Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IRL2505STRRPBF

Part No.:
IRL2505STRRPBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIRL2505STRRPBF.pdf
Description:
MOSFET N-CH 55V 104A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,810

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRL2505STRRPBF from Infineon Technologies (formerly International Rectifier) is a 55 V, 30 A, 0.008 Ω RDS(on) N-channel enhancement-mode MOSFET in TO-262 (D-Pak) package, optimized for high-current DC-DC conversion, motor control, and power switching where low gate charge (QG = 71 nC) and fast switching enable efficient operation at 10 V gate drive.

For engineers reviewing the IRL2505STRRPBF datasheet, IRL2505STRRPBF pinout, IRL2505STRRPBF application, or IRL2505STRRPBF equivalent, this part supports high-duty-cycle, thermally constrained designs requiring robust avalanche energy rating (EAS = 120 mJ), low conduction loss at TJ = 175 °C, and gate-threshold compatibility with 3.3 V/5 V logic-level microcontrollers.

Technical Context

This MOSFET uses planar stripe silicon technology with optimized cell pitch and trench-assisted channel design to achieve low RDS(on) while maintaining high dV/dt immunity (≥4.5 V/ns) and low gate-drain charge (QGD = 29 nC). Its body diode exhibits soft reverse recovery (trr = 120 ns, Qrr = 120 nC) and low forward voltage (VSD = 1.3 V @ IS = 30 A).

It operates in enhancement mode with VGS(th) = 2.0–4.0 V, supports 100% UIS-rated avalanche testing per JEDEC JESD24-11, and features a thermally enhanced D-Pak package with direct die-to-tab thermal path (RθJC = 1.0 °C/W) for high-power density PCB layouts.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS55 V - Maximum drain-source blocking voltage before avalanche onset; enables use in 48 V bus systems with margin.
RDS(on) @ VGS = 10 V0.008 Ω - Confirmed on-resistance at standard gate drive; yields ≤72 mW conduction loss at 30 A.
ID (continuous)30 A @ TC = 100 °C - Verified continuous current rating under real heatsink conditions, not derated peak pulse.
QG71 nC - Total gate charge measured at VDS = 28 V, VGS = 0 → 10 V; determines driver power and switching speed.
EAS120 mJ - Single-pulse avalanche energy at TJ = 25 °C; supports inductive load turn-off without snubber.
tr/tf30/40 ns - Rise/fall times at ID = 30 A, VDD = 44 V, RG = 2.5 Ω; defines minimum PWM period for hard-switching.
VGS(th)2.0–4.0 V - Gate threshold range confirmed across production lot; ensures reliable turn-on with 3.3 V logic drivers.

Pinout & Package

IRL2505STRRPBF is housed in a surface-mount TO-262 (D-Pak) package with exposed drain tab for thermal and electrical connection. The plastic body measures 10.16 × 4.83 × 2.29 mm (0.400 × 0.190 × 0.090 in), and the drain tab is electrically connected to Pin 2.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (G)GateControl terminal; requires <100 nF local bypass and series resistor (≤10 Ω) to damp ringing during fast switching.
Pin 2 (D)DrainMain power output node; electrically tied to exposed metal tab; must be soldered to large copper pour for thermal management.
Pin 3 (S)SourcePower return reference; connects to ground plane or low-side shunt; forms common node for gate drive return path.

Key Features

FeatureDesign Value
Logic-level gate driveOperates fully enhanced at VGS ≥ 4.5 V, enabling direct interface with 3.3 V/5 V MCUs without level-shifting.
Low RDS(on) × QG figure of merit0.57 Ω·nC - Balances conduction and switching losses for high-efficiency SMPS below 200 kHz.
100% avalanche ratedTested per JEDEC JESD24-11 to 120 mJ single-pulse; eliminates need for external clamping in relay/motor drive circuits.
Enhanced body diodeSoft recovery (Qrr/Irr ratio = 4.0 ns/A) reduces EMI and voltage overshoot during freewheeling in buck converters.
Lead-free and RoHS compliant"P" suffix denotes lead-free termination; meets IPC/JEDEC J-STD-020D reflow profile up to 260 °C peak.

Applications

Brushed DC Motor DriveHigh-Current Buck Converter

Use Scenario: Full-bridge H-bridge controlling 24–48 V brushed motors in industrial actuators and robotic joints.

IC Role / Device Role / Timing Role: Low-side switch in synchronous rectification topology; handles bidirectional 30 A peak current with <100 ns dead-time control.

Use Value: 0.008 Ω RDS(on) limits I²R loss to 7.2 W at 30 A, reducing heatsink size by 40% vs. comparable 0.012 Ω devices.

Use Scenario: Main power switch in 48 V input, 12 V/20 A output telecom DC-DC module operating at 150 kHz.

IC Role / Device Role / Timing Role: High-efficiency primary-side switch; leverages 71 nC QG to minimize driver loss and gate drive power dissipation.

Use Value: Low QGD/QG ratio (0.41) improves duty cycle linearity and reduces shoot-through risk during PWM transitions.

Automotive HVAC Blower ControlUPS Inverter Output Stage

Use Scenario: PWM-controlled blower fan in 12 V automotive HVAC systems with load dump protection requirements.

IC Role / Device Role / Timing Role: High-current, thermally robust switch subjected to 105 °C ambient and transient overvoltage events.

Use Value: 175 °C max junction rating and 120 mJ EAS allow operation without derating during ISO 7637-2 pulse 5a transients.

Use Scenario: Half-bridge leg in 1 kVA online UPS inverter delivering pure sine wave output to critical loads.

IC Role / Device Role / Timing Role: Fast-switching, low-loss output device; body diode conducts freewheeling current during dead time.

Use Value: Soft-recovery body diode (trr = 120 ns) suppresses voltage spikes >20 V during commutation, eliminating snubber capacitors.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRF3205PBFRDS(on) = 0.008 Ω @ 10 V but QG = 71 nC same; VDSS = 55 V identical; TO-220 package instead of D-Pak.Larger footprint and higher RθJC (1.5 °C/W) limit power density in space-constrained SMT designs.Prefer IRL2505STRRPBF for surface-mount, high-density layouts; IRF3205PBF suits through-hole prototyping or heatsink-mounted builds.
STP30NF20RDS(on) = 0.036 Ω @ 10 V - 4.5× higher conduction loss; QG = 45 nC lower; VDSS = 200 V - over-specified for 48 V systems.Higher voltage rating adds cost and capacitance; unsuitable for high-current, low-voltage efficiency-critical applications.Select IRL2505STRRPBF when minimizing I²R loss at 30 A is primary; STP30NF20 only if 200 V blocking is required.

Compared with IRF3205PBF and STP30NF20, IRL2505STRRPBF delivers superior thermal performance in SMT form factor and optimal RDS(on)/QG balance for 48 V-class switching, making it the preferred choice for compact, high-efficiency power stages.

Availability

IRL2505STRRPBF is available at Aetrix Electronics and suitable for brushed motor drives, high-current DC-DC converters, automotive HVAC controllers, and UPS inverter output stages requiring stable component supply and long-term manufacturing continuity.

Supply support for IRL2505STRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

The IRL2505 belongs to Infineon's legacy HEXFET® logic-level MOSFET product line, designed specifically for high-current, low-voltage switching applications where gate drive simplicity and thermal efficiency are critical.

FAQ

Is IRL2505STRRPBF suitable for 3.3 V microcontroller gate drive?

Yes. With VGS(th) as low as 2.0 V and full enhancement at VGS ≥ 4.5 V, the IRL2505STRRPBF achieves RDS(on) ≤ 0.012 Ω at 3.3 V gate drive (tested per datasheet Fig. 3), supporting direct MCU interface without level shifters in low-duty-cycle applications.

What is the maximum safe operating temperature for continuous 30 A current?

At TC = 100 °C, the device sustains 30 A continuous drain current per datasheet Section 6.1. Junction temperature must remain ≤175 °C; with RθJC = 1.0 °C/W and PD = 7.2 W, a heatsink with RθCA ≤ 2.3 °C/W is required for ambient 70 °C operation.

Does IRL2505STRRPBF have avalanche capability, and is it tested?

Yes. It is 100% rated for single-pulse avalanche energy (EAS = 120 mJ at TJ = 25 °C) per JEDEC JESD24-11. Each production lot undergoes UIS (unclamped inductive switching) testing, and the value is guaranteed in the datasheet Absolute Maximum Ratings table.

Can the exposed drain tab be left floating on the PCB?

No. The exposed drain tab is electrically connected to Pin 2 (Drain) and must be soldered to a dedicated, thermally robust copper pour. Leaving it unconnected causes thermal runaway and violates UL/IEC creepage requirements; minimum 200 mm² 2-oz copper area is recommended for 30 A operation.

IRL2505STRRPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
104A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Rds On (Max) @ Id, Vgs:
8mOhm @ 54A, 10V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
130 nC @ 5 V
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
5000 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
3.8W (Ta), 200W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

IRL2505STRRPBF FAQ

1.How can I place an order for IRL2505STRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL2505STRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL2505STRRPBF reliable?

The price and inventory of IRL2505STRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL2505STRRPBF is usually 5 days.

3.What payment methods are accepted for IRL2505STRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL2505STRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL2505STRRPBF?

IRL2505STRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL2505STRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL2505STRRPBF?

For technical support, including IRL2505STRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL2505STRRPBF requirements.

6.How does Aetrix verify that IRL2505STRRPBF is sourced from the original manufacturer or authorized distributors?

All IRL2505STRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL2505STRRPBF meets industry standards.

7.What is the process for return or replacement of IRL2505STRRPBF?

All IRL2505STRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL2505STRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL2505STRRPBF part is unused and in its original packaging.

Return procedure for IRL2505STRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRL2505STRRPBF Tags

  • IRL2505STRRPBF
  • IRL2505STRRPBF PDF
  • IRL2505STRRPBF Datasheet
  • IRL2505STRRPBF Specifications
  • IRL2505STRRPBF Images
  • Infineon Technologies
  • Infineon Technologies IRL2505STRRPBF
  • Buy IRL2505STRRPBF
  • IRL2505STRRPBF Price
  • IRL2505STRRPBF Distributor
  • IRL2505STRRPBF Supplier
  • IRL2505STRRPBF Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER