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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRL1104LPBF

Name: IRL1104LPBF
Brand: Infineon Technologies
SKU: IRL1104LPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRL1104LPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRL1104LPBF.pdf

Description:: MOSFET N-CH 40V 104A TO262

Quantity:: RFQ Add To RFQ list

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Inventory:5,647

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Product details

Overview

IRL1104LPBF from Infineon Technologies (formerly International Rectifier) is a logic-level N-channel enhancement-mode Power MOSFET in TO-262 (I²PAK) through-hole package, rated for 40 V V_DSS, 104 A I_D @ T_C = 25°C, and R_DS(on) = 8 mΩ @ V_GS = 10 V. It features fully avalanche-rated ruggedness, 175°C maximum junction temperature, and fast switching with 68 nC total gate charge - deployed in high-current DC motor drives and industrial power supplies.

For engineers reviewing the IRL1104LPBF datasheet, IRL1104LPBF pinout, IRL1104LPBF application, or IRL1104LPBF equivalent, key selection criteria include its low-threshold gate drive (V_GS(th) = 1.0 V), body diode reverse recovery performance (t_rr = 84–126 ns), thermal resistance (R_θJC = 0.9 °C/W), and avalanche energy rating (E_AS = 340 mJ).

Technical Context

This MOSFET employs fifth-generation HEXFET® process technology to achieve ultra-low on-resistance per die area while maintaining robust safe operating area (SOA) and unclamped inductive switching capability. Its logic-level gate enables direct drive from 3.3 V/5 V microcontrollers without level-shifting.

The device integrates a fast, low-Q_rr body diode (Q_rr = 223–335 nC) and exhibits controlled dv/dt immunity (5.0 V/ns peak diode recovery), making it suitable for hard-switched topologies where commutation stress and shoot-through risk are critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum drain-to-source blocking voltage before avalanche onset; sets upper limit for bus voltage in 24 V/36 V systems.
R_DS(on) @ V_GS = 10 V	8 mΩ - Conduction loss of ~0.087 W at 104 A; enables high-efficiency operation below 100 A continuous load.
I_D @ T_C = 25°C	104 A - Continuous current rating under ideal heatsink conditions; requires ≥167 W thermal path to maintain T_J ≤ 175°C.
Q_g	68 nC - Total gate charge determines driver strength requirement; 3.6 Ω gate resistor yields ~32 ns t_d(off) in typical 4.5 V drive.
E_AS	340 mJ - Single-pulse avalanche energy rating; supports reliable operation during inductive turn-off transients up to 62 A.
t_rr	84–126 ns - Body diode reverse recovery time at T_J = 25°C; impacts switching loss and EMI in synchronous rectification or freewheeling paths.
R_θJC	0.9 °C/W - Junction-to-case thermal resistance; defines minimum heatsink interface performance needed to sustain full current.

Pinout & Package

IRL1104LPBF uses the TO-262 (I²PAK) through-hole package - a low-profile variant of the D2Pak optimized for vertical mounting and high-power density PCB layouts. It features isolated tab (drain-connected), three leads, and 1.6 mm creepage distance from lead to case.

Pin/Terminal	Circuit Role	Design Meaning
Lead 1 (Source)	Source terminal (S)	Low-side return path; connects directly to PCB ground plane or source rail; carries full load current and body diode conduction.
Lead 2 (Gate)	Control input (G)	Logic-level gate requiring ≤1.0 V threshold; sensitive to ESD; must be driven with <100 Ω series resistance to damp ringing.
Lead 3 (Drain)	High-side switch node (D)	Connected to internal die backside and exposed tab; electrically tied to drain; requires insulated mounting when heatsink is grounded.

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) = 1.0 V max enables direct interfacing with 3.3 V MCU GPIOs without external level shifters or gate drivers.
Fully avalanche rated	Rated for 340 mJ single-pulse and 17 mJ repetitive avalanche energy - eliminates need for external snubbers in inductive load switching.
Low R_DS(on) × Q_g figure-of-merit	8 mΩ × 68 nC = 544 mΩ·nC - balances conduction and switching losses for high-frequency (<100 kHz) hard-switched SMPS and motor control.
Enhanced body diode performance	Q_rr = 223–335 nC and t_rr = 84–126 ns support efficient synchronous rectification and reduce commutation loss in half-bridge configurations.

Applications

DC Motor Drive

Industrial Power Supply

Use Scenario: High-current brushed DC motor control in automated machinery, with PWM frequencies up to 20 kHz and peak currents >80 A.

IC Role / Device Role / Timing Role: Low-side switching element in H-bridge configuration; handles bidirectional current and regenerative braking via body diode conduction.

Use Value: 8 mΩ R_DS(on) minimizes I²R heating at stall current; 175°C T_J rating ensures reliability under intermittent overload.

Use Scenario: Primary-side synchronous rectifier or secondary-side high-current switch in 48 V telecom power supplies.

IC Role / Device Role / Timing Role: Output switch in non-isolated buck converter delivering 60+ A at 12 V; operates in continuous conduction mode with 50–100 kHz switching.

Use Value: 68 nC Q_g allows efficient gate driving with integrated controller outputs; low C_oss (1065 pF) reduces turn-off loss at high V_DS.

Uninterruptible Power System (UPS)

Electric Vehicle Auxiliary Power Module

Use Scenario: Battery disconnect and load switching in 24 V/48 V UPS inverters, subject to surge currents and fault clearing.

IC Role / Device Role / Timing Role: Solid-state relay replacement; performs make/break functions under load with controlled dv/dt and avalanche tolerance.

Use Value: 340 mJ E_AS withstands inductive kickback during battery isolation; 5.0 V/ns dv/dt rating prevents spurious turn-on during fast transients.

Use Scenario: 12 V auxiliary power distribution in EV cabin modules (HVAC, infotainment), requiring high reliability and thermal margin.

IC Role / Device Role / Timing Role: High-side load switch controlling power to subsystems; activated by vehicle CAN/LIN network via local MCU.

Use Value: 1.0 V V_GS(th) ensures robust turn-on even with degraded 3.3 V supply rails; TO-262 mechanical stability supports vibration-prone automotive environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL2203NPBF	V_DSS = 30 V, R_DS(on) = 3.3 mΩ @ 10 V, I_D = 116 A - lower voltage rating but lower on-resistance.	Suitable only for ≤30 V systems; higher current capability but reduced bus voltage margin.	Select when operating voltage is strictly ≤24 V and lowest possible conduction loss is prioritized over voltage headroom.
STP110N4F6	V_DSS = 40 V, R_DS(on) = 4.2 mΩ @ 10 V, Q_g = 105 nC - lower R_DS(on) but significantly higher gate charge.	Higher switching loss at >50 kHz; requires stronger gate driver due to 105 nC Q_g.	Prefer for low-frequency, high-current applications (e.g., solenoid drivers) where conduction loss dominates over switching loss.

Compared with IRL1104LPBF, IRL2203NPBF trades voltage margin for lower R_DS(on) in sub-30 V systems, while STP110N4F6 delivers superior conduction efficiency at the cost of increased gate drive demand and reduced high-frequency suitability.

Availability

IRL1104LPBF is available at Aetrix Electronics and suitable for DC motor drives, industrial power supplies, uninterruptible power systems, and EV auxiliary power modules requiring stable component supply and long-term manufacturability.

Supply support for IRL1104LPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices and wide-bandgap solutions.

The IRL1104LPBF belongs to Infineon's legacy HEXFET® logic-level MOSFET product line, engineered for high-current, low-voltage switching in industrial automation, power conversion, and transportation systems where robustness and ease of drive are essential.

FAQ

Is IRL1104LPBF RoHS-compliant and lead-free?

Yes, IRL1104LPBF is lead-free and RoHS-compliant, as indicated by the "PbF" suffix and documented in Infineon's official material declarations. The device meets EU Directive 2011/65/EU and has been manufactured with lead-free terminations since its introduction, with soldering temperature rated at 300°C for 10 seconds at 1.6 mm from case.

What is the maximum continuous drain current at 100°C case temperature?

The maximum continuous drain current for IRL1104LPBF at T_C = 100°C is 74 A, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-262 package; operation above this current requires active cooling or reduced duty cycle to maintain T_J ≤ 175°C.

Can IRL1104LPBF be used in parallel configurations?

Yes, IRL1104LPBF supports paralleling due to its positive temperature coefficient of R_DS(on), which promotes current sharing across multiple devices. However, matched gate resistors (≤5% tolerance), symmetrical PCB layout, and individual source inductance balancing are required to avoid dynamic current imbalance during switching transitions.

Does the body diode support synchronous rectification in buck converters?

Yes, the integrated body diode has characterized reverse recovery parameters (t_rr = 84–126 ns, Q_rr = 223–335 nC), enabling use in synchronous rectification. However, for optimal efficiency above 50 kHz, an external Schottky diode or dedicated synchronous MOSFET driver is recommended to minimize dead-time losses and recoverable energy.

IRL1104LPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 104A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 62A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 68 nC @ 4.5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 3445 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.4W (Ta), 167W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRL1104LPBF FAQ

1.How can I place an order for IRL1104LPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL1104LPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL1104LPBF reliable?

The price and inventory of IRL1104LPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL1104LPBF is usually 5 days.

3.What payment methods are accepted for IRL1104LPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL1104LPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL1104LPBF?

IRL1104LPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL1104LPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL1104LPBF?

For technical support, including IRL1104LPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL1104LPBF requirements.

6.How does Aetrix verify that IRL1104LPBF is sourced from the original manufacturer or authorized distributors?

All IRL1104LPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL1104LPBF meets industry standards.

7.What is the process for return or replacement of IRL1104LPBF?

All IRL1104LPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL1104LPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL1104LPBF part is unused and in its original packaging.

Return procedure for IRL1104LPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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