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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRL1004STRRPBF

Name: IRL1004STRRPBF
Brand: Infineon Technologies
SKU: IRL1004STRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRL1004STRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRL1004STRRPBF.pdf

Description:: MOSFET N-CH 40V 130A D2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:8,179

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Product details

Overview

IRL1004STRRPBF from Infineon Technologies (formerly International Rectifier) is a logic-level N-channel D2Pak surface-mount power MOSFET designed for high-current DC-DC conversion, motor drive half-bridges, and synchronous rectification. It delivers 130A continuous drain current at TC = 25°C, 40V V(BR)DSS, 6.5mΩ RDS(on) at VGS = 10V, and is fully avalanche-rated with 700mJ single-pulse energy - enabling robust operation in automotive body control modules and industrial power supplies.

For engineers reviewing the IRL1004STRRPBF datasheet, IRL1004STRRPBF pinout, IRL1004STRRPBF application, or IRL1004STRRPBF equivalent, key selection criteria include its logic-level gate drive (VGS(th) = 1.0–2.0V), ultra-low on-resistance at 4.5V gate drive (9mΩ), 175°C maximum junction temperature, and D2Pak thermal performance (RθJC = 0.75°C/W).

Technical Context

This MOSFET employs fifth-generation HEXFET® process technology to minimize conduction losses while maintaining fast switching (tr = 210ns, tf = 14ns) and rugged unclamped inductive switching capability. Its integrated body diode features 78A repetitive avalanche current and 78ns reverse recovery time (trr), supporting synchronous buck topologies without external Schottky supplementation.

The device operates with ±16V gate voltage tolerance, supports 520A pulsed drain current (IDM), and exhibits low gate charge (Qg = 100nC, Qgd = 43nC) - enabling efficient gate driving with standard PWM controllers and minimizing Miller-induced shoot-through risk in high-frequency bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V(BR)DSS	40V - Withstands up to 40V drain-source blocking voltage before avalanche onset; suitable for 24V/36V bus systems.
RDS(on) @ VGS=10V	6.5mΩ - Enables ≤0.85W conduction loss at 130A; critical for thermally constrained PCB-mounted designs.
ID @ TC=25°C	130A - Maximum continuous current under ideal heatsinking; defines package power-handling ceiling.
EAS	700mJ - Single-pulse avalanche energy rating ensures survivability during inductive load turn-off transients.
Qg / Qgd	100nC / 43nC - Low Miller charge reduces switching losses and improves noise immunity in high-dV/dt environments.
trr / Qrr	78ns / 180–270nC - Fast body diode recovery minimizes cross-conduction loss in synchronous rectifiers.
RθJC	0.75°C/W - Junction-to-case thermal resistance enables direct heatsink mounting for >150W dissipation capability.

Pinout & Package

D2Pak (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection. Three terminals: Source (pins 1–3), Gate (pin 4), Drain (exposed pad underside).

Pin/Terminal	Circuit Role	Design Meaning
Source (Pins 1–3)	Power return path and reference node	Low-inductance parallel connection reduces source inductance in high-di/dt switching.
Gate (Pin 4)	Control electrode for channel conduction	Logic-compatible threshold (1.0–2.0V) allows direct microcontroller or gate driver IC interface.
Drain (Exposed Pad)	Main power output terminal and thermal path	Direct metal contact to heatsink achieves 0.75°C/W thermal resistance; electrically tied to drain.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at VGS ≥ 4.5V - eliminates need for gate boosters in 3.3V/5V control systems.
Fully avalanche rated	Guaranteed 700mJ single-pulse and 20mJ repetitive avalanche energy - enables reliable operation without snubbers in inductive loads.
Ultra-low RDS(on)	6.5mΩ @ 10V and 9mΩ @ 4.5V - reduces conduction loss by >40% vs. prior-gen equivalents at same current density.
High dv/dt immunity	Rated for 5.0V/ns peak diode recovery dv/dt - suppresses false turn-on during fast commutation.
Lead-free construction	RoHS-compliant "P" suffix indicates Pb-free plating and solderable finish per JEDEC J-STD-020.

Applications

Automotive Body Control Module

Industrial DC-DC Converter

Use Scenario: High-side load switching for headlights, cooling fans, and solenoid actuators in 12V/24V vehicle architectures.

IC Role / Device Role / Timing Role: Power switch controlling load current with PWM dimming or soft-start sequencing.

Use Value: 130A rating and 175°C operation ensure reliability across engine bay temperature extremes without derating.

Use Scenario: Primary-side synchronous rectifier in isolated 48V-to-12V telecom or server PSUs.

IC Role / Device Role / Timing Role: Low-loss freewheeling path replacing Schottky diodes in active-clamp forward or LLC resonant converters.

Use Value: 78ns trr and 180nC Qrr reduce reverse recovery loss by >65% versus discrete Schottky alternatives at 200kHz.

Motor Drive Half-Bridge

UPS Inverter Stage

Use Scenario: Low-side switch in 3-phase BLDC motor drivers for HVAC blowers and power tools.

IC Role / Device Role / Timing Role: High-current, fast-turning switch synchronized with complementary high-side FET.

Use Value: 100nC Qg and 210ns tr enable clean 50kHz switching with minimal gate driver power consumption.

Use Scenario: Output stage switch in online double-conversion UPS inverters delivering 230VAC from 380VDC bus.

IC Role / Device Role / Timing Role: Hard-switched power switch handling bidirectional current in full-bridge topology.

Use Value: Fully rated avalanche capability absorbs line surge and short-circuit energy without failure during grid fault conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL1404ZPBF	Higher RDS(on) (10.5mΩ @ 10V), lower ID (160A), same D2Pak package	Lower conduction efficiency at high current; better suited for cost-sensitive, lower-power designs	Select when budget constraints outweigh 3.5mΩ on-resistance advantage and thermal margin is ample.
STP130NF10L	100V V(BR)DSS, 9.5mΩ RDS(on), TO-220FP package, non-logic-level (VGS(th) = 2–4V)	Higher voltage rating but requires gate driver for 3.3V logic; unsuitable for space-constrained SMT layouts	Choose only if system requires >40V blocking or through-hole assembly is mandated.

Compared with IRL1004STRRPBF, IRL1404ZPBF trades 4mΩ higher on-resistance for lower unit cost, while STP130NF10L sacrifices logic-level drive and SMT compatibility for extended voltage range - making IRL1004STRRPBF optimal for compact, high-efficiency 24–36V SMT power stages.

Availability

IRL1004STRRPBF is available at Aetrix Electronics and suitable for automotive body control modules, industrial DC-DC converters, and motor drive half-bridges requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for IRL1004STRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control solutions, with core expertise in silicon and wide-bandgap power devices.

The IRL1004STRRPBF belongs to Infineon's legacy HEXFET® logic-level MOSFET product line, engineered specifically for high-current, low-voltage switching in space-constrained, thermally demanding applications such as automotive subsystems and industrial power supplies.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRL1004STRRPBF supports 92A continuous drain current at TC = 100°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the D2Pak package and ensures safe operation within the 175°C maximum junction temperature under sustained load conditions with appropriate heatsinking.

Does this MOSFET require a gate resistor for stability in hard-switching applications?

Yes - a gate resistor (typically 2.5–10Ω) is recommended to dampen ringing caused by gate loop inductance and Miller capacitance interaction. The datasheet specifies switching times using RG = 2.5Ω, and omitting it may cause oscillation, excessive EMI, or gate driver overstress during fast transitions.

Can the IRL1004STRRPBF be used in parallel configurations?

Yes - its positive temperature coefficient of RDS(on) enables inherent current sharing when paralleled. However, layout symmetry (matched gate and source inductance), individual gate resistors, and thermal coupling must be carefully controlled to prevent current imbalance and localized overheating in multi-device arrays.

Is the body diode suitable for continuous freewheeling in synchronous rectification?

Yes - the integrated body diode is rated for 78A continuous source current (ISM) and 78A repetitive avalanche current (IAR), with 78ns trr and low forward voltage (1.3V at 78A). It is qualified for synchronous rectifier use in buck and flyback converters operating up to 500kHz with proper thermal management.

IRL1004STRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 130A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.5mOhm @ 78A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 100 nC @ 4.5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 5330 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 200W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRL1004STRRPBF FAQ

1.How can I place an order for IRL1004STRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL1004STRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL1004STRRPBF reliable?

The price and inventory of IRL1004STRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL1004STRRPBF is usually 5 days.

3.What payment methods are accepted for IRL1004STRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL1004STRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL1004STRRPBF?

IRL1004STRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL1004STRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL1004STRRPBF?

For technical support, including IRL1004STRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL1004STRRPBF requirements.

6.How does Aetrix verify that IRL1004STRRPBF is sourced from the original manufacturer or authorized distributors?

All IRL1004STRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL1004STRRPBF meets industry standards.

7.What is the process for return or replacement of IRL1004STRRPBF?

All IRL1004STRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL1004STRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL1004STRRPBF part is unused and in its original packaging.

Return procedure for IRL1004STRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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