My Inquiry
My Account
Infineon Technologies IRFZ48ZSPBF
- Part No.:
- IRFZ48ZSPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRFZ48ZSPBF.pdf
- Description:
- MOSFET N-CH 55V 61A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:6,912
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRFZ48ZSPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET® Power MOSFET in D2Pak (TO-263) package, rated for 55 V VDSS, 11 mΩ RDS(on) at VGS = 10 V, and 61 A continuous drain current at TC = 25°C. It features 175°C maximum junction temperature, fast switching (tr = 69 ns, tf = 39 ns), and 100% production-tested repetitive avalanche capability up to IAS = 37 A - used in high-efficiency DC-DC converters and motor drive half-bridges.
For engineers reviewing the IRFZ48ZSPBF datasheet, IRFZ48ZSPBF pinout, IRFZ48ZSPBF application, or IRFZ48ZSPBF equivalent, key selection criteria include its low RDS(on) at 10 V gate drive, robust 300 mJ single-pulse avalanche energy rating, body diode reverse recovery charge (Qrr = 13–20 nC), and thermal resistance RθJC = 1.64°C/W for heatsink-coupled power stage designs.
Technical Context
This MOSFET employs advanced silicon process technology to minimize conduction loss while maintaining high dv/dt immunity and stable threshold voltage (VGS(th) = 2.0–4.0 V). Its gate charge profile (Qg = 43–64 nC, Qgd = 16–24 nC) supports efficient hard-switching in synchronous buck and H-bridge topologies operating up to 200 kHz.
The integrated body diode exhibits low forward voltage (VSD ≤ 1.3 V at 37 A) and fast reverse recovery (trr = 20–31 ns, Qrr = 13–20 nC), enabling reliable freewheeling in inductive loads without external Schottky supplementation under constrained PCB thermal conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 55 V - Maximum blocking voltage before avalanche onset; defines safe operation in 48 V bus systems with transient margin. |
| RDS(on) | 8.6–11 mΩ @ VGS = 10 V - Enables ≤0.4 W conduction loss at 61 A, critical for thermally constrained power stages. |
| ID (continuous) | 61 A @ TC = 25°C - Sustains high-current load switching when mounted on adequately sized heatsinks. |
| Qg | 43–64 nC - Determines gate driver power requirement and switching loss; compatible with standard 1–2 A peak drivers. |
| EAS | 300 mJ (tested) - Guarantees unclamped inductive switching survival in motor control fault conditions without derating. |
| RθJC | 1.64°C/W - Enables precise junction temperature prediction when case temperature is monitored via heatsink sensor. |
| tr/tf | 69 ns / 39 ns - Supports <200 kHz PWM frequencies with minimal overlap loss in hard-switched converters. |
Pinout & Package
IRFZ48ZSPBF is housed in a surface-mount D2Pak (TO-263) package with isolated tab. The three terminals are arranged in standard G-S-D order (left-to-right when viewed from top with marking side up and leads facing downward).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate (G) | Control electrode | Receives 10 V logic-level gate drive; requires <64 nC charge to fully enhance; Miller plateau occurs near 4.5 V. |
| Source (S) | Power return path & reference node | Common node for load current return and gate drive reference; internal source inductance LS = 7.5 nH affects switching ringing. |
| Drain (D) | Main power output terminal | Connected to high-side switch node or bus rail; tab is electrically connected to Drain - must be insulated from heatsink unless floating. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 8.6 mΩ typical enables <0.35 W conduction loss at 61 A, reducing heatsink size in 48 V industrial supplies. |
| 175°C max junction temperature | Permits operation in sealed enclosures or high-ambient environments without forced air cooling. |
| 100% tested repetitive avalanche | Validated up to IAS = 37 A with L = 0.11 mH, ensuring reliability in motor phase-leg short-circuit events. |
| Fast body diode recovery | Qrr = 13–20 nC and trr = 20–31 ns reduce shoot-through risk and EMI in synchronous rectification. |
| Dynamic dv/dt rating | Immunity to false turn-on during high-slew-rate transients (>50 V/ns), critical in high-speed inverter gate drivers. |
Applications
| Motor Drive Half-Bridge | DC-DC Synchronous Buck Converter |
|---|---|
Use Scenario: Driving brushed DC or BLDC motor phases in 24–48 V industrial actuators with PWM frequencies up to 20 kHz. IC Role / Device Role / Timing Role: High-side or low-side switching element in H-bridge topology; handles bidirectional current with body diode freewheeling. Use Value: Low RDS(on) minimizes I²R heating during 61 A stall currents; 175°C rating avoids thermal shutdown in enclosed gearmotor housings. |
Use Scenario: Primary switching FET in 48 V input → 12 V/30 A output telecom or server POL converter. IC Role / Device Role / Timing Role: High-side synchronous rectifier with gate-driven body diode commutation during dead-time intervals. Use Value: Qrr = 13–20 nC and fast tr/tf suppress voltage spikes and reduce EMI filtering burden at 200 kHz switching. |
| Uninterruptible Power Supply (UPS) Inverter | Industrial Solid-State Relay (SSR) |
Use Scenario: Output stage switching in 1 kVA offline UPS inverters converting 350 V DC bus to 230 V AC sine-wave output. IC Role / Device Role / Timing Role: Low-side switch in full-bridge inverter leg; conducts 37 A RMS with 100% duty-cycle capability at elevated ambient. Use Value: RθJC = 1.64°C/W allows direct heatsink mounting with predictable thermal rise; avalanche rating absorbs transformer leakage energy during fault clearing. |
Use Scenario: Zero-crossing–free AC load switching in programmable logic controller (PLC) output modules driving solenoids and contactors. IC Role / Device Role / Timing Role: Isolated high-current solid-state switch replacing electromechanical relays; operated with optocoupled gate drive. Use Value: 55 V VDSS safely blocks 48 V control bus transients; 61 A ID supports >20 A resistive loads with 2× safety margin. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP60NF06 | RDS(on) = 12 mΩ @ 10 V; TO-220 package; no production-tested avalanche rating | Lacks guaranteed repetitive avalanche performance; higher RθJA limits power density in compact layouts | Acceptable where avalanche stress is absent and through-hole mounting is preferred |
| IXTP50N055 | RDS(on) = 5.5 mΩ @ 10 V; TO-220 package; 150°C TJ max; EAS = 220 mJ (typ) | Lower on-resistance but reduced thermal margin and lower avalanche energy than IRFZ48ZSPBF | Better for ultra-low-loss 5 V gate drive systems; less suitable for 175°C ambient or high-energy fault conditions |
Compared with STP60NF06 and IXTP50N055, IRFZ48ZSPBF uniquely balances low RDS(on), industry-leading 175°C operation, and production-validated avalanche robustness - making it optimal for thermally aggressive, fault-tolerant industrial power stages where reliability outweighs marginal RDS(on) reduction.
Availability
IRFZ48ZSPBF is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, and industrial solid-state relays requiring stable component supply across extended product lifecycles.
Supply support for IRFZ48ZSPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices.
This device belongs to Infineon's legacy HEXFET® Power MOSFET family, engineered for high-current, high-reliability switching in industrial motor control, UPS, and power conversion systems demanding ruggedness and thermal resilience.
FAQ
Is IRFZ48ZSPBF suitable for 5 V gate drive applications?
No - IRFZ48ZSPBF has a gate threshold voltage range of 2.0–4.0 V and is specified for RDS(on) at VGS = 10 V. At 5 V, RDS(on) rises significantly (≥30 mΩ), increasing conduction loss and thermal stress. It requires a 10 V minimum gate drive for full performance.
What is the maximum recommended PCB copper area for IRFZ48ZSPBF in D2Pak package?
For optimal thermal performance, Infineon recommends a minimum 1" × 1" (25.4 mm × 25.4 mm) copper pour on FR-4 PCB with ≥2 oz copper thickness and multiple thermal vias under the drain tab. This achieves RθJA ≈ 40°C/W, per datasheet Figure 12a.
Does IRFZ48ZSPBF have a built-in ESD protection diode on the gate?
No - the device lacks integrated gate ESD protection. External Zener clamping (e.g., 12 V TVS between gate and source) is required in systems exposed to handling or system-level ESD per IEC 61000-4-2, especially when gate traces exceed 2 cm.
Can IRFZ48ZSPBF replace IRFZ44N in existing designs?
Yes - with design verification. IRFZ48ZSPBF offers lower RDS(on) (11 mΩ vs. 17.5 mΩ), higher ID (61 A vs. 49 A), and superior avalanche rating (300 mJ vs. 190 mJ), but shares identical D2Pak footprint and pinout. Gate charge is slightly higher (64 nC vs. 54 nC), requiring driver validation.
IRFZ48ZSPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 61A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 11mOhm @ 37A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 64 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1720 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 91W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRFZ48ZSPBF FAQ
1.How can I place an order for IRFZ48ZSPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFZ48ZSPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFZ48ZSPBF reliable?
The price and inventory of IRFZ48ZSPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ48ZSPBF is usually 5 days.
3.What payment methods are accepted for IRFZ48ZSPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ48ZSPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFZ48ZSPBF?
IRFZ48ZSPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFZ48ZSPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFZ48ZSPBF?
For technical support, including IRFZ48ZSPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ48ZSPBF requirements.
6.How does Aetrix verify that IRFZ48ZSPBF is sourced from the original manufacturer or authorized distributors?
All IRFZ48ZSPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ48ZSPBF meets industry standards.
7.What is the process for return or replacement of IRFZ48ZSPBF?
All IRFZ48ZSPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ48ZSPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFZ48ZSPBF part is unused and in its original packaging.
Return procedure for IRFZ48ZSPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRFZ48ZSPBF Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…
