Infineon Technologies IRL1004STRLPBF

Overview

IRL1004STRLPBF from Infineon Technologies (formerly International Rectifier) is a logic-level N-channel D2Pak surface-mount power MOSFET designed for high-current DC-DC conversion, motor drive, and battery protection circuits. It delivers 40 V V(BR)DSS, 0.0065 Ω RDS(on) at VGS = 10 V, 130 A continuous drain current at TC = 25°C, and is fully avalanche rated for rugged operation in switching power supplies.

For engineers reviewing the IRL1004STRLPBF datasheet, IRL1004STRLPBF pinout, IRL1004STRLPBF application, or IRL1004STRLPBF equivalent, key selection criteria include its low RDS(on) at 4.5 V gate drive, 175°C junction rating, D2Pak thermal performance (0.75°C/W RθJC), and fast switching with 16 ns td(on) and 25 ns td(off) under standard test conditions.

Technical Context

This HEXFET® Fifth Generation MOSFET uses advanced silicon processing to minimize conduction loss while maintaining robust unclamped inductive switching capability. Its logic-level gate threshold (VGS(th) = 1.0–2.0 V) enables direct drive from microcontrollers and PWM controllers without level-shifting.

The device integrates a fast-recovery body diode (trr = 78–120 ns, Qrr = 180–270 nC) and supports high di/dt (≤370 A/µs) in avalanche mode. Thermal design is enabled by its D2Pak package, offering 200 W PD at TC = 25°C and 3.8 W at TA = 25°C with PCB mounting.

Key Specifications

Pinout & Package

The IRL1004STRLPBF is housed in a surface-mount D2Pak (TO-263) package with three terminals: Drain (tab), Source (pin 1), and Gate (pin 2). The exposed drain pad provides low-inductance, high-current path and serves as primary thermal interface to PCB copper.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRL1004PBF, the IRL1004STRLPBF offers identical performance in a tape-and-reel format optimized for automated SMT assembly, while STP130NF55 trades surface-mount compatibility for higher voltage headroom and slightly lower RDS(on) at the cost of thermal management complexity.

Availability

IRL1004STRLPBF is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, battery protection circuits, and hot-swap controllers requiring stable component supply across production lifecycles.

Supply support for IRL1004STRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues to manufacture and support the HEXFET® power MOSFET portfolio with full documentation and application engineering resources.

The IRL1004STRLPBF belongs to the Fifth Generation HEXFET® logic-level MOSFET family, engineered specifically for high-current, surface-mount switching applications demanding low gate drive voltage, high avalanche ruggedness, and minimal conduction loss.

FAQ

Is IRL1004STRLPBF RoHS-compliant and lead-free?

Yes. The "PBF" suffix denotes lead-free termination, and the part meets RoHS Directive 2011/65/EU requirements. The "P" in the assembly line code confirms lead-free manufacturing per JEDEC J-STD-609. All plating and die attach materials are Pb-free, with maximum lead content below 0.1 wt%.

What is the maximum recommended PCB copper area for thermal relief with IRL1004STRLPBF?

For optimal thermal performance, Infineon recommends a minimum 1.5" × 1.5" (38 mm × 38 mm) 2-oz copper pour connected to the drain tab via ≥8 thermal vias (0.3 mm diameter, filled or plated). This achieves ~40°C/W RθJA in still air, supporting 3.8 W continuous dissipation without forced airflow.

Can IRL1004STRLPBF be used in parallel configurations?

Yes, but with strict layout and gate drive matching. Parallel operation requires individual gate resistors (≤5 Ω), symmetrical trace lengths (<2 mm mismatch), and Kelvin-source connections to ensure current sharing. Thermal coupling between devices must be minimized to avoid thermal runaway, especially above 80°C ambient.

Does IRL1004STRLPBF require a gate resistor for ESD protection?

No dedicated ESD resistor is required-the device has built-in gate oxide protection (HBM > 2 kV). However, a 10–22 Ω series gate resistor is strongly recommended to dampen ringing, limit peak gate current during fast switching, and prevent oscillation caused by PCB trace inductance interacting with 100 nC Qg.