFET N-CH 55V 53A D2PAK

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Product details

Overview

IRFZ46NSTRRPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode D2PAK surface-mount power MOSFET with 55 V V_BRDSS, 0.0165 Ω R_DS(on) at V_GS = 10 V and 28 A, 53 A continuous drain current at T_C = 25°C, and fully avalanche-rated operation up to 175°C junction temperature. It serves as a high-efficiency main switch in DC-DC converters, motor drives, and UPS inverters.

For engineers reviewing the IRFZ46NSTRRPBF datasheet, IRFZ46NSTRRPBF pinout, IRFZ46NSTRRPBF application, or IRFZ46NSTRRPBF equivalent, key selection criteria include its 1.4 °C/W junction-to-case thermal resistance, 72 nC total gate charge, 583 mJ single-pulse avalanche energy, fast 76 ns rise time, and D2PAK package compatibility with high-current PCB layouts requiring low-inductance source connections.

Technical Context

This HEXFET® device uses advanced silicon processing to achieve ultra-low on-resistance per die area while maintaining rugged unclamped inductive switching capability. Its body diode exhibits 67–101 ns reverse recovery time and 208–312 nC Q_rr, enabling moderate-frequency hard-switched topologies without external snubbing in many cases.

The gate threshold voltage range (2.0–4.0 V) ensures reliable turn-on with standard 5 V or 10 V logic-level drivers, and its transconductance of 19 S supports stable current regulation. The device's safe operating area (SOA) is defined up to 100 µs pulse width at 25°C ambient, constrained by R_DS(on)-limited conduction and thermal impedance limits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BRDSS	55 V - Withstands up to 55 V drain-source blocking voltage before avalanche onset, suitable for 48 V bus systems with margin.
R_DS(on)	0.0165 Ω @ V_GS = 10 V, I_D = 28 A - Delivers ≤0.46 W conduction loss at 35 A, enabling high-efficiency power stages.
I_D (continuous, T_C = 25°C)	53 A - Supports high-current output stages without forced air cooling when mounted on ≥1"² FR-4 PCB.
E_AS	583 mJ - Absorbs unclamped inductive energy during turn-off without failure, critical for relay/motor driver reliability.
Q_g	72 nC - Requires ~0.72 µC gate drive per 10 V swing; dictates gate driver peak current and switching loss trade-offs.
t_r/t_f	76 ns / 57 ns - Enables switching frequencies up to ~200 kHz in hard-switched converters with controlled EMI.
R_θJC	1.4 °C/W - Enables direct heatsink mounting for thermal management; junction rises only 1.4°C per watt dissipated into case.

Pinout & Package

The IRFZ46NSTRRPBF is housed in a D2PAK (TO-262) surface-mount package with gull-wing leads, optimized for high-power density and low thermal resistance. Its three terminals are electrically isolated from the exposed drain pad, which serves as the primary heat path.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current-carrying terminal, connected to internal die backside	Exposed copper pad on underside - must be soldered to large copper pour or heatsink for thermal performance.
Source (S)	Return path for load current; reference node for gate drive	Low-inductance connection required; layout must minimize LS to preserve switching speed and reduce ringing.
Gate (G)	Control electrode for channel formation	High-impedance input; requires low-impedance gate driver (≤12 Ω series resistance typical) to control dv/dt and EMI.

Key Features

Feature	Design Value
Fully avalanche-rated	Withstands 583 mJ single-pulse avalanche energy without degradation - eliminates need for external clamping in inductive load switching.
Advanced HEXFET® process	0.0165 Ω R_DS(on) at 10 V drive enables >97% efficiency in 48 V/30 A buck converters at full load.
175°C maximum junction temperature	Supports operation in sealed enclosures or high-ambient environments (e.g., automotive under-hood, industrial motor controls).
Fast body diode	67 ns typical t_rr and 208 nC Q_rr allow use in synchronous rectification or freewheeling roles without excessive reverse recovery loss.
D2PAK thermal performance	1.4 °C/W R_θJC enables 107 W power dissipation at T_C = 25°C - highest power density among standard surface-mount packages.

Applications

DC-DC Power Conversion

Brushed DC Motor Control

Use Scenario: Step-down (buck) converter in telecom power supply delivering 12 V/30 A from 48 V input.

IC Role / Device Role / Timing Role: Main high-side switching element operating at 100–200 kHz with synchronous rectification.

Use Value: Low R_DS(on) minimizes conduction loss; 72 nC Q_g allows efficient gate driving with integrated controller ICs like UCC28950.

Use Scenario: H-bridge driver for 24 V, 20 A brushed DC motor in automated gate actuator.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration, commutated at ≤5 kHz with PWM duty control.

Use Value: Avalanche rating absorbs inductive kickback during rapid direction reversal; 175°C rating ensures reliability in enclosed outdoor housings.

Uninterruptible Power Supply (UPS)

Industrial AC/DC Front-End

Use Scenario: Inverter stage converting 350 V DC bus to 230 V AC output in line-interactive UPS.

IC Role / Device Role / Timing Role: Switching element in full-bridge topology operating at 16–20 kHz with sinusoidal PWM.

Use Value: 55 V rating provides margin above 48 V battery stack; SOA supports short-circuit withstand during grid fault conditions.

Use Scenario: PFC boost switch in 1 kW industrial AC/DC power supply with active front-end.

IC Role / Device Role / Timing Role: High-current boost switch operating at 65–100 kHz with critical conduction mode (CrM).

Use Value: Fast t_r/t_f reduces switching loss; low Q_gd/Q_gs ratio improves Miller immunity during high dv/dt transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF06L	R_DS(on) = 0.014 Ω (lower), V_BRDSS = 60 V, Q_g = 85 nC (higher), TO-220 package	Requires through-hole mounting and larger board area; better voltage margin but higher gate drive loss	Prefer when 60 V rating and lower on-resistance outweigh surface-mount constraints and thermal interface complexity.
IRF1404ZPBF	R_DS(on) = 0.020 Ω (higher), V_BRDSS = 40 V, Q_g = 131 nC (much higher), D2PAK package	Lower voltage rating restricts use to ≤32 V systems; slower switching increases loss above 50 kHz	Acceptable only in cost-sensitive, low-frequency (<30 kHz), low-voltage applications where gate drive capability is abundant.

Compared with STP55NF06L and IRF1404ZPBF, the IRFZ46NSTRRPBF offers optimal balance of voltage rating, on-resistance, gate charge, and surface-mount thermal performance for 48 V industrial power stages - making it preferred where board space, thermal management, and switching frequency co-constrain design.

Availability

IRFZ46NSTRRPBF is available at Aetrix Electronics and suitable for DC-DC power conversion, brushed DC motor control, and uninterruptible power supply (UPS) applications requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFZ46NSTRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices and system-level solutions.

The IRFZ46NSTRRPBF belongs to Infineon's legacy HEXFET® power MOSFET product line, engineered for high-current, high-reliability industrial switching applications where avalanche robustness, thermal stability, and low conduction loss are critical.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFZ46NSTRRPBF supports 37 A continuous drain current at T_C = 100°C with V_GS = 10 V, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and silicon, not gate drive capability. Operation above this current requires active cooling or reduced duty cycle to maintain T_J ≤ 175°C.

Is the IRFZ46NSTRRPBF lead-free and RoHS-compliant?

Yes, the "PBF" suffix confirms IRFZ46NSTRRPBF is lead-free and compliant with EU RoHS Directive 2011/65/EU. The device uses matte tin plating on leads and meets JEDEC J-STD-020 moisture sensitivity level 3 (MSL-3), requiring bake prior to reflow if exposed to ambient beyond floor life.

Can this MOSFET replace the IRFZ46NS in existing designs?

Yes - IRFZ46NSTRRPBF is a direct replacement for IRFZ46NS, sharing identical electrical specifications, D2PAK package outline, pinout, and thermal characteristics. The "TRR" denotes tape-and-reel packaging, and "PBF" confirms lead-free finish; no layout or drive circuit changes are needed for drop-in substitution.

What is the recommended gate resistor value for 100 kHz switching?

A 10–12 Ω gate resistor is recommended for 100 kHz operation to balance switching speed and gate driver stress. At 10 V gate drive, 72 nC Q_g, and 12 Ω, the 10–90% gate voltage rise time is ~0.8 µs - sufficient to limit dv/dt-induced shoot-through while keeping switching losses below 1.2 W at 30 A load current.

IRFZ46NSTRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 53A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 16.5mOhm @ 28A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 72 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1696 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 107W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFZ46NSTRRPBF FAQ

1.How can I place an order for IRFZ46NSTRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFZ46NSTRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFZ46NSTRRPBF reliable?

The price and inventory of IRFZ46NSTRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ46NSTRRPBF is usually 5 days.

3.What payment methods are accepted for IRFZ46NSTRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ46NSTRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFZ46NSTRRPBF?

IRFZ46NSTRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFZ46NSTRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFZ46NSTRRPBF?

For technical support, including IRFZ46NSTRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ46NSTRRPBF requirements.

6.How does Aetrix verify that IRFZ46NSTRRPBF is sourced from the original manufacturer or authorized distributors?

All IRFZ46NSTRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ46NSTRRPBF meets industry standards.

7.What is the process for return or replacement of IRFZ46NSTRRPBF?

All IRFZ46NSTRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ46NSTRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFZ46NSTRRPBF part is unused and in its original packaging.

Return procedure for IRFZ46NSTRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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