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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRL2203NPBF

Name: IRL2203NPBF
Brand: Infineon Technologies
SKU: IRL2203NPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRL2203NPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRL2203NPBF.pdf

Description:: MOSFET N-CH 30V 116A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:9,260

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Product details

Overview

IRL2203NPBF from Infineon Technologies (formerly International Rectifier) is a 30V, 116A N-channel enhancement-mode power MOSFET in TO-220AB package, featuring 7.0 mΩ R_DS(on) at V_GS = 10 V, fully avalanche-rated, and optimized for high-current DC-DC conversion, motor drive, and battery protection circuits.

For engineers reviewing the IRL2203NPBF datasheet, IRL2203NPBF pinout, IRL2203NPBF application, or IRL2203NPBF equivalent, key selection criteria include its low on-resistance at 4.5 V gate drive (10 mΩ), 1320 mJ single-pulse avalanche energy, 175°C junction rating, and TO-220AB thermal resistance of 0.85°C/W (junction-to-case).

Technical Context

This HEXFET® device uses advanced silicon processing to achieve ultra-low R_DS(on) per die area while maintaining robust dv/dt immunity (5.0 V/ns) and fast switching (tr = 160 ns, tf = 66 ns). Its body diode exhibits 56–84 ns reverse recovery time and 110–170 nC Q_rr, enabling efficient synchronous rectification.

The MOSFET supports logic-level gate drive down to 4.5 V, with V_GS(th) between 1.0 V and 2.0 V, and integrates internal source/drain inductance (L_S = 7.5 nH, L_D = 4.5 nH) critical for high-frequency layout stability.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage before avalanche onset; defines safe operation in 24 V systems with transient margin.
R_DS(on) @ 10 V	7.0 mΩ - Enables ≤0.5 W conduction loss at 85 A continuous current, reducing heatsink requirements.
R_DS(on) @ 4.5 V	10 mΩ - Ensures usable on-state performance with standard 5 V microcontroller GPIO or PWM drivers.
I_D @ T_C = 25°C	116 A - Continuous drain current rating under ideal heatsinking; limited by package thermal resistance (0.85°C/W).
E_AS	1320 mJ - Single-pulse avalanche energy capacity; allows reliable operation during inductive load turn-off without external snubbers.
Q_g	60 nC - Total gate charge determines driver strength requirement; compatible with common 1–2 A peak gate drivers.
T_J max	+175°C - Extended junction temperature rating enables operation in sealed enclosures or high-ambient industrial environments.

Pinout & Package

IRL2203NPBF is housed in a TO-220AB package with isolated tab (drain-connected), standardized lead pitch, and mechanical mounting provisions (6-32/M3 screw, 1.1 N·m torque). The case provides 0.50°C/W thermal resistance to heatsink when greased and flat-mounted.

Pin/Terminal	Circuit Role	Design Meaning
1 - Gate	Control electrode	High-impedance input requiring <60 nC total charge; sensitive to ESD; must be driven with low-impedance path to avoid oscillation.
2 - Drain	Main current output terminal	Internally connected to metal tab; electrically tied to heatsink; requires isolation if heatsink is grounded.
3 - Source	Reference node / return path	Common return for gate drive and load current; establishes local ground reference for control circuitry.
4 - Drain	Secondary drain connection	Redundant drain pin improving current sharing and thermal distribution; paralleled internally with Pin 2.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	7.0 mΩ at 10 V gate drive reduces conduction losses by >30% vs. legacy 30 V MOSFETs in 48 V bus applications.
Full avalanche rating	Rated for 1320 mJ single-pulse and 18 mJ repetitive avalanche energy-eliminates need for external clamping in motor H-bridge freewheeling.
Logic-level gate	V_GS(th) = 1.0–2.0 V and R_DS(on) = 10 mΩ @ 4.5 V enable direct drive from 5 V MCUs without level-shifting.
Enhanced dv/dt immunity	5.0 V/ns rated peak diode recovery dv/dt prevents false turn-on during fast inductive switching transients.
Lead-free construction	Pb-free plating and RoHS-compliant packaging meet industrial environmental compliance requirements without derating.

Applications

DC-DC Converter Primary Switch

Brushed DC Motor High-Side Driver

Use Scenario: 24 V input, 12 V/50 A buck converter in telecom power shelf.

IC Role / Device Role / Timing Role: Main synchronous rectifier switch operating at 200 kHz with 4.5 V gate drive from controller IC.

Use Value: 7.0 mΩ R_DS(on) limits conduction loss to 0.35 W at full load, enabling natural convection cooling.

Use Scenario: 24 V, 30 A brushed motor in automated gate actuator with bidirectional control.

IC Role / Device Role / Timing Role: High-side switch in half-bridge configuration, commutated at ≤5 kHz with PWM duty cycling.

Use Value: 1320 mJ E_AS absorbs inductive kickback during rapid direction reversal without snubber components.

Battery Protection FET

UPS Inverter Output Stage

Use Scenario: 24 V LiFePO₄ battery pack with overcurrent cutoff at 100 A.

IC Role / Device Role / Timing Role: Bidirectional current-sensing FET in protection IC-controlled discharge path.

Use Value: 116 A continuous rating and 400 A pulsed capability support short-circuit response within 100 µs.

Use Scenario: 1 kVA online UPS with 24 V DC bus feeding full-bridge inverter stage.

IC Role / Device Role / Timing Role: Low-side switch in full-bridge topology, switching at 16 kHz with zero-voltage transition assist.

Use Value: 56 ns t_rr and 110 nC Q_rr minimize body-diode conduction loss during dead-time intervals.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404PBF	R_DS(on) = 4.9 mΩ @ 10 V; V_DSS = 40 V; higher gate charge (131 nC); TO-220AB	Better for 36 V systems but requires stronger gate driver; less suitable for 5 V logic drive	Select when higher voltage margin and lower R_DS(on) outweigh gate drive complexity.
STP36NF20	R_DS(on) = 5.5 mΩ @ 10 V; V_DSS = 200 V; 175°C rating; TO-220FP (full-pack)	Higher voltage rating trades off conduction efficiency in 24–30 V systems; smaller footprint but higher thermal resistance	Prefer only when system requires >100 V blocking or space-constrained PCB layout.

Compared with IRL2203NPBF, IRF1404PBF offers lower on-resistance at higher voltage stress but demands more gate drive power, while STP36NF20 sacrifices conduction efficiency for wide-voltage flexibility and compact packaging-neither matches the IRL2203NPBF's optimal balance of 30 V rating, 4.5 V drive compatibility, and avalanche ruggedness.

Availability

IRL2203NPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, battery management systems, and uninterruptible power supplies requiring stable component supply across industrial production cycles.

Supply support for IRL2203NPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues to develop, manufacture, and support the HEXFET® power MOSFET portfolio for industrial, automotive, and computing markets.

The IRL2203NPBF belongs to the logic-level HEXFET® family, engineered specifically for high-efficiency, high-current switching in 12–36 V systems where gate drive voltage headroom is constrained and avalanche reliability is mission-critical.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRL2203NPBF supports 82 A continuous drain current at T_C = 100°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and must be validated against actual board-level heatsinking and ambient conditions using the 1.2 W/°C linear derating factor.

Is the TO-220AB package lead-free and RoHS compliant?

Yes-the "PbF" suffix in IRL2203NPBF explicitly denotes lead-free (Pb-free) termination and full compliance with EU RoHS Directive 2011/65/EU. The device uses matte tin plating over copper leads and meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) for unlimited floor life.

Can this MOSFET be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (see Fig 4) ensures inherent current sharing when paralleled. Successful implementation requires matched gate drive impedance, symmetrical PCB layout, and individual gate resistors (≥10 Ω) to dampen oscillation; thermal coupling between devices improves balance.

Does the body diode support synchronous rectification at 200 kHz?

Yes-the body diode's 56 ns typical reverse recovery time (t_rr) and 110 nC reverse recovery charge (Q_rr) allow effective synchronous rectification up to 250 kHz in hard-switched topologies, provided gate drive timing avoids shoot-through and layout minimizes parasitic inductance.

IRL2203NPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 116A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7mOhm @ 60A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 4.5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 3290 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 180W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRL2203NPBF FAQ

1.How can I place an order for IRL2203NPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL2203NPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL2203NPBF reliable?

The price and inventory of IRL2203NPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL2203NPBF is usually 5 days.

3.What payment methods are accepted for IRL2203NPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL2203NPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL2203NPBF?

IRL2203NPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL2203NPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL2203NPBF?

For technical support, including IRL2203NPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL2203NPBF requirements.

6.How does Aetrix verify that IRL2203NPBF is sourced from the original manufacturer or authorized distributors?

All IRL2203NPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL2203NPBF meets industry standards.

7.What is the process for return or replacement of IRL2203NPBF?

All IRL2203NPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL2203NPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL2203NPBF part is unused and in its original packaging.

Return procedure for IRL2203NPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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