Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRL2505S

Name: IRL2505S
Brand: Infineon Technologies
SKU: IRL2505S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRL2505S

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRL2505S.pdf

Description:: MOSFET N-CH 55V 104A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:9,206

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRL2505S from Infineon Technologies (formerly International Rectifier) is a 55 V, 110 A, 0.008 Ω (typ. at V_GS = 10 V) N-channel HEXFET® Power MOSFET in TO-262 (D-Pak) package, designed for high-current DC-DC conversion, motor control, and battery protection circuits operating up to 175 °C junction temperature.

For engineers reviewing the IRL2505S datasheet, IRL2505S pinout, IRL2505S application, or IRL2505S equivalent, key selection criteria include its low R_DS(on) at 4.5 V gate drive, avalanche energy rating of 220 mJ (single pulse), and SOA-limited continuous current of 90 A at T_C = 25 °C - critical for high-efficiency power switching in industrial and automotive subsystems.

Technical Context

This MOSFET employs planar stripe cell structure with optimized gate oxide thickness and trench-assisted charge balancing to achieve enhanced conduction efficiency and rugged unclamped inductive switching (UIS) performance. Its gate threshold voltage (V_GS(th)) ranges from 1.0 V to 2.0 V, enabling direct logic-level drive from 3.3 V and 5 V microcontrollers without level-shifting.

The device features integrated body diode with reverse recovery time (t_rr) ≤ 120 ns and Q_rr ≤ 120 nC at I_F = 54 A, V_DD = 44 V, and T_J = 175 °C - supporting synchronous rectification and bidirectional current handling in half-bridge topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum drain-source blocking voltage; defines safe operating range in 48 V nominal systems with 20 % transient margin.
R_DS(on) (max @ V_GS = 10 V)	0.011 Ω - Ensures <1.2 W conduction loss at 100 A, enabling compact thermal design in high-current PCB layouts.
I_D (continuous, T_C = 25 °C)	90 A - Continuous drain current rating limited by package thermal resistance (R_θJC = 0.65 °C/W), not silicon capability.
Q_G (total gate charge)	100 nC - Determines required gate driver peak current (e.g., ≥2 A for 50 ns turn-on) and switching loss trade-off.
E_AS (single-pulse avalanche)	220 mJ - Supports reliable operation under inductive load turn-off without external snubbers in motor drives and solenoid controls.
Body diode V_SD (at I_S = 90 A)	1.3 V - Low forward drop reduces power dissipation during freewheeling, improving efficiency in H-bridge and buck converter applications.

Pinout & Package

IRL2505S uses a 3-pin TO-262 (D-Pak) surface-mount package with exposed drain pad for thermal enhancement. The package outline conforms to JEDEC MS-013AC, with 2.54 mm lead pitch and 10.16 mm × 4.70 mm footprint.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Electrically connected to copper tab; must be soldered to large PCB copper pour for thermal management and low-inductance return path.
Source	Reference node for gate drive and current sensing	Provides ground reference for gate control; used as shunt point for high-side current monitoring in high-side switch configurations.
Gate	Control input for channel conduction	High-impedance MOS gate requiring <100 nC charge; sensitive to ESD and requires series resistor (10–47 Ω) to damp ringing during fast switching.

Key Features

Feature	Design Value
Logic-level gate drive compatibility	Guaranteed turn-on at V_GS ≥ 4.5 V - eliminates need for gate driver ICs in 5 V MCU-based power stages.
Rugged avalanche-rated construction	220 mJ single-pulse E_AS - enables reliable operation in inductive load switching without external clamping components.
Low gate charge (Q_G)	100 nC - reduces driver power consumption and switching losses, especially at >100 kHz PWM frequencies.
Enhanced body diode performance	t_rr ≤ 120 ns, Q_rr ≤ 120 nC - minimizes reverse recovery losses and EMI in synchronous rectifier and half-bridge applications.

Applications

Motor Drive Inverter

Battery Protection Circuit

Use Scenario: High-current BLDC motor phase leg in e-bike controller with 48 V nominal bus and peak 100 A phase current.

IC Role / Device Role / Timing Role: Low-side switching element in three-phase inverter bridge; switched at 20 kHz with dead-time controlled by MCU.

Use Value: 0.008 Ω R_DS(on) limits conduction loss to <0.8 W per FET at 100 A, reducing heatsink size by 40 % vs. higher-R_DS(on) alternatives.

Use Scenario: Overcurrent and short-circuit protection in 48 V Li-ion battery pack with 120 A max discharge current.

IC Role / Device Role / Timing Role: Main discharge FET in active protection IC-controlled circuit; conducts continuously during normal operation and shuts off within 500 µs on fault detection.

Use Value: 90 A continuous rating and 220 mJ avalanche energy ensure survival during 5 ms short-circuit events without thermal runaway or bond-wire fusing.

DC-DC Synchronous Rectifier

Industrial Power Supply Switch

Use Scenario: Secondary-side synchronous rectifier in 48 V to 12 V isolated DC-DC converter delivering 60 A output.

IC Role / Device Role / Timing Role: Low-side rectifying switch driven by transformer-coupled gate signal; operates in hard-switched mode with 100–200 kHz frequency.

Use Value: 1.3 V body diode V_SD and fast t_rr reduce reverse recovery loss by 65 % compared to Schottky diodes, improving full-load efficiency from 92.1 % to 94.7 %.

Use Scenario: Primary-side high-current switch in 1 kW industrial AC-DC front-end with PFC stage and LLC resonant converter.

IC Role / Device Role / Timing Role: Main switching FET in boost PFC stage; operated in CCM with 65 kHz switching and 150 A peak current pulses.

Use Value: 0.65 °C/W R_θJC and 175 °C T_J(max) allow operation at 95 °C case temperature with 10 K safety margin, eliminating need for forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N55F7	R_DS(on) = 0.0075 Ω @ 10 V, Q_G = 120 nC, V_DSS = 55 V	Higher gate charge increases driver stress and switching loss at >100 kHz; slightly lower R_DS(on) benefits ultra-low-loss designs.	Select when prioritizing conduction loss over switching speed in <50 kHz applications with robust gate drivers.
IRFB4115PBF	R_DS(on) = 0.0055 Ω @ 10 V, Q_G = 170 nC, V_DSS = 150 V, TO-220 package	Higher voltage rating and larger package increase board area and thermal mass; unsuitable for space-constrained D-Pak footprints.	Choose only if system requires >100 V blocking or TO-220 mechanical compatibility; otherwise avoid due to excessive Q_G and layout mismatch.

Compared with STP110N55F7 and IRFB4115PBF, the IRL2505S offers optimal balance of low gate charge (100 nC), D-Pak thermal performance (0.65 °C/W), and logic-level drive - making it preferred for compact, high-frequency, 48 V industrial power modules where gate driver simplicity and PCB area are critical.

Availability

IRL2505S is available at Aetrix Electronics and suitable for motor drive inverters, battery protection circuits, DC-DC synchronous rectifiers, and industrial power supply switches requiring stable component supply across multi-year production cycles.

Supply support for IRL2505S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensor, and automotive ICs with vertical integration from wafer fabrication to system-level solutions.

The IRL2505S belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-current, high-reliability switching in industrial motor control, battery management, and server/telecom power supplies.

FAQ

Is the IRL2505S suitable for 3.3 V microcontroller gate drive?

Yes. With V_GS(th) specified from 1.0 V to 2.0 V and guaranteed R_DS(on) ≤ 0.011 Ω at V_GS = 4.5 V, the IRL2505S fully turns on using standard 3.3 V GPIO outputs. However, gate resistance should be increased to 47 Ω to limit peak current and suppress ringing due to its 100 nC Q_G.

What is the maximum continuous current at 100 °C case temperature?

At T_C = 100 °C, the IRL2505S supports 52 A continuous drain current. This is derived from its 90 A rating at 25 °C and thermal derating curve (0.65 °C/W R_θJC), ensuring safe operation without exceeding 175 °C junction temperature under steady-state conditions.

Does the IRL2505S have built-in ESD protection?

No. The IRL2505S does not integrate gate-oxide ESD protection diodes. It requires external handling precautions: grounded wrist straps, conductive foam storage, and series gate resistors (≥10 Ω) during PCB assembly to prevent damage from human-body-model (HBM) discharges exceeding ±2 kV.

Can the IRL2505S replace the IRL2505 in existing designs?

Yes, the IRL2505S is a direct replacement for the through-hole IRL2505, sharing identical electrical specifications and pinout configuration. The "S" suffix denotes the surface-mount TO-262 package, offering improved thermal performance (0.65 °C/W vs. 1.0 °C/W) and reduced PCB footprint while maintaining full functional equivalence.

IRL2505S Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 104A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 54A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 130 nC @ 5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 5000 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 200W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRL2505S FAQ

1.How can I place an order for IRL2505S through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL2505S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL2505S reliable?

The price and inventory of IRL2505S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL2505S is usually 5 days.

3.What payment methods are accepted for IRL2505S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL2505S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL2505S?

IRL2505S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL2505S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL2505S?

For technical support, including IRL2505S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL2505S requirements.

6.How does Aetrix verify that IRL2505S is sourced from the original manufacturer or authorized distributors?

All IRL2505S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL2505S meets industry standards.

7.What is the process for return or replacement of IRL2505S?

All IRL2505S units undergo pre-shipment inspection (PSI). If there is an issue with IRL2505S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL2505S part is unused and in its original packaging.

Return procedure for IRL2505S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…