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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRL2203NL

Name: IRL2203NL
Brand: Infineon Technologies
SKU: IRL2203NL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRL2203NL

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRL2203NL.pdf

Description:: MOSFET N-CH 30V 116A TO262

Quantity:: RFQ Add To RFQ list

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Inventory:6,370

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Product details

Overview

IRL2203NL from Infineon Technologies (formerly International Rectifier) is a through-hole N-channel enhancement-mode power MOSFET designed for high-current DC-DC conversion, motor drive, and battery protection circuits. It features 30V V_DS, 7.0mΩ R_DS(on) at V_GS = 10V, 116A continuous drain current at T_C = 25°C, and is fully avalanche-rated for robust transient handling in industrial power supplies.

For engineers reviewing the IRL2203NL datasheet, IRL2203NL pinout, IRL2203NL application, or IRL2203NL equivalent, key selection criteria include its low on-resistance at 4.5V gate drive, TO-262 package thermal performance, body diode recovery characteristics (t_rr = 56–84 ns), and suitability for synchronous rectification and high-efficiency switching regulators.

Technical Context

This MOSFET employs advanced HEXFET® process technology to achieve ultra-low R_DS(on) per die area while maintaining fast switching (t_r = 160 ns, t_f = 66 ns) and rugged dv/dt immunity (175°C max junction temperature). Its intrinsic body diode supports bidirectional current flow in H-bridge and flyback topologies.

The device is fully specified for repetitive avalanche energy (E_AS = 1320 mJ) and dynamic dv/dt rating, enabling reliable operation under inductive load switching and fault conditions without external snubbers in many designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage in high-side switch or half-bridge leg without breakdown
R_DS(on)	7.0 mΩ @ V_GS = 10 V - Enables <1W conduction loss at 116A, critical for high-current PCB traces
I_D (continuous)	116 A @ T_C = 25°C - Supports high-power motor drivers and server VRMs with minimal parallel devices
Q_g	60 nC - Determines gate driver power requirement; compatible with standard 1A peak drivers
t_rr	56–84 ns - Limits reverse recovery losses in synchronous rectifiers and reduces EMI in hard-switched converters
E_AS	1320 mJ - Allows safe single-pulse inductive energy absorption up to 60A/0.16mH without failure
R_θJC	0.85 °C/W - Enables >90W dissipation with modest heatsinking when mounted to copper plane

Pinout & Package

IRL2203NL uses the TO-262 (I²PAK) through-hole package: three leads, isolated tab, vertical mounting orientation, and optimized thermal path from die to case via soldered tab.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat sink interface	Electrically connected to metal tab; must be insulated from chassis unless referenced to system ground
Source	Reference node for gate control and current return	Low-inductance connection point for sense resistors and gate driver return path
Gate	Control terminal for channel modulation	High-impedance input requiring <60nC charge; sensitive to ESD and ringing without proper RC damping

Key Features

Feature	Design Value
Ultra-low R_DS(on)	7.0 mΩ enables <0.8W conduction loss at 100A, reducing thermal design burden
Fully avalanche-rated	1320 mJ single-pulse energy rating allows operation in unclamped inductive switching without derating
100% R_G tested	Guarantees gate resistance between 0.2–3.0 Ω, ensuring consistent turn-on timing across production lots
Lead-free construction	Pb-free plating and RoHS-compliant materials meet IPC-J-STD-020 reflow requirements
175°C max junction temperature	Supports operation in sealed enclosures or high-ambient environments like automotive engine bays

Applications

Motor Drive Inverter

DC-DC Synchronous Rectifier

Use Scenario: 24V/48V BLDC motor controller with 3-phase inverter stage driving 5–10kW industrial fans.

IC Role / Device Role / Timing Role: Low-side switching element in each half-bridge leg, commutated at 10–20 kHz with dead-time control.

Use Value: 7.0mΩ R_DS(on) minimizes I²R losses during high-current PWM periods, improving efficiency by ≥1.2% over 12mΩ alternatives.

Use Scenario: Secondary-side synchronous rectification in 48V-to-12V isolated buck converter for telecom power systems.

IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diode, driven by transformer-coupled gate signal synchronized to primary switch.

Use Value: Body diode t_rr ≤ 84 ns prevents cross-conduction loss; low Q_g enables clean turn-off even with limited gate drive slew rate.

Battery Protection Circuit

Industrial Power Supply Switch

Use Scenario: Smart Li-ion battery pack with integrated protection IC controlling charge/discharge FETs for 10S4P configuration.

IC Role / Device Role / Timing Role: Main discharge switch placed between battery stack and load, controlled by protection ASIC via logic-level gate drive.

Use Value: Guaranteed turn-on at V_GS = 4.5V ensures full enhancement under low-voltage fault conditions, preventing unsafe open-circuit shutdown.

Use Scenario: High-current hot-swap controller in 24V industrial PLC backplane supplying multiple I/O modules.

IC Role / Device Role / Timing Role: Inrush-limiting and fault-isolation switch placed upstream of downstream DC-DC converters.

Use Value: Avalanche rating absorbs energy from cable inductance during hot-plug events, eliminating need for external TVS clamping.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404PBF	Higher R_DS(on) (4.7mΩ vs. 7.0mΩ), higher Q_g (131nC), TO-220 package	Larger footprint, lower current density, less suitable for compact high-current layouts	Prefer IRL2203NL where board space and thermal resistance are constrained
STP110N3LLH6	Lower V_DS (30V same), lower R_DS(on) (5.2mΩ), but only rated to 175°C with reduced avalanche spec	No guaranteed E_AS rating; requires additional overvoltage protection in inductive loads	Choose IRL2203NL when repetitive avalanche capability is required without external components

Compared with IRF1404PBF and STP110N3LLH6, IRL2203NL offers superior thermal resistance (R_θJC = 0.85°C/W), validated avalanche robustness, and TO-262 mechanical stability-making it optimal for high-reliability, high-current, through-hole power stages where layout density and fault tolerance are critical.

Availability

IRL2203NL is available at Aetrix Electronics and suitable for motor drives, battery management systems, and industrial DC-DC converters requiring stable component supply and long-term manufacturing continuity.

Supply support for IRL2203NL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices and wide-bandgap solutions.

The IRL2203NL belongs to Infineon's legacy HEXFET® power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial and transportation power systems where ruggedness and thermal performance are paramount.

FAQ

Is IRL2203NL suitable for 4.5V gate drive applications?

Yes. The device is characterized down to V_GS = 4.5V, with R_DS(on) increasing to ~10.5mΩ and I_D remaining >80A at T_C = 25°C. Its gate threshold voltage range (1.0–3.0V) ensures reliable enhancement with standard logic-level microcontrollers and gate drivers.

What is the maximum recommended PCB copper area for thermal performance?

Per IR application note AN-994, a minimum 1" × 1" (25.4mm × 25.4mm) FR-4 copper pour with 2oz thickness and thermal vias to inner layers achieves R_θJA ≈ 40°C/W. Larger areas further reduce junction temperature-critical for sustained 100A operation.

Does IRL2203NL have a built-in body diode, and what are its recovery specs?

Yes. It integrates a monolithic p-n body diode with forward voltage V_SD = 1.2V at 60A and reverse recovery time t_rr = 56–84 ns (T_J = 25°C). Q_rr is 110–170 nC, supporting efficient synchronous rectification when properly timed.

Can IRL2203NL replace IRL2203NS in surface-mount designs?

No. IRL2203NL uses TO-262 (through-hole), while IRL2203NS uses D2Pak (surface-mount). They share identical electrical specs but differ mechanically-mounting method, thermal pad access, and reflow compatibility. Direct replacement requires PCB redesign and assembly process validation.

IRL2203NL Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 116A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7mOhm @ 60A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 4.5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 3290 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 180W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRL2203NL FAQ

1.How can I place an order for IRL2203NL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL2203NL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL2203NL reliable?

The price and inventory of IRL2203NL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL2203NL is usually 5 days.

3.What payment methods are accepted for IRL2203NL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL2203NL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL2203NL?

IRL2203NL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL2203NL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL2203NL?

For technical support, including IRL2203NL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL2203NL requirements.

6.How does Aetrix verify that IRL2203NL is sourced from the original manufacturer or authorized distributors?

All IRL2203NL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL2203NL meets industry standards.

7.What is the process for return or replacement of IRL2203NL?

All IRL2203NL units undergo pre-shipment inspection (PSI). If there is an issue with IRL2203NL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL2203NL part is unused and in its original packaging.

Return procedure for IRL2203NL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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