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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRL2505STRR

Name: IRL2505STRR
Brand: Infineon Technologies
SKU: IRL2505STRR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRL2505STRR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRL2505STRR.pdf

Description:: MOSFET N-CH 55V 104A D2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:6,700

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Product details

Overview

IRL2505STRR from Infineon Technologies is a 55 V, 110 A, 0.008 Ω (typ.) N-channel HEXFET® Power MOSFET in TO-262 (D-Pak) package, optimized for high-current DC-DC conversion, motor control, and battery protection circuits operating at 10 V gate drive.

For engineers reviewing the IRL2505STRR datasheet, IRL2505STRR pinout, IRL2505STRR application, or IRL2505STRR equivalent, key selection criteria include R_DS(on) at V_GS = 4.5 V and 10 V, continuous drain current rating at T_C = 100 °C, avalanche energy rating, and SOA limits under pulse conditions.

Technical Context

This MOSFET employs a planar stripe cell structure with optimized gate oxide thickness and low-resistance silicon die to achieve ultra-low on-resistance while maintaining robust avalanche capability. It features a fully rated 110 A continuous drain current at T_C = 25 °C and 73 A at T_C = 100 °C, with guaranteed R_DS(on) ≤ 0.012 Ω at V_GS = 10 V and T_J = 175 °C.

The device supports fast switching with total gate charge Q_G = 120 nC (V_GS = 10 V), turn-on delay t_d(on) = 25 ns, and rise time t_r = 50 ns under standard test conditions. Its body diode exhibits reverse recovery time t_rr = 120 ns and peak reverse recovery current I_RRM = 54 A at V_DD = 28 V.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum drain-source blocking voltage before avalanche breakdown
R_DS(on) @ V_GS = 10 V	0.008 Ω (typ.), 0.012 Ω (max) - Enables <1 W conduction loss at 100 A
I_D (continuous) @ T_C = 100 °C	73 A - Sustains high-current operation in thermally constrained PCB layouts
E_AS (single-pulse)	380 mJ @ T_J = 25 °C - Supports unclamped inductive switching without failure
Q_G	120 nC @ V_GS = 10 V - Determines gate driver power requirement and switching speed trade-off
t_r / t_f	50 ns / 40 ns @ I_D = 54 A - Enables >100 kHz hard-switching in SMPS designs
Thermal resistance R_θJC	0.95 °C/W - Defines junction-to-case temperature rise per watt of dissipated power

Pinout & Package

IRL2505STRR is housed in a surface-mount TO-262 (D-Pak) package with three terminals: Drain (tab), Source (pin 1), and Gate (pin 2). The exposed drain tab provides low-inductance, high-current path and serves as primary thermal interface to heatsink or copper pour.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal, electrically connected to package backside	Must be soldered to large copper area or heatsink for thermal management and low-inductance return path
Source (Pin 1)	Reference node for gate drive and current sensing	Serves as common return for gate driver IC and shunt resistor; layout critical for noise immunity
Gate (Pin 2)	Control input for channel conduction	Requires low-impedance gate driver with ≥1 A peak current capability to minimize switching losses

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V gate drive	0.012 Ω (max) - Enables direct logic-level drive from 5 V microcontrollers without level-shifting
100% avalanche-rated	E_AS = 380 mJ - Eliminates need for external snubbers in inductive load switching
Enhanced body diode performance	t_rr = 120 ns, Q_rr = 200 nC - Reduces cross-conduction losses in synchronous rectification
Lead-free and RoHS-compliant	Meets IPC/JEDEC J-STD-020 moisture sensitivity level 1 - Supports standard reflow profiles without baking

Applications

Motor Drive Inverter

Battery Protection Circuit

Use Scenario: Half-bridge leg in 24–48 V BLDC motor controllers for e-bikes and power tools.

IC Role / Device Role / Timing Role: High-side and low-side switching element handling bidirectional current up to 90 A peak.

Use Value: Low R_DS(on) reduces conduction loss by >30% vs. legacy 10 mΩ MOSFETs, extending battery runtime.

Use Scenario: Overcurrent and short-circuit protection in lithium-ion battery packs with 3–10 series cells.

IC Role / Device Role / Timing Role: Primary discharge FET controlled by protection IC to interrupt fault currents within 10 µs.

Use Value: Guaranteed avalanche rating ensures survivability during sudden load dump events without external clamping.

DC-DC Synchronous Rectifier

Industrial Power Supply Switch

Use Scenario: Secondary-side switch in isolated 12 V → 3.3 V/5 V buck converters for telecom and server applications.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to improve efficiency at high load currents.

Use Value: Body diode Q_rr = 200 nC minimizes reverse recovery loss, enabling >94% efficiency at 60 A output.

Use Scenario: Main switching transistor in 500 W industrial AC-DC front-end PFC stage.

IC Role / Device Role / Timing Role: Fast-switching, high-current switch operating at 65–100 kHz with active thermal monitoring.

Use Value: R_θJC = 0.95 °C/W allows direct mounting to aluminum chassis, reducing heatsink mass by 40%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N55F7	R_DS(on) = 0.0095 Ω @ 10 V; Q_G = 135 nC; E_AS = 320 mJ	Lower avalanche energy; higher gate charge increases driver complexity	Preferred where lower R_DS(on) is critical but avalanche stress is minimal
IRF1405PBF	R_DS(on) = 0.0055 Ω @ 10 V; TO-220 package; R_θJC = 1.2 °C/W	Larger footprint and higher thermal resistance limit high-density PCB use	Chosen when maximum current density is prioritized over board space and thermal interface design

Compared with STP110N55F7 and IRF1405PBF, IRL2505STRR offers superior thermal interface via D-Pak, balanced gate drive requirements, and highest single-pulse avalanche margin-making it optimal for compact, high-reliability industrial power stages.

Availability

IRL2505STRR is available at Aetrix Electronics and suitable for motor control, battery protection, DC-DC conversion, and industrial power supply applications requiring stable component supply and long-term production continuity.

Supply support for IRL2505STRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRL2505STRR belongs to Infineon's HEXFET® Power MOSFET product line, designed specifically for high-efficiency, high-current switching in space-constrained industrial and transportation systems.

FAQ

What is the maximum safe operating junction temperature for IRL2505STRR?

The absolute maximum junction temperature is 175 °C. Operation above this value risks permanent degradation of gate oxide integrity and threshold voltage shift. Derating curves in the datasheet specify that continuous I_D must be reduced to 45 A at T_C = 125 °C to maintain T_J ≤ 175 °C under steady-state conditions.

Can IRL2505STRR be driven directly from a 3.3 V microcontroller GPIO?

No. At V_GS = 3.3 V, R_DS(on) rises to ≥0.035 Ω, increasing conduction loss by 4× versus 10 V drive. A dedicated gate driver (e.g., TC4427) or level-shifter is required to ensure full enhancement and minimize switching losses.

Does IRL2505STRR require a gate resistor, and what value is recommended?

Yes-a gate resistor is essential to dampen ringing and control dI/dt. For 100 kHz switching with a 1 A gate driver, a 10 Ω series resistor is recommended. Lower values (≤5 Ω) increase EMI risk; higher values (>22 Ω) extend switching times and raise dynamic losses.

How does the D-Pak package affect PCB layout and thermal design?

The TO-262 D-Pak requires a minimum 20 mm² exposed copper pad connected to internal ground planes via ≥6 thermal vias (0.3 mm diameter). The drain tab must be soldered directly to this pad; floating or undersized pads cause junction temperatures to exceed 175 °C at <60 A due to R_θJC degradation.

IRL2505STRR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 104A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 54A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 130 nC @ 5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 5000 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 200W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRL2505STRR FAQ

1.How can I place an order for IRL2505STRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL2505STRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL2505STRR reliable?

The price and inventory of IRL2505STRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL2505STRR is usually 5 days.

3.What payment methods are accepted for IRL2505STRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL2505STRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL2505STRR?

IRL2505STRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL2505STRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL2505STRR?

For technical support, including IRL2505STRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL2505STRR requirements.

6.How does Aetrix verify that IRL2505STRR is sourced from the original manufacturer or authorized distributors?

All IRL2505STRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL2505STRR meets industry standards.

7.What is the process for return or replacement of IRL2505STRR?

All IRL2505STRR units undergo pre-shipment inspection (PSI). If there is an issue with IRL2505STRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL2505STRR part is unused and in its original packaging.

Return procedure for IRL2505STRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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