Infineon Technologies IRFZ48VPBF

Overview

IRFZ48VPBF from Infineon Technologies (formerly International Rectifier) is a 60V, 72A N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, optimized for high-efficiency switch-mode power supplies (SMPS), motor drives, and DC-DC converters. It features 12 mΩ R_DS(on) at V_GS = 10 V, 166 mJ single-pulse avalanche energy rating, and 5.3 V/ns peak diode recovery dv/dt - enabling robust operation in inductive switching circuits with fast turn-off and low conduction loss.

For engineers reviewing the IRFZ48VPBF datasheet, IRFZ48VPBF pinout, IRFZ48VPBF application, or IRFZ48VPBF equivalent, key selection criteria include its 60 V V_(BR)DSS, 12 mΩ on-resistance at 43 A/10 V, TO-220AB thermal resistance (R_θJC = 1.0 °C/W), fully rated avalanche capability, and body diode reverse recovery time (t_rr = 70–100 ns) under 72 A IF.

Technical Context

This discrete N-channel MOSFET employs advanced planar HEXFET processing to achieve ultra-low on-resistance per die area while maintaining rugged unclamped inductive switching (UIS) performance. Its gate threshold voltage (2.0–4.0 V) supports standard 5 V and 10 V logic-level drive, and its 110 nC total gate charge reflects moderate drive strength requirements for hard-switched topologies.

The integrated body diode exhibits 2.0 V forward voltage at 72 A and 25 °C, with 155–233 nC reverse recovery charge and 70–100 ns t_rr. Thermal design is enabled by low junction-to-case resistance (1.0 °C/W) and compatibility with flat, greased heatsinks (R_θCS = 0.50 °C/W).

Key Specifications

Pinout & Package

IRFZ48VPBF is housed in a TO-220AB package with isolated tab (drain-connected), standard 3-pin vertical lead configuration, and 1.6 mm minimum creepage distance from case to leads. Mounting torque: 10 lbf·in (1.1 N·m) for 6-32 or M3 screw.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP60NF06 and IXTH72N10L2, IRFZ48VPBF offers the best balance of avalanche ruggedness (166 mJ), proven TO-220 thermal performance (1.0 °C/W), and moderate gate drive demand - making it optimal for cost-sensitive, thermally constrained 60 V industrial SMPS designs.

Availability

IRFZ48VPBF is available at Aetrix Electronics and suitable for switch-mode power supplies, DC motor drives, uninterruptible power systems, and LED constant-current drivers requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFZ48VPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues to manufacture, qualify, and support its legacy HEXFET® power MOSFET portfolio for industrial applications.

The IRFZ48VPBF belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-reliability, medium-voltage (≤100 V) power conversion where avalanche ruggedness, low on-resistance, and TO-220 thermal performance are prioritized over ultra-high-speed switching.

FAQ

Is IRFZ48VPBF suitable for 5 V logic-level gate drive?

No - IRFZ48VPBF has a gate threshold voltage range of 2.0–4.0 V and requires ≥10 V V_GS to achieve its specified 12 mΩ R_DS(on). At 5 V, R_DS(on) rises significantly (>40 mΩ), increasing conduction loss and thermal stress. A gate driver or level shifter is required for microcontroller-based 3.3/5 V systems.

What is the maximum continuous drain current at 85 °C case temperature?

Per the linear derating curve and absolute maximum ratings, IRFZ48VPBF supports 51 A continuous drain current at 100 °C case temperature. At 85 °C, interpolation yields ~59 A, assuming R_DS(on) remains stable and heatsink thermal resistance maintains junction temperature ≤175 °C.

Does IRFZ48VPBF have a built-in ESD protection diode on the gate?

No - IRFZ48VPBF lacks integrated gate ESD protection. Its gate oxide is susceptible to damage from static discharge. Recommended handling includes grounded wrist straps, conductive foam storage, and series gate resistors (≥10 Ω) to limit transient current during board assembly and operation.

Can IRFZ48VPBF replace IRFZ44N in existing designs?

Yes - IRFZ48VPBF is a direct upgrade to IRFZ44N: both are TO-220AB N-channel MOSFETs with identical pinout and footprint. IRFZ48VPBF offers lower R_DS(on) (12 mΩ vs. 17.5 mΩ), higher ID (72 A vs. 49 A), and improved avalanche rating (166 mJ vs. 65 mJ), enabling higher efficiency and reliability without layout changes.