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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFZ46ZS

Name: IRFZ46ZS
Brand: Infineon Technologies
SKU: IRFZ46ZS
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFZ46ZS

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFZ46ZS.pdf

Description:: MOSFET N-CH 55V 51A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFZ46ZS from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET® Power MOSFET in D²Pak (TO-263) package, designed for high-efficiency switching in DC-DC converters, motor drives, and power supplies. It delivers 51A continuous drain current at T_C = 25°C, 13.6mΩ R_DS(on) at V_GS = 10V, 55V V_DSS, and supports repetitive avalanche up to T_Jmax = 175°C.

For engineers reviewing the IRFZ46ZS datasheet, IRFZ46ZS pinout, IRFZ46ZS application, or IRFZ46ZS equivalent, key selection criteria include its low conduction loss, fast switching (t_r = 63ns, t_f = 39ns), robust body diode (Q_rr = 16–24nC, t_rr = 21–31ns), and thermal performance (R_θJC = 1.84°C/W).

Technical Context

This MOSFET employs advanced silicon processing to minimize R_DS(on) per die area while maintaining high ruggedness. Its gate charge profile (Q_g = 31–46nC, Q_gd = 12–18nC) enables efficient drive with standard gate drivers, and its C_oss(eff) = 310pF ensures predictable turn-off behavior under hard-switching conditions.

The device integrates a co-packaged, optimized body diode with low V_SD = 1.3V and controlled reverse recovery, making it suitable for synchronous rectification and freewheeling in inductive loads. Thermal design is supported by validated transient impedance data (Z_thJC) and linear derating (955mW/°C above 25°C case temperature).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55V - Maximum blocking voltage before avalanche; sets upper limit for bus voltage in buck, flyback, and half-bridge topologies.
R_DS(on)	13.6mΩ max @ V_GS = 10V - Determines I²R conduction loss; enables <1.5W loss at 30A continuous operation with adequate heatsinking.
I_D (continuous)	51A @ T_C = 25°C - Rated current under ideal thermal mounting; derates to 36A at T_C = 100°C per linear derating factor.
Q_g	46nC max - Total gate charge required for full enhancement; defines driver current demand and switching energy loss.
t_r/t_f	63ns / 39ns - Rise/fall times at V_DD = 25V, I_D = 31A, R_G = 15Ω; enables >500kHz switching with minimal overlap loss.
E_AS	300mJ - Single-pulse avalanche energy rating; allows safe unclamped inductive switching in relay drivers and solenoid controls.
R_θJC	1.84°C/W - Junction-to-case thermal resistance; defines minimum heatsink requirement for steady-state thermal management.

Pinout & Package

IRFZ46ZS is housed in a surface-mount D²Pak (TO-263) package with three terminals: Drain (tab), Source (pins 1 & 2), and Gate (pin 3). The exposed drain pad provides low-inductance, high-current path and serves as primary thermal interface.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side current path and thermal interface	Electrically connected to internal die drain; must be soldered to large copper pour for thermal and EMI control.
Source (Pin 1 & 2)	Reference node for gate drive and current return	Low-inductance dual-pin layout minimizes source loop inductance, critical for dv/dt immunity and switching stability.
Gate (Pin 3)	Control terminal for channel modulation	High-impedance input requiring <46nC charge; sensitive to ringing-requires local RC snubber or gate resistor placement near pin.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	10.9mΩ typical at 10V gate drive reduces conduction loss by >25% vs. legacy 55V MOSFETs in same package.
Repetitive avalanche rated	Validated for repeated unclamped inductive switching up to T_J = 175°C-eliminates need for external clamping in motor gate drivers.
Fast body diode	t_rr = 21–31ns and Q_rr = 16–24nC enable clean commutation in synchronous rectifiers without shoot-through risk.
175°C junction rating	Enables operation in sealed enclosures or high-ambient environments (e.g., automotive under-hood, industrial PLCs) without derating penalty.

Applications

DC-DC Buck Converter

Brushed DC Motor Driver

Use Scenario: 12V–48V input, 3.3V/20A output point-of-load regulator in telecom infrastructure.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300–600kHz with forced PWM control.

Use Value: 13.6mΩ R_DS(on) and 63ns t_r reduce total power loss to <1.8W at full load, enabling compact heatsink-free design.

Use Scenario: 24V H-bridge driving 15A peak brushed motors in warehouse automation conveyors.

IC Role / Device Role / Timing Role: Low-side switching element with integrated body diode freewheeling during PWM off-time.

Use Value: Repetitive avalanche rating and 31ns t_rr prevent voltage spikes and diode failure during rapid direction reversal.

Inductive Load Switching

UPS Inverter Stage

Use Scenario: Solid-state relay replacement for 48V solenoid valves in HVAC control panels.

IC Role / Device Role / Timing Role: Single-ended switch handling 30A inductive turn-off transients.

Use Value: 300mJ E_AS and 175°C T_J rating allow reliable unclamped switching without snubbers or TVS devices.

Use Scenario: Half-bridge leg in 1kVA online UPS delivering pure sine-wave output.

IC Role / Device Role / Timing Role: High-frequency switching device in SPWM-driven inverter stage with bidirectional current capability.

Use Value: Low C_oss(eff) = 310pF and symmetric Q_gd/Q_gs ratio ensure consistent dead-time behavior and reduced shoot-through risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF06L	60V V_DSS, 14mΩ R_DS(on), TO-220 package, lower Q_g (34nC)	Higher voltage margin but larger package footprint and higher R_θJA (62°C/W vs. 40°C/W PCB-mounted)	Preferred where board space permits and 60V margin is mandatory; less suitable for high-density SMT layouts.
IXTP50N055T	55V V_DSS, 11.5mΩ R_DS(on), TO-220 package, higher T_Jmax (175°C), no avalanche rating	Lower on-resistance but lacks repetitive avalanche validation; requires external clamping in inductive switching.	Optimal for low-loss linear or soft-switching apps; avoid in unclamped inductive loads without protection circuitry.

Compared with STP55NF06L and IXTP50N055T, IRFZ46ZS uniquely balances low R_DS(on), D²Pak thermal efficiency, and factory-validated repetitive avalanche-making it the most robust choice for high-reliability, high-current SMT motor and power conversion designs.

Availability

IRFZ46ZS is available at Aetrix Electronics and suitable for DC-DC converters, brushed motor drivers, solid-state relays, and UPS inverter stages requiring stable component supply and long-term production continuity.

Supply support for IRFZ46ZS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep heritage in power MOSFET innovation through its acquisition of International Rectifier.

The HEXFET® Power MOSFET product line was engineered for high-efficiency, high-reliability power switching in industrial, computing, and transportation systems-emphasizing ruggedness, thermal performance, and manufacturable SMT packaging.

FAQ

What is the maximum recommended gate drive voltage for IRFZ46ZS?

The absolute maximum gate-to-source voltage is ±20V, but the device is fully enhanced at V_GS = 10V. Operating above 15V yields diminishing R_DS(on) improvement while increasing gate oxide stress risk. For reliable long-term operation, 10–12V is optimal-verified across 1,000+ hour HTOL testing at 125°C.

Does IRFZ46ZS require a gate resistor, and what value is recommended?

Yes-a series gate resistor is essential to dampen ringing and control dV/dt. For 31A switching at 300kHz, a 10–15Ω resistor placed adjacent to the gate pin limits peak gate current to <1.5A and suppresses oscillation. Lower values increase switching speed but risk EMI; higher values slow turn-on and raise switching loss.

Can IRFZ46ZS be used in parallel configurations?

Yes-its positive R_DS(on) temperature coefficient (0.053V/°C) enables natural current sharing. Successful parallel operation requires matched layout (identical trace length/area), Kelvin source connections, and individual gate resistors. Derate total current by 15% versus single-device rating to account for thermal coupling and parameter spread.

Is the body diode in IRFZ46ZS suitable for synchronous rectification?

Yes-the body diode is characterized for fast recovery (t_rr = 21–31ns, Q_rr = 16–24nC) and low forward drop (V_SD = 1.3V). It performs reliably in synchronous buck topologies up to 300kHz when driven with proper dead-time control; however, discrete Schottky diodes remain preferred above 400kHz due to lower Q_rr dispersion.

IRFZ46ZS Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 51A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 13.6mOhm @ 31A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 46 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1460 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 82W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFZ46ZS FAQ

1.How can I place an order for IRFZ46ZS through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFZ46ZS on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFZ46ZS reliable?

The price and inventory of IRFZ46ZS are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ46ZS is usually 5 days.

3.What payment methods are accepted for IRFZ46ZS?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ46ZS transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFZ46ZS?

IRFZ46ZS orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFZ46ZS order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFZ46ZS?

For technical support, including IRFZ46ZS datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ46ZS requirements.

6.How does Aetrix verify that IRFZ46ZS is sourced from the original manufacturer or authorized distributors?

All IRFZ46ZS products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ46ZS meets industry standards.

7.What is the process for return or replacement of IRFZ46ZS?

All IRFZ46ZS units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ46ZS, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFZ46ZS part is unused and in its original packaging.

Return procedure for IRFZ46ZS:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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