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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFZ48Z

Name: IRFZ48Z
Brand: Infineon Technologies
SKU: IRFZ48Z
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFZ48Z

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFZ48Z.pdf

Description:: MOSFET N-CH 55V 61A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFZ48Z from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, rated for 55V V_DSS, 11 mΩ R_DS(on) at V_GS = 10 V, and 61 A continuous drain current at T_C = 25°C. It features 175°C maximum junction temperature, fast switching (t_d(on) = 15 ns, t_f = 39 ns), and 100% production-tested repetitive avalanche capability up to I_AS = 37 A - used in DC-DC synchronous rectification, motor drive half-bridges, and high-current power supplies.

For engineers reviewing the IRFZ48Z datasheet, IRFZ48Z pinout, IRFZ48Z application, or IRFZ48Z equivalent, key selection criteria include verified R_DS(on) ≤ 11 mΩ at 10 V gate drive, unclamped inductive avalanche rating (E_AS = 73 mJ), thermal resistance R_θJC = 1.64 °C/W, body diode reverse recovery charge Q_rr = 13–20 nC, and gate charge Q_g = 43–64 nC - all critical for high-efficiency, thermally constrained switch-mode designs.

Technical Context

This MOSFET employs advanced silicon processing to minimize conduction loss while maintaining robust safe operating area (SOA) across pulse widths from 10 µs to 100 ms. Its 175°C junction rating enables operation in high-ambient environments without derating penalties typical of lower-T_j devices.

The device integrates a low-V_SD (≤1.3 V), fast-recovery body diode (t_rr = 20–31 ns, Q_rr = 13–20 nC) and exhibits stable R_DS(on) over temperature (normalized to 2.5× at 175°C). Gate threshold voltage V_GS(th) is tightly specified (2.0–4.0 V), supporting reliable turn-on with standard 5 V or 10 V logic-level drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage before avalanche onset; defines upper limit for bus voltage in buck converters and H-bridge motor drives.
R_DS(on)	8.6–11 mΩ @ V_GS = 10 V - Directly determines I²R conduction loss; enables <1.5 W dissipation at 61 A with adequate heatsinking.
I_D (continuous)	61 A @ T_C = 25°C - Confirmed silicon-limited current; usable up to 43 A at T_C = 100°C per derating curve (Fig. 9).
Q_g	43–64 nC - Total gate charge required for full turn-on; sets minimum driver current (e.g., ≥4.3 A peak for 10 ns rise time).
E_AS	73 mJ - Single-pulse avalanche energy rating; allows safe operation during inductive switching transients without snubbers.
t_r/t_f	69 ns / 39 ns - Rise/fall times measured at V_DD = 25 V, I_D = 37 A; enables >1 MHz hard-switching with controlled EMI.
R_θJC	1.64 °C/W - Junction-to-case thermal resistance; enables direct mounting to heatsink with predictable ΔT_J-C under steady-state load.

Pinout & Package

IRFZ48Z is housed in a TO-220AB package with isolated tab (drain-connected), standard 3-pin through-hole configuration, and 1.1 N·m mounting torque specification.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal, electrically connected to metal tab	Must be electrically isolated from heatsink unless system ground reference permits; primary path for high-current return in half-bridge topologies.
Source	Reference node for gate drive and current sensing	Serves as common return for gate driver IC and shunt resistor; low-inductance layout critical due to LS = 7.5 nH internal source inductance.
Gate	Control electrode for channel modulation	High-impedance input requiring low-impedance driver (RG ≤ 12 Ω recommended); Miller charge Q_gd = 16–24 nC dominates switching transitions.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	8.6 mΩ typ. @ V_GS = 10 V - Reduces conduction loss by >30% vs. legacy 55 V MOSFETs, enabling higher efficiency in 12–48 V systems.
175°C junction rating	Rated continuous operation up to T_J = 175°C - Eliminates thermal derating in sealed enclosures and automotive under-hood applications.
Repetitive avalanche capability	100% tested to I_AS = 37 A, E_AS = 73 mJ - Enables robustness in unclamped inductive loads (e.g., solenoid drivers) without external protection.
Fast body diode	t_rr = 20–31 ns, Q_rr = 13–20 nC - Minimizes reverse recovery loss in synchronous rectifiers and freewheeling paths.
Dynamic dv/dt rating	Specified for high-noise industrial environments - ensures immunity to false turn-on during rapid voltage transients on drain node.

Applications

Motor Drive Half-Bridge

DC-DC Synchronous Rectifier

Use Scenario: 24 V brushed DC motor control in industrial actuators with PWM frequency up to 20 kHz.

IC Role / Device Role / Timing Role: Low-side switching element in half-bridge topology; handles bidirectional current during regenerative braking via body diode conduction.

Use Value: 11 mΩ R_DS(on) limits conduction loss to <1.4 W at 61 A, while 175°C rating sustains operation during stall conditions without thermal shutdown.

Use Scenario: Secondary-side synchronous rectification in 48 V input telecom DC-DC converters (e.g., 48 V → 12 V, 100 A).

IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diode; driven complementary to primary-side switch with precise timing to avoid shoot-through.

Use Value: Q_rr = 13–20 nC and t_rr = 20–31 ns reduce reverse recovery loss by >60% vs. 40 V Schottky, improving efficiency by 0.8–1.2% at full load.

High-Current Power Supply Switch

Uninterruptible Power Supply (UPS) Inverter Stage

Use Scenario: Output OR-ing and hot-swap control in redundant 12 V/50 A server power supplies.

IC Role / Device Role / Timing Role: Load switch with fast turn-off (t_f = 39 ns) to isolate faulted rails within <100 ns.

Use Value: 61 A continuous rating and 240 A pulsed (I_DM) support inrush current handling; R_DS(on) stability over temperature ensures consistent current sharing across parallel devices.

Use Scenario: Full-bridge inverter stage in 1 kVA line-interactive UPS converting 48 V battery to 230 V AC.

IC Role / Device Role / Timing Role: High-side and low-side switch in leg configuration; operates with 50–60 Hz fundamental plus high-frequency PWM carrier.

Use Value: Repetitive avalanche rating (E_AR = 300 mJ at T_J = 25°C) absorbs energy from transformer leakage inductance during dead-time transitions without snubber circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF06L	R_DS(on) = 14 mΩ @ 10 V, V_DSS = 60 V, Q_g = 65 nC, TO-220 package	Higher R_DS(on) increases conduction loss by ~27%; slower switching (t_f = 60 ns) raises switching loss at >100 kHz	Acceptable where thermal margin exists and cost sensitivity outweighs efficiency targets.
IXTH50N50L2	V_DSS = 500 V, R_DS(on) = 100 mΩ @ 10 V, TO-247 package, no avalanche rating	Higher voltage rating irrelevant for 55 V systems; 10× higher R_DS(on) causes >9× conduction loss; lacks avalanche ruggedness	Not recommended - oversized voltage rating compromises efficiency and adds unnecessary cost and footprint.

Compared with STP55NF06L and IXTH50N50L2, IRFZ48Z delivers optimal balance of low R_DS(on), fast switching, and verified avalanche robustness for 48–55 V industrial power stages - making it superior for thermally constrained, high-reliability applications where loss minimization and transient resilience are co-prioritized.

Availability

IRFZ48Z is available at Aetrix Electronics and suitable for motor drive half-bridges, DC-DC synchronous rectifiers, and high-current power supply switches requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRFZ48Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap power devices.

IRFZ48Z belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-current, medium-voltage switching in industrial motor controls, power supplies, and uninterruptible power systems - emphasizing ruggedness, thermal reliability, and production-tested avalanche performance.

FAQ

Is IRFZ48Z suitable for logic-level gate drive (e.g., 3.3 V or 5 V microcontroller output)?

No - IRFZ48Z has a gate threshold voltage range of 2.0–4.0 V and requires ≥10 V V_GS to achieve its specified 11 mΩ R_DS(on). At 5 V, R_DS(on) rises to >40 mΩ, increasing conduction loss significantly. A gate driver IC (e.g., TC4420) or level-shifting circuit is mandatory for reliable operation.

What is the maximum allowable case temperature for continuous 61 A operation?

The 61 A rating applies only at T_C = 25°C. As case temperature increases, current must be linearly derated: from Fig. 9, maximum continuous I_D drops to 43 A at T_C = 100°C and to zero at T_C = 175°C. Derating factor is 0.36 A/°C above 25°C.

Does IRFZ48Z require a gate resistor, and what value is recommended?

Yes - a gate resistor is essential to control dV/dt and prevent oscillation. For hard-switching at ≤100 kHz, R_G = 12 Ω is recommended (per Fig. 6 and switching waveforms). Lower values (≤5 Ω) increase EMI risk; higher values (>25 Ω) degrade t_r/t_f and raise switching loss.

Can IRFZ48Z be paralleled with identical units for higher current capacity?

Yes - its positive R_DS(on) temperature coefficient (Fig. 10) ensures inherent current sharing. Layout must match source inductance (LS = 7.5 nH) and gate loop impedance across all paralleled devices; use Kelvin-source connections and individual gate resistors to maintain symmetry.

IRFZ48Z Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 61A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 11mOhm @ 37A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 64 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1720 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 91W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFZ48Z FAQ

1.How can I place an order for IRFZ48Z through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFZ48Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFZ48Z reliable?

The price and inventory of IRFZ48Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ48Z is usually 5 days.

3.What payment methods are accepted for IRFZ48Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ48Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFZ48Z?

IRFZ48Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFZ48Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFZ48Z?

For technical support, including IRFZ48Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ48Z requirements.

6.How does Aetrix verify that IRFZ48Z is sourced from the original manufacturer or authorized distributors?

All IRFZ48Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ48Z meets industry standards.

7.What is the process for return or replacement of IRFZ48Z?

All IRFZ48Z units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ48Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFZ48Z part is unused and in its original packaging.

Return procedure for IRFZ48Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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