Infineon Technologies IRL1404PBF-INF
- Part No.:
- IRL1404PBF-INF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IRL1404PBF-INF.pdf
- Description:
- MOSFET N-CH 40V 160A TO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:879
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Product details
Overview
IRL1404PBF-INF from Infineon Technologies (formerly International Rectifier) is a 40V, 160A N-channel enhancement-mode power MOSFET in TO-220AB package, featuring 4.0 mΩ RDS(on) at VGS = 10 V, 140 nC total gate charge, and full avalanche rating for robust switching in high-current DC-DC converters and motor drives.
For engineers reviewing the IRL1404PBF-INF datasheet, IRL1404PBF-INF pinout, IRL1404PBF-INF application, or IRL1404PBF-INF equivalent, key selection criteria include its 4.0 mΩ on-resistance at 10 V gate drive, 640 A pulsed drain current capability, 620 mJ single-pulse avalanche energy, and TO-220AB thermal resistance of 0.75 °C/W junction-to-case.
Technical Context
This MOSFET employs seventh-generation HEXFET® process technology to achieve ultra-low RDS(on) per die area while maintaining fast switching (tr = 270 ns, tf = 37 ns) and rugged unclamped inductive switching performance. Its body diode exhibits 1.3 V forward voltage at 95 A and 63–94 ns reverse recovery time.
The device is fully avalanche-rated with 620 mJ single-pulse EAS and 95 A IAR, enabling reliable operation under transient overloads. Gate threshold voltage (1.0–3.0 V) and low 4.3 V RDS(on) spec (5.9 mΩ) support logic-level and standard gate drive compatibility.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40 V - Maximum blocking voltage before avalanche onset; sets upper limit for DC bus or flyback clamp applications. |
| RDS(on) @ VGS = 10 V | 4.0 mΩ - Enables <1 W conduction loss at 160 A continuous, critical for high-efficiency 12 V/48 V power stages. |
| ID @ TC = 25°C | 160 A - Continuous drain current rating under ideal heatsink conditions; defines maximum steady-state load handling. |
| Qg | 140 nC - Total gate charge determines driver power requirement and switching loss trade-off in hard-switched topologies. |
| EAS | 620 mJ - Single-pulse avalanche energy rating confirms robustness against inductive turn-off transients without external snubbers. |
| RθJC | 0.75 °C/W - Junction-to-case thermal resistance enables precise heatsink sizing for thermal management in industrial enclosures. |
Pinout & Package
IRL1404PBF-INF is housed in a TO-220AB package with isolated tab (drain-connected), standard lead spacing, and screw-mount capability (10 lbf·in torque). The case serves as the drain terminal, simplifying heatsinking and reducing layout parasitics.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path output / Heat transfer surface | Electrically connected to metal tab; must be electrically isolated from chassis unless system ground reference permits. |
| Source | Return path for load current / Reference node for gate drive | Low-inductance source connection critical for minimizing shoot-through risk and gate oscillation in half-bridge configurations. |
| Gate | Control input for channel conduction | High-impedance input requiring low-impedance gate driver (<2.5 Ω series resistance recommended per datasheet Fig. 13a). |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 4.0 mΩ @ 10 V ensures minimal I²R losses in high-current 12 V automotive and industrial power supplies. |
| Full avalanche rating | 620 mJ EAS and 95 A IAR eliminate need for external clamping in relay drivers and solenoid controls. |
| Logic-level compatible | Specified RDS(on) ≤ 5.9 mΩ @ VGS = 4.3 V enables direct drive from microcontroller GPIOs without level-shifting. |
| TO-220AB mechanical robustness | Rated for 300 °C soldering (10 s) and 1.1 N·m mounting torque supports high-reliability manufacturing and field serviceability. |
Applications
| DC-DC Converter Primary Switch | Automotive Starter Relay Driver |
|---|---|
Use Scenario: High-current buck converter in 12 V battery-powered systems delivering up to 200 A output. IC Role / Device Role / Timing Role: Main synchronous rectifier switch operating at 100–500 kHz with forced-air cooling. Use Value: 4.0 mΩ RDS(on) reduces conduction loss by >35% versus legacy 6.5 mΩ devices, improving efficiency from 92% to 94.5% at 150 A. | Use Scenario: Solid-state replacement for electromechanical starter relays in commercial vehicles. IC Role / Device Role / Timing Role: High-side load switch controlled by vehicle ECU with 100 ms pulse duration and 10x surge tolerance. Use Value: 640 A pulsed drain rating and 620 mJ avalanche energy withstand repeated cranking surges without derating or failure. |
| Industrial Motor Control H-Bridge | UPS Inverter Output Stage |
Use Scenario: Half-bridge leg in 3 kW BLDC motor drive with 20 kHz PWM and regenerative braking. IC Role / Device Role / Timing Role: Low-side switching element with active freewheeling via integrated body diode. Use Value: 63 ns body diode trr and 170 nC Qrr minimize commutation loss and voltage overshoot during regeneration. | Use Scenario: Output stage in online double-conversion UPS supplying 230 V AC from 48 V DC bus. IC Role / Device Role / Timing Role: High-current inverter switch in full-bridge topology operating at 16 kHz with sinusoidal PWM. Use Value: 0.75 °C/W RθJC allows stable 110 A continuous operation at 100°C case temperature with passive heatsinking. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP160NF04 | RDS(on) = 4.5 mΩ @ 10 V; Qg = 130 nC; EAS = 520 mJ | Lower avalanche energy margin; slightly higher conduction loss at 160 A | Preferred where gate drive strength is limited and avalanche stress is infrequent. |
| IRFB4115PBF | RDS(on) = 3.2 mΩ @ 10 V; Qg = 180 nC; TO-220 package with non-isolated tab | Higher switching loss due to increased gate charge; requires insulated mounting hardware | Chosen when lowest possible conduction loss dominates over gate drive capability and thermal interface complexity. |
Compared with STP160NF04 and IRFB4115PBF, IRL1404PBF-INF offers optimal balance of low RDS(on), moderate Qg, and high EAS, making it especially suitable for cost-sensitive industrial motor drives where both efficiency and fault robustness are required without premium gate driver investment.
Availability
IRL1404PBF-INF is available at Aetrix Electronics and suitable for DC-DC converters, motor control H-bridges, automotive relay drivers, and UPS inverter output stages requiring stable component supply across production lifecycles.
Supply support for IRL1404PBF-INF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices and system-level solutions.
The IRL1404PBF-INF belongs to Infineon's legacy HEXFET® power MOSFET product line, engineered for high-current, high-reliability industrial and automotive power switching where low on-resistance, rugged avalanche behavior, and TO-220 thermal performance are essential.
FAQ
Is IRL1404PBF-INF RoHS-compliant and lead-free?
Yes, the "PBF" suffix explicitly denotes lead-free (Pb-free) construction per RoHS Directive 2011/65/EU. The device uses matte tin plating on leads and meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1), with no post-reflow annealing required.
What is the maximum safe operating area (SOA) limitation at 100°C case temperature?
At TC = 100°C, the device supports 110 A continuous drain current (per datasheet Fig. 9) and remains within SOA limits up to 40 V × 110 A = 4.4 kW for DC operation, constrained by RDS(on) heating and thermal resistance-not by secondary breakdown.
Can IRL1404PBF-INF be used in parallel configurations?
Yes-its positive temperature coefficient of RDS(on) (see Fig. 4) ensures inherent current sharing stability. Parallel operation requires matched gate drive impedance (<1 Ω difference), symmetrical PCB layout, and individual source resistors (0.01 Ω) for dynamic balancing.
Does the body diode support synchronous rectification in buck converters?
No-the body diode is not optimized for synchronous rectification: its 1.3 V VSD and 170–250 nC Qrr cause excessive conduction and switching loss. External Schottky or MOSFET synchronous rectifiers are required for >95% efficiency targets.
IRL1404PBF-INF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-220-3
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 4mOhm @ 95A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 140 nC @ 5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6590 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 200W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRL1404PBF-INF FAQ
1.How can I place an order for IRL1404PBF-INF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRL1404PBF-INF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRL1404PBF-INF reliable?
The price and inventory of IRL1404PBF-INF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL1404PBF-INF is usually 5 days.
3.What payment methods are accepted for IRL1404PBF-INF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL1404PBF-INF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRL1404PBF-INF?
IRL1404PBF-INF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRL1404PBF-INF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRL1404PBF-INF?
For technical support, including IRL1404PBF-INF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL1404PBF-INF requirements.
6.How does Aetrix verify that IRL1404PBF-INF is sourced from the original manufacturer or authorized distributors?
All IRL1404PBF-INF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL1404PBF-INF meets industry standards.
7.What is the process for return or replacement of IRL1404PBF-INF?
All IRL1404PBF-INF units undergo pre-shipment inspection (PSI). If there is an issue with IRL1404PBF-INF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRL1404PBF-INF part is unused and in its original packaging.
Return procedure for IRL1404PBF-INF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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