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Infineon Technologies IRFZ48ZPBF
- Part No.:
- IRFZ48ZPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IRFZ48ZPBF.pdf
- Description:
- MOSFET N-CH 55V 61A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:4,585
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Product details
Overview
IRFZ48ZPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, rated for 55V VDSS, 11 mΩ RDS(on) at VGS = 10 V, and 61 A continuous drain current at TC = 25°C. It delivers fast switching, 175°C junction operation, and tested repetitive avalanche capability up to IAS = 37 A - ideal for high-efficiency DC-DC converters and motor drive half-bridges.
For engineers reviewing the IRFZ48ZPBF datasheet, IRFZ48ZPBF pinout, IRFZ48ZPBF application, or IRFZ48ZPBF equivalent, key selection criteria include its low RDS(on) at 10 V gate drive, 43 nC total gate charge, 1.64 °C/W junction-to-case thermal resistance, and body diode recovery time of 20–31 ns - critical for synchronous rectification and hard-switched topologies.
Technical Context
This MOSFET employs advanced silicon processing to minimize conduction loss while maintaining robust avalanche ruggedness. Its gate threshold voltage (2.0–4.0 V) enables compatibility with standard 5 V and 10 V logic-level drivers, and its 160 pF Crss supports stable high-frequency operation with controlled Miller effect.
The device integrates a co-packaged intrinsic body diode with 1.3 V forward voltage at 37 A and 13–20 nC reverse recovery charge. Thermal design is enabled by validated transient impedance curves (Fig. 11) and linear derating (955 mW/°C above 25°C), supporting reliable operation under pulsed load conditions up to 240 A peak source current.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 55 V - maximum blocking voltage before avalanche; defines safe operating range in 48 V bus systems |
| RDS(on) | 8.6–11 mΩ @ VGS = 10 V - determines conduction loss in high-current paths (e.g., 3.5 W loss at 61 A) |
| ID (continuous) | 61 A @ TC = 25°C - usable in heatsink-mounted power stages without forced air |
| Qg | 43–64 nC - sets gate driver power requirement and switching speed limit in 100–500 kHz designs |
| trr | 20–31 ns - enables efficient body-diode commutation in non-synchronous buck or flyback converters |
| RθJC | 1.64 °C/W - allows direct thermal interface to heatsink; enables 100 W dissipation with ≤164°C ΔT |
| EAS | 73 mJ (tested) - quantifies unclamped inductive switching margin in motor gate-drive or solenoid control |
Pinout & Package
IRFZ48ZPBF uses the industry-standard TO-220AB package with isolated tab (drain-connected), 3-pin through-hole mounting, and 1.1 N·m recommended screw torque. The case is electrically connected to the drain terminal.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main high-side current path and thermal interface | Electrically tied to metal tab; requires insulating washer if mounted to grounded heatsink |
| Source | Reference node for gate drive and current return path | Low-inductance connection essential for minimizing switching oscillation and dV/dt-induced turn-on |
| Gate | Control electrode for channel modulation | High-impedance input requiring <100 nA leakage handling; sensitive to ESD and layout parasitics |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 8.6 mΩ typical at 10 V gate drive - reduces conduction loss by >30% vs. legacy 55 V MOSFETs in same package |
| 175°C max junction temperature | Enables operation in sealed enclosures or high-ambient environments without derating |
| Repetitive avalanche rated | Tested to 37 A IAS with full thermal validation - supports robust inductive load switching without snubbers |
| Fast switching with low Qgd/Qg | 16–24 nC Miller charge / 43–64 nC total charge - improves efficiency in 200+ kHz SMPS designs |
| Lead-free and RoHS-compliant | Meets IPC-J-STD-020 moisture sensitivity level 1 - eliminates pre-bake requirements for PCB assembly |
Applications
| DC-DC Converter Primary Switch | Brushed DC Motor Half-Bridge |
|---|---|
Use Scenario: High-current buck converter in telecom power shelf delivering 12 V/30 A from 48 V input. IC Role / Device Role / Timing Role: Main high-side switching element operating at 250 kHz with synchronous rectification disabled. Use Value: 11 mΩ RDS(on) limits conduction loss to 9.9 W at full load; 20 ns trr prevents shoot-through during dead-time recovery. | Use Scenario: 24 V battery-powered industrial actuator driving 15 A stall-current brushed motor. IC Role / Device Role / Timing Role: Low-side switch in H-bridge configuration with PWM frequency of 15 kHz. Use Value: 175°C rating ensures reliability during intermittent stall events; 240 A pulsed source current handles motor inrush without failure. |
| Inductive Load Driver (Solenoid/Valve) | UPS Inverter Output Stage |
Use Scenario: 48 V automotive solenoid control module switching 8 A loads with 10 ms on-time. IC Role / Device Role / Timing Role: Unclamped inductive switch with integrated avalanche energy absorption. Use Value: 73 mJ EAS rating safely clamps L·di/dt spikes up to 920 A/µs without external TVS or snubber. | Use Scenario: 1 kVA line-interactive UPS using full-bridge inverter to generate 230 VAC from 48 VDC bus. IC Role / Device Role / Timing Role: High-side switch in phase-leg topology with 16 kHz SPWM modulation. Use Value: 1.64 °C/W RθJC enables direct heatsink mounting; 61 A ID supports 2× peak output current margin. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP55NF06L | 60 V VDSS, 14 mΩ RDS(on), TO-220FP package (insulated tab) | Higher RDS(on) increases conduction loss; insulated tab simplifies heatsink isolation | Prefer when electrical isolation of drain from heatsink is mandatory and 5 V gate drive is used |
| IXTH50N50L2 | 500 V VDSS, 100 mΩ RDS(on), TO-247 package, higher Qg (120 nC) | Designed for high-voltage flyback/LLC; unsuitable for 48 V systems due to excessive RDS(on) | Only consider for 400 V bus designs where voltage margin outweighs efficiency penalty |
Compared with STP55NF06L and IXTH50N50L2, IRFZ48ZPBF offers optimal balance of low RDS(on), proven avalanche ruggedness, and TO-220AB thermal performance for 48 V industrial power stages - making it superior for cost-sensitive, thermally constrained applications below 60 V.
Availability
IRFZ48ZPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, uninterruptible power supplies, and solenoid control systems requiring stable component supply and long-term industrial lifecycle support.
Supply support for IRFZ48ZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensor, and automotive ICs with strong vertical integration in silicon process technology.
This device belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered specifically for high-current, medium-voltage industrial switching applications where thermal robustness and avalanche reliability are mission-critical.
FAQ
What is the maximum gate-source voltage rating for IRFZ48ZPBF?
The absolute maximum VGS is ±20 V. Operation beyond this risks permanent gate oxide damage. Recommended gate drive is 10 V for full RDS(on) specification and 4.5–5.5 V for logic-level compatibility. Gate resistors must be selected to limit peak current during switching transients, especially given its 43 nC total gate charge.
Does IRFZ48ZPBF have a built-in body diode, and what are its key parameters?
Yes, it integrates a monolithic N-channel body diode with 1.3 V forward voltage at 37 A, 20–31 ns reverse recovery time, and 13–20 nC reverse recovery charge. This diode is rated for 61 A continuous source current and 240 A pulsed current, enabling use in freewheeling, synchronous rectification, and bidirectional current paths without external diodes.
Can IRFZ48ZPBF be used in parallel configurations?
Yes, but only with careful attention to gate drive matching, current-sharing resistors, and symmetrical PCB layout. Its positive RDS(on) temperature coefficient (1.5× increase from 25°C to 175°C) provides inherent current balancing, but mismatched gate delays or thermal gradients can cause uneven stress. Use individual gate resistors and Kelvin-source connections for best results.
Is IRFZ48ZPBF suitable for automotive applications per AEC-Q101?
No - IRFZ48ZPBF is not AEC-Q101 qualified. While it operates up to 175°C and passes industrial reliability tests, it lacks the extended temperature cycling, humidity testing, and failure analysis required for automotive qualification. For automotive 48 V systems, consider Infineon's AEC-Q101-qualified OptiMOS™ 5 series instead.
IRFZ48ZPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 61A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 11mOhm @ 37A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 64 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1720 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 91W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRFZ48ZPBF FAQ
1.How can I place an order for IRFZ48ZPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFZ48ZPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFZ48ZPBF reliable?
The price and inventory of IRFZ48ZPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ48ZPBF is usually 5 days.
3.What payment methods are accepted for IRFZ48ZPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ48ZPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFZ48ZPBF?
IRFZ48ZPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFZ48ZPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFZ48ZPBF?
For technical support, including IRFZ48ZPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ48ZPBF requirements.
6.How does Aetrix verify that IRFZ48ZPBF is sourced from the original manufacturer or authorized distributors?
All IRFZ48ZPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ48ZPBF meets industry standards.
7.What is the process for return or replacement of IRFZ48ZPBF?
All IRFZ48ZPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ48ZPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFZ48ZPBF part is unused and in its original packaging.
Return procedure for IRFZ48ZPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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