My Inquiry
My Account
Infineon Technologies IRL2203NSTRRPBF
- Part No.:
- IRL2203NSTRRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRL2203NSTRRPBF.pdf
- Description:
- MOSFET N-CH 30V 116A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:6,098
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRL2203NSTRRPBF from Infineon Technologies (formerly International Rectifier) is a 30V N-channel enhancement-mode power MOSFET in D2PAK surface-mount package, featuring 7.0 mΩ RDS(on) at VGS = 10 V, 116 A continuous drain current at TC = 25°C, and fully avalanche-rated operation up to 175°C junction temperature. It serves as a high-efficiency synchronous rectifier or primary-side switch in DC-DC converters, motor drives, and battery protection circuits.
For engineers reviewing the IRL2203NSTRRPBF datasheet, IRL2203NSTRRPBF pinout, IRL2203NSTRRPBF application, or IRL2203NSTRRPBF equivalent, key selection criteria include its ultra-low on-resistance, fast switching (tr = 160 ns, tf = 66 ns), 100% RG tested gate, integrated body diode with 56–84 ns reverse recovery time, and D2PAK thermal performance (RθJC = 0.85°C/W).
Technical Context
This MOSFET employs Advanced HEXFET® process technology optimized for low RDS(on)/die-area ratio and robust dynamic dv/dt immunity (rated per datasheet). Its gate threshold voltage (1.0–3.0 V) enables direct logic-level drive from 3.3 V or 5 V controllers without level-shifting.
The device integrates a monolithic p-n body diode rated for 60 A pulsed source current and 1320 mJ single-pulse avalanche energy. Thermal design leverages the D2PAK's low junction-to-case resistance and compatibility with standard PCB copper pour layouts per AN-994.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage before avalanche; defines use in ≤24 V nominal bus systems. |
| RDS(on) | 7.0 mΩ @ VGS = 10 V - Enables <1 W conduction loss at 116 A; critical for high-current DC-DC output stages. |
| ID (TC = 25°C) | 116 A - Continuous drain rating under ideal heatsinking; limited to 75 A by package thermal saturation. |
| Qg | 60 nC - Total gate charge determines driver strength requirement; impacts switching loss at high frequency. |
| tr/tf | 160 ns / 66 ns - Fast edge rates reduce transition losses; supports >100 kHz hard-switched topologies. |
| EAS | 1320 mJ - Single-pulse avalanche energy rating ensures ruggedness during inductive turn-off transients. |
| RθJC | 0.85 °C/W - Junction-to-case thermal resistance enables direct heatsink mounting for high-power density designs. |
Pinout & Package
IRL2203NSTRRPBF is housed in a D2PAK (TO-262) surface-mount power package with exposed drain pad for thermal and electrical connection. The package supports high-current routing and dissipates up to 95 W with proper heatsinking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D) | Main current-carrying terminal (connected to die backside) | Exposed metal tab - must be soldered to large copper area or heatsink; carries full load current and provides primary thermal path. |
| Source (S) | Reference node for gate drive and current return path | Internally bonded to source metallization; forms low-inductance return for switching loop; connects to ground or low-side reference. |
| Gate (G) | Control electrode for channel formation | High-impedance input requiring controlled dV/dt; 100% RG tested to ensure consistent turn-on behavior across production lots. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 7.0 mΩ enables <0.8 W conduction loss at 100 A, reducing thermal burden in high-current 12 V/24 V systems. |
| Fully avalanche rated | 1320 mJ EAS allows safe operation during inductive switching faults without external snubbers in motor or solenoid drivers. |
| Logic-level gate drive | VGS(th) = 1.0–3.0 V supports direct interface with microcontrollers and PWM ICs operating at 3.3 V or 5 V. |
| Fast body diode | 56–84 ns trr and 110–170 nC Qrr minimize reverse recovery loss in synchronous rectification and bidirectional power flow. |
| 175°C max junction temperature | Enables operation in sealed enclosures or high-ambient environments (e.g., automotive under-hood, industrial PLCs) without derating. |
Applications
| Motor Drive Half-Bridge | DC-DC Synchronous Rectifier |
|---|---|
Use Scenario: High-current brushed DC motor control in industrial actuators with 12–24 V supply and peak loads ≥80 A. IC Role / Device Role / Timing Role: Low-side switching element in half-bridge topology; handles continuous 60–100 A with minimal conduction loss. Use Value: 7.0 mΩ RDS(on) reduces I²R heating by >40% vs. comparable 10 mΩ MOSFETs, extending thermal margin and enabling smaller heatsinks. | Use Scenario: Secondary-side synchronous rectification in isolated 48 V → 12 V telecom DC-DC converters operating at 200–500 kHz. IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diode; commutated by controller with precise timing relative to primary switch. Use Value: Body diode trr ≤ 84 ns and Qrr ≤ 170 nC limit reverse recovery loss, improving efficiency by 1.2–1.8% over standard rectifiers. |
| Battery Protection Circuit | Hot-Swap Controller Switch |
Use Scenario: Overcurrent and short-circuit protection in 24 V lithium-ion battery packs for material handling equipment. IC Role / Device Role / Timing Role: Main pass transistor in active protection FET configuration; switched off within microseconds upon fault detection. Use Value: Fully avalanche-rated structure withstands inductive kickback from pack wiring during fast shutdown, eliminating need for external TVS. | Use Scenario: Inrush current limiting and fault isolation in redundant 48 V server power distribution units. IC Role / Device Role / Timing Role: Main hot-swap series switch; controlled via dedicated hot-swap controller with soft-start and current limiting. Use Value: 116 A ID rating and 0.85 °C/W RθJC support sustained 60–80 A operation with <15°C rise above heatsink, ensuring reliability during prolonged overload. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1404PBF | RDS(on) = 4.7 mΩ (lower), VDSS = 40 V (higher), DPAK package (larger footprint) | Higher voltage margin but larger board area; higher gate charge (131 nC) demands stronger driver | Prefer when 40 V blocking is required and PCB space permits larger package. |
| STP110N3LLH6 | RDS(on) = 3.3 mΩ (lower), VDSS = 30 V, TO-220FP package (through-hole) | Lower RDS(on) improves efficiency but lacks D2PAK's thermal performance; no surface-mount option | Choose for cost-sensitive through-hole builds where thermal management uses chassis mounting. |
Compared with IRL2203NSTRRPBF, IRF1404PBF offers higher voltage headroom and lower on-resistance but requires more gate drive energy and occupies greater PCB area; STP110N3LLH6 delivers superior conduction efficiency in through-hole assembly but forfeits the D2PAK's surface-mount scalability and thermal interface flexibility.
Availability
IRL2203NSTRRPBF is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, battery protection circuits, and hot-swap controllers requiring stable component supply and long-term industrial availability.
Supply support for IRL2203NSTRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired International Rectifier in 2015 and continues to manufacture and support the HEXFET® portfolio, a leader in high-performance power MOSFETs since the 1980s.
The IRL2203NSTRRPBF belongs to the logic-level HEXFET® Power MOSFET product line, engineered specifically for high-current, low-voltage switching in space-constrained and thermally demanding applications such as industrial automation and telecom power systems.
FAQ
Is IRL2203NSTRRPBF suitable for 3.3 V microcontroller gate drive?
Yes. With a gate threshold voltage range of 1.0–3.0 V and guaranteed turn-on at VGS = 4.5 V, the device fully enhances using standard 3.3 V GPIO outputs. However, RDS(on) is specified at 10 V, so conduction loss will be ~25% higher at 3.3 V than at 10 V due to reduced channel conductivity.
What is the maximum recommended PCB copper area for D2PAK thermal performance?
Per IR Application Note AN-994, a minimum 1" × 1" (25.4 mm × 25.4 mm) FR-4 copper pour with 2 oz. thickness and thermal vias to inner layers is recommended. This layout achieves the published RθJA = 40°C/W and supports >70 W dissipation with forced air cooling.
Does IRL2203NSTRRPBF have a built-in ESD protection diode?
No. The device does not integrate gate-oxide ESD protection. External Zener clamping (e.g., 12 V TVS between gate and source) is strongly advised in systems exposed to handling or system-level ESD events, especially given its 16 V absolute maximum VGS.
Can this MOSFET replace IRL2203NLPbF in a design?
Yes - IRL2203NSTRRPBF and IRL2203NLPbF share identical silicon die, electrical specs, and thermal characteristics. The only difference is packaging: STRRPBF denotes tape-and-reel D2PAK; LPbF denotes lead-free through-hole TO-262. Footprint and reflow profiles differ, but electrical performance is interchangeable.
IRL2203NSTRRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 116A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 7mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 60 nC @ 4.5 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3290 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.8W (Ta), 180W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRL2203NSTRRPBF FAQ
1.How can I place an order for IRL2203NSTRRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRL2203NSTRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRL2203NSTRRPBF reliable?
The price and inventory of IRL2203NSTRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL2203NSTRRPBF is usually 5 days.
3.What payment methods are accepted for IRL2203NSTRRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL2203NSTRRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRL2203NSTRRPBF?
IRL2203NSTRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRL2203NSTRRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRL2203NSTRRPBF?
For technical support, including IRL2203NSTRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL2203NSTRRPBF requirements.
6.How does Aetrix verify that IRL2203NSTRRPBF is sourced from the original manufacturer or authorized distributors?
All IRL2203NSTRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL2203NSTRRPBF meets industry standards.
7.What is the process for return or replacement of IRL2203NSTRRPBF?
All IRL2203NSTRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL2203NSTRRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRL2203NSTRRPBF part is unused and in its original packaging.
Return procedure for IRL2203NSTRRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRL2203NSTRRPBF Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
