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Infineon Technologies IRL1404ZS

Part No.:
IRL1404ZS
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIRL1404ZS.pdf
Description:
MOSFET N-CH 40V 75A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,434

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Product details

Overview

IRL1404ZS from Infineon Technologies is a logic-level N-channel HEXFET® Power MOSFET designed for high-current, low-voltage switching in power supplies, motor drives, and DC-DC converters. It features 40 V VDSS, 3.1 mΩ RDS(on) at VGS = 10 V, 120 A continuous drain current (TC = 25°C), 175°C maximum junction temperature, and rated repetitive avalanche energy up to 490 mJ.

For engineers reviewing the IRL1404ZS datasheet, IRL1404ZS pinout, IRL1404ZS application, or IRL1404ZS equivalent, key selection criteria include on-resistance at 4.5 V gate drive, thermal performance under pulsed load, body diode recovery characteristics, and package-specific current derating in TO-262 (I²P) mounting configurations.

Technical Context

This MOSFET employs advanced silicon processing to minimize conduction losses while maintaining robust switching behavior. Its ultra-low RDS(on) enables high-efficiency operation in synchronous rectification and high-side/low-side switch topologies with gate drive voltages as low as 4.5 V.

The device integrates a fast-recovery body diode (trr = 26–39 ns, Qrr = 18–27 nC) and supports unclamped inductive switching with validated repetitive avalanche capability up to Tjmax, enabled by optimized die metallization and bond wire design.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS40 V - Maximum blocking voltage before avalanche onset; suitable for 24 V and 36 V bus systems.
RDS(on) @ VGS = 10 V3.1 mΩ typ - Enables ≤ 4.7 W conduction loss at 120 A; critical for thermal management in compact PCB layouts.
ID Continuous @ TC = 25°C120 A - Silicon-limited current; requires heatsinking to sustain full rating.
TJ max175°C - Allows operation in high-ambient industrial environments without derating below 125°C ambient.
EAS Tested490 mJ - Validated single-pulse avalanche energy; supports reliable inductive turn-off in motor control.
Qg75 nC typ - Determines gate driver power requirement; compatible with standard 1–2 A peak drivers.
trr26 ns min - Reduces switching loss and EMI during body diode commutation in buck and half-bridge stages.

Pinout & Package

IRL1404ZS is supplied in the TO-262 (I²P) package - a surface-mount variant of TO-220 with isolated tab and gull-wing leads. Thermal resistance RθJC = 0.65°C/W enables direct heatsink attachment via the exposed drain pad.

Pin/TerminalCircuit RoleDesign Meaning
Drain (Tab)Main current path output / heat sink interfaceElectrically connected to package tab; must be isolated from PCB ground unless used as common drain node.
SourceReference node for gate drive and current sensingLow-inductance source connection critical for stable gate control; internal LS = 7.5 nH limits high-di/dt noise coupling.
GateControl terminal for channel conductionLogic-compatible threshold (VGS(th) = 1.4–2.7 V); requires <200 nA leakage handling in high-impedance bias networks.

Key Features

FeatureDesign Value
Logic-level gate drive compatibilityGuaranteed RDS(on) ≤ 5.9 mΩ at VGS = 4.5 V - eliminates need for gate boosters in 5 V microcontroller-driven systems.
Repetitive avalanche ratingValidated up to Tjmax with EAR = 220 mJ at 1% duty cycle - enables ruggedized operation in solenoid and relay driving without snubbers.
Enhanced thermal performanceRθJC = 0.65°C/W - allows >100 W dissipation with modest heatsink; superior to TO-220AB (RθJC = 0.75°C/W) in same footprint.
Fast body diode recoveryQrr = 18–27 nC with trr = 26–39 ns - reduces cross-conduction loss and voltage overshoot in synchronous rectifiers.

Applications

DC-DC Synchronous RectifierAutomotive Body Control Module

Use Scenario: High-efficiency 12 V → 3.3 V/5 V buck converter in infotainment head unit.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; switched at 300–500 kHz.

Use Value: Reduces conduction loss by >65% vs. 40 V Schottky, enabling >94% efficiency at 20 A load with minimal heatsink area.

Use Scenario: Load switching for HVAC blower motor and window lift actuators.

IC Role / Device Role / Timing Role: High-current N-channel high-side switch controlled via charge pump gate driver.

Use Value: Withstands 100 A inrush and 75 A steady-state loads while surviving load-dump transients up to 40 V.

Industrial Motor StarterServer VRM High-Side Switch

Use Scenario: Soft-start circuit for 3-phase inverter input stage in PLC-controlled conveyor system.

IC Role / Device Role / Timing Role: Inrush current limiter using PWM-controlled linear mode operation.

Use Value: 175°C Tjmax and 490 mJ EAS allow safe linear-mode operation during 500 ms startup surge without thermal shutdown.

Use Scenario: High-side switch in 48 V → 12 V intermediate bus converter for CPU/GPU power delivery.

IC Role / Device Role / Timing Role: Primary switching element in interleaved two-phase buck topology.

Use Value: 3.1 mΩ RDS(on) minimizes conduction loss at 100 A per phase; Ciss = 5080 pF enables stable gate drive with 1 Ω series resistor.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current logic-level MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STL120N4L10AGRDS(on) = 3.0 mΩ @ 10 V but higher Qg = 105 nC; TO-263 package with RθJC = 0.7°C/WRequires stronger gate driver; less effective heatsinking than IRL1404ZS in same board areaPrefer when lower RDS(on) outweighs gate drive overhead and thermal margin is available.
IXTP120N04T4RDS(on) = 3.2 mΩ @ 10 V; TO-220 package with RθJC = 0.75°C/W; no specified repetitive avalanche ratingLacks validated avalanche endurance; unsuitable for unclamped inductive loadsSelect only for resistive or lightly inductive switching where avalanche stress is absent.

Compared with STL120N4L10AG and IXTP120N04T4, IRL1404ZS offers superior thermal resistance and guaranteed repetitive avalanche performance-critical for motor drive and industrial power supply designs where reliability under transient overload is mandatory.

Availability

IRL1404ZS is available at Aetrix Electronics and suitable for automotive body electronics, industrial motor starters, server VRM stages, and high-efficiency DC-DC converters requiring stable component supply across multi-year production cycles.

Supply support for IRL1404ZS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The IRL1404ZS belongs to Infineon's HEXFET® logic-level Power MOSFET product line, engineered specifically for high-current, low-voltage switching in space-constrained and thermally demanding applications such as automotive subsystems and telecom power systems.

FAQ

What is the maximum continuous drain current for IRL1404ZS at 100°C case temperature?

The maximum continuous drain current for IRL1404ZS at TC = 100°C is 140 A, as specified in the Absolute Maximum Ratings table under "ID @ TC = 100°C Continuous Drain Current, VGS @ 10V". This rating assumes proper heatsinking and is limited by silicon thermal capacity-not package constraints.

Does IRL1404ZS support gate drive from a 3.3 V microcontroller?

No-IRL1404ZS is not fully enhanced at 3.3 V. Its gate threshold voltage ranges from 1.4 V to 2.7 V, but RDS(on) is only guaranteed ≤5.9 mΩ at VGS = 4.5 V. At 3.3 V, RDS(on) rises significantly (not characterized), risking excessive conduction loss and thermal runaway under load.

How does the TO-262 package of IRL1404ZS differ electrically from TO-220AB?

The TO-262 (I²P) package uses gull-wing leads instead of through-hole pins, offering lower assembly cost and improved mechanical stability. Electrically, it shares identical die and RDS(on)/Qg specs, but achieves RθJC = 0.65°C/W versus 0.75°C/W for TO-220AB due to optimized thermal path geometry and solder joint design.

Is the body diode in IRL1404ZS suitable for reverse recovery in hard-switched PFC stages?

No-the body diode is optimized for synchronous rectification, not PFC. Its trr = 26–39 ns and Qrr = 18–27 nC are insufficient for continuous 50–100 kHz hard-switched boost PFC; dedicated ultrafast diodes or SiC Schottkys are required to avoid excessive loss and voltage spikes.

IRL1404ZS Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
3.1mOhm @ 75A, 10V
Vgs(th) (Max) @ Id:
2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
110 nC @ 5 V
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
5080 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
230W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

IRL1404ZS FAQ

1.How can I place an order for IRL1404ZS through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL1404ZS on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL1404ZS reliable?

The price and inventory of IRL1404ZS are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL1404ZS is usually 5 days.

3.What payment methods are accepted for IRL1404ZS?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL1404ZS transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL1404ZS?

IRL1404ZS orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL1404ZS order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL1404ZS?

For technical support, including IRL1404ZS datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL1404ZS requirements.

6.How does Aetrix verify that IRL1404ZS is sourced from the original manufacturer or authorized distributors?

All IRL1404ZS products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL1404ZS meets industry standards.

7.What is the process for return or replacement of IRL1404ZS?

All IRL1404ZS units undergo pre-shipment inspection (PSI). If there is an issue with IRL1404ZS, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL1404ZS part is unused and in its original packaging.

Return procedure for IRL1404ZS:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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