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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFZ46ZPBF

Name: IRFZ46ZPBF
Brand: Infineon Technologies
SKU: IRFZ46ZPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFZ46ZPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFZ46ZPBF.pdf

Description:: MOSFET N-CH 55V 51A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFZ46ZPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, designed for high-efficiency switching in DC-DC converters, motor drives, and power supplies. It delivers 51A continuous drain current at 25°C, 13.6mΩ R_DS(on) at V_GS = 10V, 55V V_DSS, and supports repetitive avalanche up to T_jmax = 175°C.

For engineers reviewing the IRFZ46ZPBF datasheet, IRFZ46ZPBF pinout, IRFZ46ZPBF application, or IRFZ46ZPBF equivalent, key selection criteria include its low conduction loss, fast switching (t_r = 63ns, t_f = 39ns), body diode recovery (t_rr = 21–31ns), thermal robustness (R_θJC = 1.84°C/W), and lead-free compliance per JEDEC J-STD-020.

Technical Context

This MOSFET employs advanced silicon processing to minimize on-resistance per die area while maintaining rugged unclamped inductive switching capability. Its gate threshold voltage (2.0–4.0V) enables compatibility with 3.3V/5V logic-level drivers when operated with sufficient V_GS margin, and its 31nC total gate charge supports efficient high-frequency PWM operation up to several hundred kHz.

The integrated body diode exhibits low forward voltage (V_SD ≤ 1.3V at 31A) and controlled reverse recovery (Q_rr = 16–24nC), reducing switching losses in synchronous rectification and freewheeling applications. Thermal design is enabled by validated junction-to-case resistance (1.84°C/W) and documented transient impedance curves for pulse-width-dependent thermal management.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55V - Maximum blocking voltage before avalanche; sets upper limit for bus voltage in buck, flyback, and half-bridge topologies.
R_DS(on)	13.6mΩ @ V_GS = 10V - Conduction loss of ~0.035W at 30A DC, enabling high-efficiency power stages without forced air cooling.
I_D (25°C)	51A - Continuous current rating at case temperature ≤25°C; derates to 36A at 100°C per Fig. 9.
Q_g	46nC max - Gate drive energy requirement determines driver strength needed; compatible with common gate drivers like IR2110 or UCC27531.
t_r/t_f	63ns / 39ns - Fast edge rates reduce switching transition time, lowering overlap losses in hard-switched converters.
E_AS	300mJ - Single-pulse avalanche energy rating validates robustness against inductive kickback in relay/motor control.
T_jmax	175°C - Enables operation in high-ambient environments (e.g., automotive under-hood, industrial enclosures) with appropriate heatsinking.

Pinout & Package

IRFZ46ZPBF uses the standard TO-220AB package with isolated tab (drain-connected). The three-terminal configuration supports through-hole mounting and direct heatsink attachment via the metal tab.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side current path	Electrically connected to metal tab; must be insulated from heatsink unless system ground reference permits direct connection.
Source	Return path for load current	Common reference node for gate drive and current sensing; ties to power ground or low-side switch source.
Gate	Control terminal for channel modulation	High-impedance input requiring <1µA bias; sensitive to ESD; requires RC snubber or gate resistor (≥15Ω) for ringing suppression.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	10.9mΩ typical at 10V - Reduces I²R losses in high-current 12V/24V systems such as BLDC motor inverters.
Repetitive avalanche rated	Validated up to T_jmax - Enables reliable operation in unclamped inductive switching without external snubbers in solenoid drivers.
Fast body diode	t_rr = 21ns typ., Q_rr = 16nC - Minimizes reverse recovery loss and EMI in synchronous buck and LLC resonant converters.
175°C operating junction	Rated for full performance up to 175°C - Supports extended thermal margin in sealed enclosures or high-power density designs.
Lead-free and RoHS compliant	Meets JEDEC J-STD-020 reflow profile - Ensures compatibility with modern Pb-free PCB assembly processes.

Applications

DC-DC Buck Converter

Brushless DC Motor Inverter

Use Scenario: High-current step-down regulator for FPGA core voltage or telecom board supply.

IC Role / Device Role / Timing Role: Synchronous high-side switch in 200–500kHz PWM topology with external gate driver.

Use Value: Low R_DS(on) minimizes conduction loss at 30–45A loads; fast switching reduces dead-time penalty and improves light-load efficiency.

Use Scenario: Phase-leg switch in 3-phase inverter driving 200W–1kW BLDC fan or pump.

IC Role / Device Role / Timing Role: Low-side or high-side power switch with integrated body diode conducting freewheeling current.

Use Value: Controlled Q_rr and low V_SD reduce shoot-through risk and commutation losses during PWM transitions.

Industrial Relay Driver

UPS Inverter Stage

Use Scenario: Solid-state replacement for electromechanical relays controlling 24V/48V solenoids or contactors.

IC Role / Device Role / Timing Role: Unclamped inductive switch handling 50–100ms coil de-energization transients.

Use Value: Repetitive avalanche rating allows safe energy dissipation without external TVS, simplifying BOM and layout.

Use Scenario: Half-bridge output stage in line-interactive UPS delivering 500VA–1.5kVA sine-wave output.

IC Role / Device Role / Timing Role: Hard-switched power switch operating at 20–50kHz with bidirectional current flow via body diode.

Use Value: 175°C T_jmax and low C_oss (250pF) support stable operation under sustained overload and thermal stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF06L	60V V_DSS, 14mΩ R_DS(on), TO-220, logic-level (V_GS(th) = 1–2.5V)	Better gate drive compatibility with 3.3V microcontrollers; slightly higher R_DS(on) increases conduction loss at >40A.	Preferred where low-voltage gate drive is mandatory and 55V margin is sufficient.
IXTH50N50L2	500V V_DSS, 0.1Ω R_DS(on), TO-247, no avalanche rating	Higher voltage rating but significantly higher on-resistance and no repetitive avalanche capability.	Only suitable for high-voltage, lower-current applications where IRFZ46ZPBF's 55V rating is insufficient.

Compared with STP55NF06L and IXTH50N50L2, IRFZ46ZPBF offers optimal balance of low R_DS(on), proven avalanche ruggedness, and thermal reliability at 55V - making it preferred for cost-sensitive, high-current industrial switching where gate drive voltage ≥10V is available.

Availability

IRFZ46ZPBF is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor inverters, industrial relay drivers, and UPS inverter stages requiring stable component supply and long-term production continuity.

Supply support for IRFZ46ZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices and wide-bandgap solutions.

The HEXFET® Power MOSFET product line was engineered for high-efficiency, high-reliability switching in industrial power conversion, motor control, and uninterruptible power systems - emphasizing ruggedness, thermal stability, and manufacturability.

FAQ

Is IRFZ46ZPBF suitable for 3.3V microcontroller gate drive?

No - its gate threshold voltage range is 2.0–4.0V, but full enhancement requires ≥10V V_GS to achieve rated R_DS(on). Driving with only 3.3V results in high on-resistance (>100mΩ), excessive heating, and potential failure. A gate driver (e.g., TC4427) or level-shifter is required for logic-level compatibility.

What is the maximum recommended PCB copper area for TO-220AB thermal performance?

Per IR Application Note AN-994, a 1" × 1" (25.4mm × 25.4mm) FR-4 PCB pad with 2oz copper and thermal vias to inner layers achieves R_θJA ≈ 40°C/W. Larger pads or external heatsinks are required to sustain 51A continuously at ambient >50°C.

Does IRFZ46ZPBF have built-in ESD protection?

No - it lacks integrated gate protection diodes. The gate oxide is highly sensitive to electrostatic discharge. Handling requires grounded wrist straps, anti-static mats, and proper PCB layout (short gate traces, local 10kΩ pulldown resistor) to prevent damage during assembly or operation.

Can IRFZ46ZPBF replace IRFZ44N in existing designs?

Yes - both are TO-220AB N-channel MOSFETs with identical pinout and similar voltage/current ratings. IRFZ46ZPBF offers lower R_DS(on) (13.6mΩ vs. 28mΩ), faster switching, and enhanced avalanche capability, yielding measurable efficiency and thermal improvement without layout changes.

IRFZ46ZPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 51A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 13.6mOhm @ 31A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 46 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1460 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 82W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFZ46ZPBF FAQ

1.How can I place an order for IRFZ46ZPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFZ46ZPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFZ46ZPBF reliable?

The price and inventory of IRFZ46ZPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ46ZPBF is usually 5 days.

3.What payment methods are accepted for IRFZ46ZPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ46ZPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFZ46ZPBF?

IRFZ46ZPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFZ46ZPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFZ46ZPBF?

For technical support, including IRFZ46ZPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ46ZPBF requirements.

6.How does Aetrix verify that IRFZ46ZPBF is sourced from the original manufacturer or authorized distributors?

All IRFZ46ZPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ46ZPBF meets industry standards.

7.What is the process for return or replacement of IRFZ46ZPBF?

All IRFZ46ZPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ46ZPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFZ46ZPBF part is unused and in its original packaging.

Return procedure for IRFZ46ZPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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