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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRL2203NSTRLPBF

Name: IRL2203NSTRLPBF
Brand: Infineon Technologies
SKU: IRL2203NSTRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRL2203NSTRLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRL2203NSTRLPBF.pdf

Description:: MOSFET N-CH 30V 116A D2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:9,811

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Product details

Overview

IRL2203NSTRLPBF from Infineon Technologies (formerly International Rectifier) is a 30V, 116A N-channel enhancement-mode power MOSFET in D2PAK (TO-262) surface-mount package, featuring 7.0mΩ R_DS(on) at V_GS = 10V, fully avalanche-rated operation, and 175°C maximum junction temperature - deployed in high-current DC-DC converter primary-side switches and motor phase-leg drivers.

For engineers reviewing the IRL2203NSTRLPBF datasheet, IRL2203NSTRLPBF pinout, IRL2203NSTRLPBF application, or IRL2203NSTRLPBF equivalent, key selection criteria include its low on-resistance under 4.5V gate drive, robust unclamped inductive switching capability (E_AS = 1320 mJ), thermal resistance (R_θJC = 0.85°C/W), and D2PAK package suitability for high-power PCB-mounted designs requiring >80A continuous conduction.

Technical Context

This device uses advanced HEXFET® process technology to achieve ultra-low R_DS(on) per die area while maintaining fast switching (t_r = 160 ns, t_f = 66 ns) and rugged dv/dt immunity. Its integrated body diode supports synchronous rectification and freewheeling in half-bridge topologies.

The MOSFET is fully characterized for repetitive avalanche energy (E_AR = 290 mJ), rated for 100% R_G tested gate reliability, and specified across –55°C to +175°C junction temperature range with dynamic V(BR)_DSS temperature coefficient of 0.029 V/°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage before avalanche; sets upper limit for bus voltage in 24V industrial systems.
R_DS(on) @ V_GS=10V	7.0 mΩ - Enables <1W conduction loss at 116A; critical for high-efficiency 48V input converters.
I_D @ T_C=25°C	116 A - Continuous drain current rating under ideal heatsink conditions; defines peak power stage capacity.
E_AS	1320 mJ - Single-pulse avalanche energy; allows safe operation during inductive turn-off transients without snubbers.
Q_g	60 nC - Total gate charge; determines driver strength requirement for 100 kHz+ switching in SMPS designs.
R_θJC	0.85 °C/W - Junction-to-case thermal resistance; enables direct thermal interface to heatsink for >90W dissipation.
t_r/t_f	160 ns / 66 ns - Rise/fall times at I_D=60A, V_DD=24V; supports efficient hard-switched operation up to 500 kHz.

Pinout & Package

D2PAK (TO-262) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration optimized for high-current PCB layout and automated assembly.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to ground plane or low-side switch node; carries full load current in low-side configurations.
Pin 2 (Gate)	Control terminal (G)	High-impedance MOSFET gate; requires <60 nC charge for full enhancement; sensitive to ESD and ringing.
Pin 3 (Drain)	Power output terminal (D)	Exposed copper pad on underside - electrically and thermally connected to drain; must be soldered to large copper pour for thermal management.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	7.0 mΩ at 10V gate drive enables <0.8W conduction loss at 90A - reduces heatsink size in compact 1kW power supplies.
Fully avalanche-rated	1320 mJ single-pulse and 290 mJ repetitive avalanche energy allow reliable operation in inductive load switching without external clamping.
100% R_G tested	Guarantees gate resistance between 0.2–3.0 Ω - ensures consistent turn-on timing and driver compatibility across production lots.
175°C max junction temperature	Supports operation in sealed enclosures or high-ambient environments (e.g., automotive engine bays, industrial motor drives).
Lead-free (PbF) construction	Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile - suitable for lead-free SMT assembly lines.

Applications

Motor Drive Phase Leg

DC-DC Converter Primary Switch

Use Scenario: High-current H-bridge driving brushed DC or BLDC motors in industrial automation.

IC Role / Device Role / Timing Role: Low-side or high-side switching element in half-bridge configuration; handles bidirectional current up to 116A.

Use Value: 7.0mΩ R_DS(on) minimizes I²R losses during PWM conduction, enabling >97% efficiency at 48V/50A motor loads.

Use Scenario: Primary-side switch in isolated 48V-to-12V telecom or server DC-DC converters.

IC Role / Device Role / Timing Role: Hard-switched power transistor operating at 200–500 kHz with 60 ns fall time.

Use Value: Low Q_gd/Q_g ratio (33/60 nC) reduces Miller-induced shoot-through risk and improves ZVS transition margin.

Uninterruptible Power Supply (UPS) Inverter

Industrial Battery Management System

Use Scenario: Output stage in 1–3 kVA online UPS inverters delivering clean 230VAC sine wave.

IC Role / Device Role / Timing Role: Sine-wave synthesis switch in full-bridge topology; conducts 116A peak current with body diode freewheeling.

Use Value: 1.2V V_SD body diode forward drop and 56 ns reverse recovery time reduce conduction and switching losses during dead-time commutation.

Use Scenario: Cell-balancing and main contactor switching in 24–48V lithium-ion battery packs for material handling equipment.

IC Role / Device Role / Timing Role: High-reliability power switch controlling pack discharge path and isolation during fault conditions.

Use Value: Fully avalanche-rated design withstands >60A inductive kickback from solenoid disconnects without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404PBF	R_DS(on) = 4.7mΩ @ 10V, V_DSS = 40V, D₂PAK package, higher Q_g (131 nC)	Higher voltage rating suits 36V automotive systems; slower switching limits frequency to ≤200 kHz	Select when 40V blocking and lower on-resistance outweigh gate drive complexity.
STP120N3LLH6	R_DS(on) = 3.2mΩ @ 10V, V_DSS = 30V, TO-220FP package, lower thermal resistance (R_θJC = 0.7°C/W)	Through-hole mounting limits automated assembly; better thermal performance but no surface-mount footprint	Prefer for prototyping or low-volume builds where manual assembly and heatsink access are feasible.

Compared with IRL2203NSTRLPBF, IRF1404PBF offers higher voltage margin and lower R_DS(on) but demands stronger gate drivers due to 131 nC Q_g; STP120N3LLH6 delivers superior thermal performance in TO-220FP but sacrifices SMT compatibility and increases board assembly cost.

Availability

IRL2203NSTRLPBF is available at Aetrix Electronics and suitable for motor control, DC-DC conversion, and uninterruptible power supply applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for IRL2203NSTRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with global R&D and manufacturing infrastructure.

This device belongs to Infineon's legacy HEXFET® power MOSFET product line, engineered for high-current, high-efficiency switching in industrial power conversion and motor drive systems.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRL2203NSTRLPBF supports 82A continuous drain current at T_C = 100°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package under real-world heatsinking conditions, not silicon capability.

Does this MOSFET support logic-level gate drive?

No - the IRL2203NSTRLPBF is not a logic-level MOSFET. Its gate threshold voltage ranges from 1.0V to 3.0V, but it requires ≥10V V_GS to achieve rated R_DS(on) of 7.0mΩ; at 4.5V, R_DS(on) rises to ~10mΩ and is not guaranteed across temperature.

Can the body diode handle continuous reverse recovery current?

Yes - the integrated body diode is rated for 60A continuous source current (I_S) and 400A pulsed (I_SM). Its reverse recovery charge (Q_rr) is 110–170 nC with t_rr = 56–84 ns, making it suitable for synchronous rectification in medium-frequency converters.

Is the D2PAK package compatible with standard reflow profiles?

Yes - the IRL2203NSTRLPBF is qualified for lead-free reflow per JEDEC J-STD-020, with peak temperature up to 260°C for 10 seconds. The exposed drain pad requires adequate stencil design and solder paste volume to ensure void-free thermal interface.

IRL2203NSTRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 116A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7mOhm @ 60A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 4.5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 3290 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 180W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRL2203NSTRLPBF FAQ

1.How can I place an order for IRL2203NSTRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL2203NSTRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL2203NSTRLPBF reliable?

The price and inventory of IRL2203NSTRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL2203NSTRLPBF is usually 5 days.

3.What payment methods are accepted for IRL2203NSTRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL2203NSTRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL2203NSTRLPBF?

IRL2203NSTRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL2203NSTRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL2203NSTRLPBF?

For technical support, including IRL2203NSTRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL2203NSTRLPBF requirements.

6.How does Aetrix verify that IRL2203NSTRLPBF is sourced from the original manufacturer or authorized distributors?

All IRL2203NSTRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL2203NSTRLPBF meets industry standards.

7.What is the process for return or replacement of IRL2203NSTRLPBF?

All IRL2203NSTRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL2203NSTRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL2203NSTRLPBF part is unused and in its original packaging.

Return procedure for IRL2203NSTRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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