Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRL1404ZLPBF

Name: IRL1404ZLPBF
Brand: Infineon Technologies
SKU: IRL1404ZLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRL1404ZLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRL1404ZLPBF.pdf

Description:: MOSFET N-CH 40V 120A TO262

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,998

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRL1404ZLPBF from Infineon Technologies is a logic-level N-channel Power MOSFET in D2Pak (TO-263) package, designed for high-current DC-DC conversion and motor drive switching. It delivers 120A continuous drain current at T_C = 25°C, 3.1 mΩ R_DS(on) at V_GS = 10 V, and supports 40 V V_DSS, enabling efficient 12–24 V industrial power stages.

For engineers reviewing the IRL1404ZLPBF datasheet, IRL1404ZLPBF pinout, IRL1404ZLPBF application, or IRL1404ZLPBF equivalent, key selection criteria include its 175°C junction rating, 75 nC total gate charge, body diode reverse recovery time of 26 ns, and suitability for synchronous rectification and high-frequency PWM control in automotive and industrial power supplies.

Technical Context

This HEXFET® device uses advanced silicon processing to minimize conduction loss while maintaining robust avalanche capability. Its ultra-low on-resistance is achieved via optimized cell pitch and trench-gate geometry, and it features a fully rated 175°C operating junction temperature with thermally validated repetitive avalanche performance up to T_jmax.

The integrated body diode exhibits 1.3 V forward voltage at 75 A and 26 ns reverse recovery time, supporting fast-switching topologies. Gate drive compatibility extends down to 4.5 V, enabling direct interfacing with 5 V microcontrollers without level-shifting circuitry.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage for 12–24 V system rail protection and switching
R_DS(on)	3.1 mΩ @ V_GS = 10 V - Enables ≤ 9 W conduction loss at 120 A, critical for thermal management in compact PCB layouts
I_D (cont)	120 A @ T_C = 25°C - Silicon-limited current capacity suitable for high-power motor drivers and battery protection circuits
Q_g	75 nC - Determines gate driver power requirement; compatible with standard 1–2 A peak gate drivers
T_J max	175°C - Allows operation in sealed enclosures or high-ambient environments without derating below 100°C ambient
E_AS	220 mJ - Validated single-pulse avalanche energy for unclamped inductive switching in relay replacement and solenoid control
V_GS(th)	1.4–2.7 V - Ensures full enhancement at 5 V logic levels, eliminating need for external gate biasing

Pinout & Package

IRL1404ZLPBF is housed in a surface-mount D2Pak (TO-263) package with exposed drain pad for enhanced thermal dissipation. The package measures 10.67 mm × 9.65 mm × 4.83 mm and requires minimum 1"² copper area per IPC-2152 guidelines for rated current handling.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; accepts 0–16 V logic-level input; 200 nA leakage ensures low standby power
Pin 2 (S)	Source	Power return path; internal source bond wires rated for 200 A pulsed current; referenced to ground in low-side switch configuration
Pin 3 (D)	Drain	Main power output; connected to exposed metal tab; must be soldered to ≥ 2 oz copper pour for R_θJC = 0.65°C/W thermal performance

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at 4.5 V V_GS, enabling direct connection to 5 V MCU GPIOs without external level shifters
Ultra-low R_DS(on)	3.1 mΩ minimizes I²R losses in high-current paths, reducing heatsink requirements in 100+ W power stages
Repetitive avalanche rated	Validated for repeated unclamped inductive switching up to T_jmax, supporting robust solenoid and relay driver designs
175°C junction rating	Permits sustained operation in engine bay, industrial control cabinets, or sealed power modules without forced air cooling
Lead-free and RoHS-compliant	Meets JEDEC J-STD-020 reflow profile; compatible with standard Pb-free assembly processes and 260°C peak temperature

Applications

Automotive Body Control Module

Industrial DC Motor Drive

Use Scenario: High-side load switching for headlights, HVAC blowers, and seat actuators in 12 V vehicle electrical systems.

IC Role / Device Role / Timing Role: N-channel high-current switch configured in high-side topology with charge pump gate driver.

Use Value: 3.1 mΩ R_DS(on) limits voltage drop to < 370 mV at 120 A, preserving headlight brightness and reducing thermal stress in confined fuse box spaces.

Use Scenario: Half-bridge leg in 24 V brushed DC motor controllers for factory automation conveyors.

IC Role / Device Role / Timing Role: Low-side switching element in PWM-controlled H-bridge with 20 kHz switching frequency.

Use Value: 26 ns body diode trr and 75 nC Q_g enable clean turn-off with minimal shoot-through risk and < 1.5 W switching loss at 20 kHz/100 A.

Server PSU Synchronous Rectifier

Telecom 48 V Intermediate Bus Converter

Use Scenario: Secondary-side synchronous rectification in 12 V output stage of 80 PLUS Titanium server power supplies.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode in LLC resonant converter secondary.

Use Value: 1.3 V V_SD and 200 A pulsed source current support bidirectional conduction during dead-time, improving efficiency by 1.2% over 40 V Schottky alternatives.

Use Scenario: Primary-side switching in isolated 48 V-to-12 V intermediate bus converters for 5G base station power distribution.

IC Role / Device Role / Timing Role: Main switch in active-clamp forward or phase-shifted full-bridge topology.

Use Value: 220 mJ E_AS withstands voltage spikes from transformer leakage inductance, eliminating need for snubbers in space-constrained telecom modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL120N4F7AG	R_DS(on) = 3.7 mΩ @ 10 V; Q_g = 68 nC; TO-263 package	Slightly higher conduction loss but lower gate charge reduces driver complexity	Preferred when gate drive current is limited and thermal margin allows 0.6 mΩ higher R_DS(on)
ON Semiconductor NTMFS4C09NT1G	R_DS(on) = 3.2 mΩ @ 10 V; Q_g = 82 nC; SO-8FL package with 2.5× smaller footprint	Lower current rating (90 A) and reduced thermal mass limit use to < 60 W applications	Selected for space-constrained designs where board area outweighs peak current demand

Compared with STL120N4F7AG and NTMFS4C09NT1G, IRL1404ZLPBF offers the lowest R_DS(on) and highest continuous current in D2Pak, making it optimal for thermally demanding 100+ W power stages where conduction loss dominates efficiency.

Availability

IRL1404ZLPBF is available at Aetrix Electronics and suitable for automotive body control modules, industrial DC motor drives, server power supply synchronous rectifiers, and telecom intermediate bus converters requiring stable component supply across multi-year production cycles.

Supply support for IRL1404ZLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949 standards.

The IRL1404Z series belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in automotive and industrial power conversion where low R_DS(on), robust avalanche behavior, and logic-level drive are mandatory.

FAQ

What is the maximum continuous drain current for IRL1404ZLPBF at 100°C case temperature?

The maximum continuous drain current is 140 A at T_C = 100°C, as specified in the Absolute Maximum Ratings table under "ID @ TC = 100°C Continuous Drain Current, VGS @ 10V". This value reflects package thermal limits and is lower than the silicon-limited 120 A at 25°C due to reduced thermal headroom.

Does IRL1404ZLPBF require a gate resistor for safe operation in a 20 kHz PWM circuit?

A gate resistor is recommended to dampen ringing and control dV/dt, especially given its 75 nC total gate charge and 40 V rating. A 4.0 Ω resistor is used in the official switching test circuit (Fig. 18a), yielding measured 19 ns turn-on delay and 180 ns rise time-values confirmed in the Electrical Characteristics table.

Can IRL1404ZLPBF be used in parallel configurations for >200 A applications?

Yes-its positive R_DS(on) temperature coefficient (normalized R_DS(on) increases with temperature, per Fig. 10) enables inherent current sharing. Parallel operation requires matched layout, identical gate drive paths, and thermal coupling to ensure balanced conduction; Infineon confirms this behavior in Application Note AN-1001.

Is the body diode in IRL1404ZLPBF suitable for reverse recovery in synchronous rectification?

Yes-the body diode is characterized with 26 ns typical reverse recovery time (trr) and 18 nC reverse recovery charge (Qrr) at I_F = 75 A, making it viable for synchronous rectification in 100–500 kHz DC-DC converters. Its 1.3 V forward voltage at 75 A is lower than discrete Schottky diodes rated for similar currents.

IRL1404ZLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.1mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:: 2.7V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 5080 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 230W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRL1404ZLPBF FAQ

1.How can I place an order for IRL1404ZLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL1404ZLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL1404ZLPBF reliable?

The price and inventory of IRL1404ZLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL1404ZLPBF is usually 5 days.

3.What payment methods are accepted for IRL1404ZLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL1404ZLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL1404ZLPBF?

IRL1404ZLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL1404ZLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL1404ZLPBF?

For technical support, including IRL1404ZLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL1404ZLPBF requirements.

6.How does Aetrix verify that IRL1404ZLPBF is sourced from the original manufacturer or authorized distributors?

All IRL1404ZLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL1404ZLPBF meets industry standards.

7.What is the process for return or replacement of IRL1404ZLPBF?

All IRL1404ZLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL1404ZLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL1404ZLPBF part is unused and in its original packaging.

Return procedure for IRL1404ZLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…