Infineon Technologies IRL1404ZSPBF
- Part No.:
- IRL1404ZSPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRL1404ZSPBF.pdf
- Description:
- MOSFET N-CH 40V 75A D2PAK
- Quantity:
- Payment:

- Shipping:

Inventory:5,464
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Product details
Overview
IRL1404ZSPBF from Infineon Technologies is a logic-level N-channel Power MOSFET in D2PAK (TO-263) package, rated for 40V VDSS, 3.1mΩ RDS(on) at VGS = 10V, and 120A continuous drain current at TC = 25°C. It features 175°C junction temperature rating, fast switching (tr = 180ns), and tested repetitive avalanche capability up to Tjmax. It is used in high-current DC-DC converters, motor drives, and battery protection circuits.
For engineers reviewing the IRL1404ZSPBF datasheet, IRL1404ZSPBF pinout, IRL1404ZSPBF application, or IRL1404ZSPBF equivalent, key selection criteria include its ultra-low on-resistance at 4.5V gate drive, body diode reverse recovery charge (Qrr = 18–27nC), thermal resistance (RθJC = 0.65°C/W), and avalanche energy rating (EAS = 230mJ).
Technical Context
This device employs Infineon's HEXFET® advanced process technology optimized for low conduction loss and high pulse current handling. Its gate threshold voltage (VGS(th) = 1.4–2.7V) enables direct drive from 3.3V/5V logic, while the 75nC total gate charge supports efficient high-frequency switching up to several hundred kHz.
The integrated body diode exhibits low forward voltage (VSD ≤ 1.3V at 75A) and fast reverse recovery (trr = 26–39ns), making it suitable for synchronous rectification and freewheeling in hard-switched topologies. Thermal performance is defined by a 0.65°C/W junction-to-case resistance and validated 175°C maximum operating temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40V - Maximum blocking voltage before avalanche; sets upper limit for bus voltage in 12V/24V systems. |
| RDS(on) @ VGS=10V | 3.1mΩ (typ) - Enables <1W conduction loss at 75A, critical for high-efficiency power stages. |
| ID Continuous @ TC=25°C | 120A - Silicon-limited current; requires robust heatsinking to sustain in real-world PCB mount. |
| Qg | 75nC (typ) - Determines gate driver power requirement and switching loss at 100kHz+ frequencies. |
| EAS | 230mJ - Single-pulse avalanche energy rating; allows safe operation under inductive turn-off stress without snubbers. |
| TJ max | 175°C - Enables reliable operation in automotive under-hood and industrial motor control environments. |
| tr/tf | 180ns/49ns - Fast edge rates reduce switching transition time, lowering overlap losses in PWM applications. |
Pinout & Package
IRL1404ZSPBF is housed in a surface-mount D2PAK (TO-263) package with three terminals: Drain (tab), Source (pins 1 & 2), and Gate (pin 3). The exposed drain pad provides low-inductance, high-current path and serves as primary thermal interface to PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current-carrying terminal, electrically connected to package backside | Must be soldered to large copper pour for thermal and current handling; contributes <4.5nH internal inductance. |
| Source (Pins 1 & 2) | Reference node for gate drive and current return path | Dual-pin layout reduces source inductance (LS = 7.5nH); critical for minimizing gate oscillation during fast switching. |
| Gate (Pin 3) | Control electrode for channel conduction | Logic-level compatible (VGS(th) ≤ 2.7V); requires <75nC charge for full enhancement; sensitive to ESD. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS = 4.5V, enabling direct interface with microcontrollers and low-voltage PWM controllers. |
| Ultra-low RDS(on) | 3.1mΩ typical at 10V gate drive - reduces I²R losses by >40% vs. legacy 5mΩ MOSFETs in 12V battery systems. |
| Repetitive avalanche rated | Tested to 230mJ single-pulse and qualified for repetitive operation within thermal limits - eliminates need for external clamping in motor drive flyback. |
| 175°C junction rating | Supports sustained operation in sealed enclosures or high-ambient environments without derating below 120A. |
| Lead-free construction | Complies with RoHS Directive 2011/65/EU; compatible with standard Pb-free reflow profiles (peak 260°C). |
Applications
| Automotive DC-DC Converters | Industrial Motor Drives |
|---|---|
Use Scenario: 12V-to-48V bidirectional buck-boost converter in 48V mild hybrid vehicles. IC Role / Device Role / Timing Role: Primary high-side synchronous rectifier switch with 100kHz PWM and 50% duty cycle. Use Value: 3.1mΩ RDS(on) limits conduction loss to <0.3W at 75A, enabling >96% peak efficiency without forced air cooling. | Use Scenario: 3-phase inverter stage driving 5kW BLDC motor in HVAC compressors. IC Role / Device Role / Timing Role: Low-side switching element with gate-driven dead-time control and body-diode freewheeling. Use Value: 26–39ns trr and 18–27nC Qrr minimize shoot-through risk and commutation losses during phase current reversal. |
| Server PSU ORing FETs | Battery Protection Circuits |
Use Scenario: Hot-swap ORing configuration in redundant 12V server power supplies. IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET for reverse-current blocking and low-loss forward conduction. Use Value: 175°C TJmax and 120A rating support continuous 80A load current with <0.5°C/W board-level thermal design. | Use Scenario: Overcurrent and short-circuit protection in 4S Li-ion battery packs (16.8V nominal). IC Role / Device Role / Timing Role: Main discharge FET controlled by battery management IC with fast fault response (<1μs). Use Value: 230mJ EAS rating withstands 100A short-circuit events for >100μs without failure, enabling robust hardware-level protection. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL120N4L10AG | RDS(on) = 3.0mΩ @ 10V, Qg = 85nC, DFN8 5×6 package | Lower thermal resistance (RθJC = 0.5°C/W) but no exposed drain tab; unsuitable for high-current through-hole replacement | Select when PCB space is constrained and thermal interface uses thermal vias instead of large copper pour. |
| ON Semiconductor NTMFS4C09NT1G | RDS(on) = 3.2mΩ @ 10V, Qg = 68nC, SO-8FL package | Smaller footprint and lower gate charge, but ID limited to 80A; not rated for repetitive avalanche | Prefer for compact, medium-current designs where avalanche robustness is not required and gate drive strength is limited. |
Compared with STL120N4L10AG and NTMFS4C09NT1G, IRL1404ZSPBF offers superior avalanche ruggedness and higher current capability in a thermally optimized D2PAK package-making it the preferred choice for industrial motor control and automotive power conversion where reliability under transient stress is mandatory.
Availability
IRL1404ZSPBF is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and battery protection circuits requiring stable component supply across multi-year production cycles.
Supply support for IRL1404ZSPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q101.
This part belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-current, high-reliability switching in automotive, industrial, and computing power systems where low RDS(on), fast switching, and thermal resilience are critical.
FAQ
What is the maximum continuous drain current for IRL1404ZSPBF at 100°C case temperature?
The maximum continuous drain current at TC = 100°C is 140A, as specified in the Absolute Maximum Ratings table under "ID @ TC = 100°C Continuous Drain Current, VGS @ 10V". This reflects silicon-limited current capacity, distinct from package-limited 75A at same temperature.
Does IRL1404ZSPBF have a qualified repetitive avalanche rating?
Yes - the datasheet explicitly states "Repetitive Avalanche Allowed up to Tjmax" and provides curves in Figures 15 and 16 showing allowable avalanche current versus pulse width and energy versus starting junction temperature. It is 100% production-tested to 230mJ single-pulse EAS.
Can IRL1404ZSPBF be driven directly from a 3.3V microcontroller GPIO?
No - while its gate threshold voltage starts at 1.4V, full enhancement (to achieve 3.1mΩ RDS(on)) requires ≥4.5V gate drive. At 3.3V, RDS(on) rises significantly (>10mΩ), increasing conduction loss. A level-shifting gate driver or dedicated 5V/10V supply is required for optimal performance.
What is the recommended PCB footprint and thermal relief for the D2PAK drain pad?
Infineon Application Note AN-994 specifies a minimum 1.0" × 1.0" FR-4 copper area with ≥6 thermal vias (0.3mm diameter, filled or plated) connecting to inner-layer ground planes. Solder mask defined pads and 100% copper fill are required to achieve the rated 0.65°C/W RθJC performance.
IRL1404ZSPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.1mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id:
- 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 110 nC @ 5 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5080 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 230W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRL1404ZSPBF FAQ
1.How can I place an order for IRL1404ZSPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRL1404ZSPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRL1404ZSPBF reliable?
The price and inventory of IRL1404ZSPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL1404ZSPBF is usually 5 days.
3.What payment methods are accepted for IRL1404ZSPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL1404ZSPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRL1404ZSPBF?
IRL1404ZSPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRL1404ZSPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRL1404ZSPBF?
For technical support, including IRL1404ZSPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL1404ZSPBF requirements.
6.How does Aetrix verify that IRL1404ZSPBF is sourced from the original manufacturer or authorized distributors?
All IRL1404ZSPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL1404ZSPBF meets industry standards.
7.What is the process for return or replacement of IRL1404ZSPBF?
All IRL1404ZSPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL1404ZSPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRL1404ZSPBF part is unused and in its original packaging.
Return procedure for IRL1404ZSPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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