Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRL1404SPBF

Name: IRL1404SPBF
Brand: Infineon Technologies
SKU: IRL1404SPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRL1404SPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRL1404SPBF.pdf

Description:: MOSFET N-CH 40V 160A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8,319

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRL1404SPBF from Infineon Technologies (formerly International Rectifier) is a 40 V, 160 A, logic-level N-channel Power MOSFET in D2Pak (TO-263) package, featuring 4.0 mΩ R_DS(on) at V_GS = 10 V and 5.9 mΩ at V_GS = 4.3 V. It delivers high-current switching for DC-DC converters, motor drives, and power supply OR-ing circuits with fast turn-on (18 ns) and turn-off (38 ns) delays.

For engineers reviewing the IRL1404SPBF datasheet, IRL1404SPBF pinout, IRL1404SPBF application, or IRL1404SPBF equivalent, key selection criteria include its 40 V V_DSS, 160 A continuous drain rating at T_C = 25°C, 140 nC total gate charge, fully avalanche-rated construction, and lead-free D2Pak thermal performance (R_θJC = 0.75°C/W).

Technical Context

This seventh-generation HEXFET® device uses advanced silicon processing to minimize on-resistance per die area while maintaining rugged unclamped inductive switching capability. Its low-threshold logic-level gate (V_GS(th) = 1.0–3.0 V) enables direct drive from 3.3 V/5 V microcontrollers without level-shifting.

The integrated body diode exhibits 1.3 V forward voltage at 95 A and 63–94 ns reverse recovery time, supporting synchronous rectification and bidirectional current handling in H-bridge motor control. Avalanche energy rating (E_AS = 520 mJ) and dynamic dv/dt tolerance (5.0 V/ns) ensure robustness in noisy industrial environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage before avalanche; sets upper limit for bus voltage in 12 V/24 V automotive and industrial systems.
R_DS(on) @ V_GS = 10 V	4.0 mΩ - Enables <1 W conduction loss at 160 A, critical for high-efficiency 48 V battery-powered inverters.
I_D @ T_C = 25°C	160 A - Continuous current capability when mounted on heatsink; defines minimum heatsink sizing for sustained load conditions.
Q_g	140 nC - Total gate charge determines driver strength requirement; requires ≥2 A peak gate current for 100 ns switching transitions.
E_AS	520 mJ - Single-pulse avalanche energy rating allows safe operation during inductive load turn-off without external snubbers.
R_θJC	0.75°C/W - Junction-to-case thermal resistance enables 200 W power dissipation with ≤150°C junction rise above 25°C case temperature.

Pinout & Package

D2Pak (TO-263) surface-mount package with exposed drain pad for low-inductance, high-current PCB mounting and enhanced thermal transfer to copper pour or heatsink. Three terminals: Drain (tab), Source (pins 1 & 2), Gate (pin 3).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Electrically connected to metal tab; must be soldered to large copper area or heatsink for thermal and electrical integrity.
Source (Pin 1 & Pin 2)	Reference node for gate drive and current return	Dual-pin configuration reduces source inductance; critical for minimizing voltage spikes during high di/dt switching.
Gate (Pin 3)	Control input for channel conduction	Logic-level compatible; accepts 4.3 V threshold-enables direct interface with 5 V or 3.3 V MCU GPIOs without buffer.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	4.0 mΩ at 10 V gate drive enables >98% efficiency in 48 V/100 A DC-DC stages with minimal thermal derating.
Fully avalanche rated	520 mJ single-pulse energy rating eliminates need for external clamping in relay/snubberless motor control designs.
Fast switching	18 ns turn-on delay + 130 ns fall time supports >200 kHz PWM in telecom power supplies without excessive switching loss.
Lead-free & RoHS compliant	Pb-free plating and halogen-free molding compound meet IPC-J-STD-020D reflow profile requirements up to 260°C peak.

Applications

Motor Drive Inverter

High-Current OR-ing Circuit

Use Scenario: Bidirectional 24 V BLDC motor control in automated guided vehicles (AGVs) with regenerative braking.

IC Role / Device Role / Timing Role: High-side and low-side switch in 3-phase inverter leg; body diode conducts reverse current during freewheeling.

Use Value: 1.3 V V_SD at 95 A and 63 ns t_rr reduce conduction and recovery losses by 22% vs. standard MOSFETs in same package.

Use Scenario: Redundant 48 V power supply backplane where two hot-swap sources feed common rail.

IC Role / Device Role / Timing Role: Reverse-polarity protection and current steering switch; operates in linear region during power switchover.

Use Value: 4.0 mΩ R_DS(on) limits voltage drop to <80 mV at 20 A, ensuring <0.2% rail droop during seamless source transition.

Industrial DC-DC Converter

Automotive Battery Disconnect

Use Scenario: 48 V-to-12 V step-down converter in off-highway equipment with wide ambient temperature range.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary side; switched at 300 kHz with zero-voltage switching assist.

Use Value: 170–250 nC Q_rr and 1.3 V V_SD enable >95% conversion efficiency at full 100 A load across –40°C to +125°C.

Use Scenario: Smart battery disconnect unit (BDU) for 48 V mild-hybrid vehicle energy storage systems.

IC Role / Device Role / Timing Role: Main isolation switch controlled via CAN-triggered gate driver; handles 160 A fault current interruption.

Use Value: 640 A pulsed drain rating and 520 mJ E_AS allow safe interruption of short-circuit events without catastrophic failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL180N4F6AG	40 V, 180 A, R_DS(on) = 3.2 mΩ @ 10 V; DFN 8×8 package, no exposed drain tab	Requires multilayer PCB thermal vias instead of heatsink mounting; unsuitable for through-hole retrofit	Preferred for space-constrained, high-density layouts where thermal management relies on internal copper layers.
IRF1404ZLPBF	40 V, 180 A, R_DS(on) = 3.8 mΩ @ 10 V; TO-220AB package, higher R_θJA (62°C/W)	Lower power density; limited to ≤60 W continuous dissipation without forced air	Chosen when mechanical compatibility with legacy TO-220 footprints is mandatory and heatsink access is unrestricted.

Compared with STL180N4F6AG and IRF1404ZLPBF, the IRL1404SPBF offers optimal balance of D2Pak thermal performance (0.75°C/W), logic-level gate drive, and proven avalanche ruggedness-making it preferred for industrial motor drives requiring both reliability and board-level thermal scalability.

Availability

IRL1404SPBF is available at Aetrix Electronics and suitable for high-current motor drives, redundant power OR-ing circuits, and 48 V DC-DC converters requiring stable component supply across multi-year production cycles.

Supply support for IRL1404SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with core expertise in silicon and wide-bandgap device innovation.

The HEXFET® Power MOSFET product line was engineered for high-efficiency, high-reliability switching in demanding power conversion and motor control applications-emphasizing low R_DS(on), fast switching, and rugged avalanche performance.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRL1404SPBF supports 110 A continuous drain current at T_C = 100°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2Pak package under sustained high-temperature operation and assumes proper PCB copper area and thermal interface to heatsink.

Does this MOSFET require a gate resistor for stability?

Yes-a gate resistor (typically 2.5 Ω to 10 Ω) is recommended to dampen ringing caused by gate loop inductance and prevent unintended oscillation. The datasheet specifies switching times (e.g., t_d(off) = 38 ns) using R_G = 2.5 Ω, confirming its use in characterization and design guidance.

Can the body diode handle continuous reverse current in H-bridge operation?

Yes-the integrated body diode is rated for 160 A continuous source current (I_S) and 640 A pulsed source current (I_SM). At 95 A, V_SD = 1.3 V and t_rr = 63–94 ns, enabling reliable freewheeling in hard-commutated H-bridges without external diodes.

Is the IRL1404SPBF suitable for 3.3 V microcontroller gate drive?

Yes-its gate threshold voltage (V_GS(th)) ranges from 1.0 V to 3.0 V, and R_DS(on) = 5.9 mΩ is guaranteed at V_GS = 4.3 V. With 3.3 V drive, it achieves partial enhancement (~60–70% of full I_D capability), sufficient for many low-duty-cycle or thermally relaxed applications.

IRL1404SPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 160A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.3V, 10V

Rds On (Max) @ Id, Vgs:: 4mOhm @ 95A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 140 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6600 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 200W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRL1404SPBF FAQ

1.How can I place an order for IRL1404SPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL1404SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL1404SPBF reliable?

The price and inventory of IRL1404SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL1404SPBF is usually 5 days.

3.What payment methods are accepted for IRL1404SPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL1404SPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL1404SPBF?

IRL1404SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL1404SPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL1404SPBF?

For technical support, including IRL1404SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL1404SPBF requirements.

6.How does Aetrix verify that IRL1404SPBF is sourced from the original manufacturer or authorized distributors?

All IRL1404SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL1404SPBF meets industry standards.

7.What is the process for return or replacement of IRL1404SPBF?

All IRL1404SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL1404SPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL1404SPBF part is unused and in its original packaging.

Return procedure for IRL1404SPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…