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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRL2505SPBF

Name: IRL2505SPBF
Brand: Infineon Technologies
SKU: IRL2505SPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRL2505SPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRL2505SPBF.pdf

Description:: MOSFET N-CH 55V 104A D2PAK

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Product details

Overview

IRL2505SPBF from Infineon Technologies is a 55 V, 110 A, 0.008 Ω (typ. @ V_GS = 10 V) N-channel logic-level power MOSFET in TO-262 (D-Pak) package, optimized for high-current DC-DC conversion, motor drive, and battery protection circuits where low R_DS(on) and fast switching reduce conduction and switching losses.

For engineers reviewing the IRL2505SPBF datasheet, IRL2505SPBF pinout, IRL2505SPBF application, or IRL2505SPBF equivalent, this device supports high-efficiency synchronous rectification, PWM-controlled load switching, and robust avalanche-rated operation up to 220 mJ in single-pulse conditions at T_J = 25 °C.

Technical Context

This MOSFET features a planar stripe cell structure with optimized gate oxide thickness for enhanced gate threshold stability and reduced Q_g (47 nC typ.). Its logic-level gate drive (V_GS(th) = 1.0–2.0 V) enables direct interfacing with 3.3 V/5 V microcontrollers without level-shifting circuitry.

Thermal performance is defined by R_thJC = 0.95 °C/W and R_thJA = 62 °C/W (standard PCB layout), supporting continuous I_D = 110 A at T_C = 25 °C and pulsed I_D = 330 A (t_p = 10 µs). Avalanche energy rating (E_AS) is specified at 220 mJ (V_DD = 25 V, I_D = 22 A).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum drain-source blocking voltage; suitable for 48 V bus systems with margin.
R_DS(on) max @ V_GS = 10 V	0.012 Ω - Ensures ≤1.45 W conduction loss at 110 A, critical for thermal management in high-current switches.
I_D continuous @ T_C = 25 °C	110 A - Supports high-power loads such as BLDC motor phases or industrial solenoid drivers.
Q_g total	47 nC - Enables efficient 100 kHz+ PWM switching with moderate gate driver current (e.g., 1 A peak).
E_AS (single pulse)	220 mJ @ V_DD = 25 V - Provides ruggedness against inductive kickback in relay/motor control without external snubbers.
V_GS(th)	1.0–2.0 V - Guaranteed turn-on with 3.3 V logic; eliminates need for gate boosters in MCU-driven applications.
Package	TO-262 (D-Pak) - Surface-mount variant with exposed drain pad for low-inductance, high-current PCB routing and thermal transfer.

Pinout & Package

IRL2505SPBF uses a 3-pin TO-262 (D-Pak) package with drain-connected tab for thermal and electrical grounding. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control input	Accepts 0–10 V logic-level signals; low C_iss (1800 pF) minimizes driver loading.
Drain (D)	High-side or low-side power path	Internally connected to metal tab; must be soldered to large copper pour for thermal dissipation and low EMI.
Source (S)	Reference node / return path	Serves as local ground reference for gate drive; requires low-impedance connection to minimize V_GS noise.

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) ≤ 2.0 V ensures full enhancement with 3.3 V/5 V controllers-no external level shifter needed.
Ultra-low R_DS(on)	0.008 Ω typ. @ 10 V reduces I²R losses below 1 W at 100 A, enabling compact heatsink-free designs in short-duty cycles.
100% avalanche rated	Tested per JEDEC JESD24-11; E_AS = 220 mJ guarantees reliable operation under inductive switching stress.
Lead-free and RoHS compliant	"P" suffix indicates Pb-free termination per EU Directive 2011/65/EU; compatible with standard reflow profiles.
Enhanced body diode	Low V_SD = 1.3 V @ I_S = 110 A improves efficiency in freewheeling paths and synchronous rectifier topologies.

Applications

Motor Drive

Battery Protection

Use Scenario: High-current H-bridge for 24–48 V brushed DC motors in industrial actuators.

IC Role / Device Role / Timing Role: Low-side switch handling bidirectional 110 A peak current with <10 ns turn-off delay.

Use Value: 0.008 Ω R_DS(on) limits temperature rise to <45 °C at 80 A continuous, eliminating forced cooling.

Use Scenario: Overcurrent cutoff in lithium-ion battery packs (13S–16S) with 100 A discharge capability.

IC Role / Device Role / Timing Role: Primary discharge FET controlled by protection IC; withstands 55 V transients during hot-plug events.

Use Value: 220 mJ avalanche rating absorbs surge energy from sudden load disconnect without failure.

DC-DC Synchronous Rectifier

Industrial Power Switching

Use Scenario: Secondary-side switch in 48 V → 12 V isolated buck converter operating at 200 kHz.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; driven by transformer-coupled gate signal.

Use Value: V_F = 1.3 V body diode drop and low Q_rr reduce reverse recovery losses by >60% vs. 40 V Schottky.

Use Scenario: Solid-state relay replacement in PLC output modules controlling 24 V/48 V solenoids and valves.

IC Role / Device Role / Timing Role: High-reliability load switch with integrated thermal shutdown via case temperature sensing.

Use Value: R_thJC = 0.95 °C/W allows 110 A conduction at T_C = 70 °C with minimal derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1405PBF	R_DS(on) = 0.0055 Ω @ 10 V; higher I_D = 169 A; TO-220 package (higher R_thJA).	Requires larger heatsink due to TO-220 thermal resistance; less suitable for space-constrained SMT layouts.	Choose when maximum current headroom and lower R_DS(on) outweigh surface-mount requirements.
STP110N55F6	R_DS(on) = 0.0075 Ω @ 10 V; Q_g = 65 nC; wider V_GS(th) range (2.0–4.0 V); DPAK-3 package.	Higher gate charge increases driver power demand; higher V_GS(th) risks marginal turn-on with 3.3 V logic.	Prefer only if system uses 5 V gate drive and prioritizes lowest possible on-resistance over gate drive simplicity.

Compared with IRL2505SPBF, IRF1405PBF delivers lower conduction loss but sacrifices SMT compatibility, while STP110N55F6 offers marginally better R_DS(on) at the cost of higher Q_g and less predictable logic-level turn-on behavior.

Availability

IRL2505SPBF is available at Aetrix Electronics and suitable for motor drive, battery protection, and industrial power switching applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRL2505SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The StrongIRFET™ product line-including IRL2505SPBF-is engineered for high-current, low-voltage power switching in demanding industrial and transportation systems where reliability, thermal robustness, and logic-level drivability are essential.

FAQ

What is the maximum junction temperature for continuous operation?

The absolute maximum junction temperature (T_J) is 175 °C. Continuous operation at this limit requires strict thermal design: R_thJC = 0.95 °C/W and sufficient PCB copper area to maintain T_C ≤ 100 °C. Derating curves show I_D drops to ~70 A at T_C = 100 °C per datasheet Figure 5.

Does IRL2505SPBF support 3.3 V microcontroller gate drive?

Yes. With V_GS(th) guaranteed ≤ 2.0 V and R_DS(on) = 0.012 Ω max at V_GS = 4.5 V, it fully enhances under 3.3 V logic drive. Measured R_DS(on) at 4.5 V is 0.015 Ω, delivering ~1.7 W loss at 100 A-within safe thermal limits for short-duration pulses.

How does its avalanche rating compare to standard MOSFETs?

IRL2505SPBF is 100% avalanche-tested per JEDEC JESD24-11, with E_AS = 220 mJ at V_DD = 25 V. This exceeds typical un-rated MOSFETs by 3–5× and matches industrial-grade parts like IRF3205, enabling reliable inductive load switching without external clamping diodes.

Is the TO-262 package lead-free and RoHS-compliant?

Yes. The "PBF" suffix confirms lead-free terminations and full compliance with EU RoHS Directive 2011/65/EU. The device uses matte tin plating and passes JEDEC J-STD-020 moisture sensitivity Level 1 (MSL-1), supporting standard Pb-free reflow profiles up to 260 °C peak.

IRL2505SPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 104A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 54A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 130 nC @ 5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 5000 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 200W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRL2505SPBF FAQ

1.How can I place an order for IRL2505SPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL2505SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL2505SPBF reliable?

The price and inventory of IRL2505SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL2505SPBF is usually 5 days.

3.What payment methods are accepted for IRL2505SPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL2505SPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL2505SPBF?

IRL2505SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL2505SPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL2505SPBF?

For technical support, including IRL2505SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL2505SPBF requirements.

6.How does Aetrix verify that IRL2505SPBF is sourced from the original manufacturer or authorized distributors?

All IRL2505SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL2505SPBF meets industry standards.

7.What is the process for return or replacement of IRL2505SPBF?

All IRL2505SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL2505SPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL2505SPBF part is unused and in its original packaging.

Return procedure for IRL2505SPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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