Infineon Technologies IRFZ48ZS

Overview

IRFZ48ZS from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET® Power MOSFET in D²Pak (TO-263) package, rated for 55V V_DSS, 11 mΩ R_DS(on) at V_GS = 10 V, and 61 A continuous drain current at T_C = 25°C. It features 175°C maximum junction temperature, fast switching (t_r = 69 ns, t_f = 39 ns), and 100% production-tested repetitive avalanche capability up to I_AS = 37 A - used in high-efficiency DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRFZ48ZS datasheet, IRFZ48ZS pinout, IRFZ48ZS application, or IRFZ48ZS equivalent, key selection criteria include its low R_DS(on) at 10 V gate drive, validated unclamped inductive avalanche performance, thermal resistance R_θJC = 1.64 °C/W, and body diode recovery charge Q_rr = 13–20 nC - critical for synchronous rectification and hard-switched topologies.

Technical Context

This MOSFET employs advanced silicon processing to minimize conduction loss while maintaining robust safe operating area (SOA) across pulse widths from 10 µs to 100 ms. Its gate charge profile (Q_g = 43–64 nC, Q_gd = 16–24 nC) supports efficient 100–500 kHz switching in buck converters and H-bridge inverters with standard 12 V gate drivers.

The integrated body diode exhibits V_SD ≤ 1.3 V at 37 A and t_rr = 20–31 ns with Q_rr = 13–20 nC, enabling reliable freewheeling in non-synchronous topologies without external Schottky supplementation. Repetitive avalanche operation is thermally limited and validated per Fig. 15–16 under defined L = 0.11 mH, R_G = 25 Ω, and ∆T_J constraints.

Key Specifications

Pinout & Package

D²Pak (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (Drain, Gate, Source) with Drain tab electrically connected to pins 1 and 2.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP55NF06L and IXTH50N50L2, IRFZ48ZS uniquely balances 55 V rating, sub-12 mΩ on-resistance, 100% tested avalanche, and D²Pak thermal performance - making it optimal for compact, high-reliability 48 V power stages where both efficiency and fault tolerance are design-critical.

Availability

IRFZ48ZS is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, and uninterruptible power supplies requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFZ48ZS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with core expertise in silicon and wide-bandgap device design.

The HEXFET® Power MOSFET product line was developed for high-efficiency, high-reliability power conversion in industrial motor control, renewable energy inverters, and server power supplies - emphasizing low R_DS(on), rugged avalanche behavior, and thermal robustness.

FAQ

What is the maximum gate-source voltage rating for IRFZ48ZS?

The absolute maximum V_GS is ±20 V, with recommended operating range of ±12 V for reliable long-term performance. Exceeding ±20 V risks permanent gate oxide damage. The threshold voltage V_GS(th) is 2.0–4.0 V at 250 µA, and gate drive must provide ≥10 V to achieve specified R_DS(on) of 11 mΩ.

Does IRFZ48ZS require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to control dV/dt and prevent oscillation. For 12 V gate drive and R_G = 12 Ω (per Fig. 18a test condition), turn-on delay is 15 ns and rise time is 69 ns. Values between 5 Ω and 22 Ω balance switching speed and EMI; lower values increase peak gate current (I_G(peak) ≈ 1 A) and risk ringing.

Can IRFZ48ZS be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (Fig. 10 shows ~2× increase from 25°C to 175°C) enables inherent current sharing. Successful parallel operation requires matched layout (equal trace inductance), shared gate drive with local gate resistors, and thermal coupling via common heatsink to maintain uniform junction temperature across devices.

Is the body diode in IRFZ48ZS suitable for synchronous rectification?

No - the body diode is optimized for freewheeling, not synchronous rectification. Its Q_rr = 13–20 nC and t_rr = 20–31 ns cause significant reverse recovery loss at >200 kHz. For synchronous rectification, use a dedicated low-Q_rr MOSFET or external Schottky diode; IRFZ48ZS is best applied as the main switching FET with separate rectification.