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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRL1004

Name: IRL1004
Brand: Infineon Technologies
SKU: IRL1004
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRL1004

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRL1004.pdf

Description:: MOSFET N-CH 40V 130A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:4,924

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Product details

Overview

IRL1004PbF from Infineon Technologies (formerly International Rectifier) is a logic-level N-channel enhancement-mode power MOSFET in TO-220AB package, rated for 40 V V_DS, 130 A continuous drain current at T_C = 25°C, and ultra-low 6.5 mΩ R_DS(on) at V_GS = 10 V. It features fully avalanche-rated ruggedness, fast switching (t_r = 210 ns), and 175°C maximum junction temperature-optimized for high-current DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRL1004PbF datasheet, IRL1004PbF pinout, IRL1004PbF application, or IRL1004PbF equivalent, key selection criteria include its logic-level gate drive compatibility (V_GS(th) = 1.0–2.0 V), low thermal resistance (R_θJC = 0.75 °C/W), and body diode performance (t_rr = 78–120 ns, Q_rr = 180–270 nC) in synchronous rectification and H-bridge topologies.

Technical Context

This fifth-generation HEXFET® device uses advanced silicon processing to minimize on-resistance per die area while maintaining robust safe operating area (SOA) up to 10 ms at 40 V. Its gate charge profile (Q_g = 100 nC, Q_gd = 43 nC) supports efficient PWM control with moderate gate driver strength.

The integrated body diode exhibits controlled reverse recovery (dv/dt rating = 5.0 V/ns) and low forward voltage (V_SD = 1.3 V at 78 A), enabling reliable unclamped inductive switching in motor drives without external freewheeling diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage in high-side or low-side switch configurations
R_DS(on) @ V_GS = 10 V	6.5 mΩ - Enables ≤10 W conduction loss at 130 A, critical for high-efficiency power stages
I_D @ T_C = 25°C	130 A - Continuous current capability with heatsink; derates linearly at 1.3 W/°C above 25°C
Q_g	100 nC - Total gate charge determines required gate driver peak current for <100 ns switching transitions
t_r/t_f	210 ns / 14 ns - Fast rise/fall times reduce switching losses in 20–100 kHz SMPS and BLDC inverters
E_AS	700 mJ - Single-pulse avalanche energy rating ensures survivability during inductive load turn-off transients
V_GS(th)	1.0–2.0 V - Logic-level threshold enables direct drive from 3.3 V or 5 V microcontrollers without level-shifting

Pinout & Package

IRL1004PbF is housed in a through-hole TO-220AB package with isolated tab (drain-connected), optimized for mechanical mounting to heatsinks and industrial PCB layouts. Thermal resistance from junction to case is 0.75 °C/W, supporting up to 200 W power dissipation at T_C = 25°C.

Pin/Terminal	Circuit Role	Design Meaning
1 - Gate	Control electrode	Receives logic-level voltage (0–16 V); requires <100 nC total charge for full enhancement
2 - Drain	High-side current path	Internally connected to metal tab; electrically tied to heatsink-requires isolation if heatsink is grounded
3 - Source	Reference node / return path	Serves as common reference for gate drive and load current; low-inductance layout essential for EMI control
4 - Drain	Secondary drain connection	Redundant drain terminal for improved current sharing and reduced package inductance in high-di/dt applications

Key Features

Feature	Design Value
Ultra-low R_DS(on)	6.5 mΩ at V_GS = 10 V reduces conduction loss by >40% vs. legacy 40 V MOSFETs in 12 V bus systems
Fully avalanche rated	700 mJ single-pulse energy withstand enables robust operation in unclamped inductive switching (e.g., relay drivers, solenoid controls)
Logic-level gate drive	V_GS(th) ≤ 2.0 V allows direct interface with 3.3 V FPGA I/O or ARM Cortex-M GPIO without external level shifters
Fast body diode	t_rr = 78 ns and Q_rr = 180 nC minimize reverse recovery loss in synchronous buck and half-bridge topologies
TO-220AB thermal design	R_θJC = 0.75 °C/W and flat greased case-to-sink resistance of 0.50 °C/W support stable thermal management up to 175°C junction

Applications

DC-DC Converter Primary Switch

Brushless DC Motor Half-Bridge

Use Scenario: High-current 12 V input to 5 V/3.3 V point-of-load converter in telecom base station power supplies.

IC Role / Device Role: Low-side synchronous rectifier switch replacing Schottky diode to improve efficiency at >60 A load.

Use Value: 6.5 mΩ R_DS(on) cuts conduction loss to <0.5 W vs. 2.5 W with 40 V/100 A Schottky, increasing full-load efficiency by 2.1%.

Use Scenario: Upper-leg switch in three-phase inverter driving 2 kW BLDC fan in HVAC system.

IC Role / Device Role: High-side N-channel MOSFET controlled via bootstrap gate driver in 20–40 kHz PWM.

Use Value: 100 nC Q_g and 210 ns t_r enable <500 ns dead-time control, reducing shoot-through risk while maintaining >96% inverter efficiency.

Industrial Solenoid Driver

Automotive Body Control Module Load Switch

Use Scenario: 24 V solenoid actuator control in automated valve manifold requiring 100 ms pulse-on time.

IC Role / Device Role: Unclamped inductive switch with integrated avalanche energy handling.

Use Value: 700 mJ E_AS rating eliminates need for external TVS/clamp diode, simplifying BOM and PCB layout.

Use Scenario: 12 V battery-fed window lift or seat adjuster motor control in passenger vehicle BCM.

IC Role / Device Role: Protected high-current load switch with logic-level gate for MCU direct drive.

Use Value: V_GS(th) = 1.0–2.0 V ensures reliable turn-on at cold-crank battery voltages down to 6 V, preventing stall during startup.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP130NF10L	R_DS(on) = 7.5 mΩ @ 10 V; Q_g = 110 nC; V_DS = 100 V	Higher voltage rating suits 24–48 V systems but increases gate drive energy and cost in 12 V designs	Prefer when system must tolerate 100 V transients or operate across wider input ranges
IRLB8721PBF	R_DS(on) = 13 mΩ @ 4.5 V; TO-220 footprint; lower current rating (62 A)	Optimized for 3.3 V logic drive only; insufficient for >80 A continuous loads	Select only for space-constrained 3.3 V MCU-driven loads under 60 A with minimal thermal margin

Compared with STP130NF10L and IRLB8721PBF, IRL1004PbF delivers the lowest R_DS(on) at 10 V among TO-220 40 V logic-level MOSFETs, making it optimal for high-current 12 V systems where conduction loss dominates thermal design.

Availability

IRL1004PbF is available at Aetrix Electronics and suitable for high-current DC-DC converters, BLDC motor inverters, and industrial solenoid drivers requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRL1004PbF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with headquarters in Munich, Germany.

The IRL1004PbF belongs to Infineon's HEXFET® logic-level power MOSFET product line, engineered for high-efficiency, high-current switching in 12–48 V embedded power systems where low gate drive voltage and rugged transient handling are mandatory.

FAQ

What is the maximum continuous drain current for IRL1004PbF at 100°C case temperature?

The maximum continuous drain current is 92 A at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating due to reduced heat transfer at elevated case temperatures, and assumes proper heatsinking with R_θCS ≤ 0.50 °C/W and ambient airflow per IR Design Tip #93-4.

Can IRL1004PbF be driven directly by a 3.3 V microcontroller GPIO?

Yes-its gate threshold voltage range is 1.0–2.0 V, and it achieves R_DS(on) ≤ 9 mΩ at V_GS = 4.5 V. While full enhancement (6.5 mΩ) requires 10 V, 3.3 V drive yields usable on-resistance (~25 mΩ) for moderate-current applications (<30 A) with acceptable thermal margin.

Is the TO-220AB package lead-free and RoHS-compliant?

Yes-the "PbF" suffix in IRL1004PbF explicitly denotes lead-free and RoHS-compliant construction. The device meets JEDEC J-STD-020 moisture sensitivity level (MSL) 1 and supports standard SnPb or lead-free reflow profiles, including peak soldering temperature of 300°C for 10 seconds at 1.6 mm from case.

Does IRL1004PbF include an integrated body diode, and what are its key parameters?

Yes-it features a monolithic p-n junction body diode with V_SD = 1.3 V at 78 A and 25°C, reverse recovery time t_rr = 78–120 ns, and Q_rr = 180–270 nC. These values are measured under standardized conditions (I_F = 78 A, di/dt = 100 A/µs), confirming suitability for synchronous rectification and freewheeling in hard-switched topologies.

IRL1004 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 130A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.5mOhm @ 78A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 100 nC @ 4.5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 5330 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 200W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRL1004 FAQ

1.How can I place an order for IRL1004 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL1004 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL1004 reliable?

The price and inventory of IRL1004 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL1004 is usually 5 days.

3.What payment methods are accepted for IRL1004?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL1004 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL1004?

IRL1004 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL1004 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL1004?

For technical support, including IRL1004 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL1004 requirements.

6.How does Aetrix verify that IRL1004 is sourced from the original manufacturer or authorized distributors?

All IRL1004 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL1004 meets industry standards.

7.What is the process for return or replacement of IRL1004?

All IRL1004 units undergo pre-shipment inspection (PSI). If there is an issue with IRL1004, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL1004 part is unused and in its original packaging.

Return procedure for IRL1004:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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