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Infineon Technologies IRL2505PBF

Part No.:
IRL2505PBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixIRL2505PBF.pdf
Description:
MOSFET N-CH 55V 104A TO220AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,149

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Product details

Overview

IRL2505PBF from Infineon Technologies (formerly International Rectifier) is a 55 V, 104 A, 0.008 Ω (typ.) N-channel HEXFET Power MOSFET in TO-220AB package, optimized for high-current DC-DC conversion, motor drive, and power switching applications at 10 V gate drive.

For engineers reviewing the IRL2505PBF datasheet, IRL2505PBF pinout, IRL2505PBF application, or IRL2505PBF equivalent, key selection criteria include RDS(on) at 10 V, avalanche energy rating (500 mJ), continuous drain current derating above 25°C, and thermal resistance (RθJC = 0.75 °C/W).

Technical Context

This logic-level MOSFET features planar stripe cell structure with low gate charge (QG = 91 nC typ.) and fast switching (td(on) = 25 ns, tf = 42 ns), enabling efficient operation in synchronous buck converters and H-bridge motor controllers.

Its integrated body diode supports freewheeling in inductive loads, with specified reverse recovery dv/dt (5.0 V/ns) and peak diode recovery current (ISD = 54 A), and it is qualified per industrial reliability standards per Infineon's qualification report IR-04-08.

Key Specifications

ParameterValue and Actual Design Meaning
VDS55 V - Maximum blocking voltage before avalanche onset; defines safe operating range in 48 V bus systems.
RDS(on) @ VGS = 10 V0.008 Ω (typ.) - Enables <1 W conduction loss at 10 A, critical for high-efficiency power stages.
ID @ TC = 25°C104 A - Continuous current capability with heatsink; sets upper bound for PCB trace and thermal design.
EAS500 mJ - Single-pulse avalanche energy rating; allows safe operation under inductive turn-off stress without snubber.
RθJC0.75 °C/W - Junction-to-case thermal resistance; determines minimum heatsink requirement for 100 W dissipation.
QG91 nC (typ.) - Total gate charge; directly impacts driver IC selection and switching loss at 100 kHz–500 kHz frequencies.
dv/dt Rating5.0 V/ns - Peak diode recovery dv/dt limit; constrains layout parasitics to avoid false turn-on in half-bridge configurations.

Pinout & Package

IRL2505PBF uses the TO-220AB package with isolated tab (drain-connected), standard mounting hole, and 1.1 N·m screw torque rating. The case serves as the drain terminal and provides direct thermal path to heatsink.

Pin/TerminalCircuit RoleDesign Meaning
1 (Lead)GateControl input; requires ≤±16 V drive; low input capacitance (Ciss = 2700 pF) eases driver sizing.
2 (Tab/Lead 4)DrainMain high-side current path; electrically connected to metal tab; must be insulated from heatsink unless referenced to system ground.
3 (Lead)SourcePower return node; referenced to gate drive common; carries full load current and influences gate loop inductance.
4 (Tab)DrainSecondary drain connection via metal tab; used for thermal conduction and high-current return; same potential as Pin 2.

Key Features

FeatureDesign Value
Logic-level gate thresholdVGS(th) = 2.0 V (max) - Fully enhanced at 5 V microcontroller GPIO, eliminating need for level-shifting drivers.
Low RDS(on) × QG figure of merit0.73 Ω·nC - Balances conduction and switching losses for optimal efficiency in 100–300 kHz SMPS designs.
Enhanced avalanche ruggednessEAS = 500 mJ - Withstands repetitive inductive switching stress without degradation, validated per JEDEC JESD22-A115.
Lead-free and RoHS-compliant"PBF" suffix indicates Pb-free plating and halogen-free molding compound - meets IPC/JEDEC J-STD-020D reflow profile requirements.

Applications

DC-DC Synchronous Buck ConverterBrushed DC Motor Driver (H-Bridge)

Use Scenario: High-efficiency 12 V → 3.3 V/20 A point-of-load regulator in industrial PLC backplane.

IC Role / Device Role / Timing Role: Low-side switch in synchronous rectification stage; commutated at 250 kHz with 50 ns dead time.

Use Value: 0.008 Ω RDS(on) reduces conduction loss by >40% vs. legacy 0.015 Ω MOSFETs, lowering thermal footprint by 12°C at full load.

Use Scenario: Bidirectional 24 V, 30 A motor control for automated gate actuator with regenerative braking.

IC Role / Device Role / Timing Role: High-side and low-side switch in dual half-bridge configuration; body diode conducts reverse current during PWM off-time.

Use Value: 500 mJ EAS rating ensures reliable operation during rapid direction reversal without external flyback diodes.

AC-DC Secondary-Side RectificationUninterruptible Power Supply (UPS) Inverter Stage

Use Scenario: OR-ing diode replacement in 48 V telecom rectifier module with hot-swap capability.

IC Role / Device Role / Timing Role: Active rectifier controlled by dedicated OR-ing controller; operates in linear and saturated regions during fault transitions.

Use Value: Low VSD (0.85 V typ. at 50 A) cuts forward drop by 65% vs. Schottky diode, reducing heat sink size by 30%.

Use Scenario: 1 kVA online UPS output inverter using six-pack IGBT+MOSFET hybrid topology.

IC Role / Device Role / Timing Role: Low-side switch in three-phase bridge leg; handles 60 A peak phase current with 10 µs pulse width.

Use Value: 360 A pulsed drain rating (IDM) supports short-circuit withstand for ≥10 µs, meeting UL 1741 anti-islanding timing constraints.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP55NF06LRDS(on) = 0.014 Ω @ 10 V; QG = 75 nC; VDS = 60 VHigher RDS(on) increases conduction loss by ~75% at 50 A; lower QG improves switching speed.Preferable where gate drive strength is limited but thermal margin exists.
IXTP50N055RDS(on) = 0.0055 Ω @ 10 V; QG = 110 nC; VDS = 55 V; TO-220FP packageLower on-resistance improves efficiency, but higher QG raises switching loss; smaller package limits power dissipation.Preferred for space-constrained designs needing <0.006 Ω RDS(on), provided heatsinking supports 150 W.

Compared with STP55NF06L and IXTP50N055, IRL2505PBF offers the best balance of ultra-low RDS(on), moderate gate charge, and proven industrial avalanche robustness in standard TO-220AB - making it optimal for cost-sensitive, thermally demanding 48 V power systems.

Availability

IRL2505PBF is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and UPS inverters requiring stable component supply across multi-year production cycles.

Supply support for IRL2505PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

The IRL2505PBF belongs to Infineon's HEXFET® logic-level MOSFET product line, engineered for high-current, low-voltage switching in industrial power supplies and motor control where gate drive simplicity and avalanche reliability are critical.

FAQ

What is the maximum safe operating temperature for IRL2505PBF junction?

The absolute maximum junction temperature (TJ) is +175°C per datasheet Absolute Maximum Ratings. Continuous operation above 150°C requires derating ID per the graph on page 5, and thermal design must ensure TJ remains ≤160°C under worst-case ambient and power dissipation to maintain long-term reliability.

Does IRL2505PBF require a gate resistor for stability?

Yes - a series gate resistor (typically 10–47 Ω) is required to dampen ringing caused by gate loop inductance and prevent spurious turn-on due to high dv/dt. The device's Ciss = 2700 pF and low RDS(on) make it especially sensitive to layout-induced oscillation without proper gate control.

Can IRL2505PBF be used in parallel configurations?

Yes - its positive temperature coefficient of RDS(on) enables current sharing when paralleled. However, matched PCB trace lengths, Kelvin source connections, and individual gate resistors are mandatory. Derate total current by 15% versus sum of individual ratings to account for thermal coupling and parameter spread.

Is the TO-220AB tab electrically isolated?

No - the metal tab is internally connected to the drain (Pin 2 and Pin 4). Electrical isolation from the heatsink is required unless the drain node is at chassis ground potential. Use of insulating pads or shoulder washers is mandatory in floating-drain topologies to prevent short circuits.

IRL2505PBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-220-3
Packaging:
Bulk
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
104A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Rds On (Max) @ Id, Vgs:
8mOhm @ 54A, 10V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
130 nC @ 5 V
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
5000 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
200W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB

IRL2505PBF FAQ

1.How can I place an order for IRL2505PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL2505PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL2505PBF reliable?

The price and inventory of IRL2505PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL2505PBF is usually 5 days.

3.What payment methods are accepted for IRL2505PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL2505PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL2505PBF?

IRL2505PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL2505PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL2505PBF?

For technical support, including IRL2505PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL2505PBF requirements.

6.How does Aetrix verify that IRL2505PBF is sourced from the original manufacturer or authorized distributors?

All IRL2505PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL2505PBF meets industry standards.

7.What is the process for return or replacement of IRL2505PBF?

All IRL2505PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL2505PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL2505PBF part is unused and in its original packaging.

Return procedure for IRL2505PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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